CN102103326B - 光学元件制造方法 - Google Patents

光学元件制造方法 Download PDF

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Publication number
CN102103326B
CN102103326B CN201010167630XA CN201010167630A CN102103326B CN 102103326 B CN102103326 B CN 102103326B CN 201010167630X A CN201010167630X A CN 201010167630XA CN 201010167630 A CN201010167630 A CN 201010167630A CN 102103326 B CN102103326 B CN 102103326B
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China
Prior art keywords
phase shift
optical element
pattern
shift section
section
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CN201010167630XA
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English (en)
Chinese (zh)
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CN102103326A (zh
Inventor
山城一秀
须田秀喜
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Hoya Corp
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Hoya Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201010167630XA 2009-12-21 2010-04-26 光学元件制造方法 Active CN102103326B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009289010A JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子
JP2009-289010 2009-12-21

Publications (2)

Publication Number Publication Date
CN102103326A CN102103326A (zh) 2011-06-22
CN102103326B true CN102103326B (zh) 2013-01-23

Family

ID=44151602

Family Applications (1)

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CN201010167630XA Active CN102103326B (zh) 2009-12-21 2010-04-26 光学元件制造方法

Country Status (5)

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US (1) US8273506B2 (enExample)
JP (1) JP5479074B2 (enExample)
KR (2) KR101159959B1 (enExample)
CN (1) CN102103326B (enExample)
TW (1) TWI467320B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432603B2 (en) 2009-03-31 2013-04-30 View, Inc. Electrochromic devices
US9958750B2 (en) 2010-11-08 2018-05-01 View, Inc. Electrochromic window fabrication methods
US12403676B2 (en) 2011-12-12 2025-09-02 View Operating Corporation Thin-film devices and fabrication
US12061402B2 (en) 2011-12-12 2024-08-13 View, Inc. Narrow pre-deposition laser deletion
US11865632B2 (en) 2011-12-12 2024-01-09 View, Inc. Thin-film devices and fabrication
US10295880B2 (en) 2011-12-12 2019-05-21 View, Inc. Narrow pre-deposition laser deletion
CN104011588B (zh) 2011-12-12 2021-06-22 唯景公司 薄膜装置和制造
US10802371B2 (en) 2011-12-12 2020-10-13 View, Inc. Thin-film devices and fabrication
CN109298592A (zh) * 2012-02-15 2019-02-01 大日本印刷株式会社 相移掩模及使用该相移掩模的抗蚀图案形成方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
TWI689771B (zh) * 2014-07-03 2020-04-01 美商唯景公司 雷射圖案化電致變色裝置
US12235560B2 (en) 2014-11-25 2025-02-25 View, Inc. Faster switching electrochromic devices
CA2980477A1 (en) 2015-03-20 2016-09-29 View, Inc. Faster switching low-defect electrochromic windows
JP2017072842A (ja) * 2016-11-09 2017-04-13 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
US12078921B2 (en) 2020-11-20 2024-09-03 Entegris, Inc. Phase-shift reticle for use in photolithography
CN113589641B (zh) * 2021-07-20 2024-03-19 华虹半导体(无锡)有限公司 相移掩模的制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038445A (zh) * 2006-03-16 2007-09-19 Hoya株式会社 图案形成方法以及灰阶掩模的制造方法
CN101359168A (zh) * 2007-07-30 2009-02-04 Hoya株式会社 灰色调掩模的制造方法以及灰色调掩模
CN101373323A (zh) * 2007-08-22 2009-02-25 Hoya株式会社 光掩模和光掩模的制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100322537B1 (ko) * 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
JP2003121988A (ja) * 2001-10-12 2003-04-23 Hoya Corp ハーフトーン型位相シフトマスクの欠陥修正方法
JP3727319B2 (ja) 2002-04-30 2005-12-14 松下電器産業株式会社 フォトマスク及びその作成方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP2003330159A (ja) 2002-05-09 2003-11-19 Nec Electronics Corp 透過型位相シフトマスク及び該透過型位相シフトマスクを用いたパターン形成方法
JP4443873B2 (ja) 2003-08-15 2010-03-31 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
TWI243280B (en) * 2004-05-19 2005-11-11 Prodisc Technology Inc Optical device manufacturing method
JP4566666B2 (ja) * 2004-09-14 2010-10-20 富士通セミコンダクター株式会社 露光用マスクとその製造方法
JP4823711B2 (ja) * 2006-02-16 2011-11-24 Ｈｏｙａ株式会社 パターン形成方法及び位相シフトマスクの製造方法
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
KR20090044534A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 노광 마스크, 노광 마스크 제조 방법 및 이를 이용한반도체 소자의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038445A (zh) * 2006-03-16 2007-09-19 Hoya株式会社 图案形成方法以及灰阶掩模的制造方法
CN101359168A (zh) * 2007-07-30 2009-02-04 Hoya株式会社 灰色调掩模的制造方法以及灰色调掩模
CN101373323A (zh) * 2007-08-22 2009-02-25 Hoya株式会社 光掩模和光掩模的制造方法

Also Published As

Publication number Publication date
KR20120054584A (ko) 2012-05-30
CN102103326A (zh) 2011-06-22
KR101297517B1 (ko) 2013-08-16
TW201122720A (en) 2011-07-01
KR20110073184A (ko) 2011-06-29
JP2011128504A (ja) 2011-06-30
US8273506B2 (en) 2012-09-25
JP5479074B2 (ja) 2014-04-23
TWI467320B (zh) 2015-01-01
KR101159959B1 (ko) 2012-06-25
US20110151383A1 (en) 2011-06-23

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PB01 Publication
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CP02 Change in the address of a patent holder

Address after: Japan Tokyo 160-8347 Shinjuku Shinjuku six chome 10 No. 1

Patentee after: HOYA Corporation

Address before: Tokyo, Japan, Japan

Patentee before: HOYA Corporation