CN102138227A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102138227A
CN102138227A CN2009801334030A CN200980133403A CN102138227A CN 102138227 A CN102138227 A CN 102138227A CN 2009801334030 A CN2009801334030 A CN 2009801334030A CN 200980133403 A CN200980133403 A CN 200980133403A CN 102138227 A CN102138227 A CN 102138227A
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CN
China
Prior art keywords
layer
semiconductor device
quantum well
composition
aforementioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801334030A
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English (en)
Chinese (zh)
Inventor
名古肇
橘浩一
斋藤真司
原田佳幸
布上真也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
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Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN102138227A publication Critical patent/CN102138227A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Led Devices (AREA)
CN2009801334030A 2008-08-29 2009-08-31 半导体装置 Pending CN102138227A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008221471 2008-08-29
JP221471/2008 2008-08-29
PCT/JP2009/065195 WO2010024436A1 (ja) 2008-08-29 2009-08-31 半導体装置

Publications (1)

Publication Number Publication Date
CN102138227A true CN102138227A (zh) 2011-07-27

Family

ID=41721595

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801334030A Pending CN102138227A (zh) 2008-08-29 2009-08-31 半导体装置

Country Status (6)

Country Link
US (1) US20100187497A1 (enExample)
EP (1) EP2325899A4 (enExample)
JP (2) JP2010080955A (enExample)
KR (1) KR20110034689A (enExample)
CN (1) CN102138227A (enExample)
WO (1) WO2010024436A1 (enExample)

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CN107207960A (zh) * 2015-02-02 2017-09-26 斯坦雷电气株式会社 量子点的制造方法和量子点

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JP4940317B2 (ja) * 2010-02-25 2012-05-30 株式会社東芝 半導体発光素子及びその製造方法
JP5325171B2 (ja) * 2010-07-08 2013-10-23 株式会社東芝 半導体発光素子
US9142413B2 (en) * 2010-11-08 2015-09-22 Georgia Tech Research Corporation Methods for growing a non-phase separated group-III nitride semiconductor alloy
US20130082274A1 (en) * 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
KR101262726B1 (ko) * 2011-12-30 2013-05-09 일진엘이디(주) 탄소 도핑된 ｐ형 질화물층을 포함하는 질화물계 발광소자 제조 방법
EP2820678B1 (en) * 2012-02-28 2019-05-08 Lumileds Holding B.V. Integration of gallium nitride leds with aluminum gallium nitride/gallium nitride devices on silicon substrates for ac leds
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
TWI648872B (zh) 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
FR3003397B1 (fr) * 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
JP2016517627A (ja) * 2013-03-15 2016-06-16 ソイテックＳｏｉｔｅｃ ＩｎＧａＮを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス
JP5606595B2 (ja) * 2013-06-28 2014-10-15 株式会社東芝 半導体発光素子の製造方法
FR3012676A1 (fr) 2013-10-25 2015-05-01 Commissariat Energie Atomique Diode electroluminescente a puits quantiques separes par des couches barrieres d'ingan a compositions d'indium variables
JP6281469B2 (ja) * 2014-11-03 2018-02-21 豊田合成株式会社 発光素子の製造方法
US9985168B1 (en) 2014-11-18 2018-05-29 Cree, Inc. Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
JP6764230B2 (ja) * 2015-02-06 2020-09-30 スタンレー電気株式会社 半導体ナノ粒子の製造方法
JP6764231B2 (ja) * 2015-02-06 2020-09-30 スタンレー電気株式会社 半導体ナノ粒子の製造方法、および、半導体ナノ粒子
JP6128138B2 (ja) * 2015-02-10 2017-05-17 ウシオ電機株式会社 半導体発光素子
DE102016116425A1 (de) 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US11393948B2 (en) 2018-08-31 2022-07-19 Creeled, Inc. Group III nitride LED structures with improved electrical performance
JP6891865B2 (ja) 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
WO2021226121A1 (en) 2020-05-04 2021-11-11 Raxium, Inc. Light emitting diodes with aluminum-containing layers integrated therein and associated methods
US11631786B2 (en) * 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
CN115458649B (zh) * 2022-10-21 2025-05-02 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Citations (2)

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JPH1084132A (ja) * 1996-09-08 1998-03-31 Toyoda Gosei Co Ltd 半導体発光素子
JPH10270756A (ja) * 1997-03-27 1998-10-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置

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JP3519990B2 (ja) * 1998-12-09 2004-04-19 三洋電機株式会社 発光素子及びその製造方法
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
JP4724901B2 (ja) 2000-07-21 2011-07-13 パナソニック株式会社 窒化物半導体の製造方法
JP4161603B2 (ja) * 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
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JP4389723B2 (ja) * 2004-02-17 2009-12-24 住友電気工業株式会社 半導体素子を形成する方法
CN100349306C (zh) * 2004-08-27 2007-11-14 中国科学院半导体研究所 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法
JP2007088270A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP2007214221A (ja) * 2006-02-08 2007-08-23 Sharp Corp 窒化物半導体レーザ素子
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Patent Citations (2)

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JPH1084132A (ja) * 1996-09-08 1998-03-31 Toyoda Gosei Co Ltd 半導体発光素子
JPH10270756A (ja) * 1997-03-27 1998-10-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107207960A (zh) * 2015-02-02 2017-09-26 斯坦雷电气株式会社 量子点的制造方法和量子点
CN107207960B (zh) * 2015-02-02 2021-05-25 斯坦雷电气株式会社 量子点的制造方法和量子点

Also Published As

Publication number Publication date
EP2325899A4 (en) 2015-04-29
EP2325899A1 (en) 2011-05-25
US20100187497A1 (en) 2010-07-29
JP2010080955A (ja) 2010-04-08
KR20110034689A (ko) 2011-04-05
JP5634368B2 (ja) 2014-12-03
WO2010024436A1 (ja) 2010-03-04
JP2011258994A (ja) 2011-12-22

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Application publication date: 20110727