KR20110034689A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20110034689A
KR20110034689A KR1020117004435A KR20117004435A KR20110034689A KR 20110034689 A KR20110034689 A KR 20110034689A KR 1020117004435 A KR1020117004435 A KR 1020117004435A KR 20117004435 A KR20117004435 A KR 20117004435A KR 20110034689 A KR20110034689 A KR 20110034689A
Authority
KR
South Korea
Prior art keywords
layer
quantum well
light emitting
composition
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117004435A
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English (en)
Korean (ko)
Inventor
하지메 나고
고이찌 다찌바나
신지 사이또
요시유끼 하라다
신야 누노우에
Original Assignee
가부시끼가이샤 도시바
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Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20110034689A publication Critical patent/KR20110034689A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Led Devices (AREA)
KR1020117004435A 2008-08-29 2009-08-31 반도체 장치 Ceased KR20110034689A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-221471 2008-08-29
JP2008221471 2008-08-29

Publications (1)

Publication Number Publication Date
KR20110034689A true KR20110034689A (ko) 2011-04-05

Family

ID=41721595

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117004435A Ceased KR20110034689A (ko) 2008-08-29 2009-08-31 반도체 장치

Country Status (6)

Country Link
US (1) US20100187497A1 (enExample)
EP (1) EP2325899A4 (enExample)
JP (2) JP2010080955A (enExample)
KR (1) KR20110034689A (enExample)
CN (1) CN102138227A (enExample)
WO (1) WO2010024436A1 (enExample)

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WO2011027417A1 (ja) 2009-09-01 2011-03-10 株式会社 東芝 半導体発光素子
JP4940317B2 (ja) * 2010-02-25 2012-05-30 株式会社東芝 半導体発光素子及びその製造方法
JP5325171B2 (ja) * 2010-07-08 2013-10-23 株式会社東芝 半導体発光素子
US9142413B2 (en) * 2010-11-08 2015-09-22 Georgia Tech Research Corporation Methods for growing a non-phase separated group-III nitride semiconductor alloy
US20130082274A1 (en) * 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
KR101262726B1 (ko) * 2011-12-30 2013-05-09 일진엘이디(주) 탄소 도핑된 ｐ형 질화물층을 포함하는 질화물계 발광소자 제조 방법
EP2820678B1 (en) * 2012-02-28 2019-05-08 Lumileds Holding B.V. Integration of gallium nitride leds with aluminum gallium nitride/gallium nitride devices on silicon substrates for ac leds
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
TWI648872B (zh) 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
FR3003397B1 (fr) * 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
JP2016517627A (ja) * 2013-03-15 2016-06-16 ソイテックＳｏｉｔｅｃ ＩｎＧａＮを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス
JP5606595B2 (ja) * 2013-06-28 2014-10-15 株式会社東芝 半導体発光素子の製造方法
FR3012676A1 (fr) 2013-10-25 2015-05-01 Commissariat Energie Atomique Diode electroluminescente a puits quantiques separes par des couches barrieres d'ingan a compositions d'indium variables
JP6281469B2 (ja) * 2014-11-03 2018-02-21 豊田合成株式会社 発光素子の製造方法
US9985168B1 (en) 2014-11-18 2018-05-29 Cree, Inc. Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
WO2016125435A1 (ja) * 2015-02-02 2016-08-11 スタンレー電気株式会社 量子ドットの製造方法および量子ドット
JP6764230B2 (ja) * 2015-02-06 2020-09-30 スタンレー電気株式会社 半導体ナノ粒子の製造方法
JP6764231B2 (ja) * 2015-02-06 2020-09-30 スタンレー電気株式会社 半導体ナノ粒子の製造方法、および、半導体ナノ粒子
JP6128138B2 (ja) * 2015-02-10 2017-05-17 ウシオ電機株式会社 半導体発光素子
DE102016116425A1 (de) 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US11393948B2 (en) 2018-08-31 2022-07-19 Creeled, Inc. Group III nitride LED structures with improved electrical performance
JP6891865B2 (ja) 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
WO2021226121A1 (en) 2020-05-04 2021-11-11 Raxium, Inc. Light emitting diodes with aluminum-containing layers integrated therein and associated methods
US11631786B2 (en) * 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
CN115458649B (zh) * 2022-10-21 2025-05-02 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JPH1065271A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 窒化ガリウム系半導体光発光素子
JP3304782B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子
JPH10270756A (ja) * 1997-03-27 1998-10-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
JP3519990B2 (ja) * 1998-12-09 2004-04-19 三洋電機株式会社 発光素子及びその製造方法
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
JP4724901B2 (ja) 2000-07-21 2011-07-13 パナソニック株式会社 窒化物半導体の製造方法
JP4161603B2 (ja) * 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
MY129352A (en) * 2001-03-28 2007-03-30 Nichia Corp Nitride semiconductor device
EP1536486A4 (en) * 2002-07-16 2006-11-08 Nitride Semiconductors Co Ltd COMPOSITE SEMICONDUCTOR ELEMENT ON GALLIUM NITRID BASE
JP2004200347A (ja) * 2002-12-18 2004-07-15 Sumitomo Electric Ind Ltd 高放熱性能を持つ発光ダイオード
US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
JP4412918B2 (ja) * 2003-05-28 2010-02-10 シャープ株式会社 窒化物半導体発光素子及びその製造方法
JP2004015072A (ja) * 2003-09-26 2004-01-15 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP4389723B2 (ja) * 2004-02-17 2009-12-24 住友電気工業株式会社 半導体素子を形成する方法
CN100349306C (zh) * 2004-08-27 2007-11-14 中国科学院半导体研究所 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法
JP2007088270A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP2007214221A (ja) * 2006-02-08 2007-08-23 Sharp Corp 窒化物半導体レーザ素子
KR100753518B1 (ko) * 2006-05-23 2007-08-31 엘지전자 주식회사 질화물계 발광 소자

Also Published As

Publication number Publication date
EP2325899A4 (en) 2015-04-29
EP2325899A1 (en) 2011-05-25
US20100187497A1 (en) 2010-07-29
JP2010080955A (ja) 2010-04-08
CN102138227A (zh) 2011-07-27
JP5634368B2 (ja) 2014-12-03
WO2010024436A1 (ja) 2010-03-04
JP2011258994A (ja) 2011-12-22

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