JP6764231B2 - 半導体ナノ粒子の製造方法、および、半導体ナノ粒子 - Google Patents
半導体ナノ粒子の製造方法、および、半導体ナノ粒子 Download PDFInfo
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- JP6764231B2 JP6764231B2 JP2016006061A JP2016006061A JP6764231B2 JP 6764231 B2 JP6764231 B2 JP 6764231B2 JP 2016006061 A JP2016006061 A JP 2016006061A JP 2016006061 A JP2016006061 A JP 2016006061A JP 6764231 B2 JP6764231 B2 JP 6764231B2
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 239000002105 nanoparticle Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000002245 particle Substances 0.000 claims description 100
- 239000013078 crystal Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 22
- 239000002904 solvent Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 130
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 24
- 239000000243 solution Substances 0.000 description 20
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
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- 239000007810 chemical reaction solvent Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- RLECCBFNWDXKPK-UHFFFAOYSA-N bis(trimethylsilyl)sulfide Chemical compound C[Si](C)(C)S[Si](C)(C)C RLECCBFNWDXKPK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- ODZPKZBBUMBTMG-UHFFFAOYSA-N sodium amide Chemical compound [NH2-].[Na+] ODZPKZBBUMBTMG-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000004729 solvothermal method Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Description
Claims (9)
- 工程a)溶媒中に、所定の結晶面が露出するシード粒子を分散させる工程と、
工程b)溶媒中において、前記シード粒子の結晶面に、平板状の第1の半導体層、該シード粒子と同じ部材により構成される平板状のシード層、および平板状の第2の半導体層、を順次エピタキシャル成長する工程と、
工程c)前記シード粒子および前記シード層をエッチング処理により除去して、前記第1および第2の半導体層を相互に分離する工程と、
を有する半導体ナノ粒子の製造方法。 - 前記第1および第2の半導体層の面内方向における最大幅は、20nm以下である請求項1記載の半導体ナノ粒子の製造方法。
- 前記シード粒子および前記シード層は、ZnOSを含み、
前記第1および第2の半導体層各々は、窒化物半導体を含む、請求項1または2記載の半導体ナノ粒子の製造方法。 - 前記第1および第2の半導体層各々は、InGaNを含む請求項3記載の半導体ナノ粒子の製造方法。
- 前記第1および第2の半導体層各々は、さらにInAlNを含む請求項4記載の半導体ナノ粒子の製造方法。
- 前記工程a)において、選択的光エッチング処理により、前記シード粒子の所定の結晶面を露出する請求項1〜5いずれか1項記載の半導体ナノ粒子の製造方法。
- さらに、工程d)溶媒中において、相互に分離した前記第1および第2の半導体層各々を、第3の半導体層により被覆する工程と、を有する請求項1〜6いずれか1項記載の半導体ナノ粒子の製造方法。
- 前記第3の半導体層は、InAlNを含む請求項7記載の半導体ナノ粒子の製造方法。
- ZnOSを含むシード粒子であって、粒径が20nm以下であり、所定の結晶面が露出するシード粒子と、
前記シード粒子の結晶面上にエピタキシャル成長した、窒化物半導体を含む平板状の第1の半導体層と、
前記第1の半導体層上にエピタキシャル成長した、前記シード粒子と同じ部材により構成される平板状のシード層と、
前記シード層上にエピタキシャル成長した、窒化物半導体を含む平板状の第2の半導体層と、
を含む半導体ナノ粒子。
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JP3837485B2 (ja) * | 2001-09-27 | 2006-10-25 | 独立行政法人産業技術総合研究所 | 励起子を用いた量子論理素子 |
US20070037365A1 (en) * | 2005-08-15 | 2007-02-15 | Ranganath Tirumala R | Semiconductor nanostructures and fabricating the same |
JP2010080955A (ja) * | 2008-08-29 | 2010-04-08 | Toshiba Corp | 半導体装置 |
JP2013239690A (ja) * | 2012-04-16 | 2013-11-28 | Sharp Corp | 超格子構造、前記超格子構造を備えた半導体装置および半導体発光装置、ならびに前記超格子構造の製造方法 |
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