JP2016135863A - コアシェル構造を有する量子ドットとその製造方法 - Google Patents
コアシェル構造を有する量子ドットとその製造方法 Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 69
- 239000011258 core-shell material Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- HCUOEKSZWPGJIM-YBRHCDHNSA-N (e,2e)-2-hydroxyimino-6-methoxy-4-methyl-5-nitrohex-3-enamide Chemical compound COCC([N+]([O-])=O)\C(C)=C\C(=N/O)\C(N)=O HCUOEKSZWPGJIM-YBRHCDHNSA-N 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 61
- 239000013078 crystal Substances 0.000 claims description 37
- 230000005284 excitation Effects 0.000 claims description 10
- 238000003786 synthesis reaction Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000012295 chemical reaction liquid Substances 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims 3
- 239000003086 colorant Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 142
- 239000002105 nanoparticle Substances 0.000 description 50
- 239000000203 mixture Substances 0.000 description 24
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- 239000002243 precursor Substances 0.000 description 21
- 239000002904 solvent Substances 0.000 description 20
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 18
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 15
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 14
- RLECCBFNWDXKPK-UHFFFAOYSA-N bis(trimethylsilyl)sulfide Chemical compound C[Si](C)(C)S[Si](C)(C)C RLECCBFNWDXKPK-UHFFFAOYSA-N 0.000 description 12
- 239000007810 chemical reaction solvent Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 230000005587 bubbling Effects 0.000 description 11
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000005119 centrifugation Methods 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 7
- 239000003130 blood coagulation factor inhibitor Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000746 purification Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 6
- 230000002776 aggregation Effects 0.000 description 6
- 238000004220 aggregation Methods 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- ODZPKZBBUMBTMG-UHFFFAOYSA-N sodium amide Chemical compound [NH2-].[Na+] ODZPKZBBUMBTMG-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 description 4
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- XIVNZHXRIPJOIZ-UHFFFAOYSA-N octadecanoic acid;zinc Chemical compound [Zn].CCCCCCCCCCCCCCCCCC(O)=O XIVNZHXRIPJOIZ-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004729 solvothermal method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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Abstract
高効率で高信頼性のコアシェル構造を有する量子ドットを提供する。
【解決手段】
量子ドットは、ZnOzS1−zで形成されたコアと、コアを包み、AlxGayIn1−x−yNで形成された少なくとも1つのシェルとを含み、x、y、zの少なくとも1つはゼロでも1でもない、コアシェル構造を有する。
【選択図】 図4
Description
CdSe,CdS,InP,GaP等のコアをZnS,ZnSe等のシェル層で覆ったコアシェル構造の量子ドットが提案されている(例えば特許文献1)。また、III−V族半導体(InGaN)のコアをII−VI族半導体(ZnO,ZnS,ZnSe,ZnTe等)のシェルで覆う構造が提案されている(例えば特許文献2)。
光効率や信頼性を低下させる原因となるであろう。
12、22,32,42,52 第1シェル層、
23,33,43,53 第2シェル層、 24,44,54 第3シェル層、
45,55 第4シェル層、 56 第5シェル層、 15 フラスコ、
16 ポート、 17 シリンジ、 18 温度測定部、 19 ヒータ、
27 励起光源、 28 検出器。
図3Aは、第1実施例によるコアシェル構造を有する量子ドットを概略的に示す断面図である。ZnOで形成されたコア11を、Al0.70In0.30Nで形成されたシェル12が包んでいる。図1に示されるように、ZnOのa軸方向の格子定数は0.324nmであり、Al0.70In0.30Nのa軸方向の格子定数も0.324nmであり、格子整合する。例えば、コア11の半径rは2.0nmであり、シェル12の厚さdは3.0nmである。量子効果により、ZnOコア11のバンドギャップエネルギーは3.6eVとなり、Al0.70In0.30Nシェル12のバンドギャップエネルギーは4.6eVとなる。
以下、実施例1による量子ドットの製造プロセスを説明する。
図4Aは、ZnO0.72S0.28で形成されたコア21の上に、Al0.33In0.67Nの第1シェル層22、Ga0.40In0.60Nの第2シェル層23,Al0.33In0.67Nの第3シェル層24を積層した第2実施例によるコアシェル構造を有する量子ドットを概略的に示す断面図である。
図4Cに示すように、300mlの石英製フラスコ15を反応容器として準備する。フラスコ15は、取出し口の他、不活性ガスで置換できるポート16、反応前駆体を注入できるシリンジ17を備える複数の専用ポート、熱電対を取り付けた温度測定部18を備える。不活性ガスとしてはアルゴン(Ar)を用いる。フラスコ15はマントルヒータ19上に設置する。
図5Aは、ZnO0.50S0.50コア31上に、InN第1シェル層32、ZnO0.50S0.50第2シェル層33を積層した、第3実施例によるコア/シェル構造を有する量子ドットを示す断面図である。ZnO0.50S0.50と、InNとは、格子定数0.355nmで格子整合する。例えば、ZnO0.50S0.50コア31の半径rは1.4nm、InN第1シェル層32の厚さd1は2.0nm、ZnO0.50S0.50第2シェル層33の厚さd2は1.6nmであるとする。
図6Aは、第3実施例による量子ドットの上にさらに2層のシェルを形成した、第4実施例による量子ドットを概略的に示す断面図である。ZnO0.50S0.50コア41を、InN第1シェル層42、ZnO0.50S0.50第2シェル層43、InN第3シェル層44、ZnO0.50S0.50第4シェル層45、が取り囲んで、量子ドットを構成している。第3実施例のZnO0.50S0.50第2シェル層の上にさらにInN第3シェル層、ZnO0.50S0.50第4シェル層を積層して、発光機構をマルチスタック化した構成とも言えよう。発光機構をマルチスタック化することで発光強度を増加することができる。コア41、及び第1、第2、第3、第4シェル層42−45は、格子定数0.355nmで格子整合する。
図7Aは、第2実施例による量子ドットの上にさらに2層のシェルを形成した、第5実施例による量子ドットを概略的に示す断面図である。ZnO0.72S0.28で形成されるコア51の上に、Al0.33In0.67Nの第1シェル層52、Ga0.40In0.60Nの第2シェル層53,Al0.33In0.67Nの第3シェル層54、Ga0.40In0.60Nの第4シェル層55,Al0.33In0.67Nの第5シェル層56を積層したコアシェル構造を有する量子ドットである。
Claims (14)
- ZnOzS1−zで形成されたコアと、コアを包み、AlxGayIn1−x−yNで形成された少なくとも1つのシェルとを含み、x、y、zの少なくとも1つはゼロでも1でもない、コアシェル構造を有する量子ドット。
- 前記少なくとも1つのシェルが前記コアの外側に形成された1つのAlxIn1−xNシェルであり、x、zの少なくとも1つはゼロでも1でもない、請求項1に記載のコアシェル構造を有する量子ドット。
- 前記コアがZnOで形成され、前記1つのシェルがAlInN混晶で形成された請求項2に記載のコアシェル構造を有する量子ドット。
- 前記コアがZnOS混晶で形成され、前記1つのシェルがInNで形成された請求項2に記載のコアシェル構造を有する量子ドット。
- 前記少なくとも1つのシェルが、前記コアの外側を包む第1シェルと、その外側を包む第2シェルとを含み、前記第1シェルがAlxGayIn1−x−yNで形成され、前記コアと前記第2シェルがZnOzS1−zで形成された、請求項1に記載のコアシェル構造を有する量子ドット。
- 前記第1シェルがInNで形成され、前記コアと前記第2シェルがZnO0.5S0.5で形成された、請求項5に記載のコアシェル構造を有する量子ドット。
- 前記少なくとも1つのシェルが、前記コアの外側を包む第1シェルと、その外側を包む第2シェルと、さらにその外側を包む第3シェルとを含み、前記第1、第2、第3シェルがAlxGayIn1−x−yNで形成され、前記第1シェルと前記第3シェルとが前記第2シェルよりバンドギャップが広い、請求項1に記載のコアシェル構造を有する量子ドット。
- 前記第2シェルがGayIn1−yN混晶で形成され、前記第1、第3シェルがAlxIn1−xN混晶で形成された、請求項7に記載のコアシェル構造を有する量子ドット。
- 前記第3シェルを包み、GayIn1−yN混晶で形成された第4シェルと、前記第4シェルを包み、AlxIn1−xN混晶で形成された第5シェルと、をさらに含む、請求項8に記載のコアシェル構造を有する量子ドット。
- 前記第2、第4シェルが、異なる色の蛍光を発生する請求項9に記載のコアシェル構造を有する量子ドット。
- 前記第2、第4シェルが、同じ色の蛍光を発生する請求項9に記載のコアシェル構造を有する量子ドット。
- 液相合成によりZnOzS1−zで形成されたコアを形成し、
液相成長により前記コアの上にAlxGayIn1−x−yNで形成された第1シェルを形成する、
x、y、zの少なくとも1つはゼロでも1でもない、コアシェル構造を有する量子ドットの製造方法。 - 前記第1シェルの上に、液相成長によりAlxGayIn1−x−yNまたはZnOzS1−zで形成されたシェルをさらに形成し、複数のシェルを形成する、請求項12に記載のコアシェル構造を有する量子ドットの製造方法。
- 前記コア及び複数のシェルが、複数の発光機構を含み、
量子ドットを含む反応液に励起光を照射し、発生する蛍光を測定して反応を制御する、請求項13に記載のコアシェル構造を有する量子ドットの製造方法。
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