JP5479074B2 - 光学素子の製造方法、光学素子 - Google Patents

光学素子の製造方法、光学素子 Download PDF

Info

Publication number
JP5479074B2
JP5479074B2 JP2009289010A JP2009289010A JP5479074B2 JP 5479074 B2 JP5479074 B2 JP 5479074B2 JP 2009289010 A JP2009289010 A JP 2009289010A JP 2009289010 A JP2009289010 A JP 2009289010A JP 5479074 B2 JP5479074 B2 JP 5479074B2
Authority
JP
Japan
Prior art keywords
phase shifter
light
optical element
substrate
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009289010A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011128504A5 (enExample
JP2011128504A (ja
Inventor
一秀 山城
秀喜 須田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2009289010A priority Critical patent/JP5479074B2/ja
Priority to US12/718,655 priority patent/US8273506B2/en
Priority to TW99111677A priority patent/TWI467320B/zh
Priority to KR1020100037430A priority patent/KR101159959B1/ko
Priority to CN201010167630XA priority patent/CN102103326B/zh
Publication of JP2011128504A publication Critical patent/JP2011128504A/ja
Priority to KR1020120049848A priority patent/KR101297517B1/ko
Publication of JP2011128504A5 publication Critical patent/JP2011128504A5/ja
Application granted granted Critical
Publication of JP5479074B2 publication Critical patent/JP5479074B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2009289010A 2009-12-21 2009-12-21 光学素子の製造方法、光学素子 Active JP5479074B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009289010A JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子
US12/718,655 US8273506B2 (en) 2009-12-21 2010-03-05 Method of manufacturing optical element, and optical element
TW99111677A TWI467320B (zh) 2009-12-21 2010-04-14 光學元件之製造方法、光學元件
KR1020100037430A KR101159959B1 (ko) 2009-12-21 2010-04-22 광학 소자의 제조 방법, 광학 소자
CN201010167630XA CN102103326B (zh) 2009-12-21 2010-04-26 光学元件制造方法
KR1020120049848A KR101297517B1 (ko) 2009-12-21 2012-05-10 광학 소자의 제조 방법, 광학 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009289010A JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014024253A Division JP5719948B2 (ja) 2014-02-12 2014-02-12 光学素子の製造方法

Publications (3)

Publication Number Publication Date
JP2011128504A JP2011128504A (ja) 2011-06-30
JP2011128504A5 JP2011128504A5 (enExample) 2012-07-12
JP5479074B2 true JP5479074B2 (ja) 2014-04-23

Family

ID=44151602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009289010A Active JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子

Country Status (5)

Country Link
US (1) US8273506B2 (enExample)
JP (1) JP5479074B2 (enExample)
KR (2) KR101159959B1 (enExample)
CN (1) CN102103326B (enExample)
TW (1) TWI467320B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432603B2 (en) 2009-03-31 2013-04-30 View, Inc. Electrochromic devices
US9958750B2 (en) 2010-11-08 2018-05-01 View, Inc. Electrochromic window fabrication methods
US12403676B2 (en) 2011-12-12 2025-09-02 View Operating Corporation Thin-film devices and fabrication
US12061402B2 (en) 2011-12-12 2024-08-13 View, Inc. Narrow pre-deposition laser deletion
US11865632B2 (en) 2011-12-12 2024-01-09 View, Inc. Thin-film devices and fabrication
US10295880B2 (en) 2011-12-12 2019-05-21 View, Inc. Narrow pre-deposition laser deletion
CN104011588B (zh) 2011-12-12 2021-06-22 唯景公司 薄膜装置和制造
US10802371B2 (en) 2011-12-12 2020-10-13 View, Inc. Thin-film devices and fabrication
CN109298592A (zh) * 2012-02-15 2019-02-01 大日本印刷株式会社 相移掩模及使用该相移掩模的抗蚀图案形成方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
TWI689771B (zh) * 2014-07-03 2020-04-01 美商唯景公司 雷射圖案化電致變色裝置
US12235560B2 (en) 2014-11-25 2025-02-25 View, Inc. Faster switching electrochromic devices
CA2980477A1 (en) 2015-03-20 2016-09-29 View, Inc. Faster switching low-defect electrochromic windows
JP2017072842A (ja) * 2016-11-09 2017-04-13 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
US12078921B2 (en) 2020-11-20 2024-09-03 Entegris, Inc. Phase-shift reticle for use in photolithography
CN113589641B (zh) * 2021-07-20 2024-03-19 华虹半导体(无锡)有限公司 相移掩模的制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100322537B1 (ko) * 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
JP2003121988A (ja) * 2001-10-12 2003-04-23 Hoya Corp ハーフトーン型位相シフトマスクの欠陥修正方法
JP3727319B2 (ja) 2002-04-30 2005-12-14 松下電器産業株式会社 フォトマスク及びその作成方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP2003330159A (ja) 2002-05-09 2003-11-19 Nec Electronics Corp 透過型位相シフトマスク及び該透過型位相シフトマスクを用いたパターン形成方法
JP4443873B2 (ja) 2003-08-15 2010-03-31 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
TWI243280B (en) * 2004-05-19 2005-11-11 Prodisc Technology Inc Optical device manufacturing method
JP4566666B2 (ja) * 2004-09-14 2010-10-20 富士通セミコンダクター株式会社 露光用マスクとその製造方法
JP4823711B2 (ja) * 2006-02-16 2011-11-24 Ｈｏｙａ株式会社 パターン形成方法及び位相シフトマスクの製造方法
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
TW200736821A (en) * 2006-03-16 2007-10-01 Hoya Corp Pattern forming method and method of producing a gray tone mask
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP5254581B2 (ja) * 2007-08-22 2013-08-07 Ｈｏｙａ株式会社 フォトマスク及びフォトマスクの製造方法
KR20090044534A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 노광 마스크, 노광 마스크 제조 방법 및 이를 이용한반도체 소자의 제조 방법

Also Published As

Publication number Publication date
KR20120054584A (ko) 2012-05-30
CN102103326A (zh) 2011-06-22
KR101297517B1 (ko) 2013-08-16
TW201122720A (en) 2011-07-01
KR20110073184A (ko) 2011-06-29
JP2011128504A (ja) 2011-06-30
US8273506B2 (en) 2012-09-25
CN102103326B (zh) 2013-01-23
TWI467320B (zh) 2015-01-01
KR101159959B1 (ko) 2012-06-25
US20110151383A1 (en) 2011-06-23

Similar Documents

Publication Publication Date Title
JP5479074B2 (ja) 光学素子の製造方法、光学素子
KR100201040B1 (ko) 위상 쉬프트 마스크 및 그 제조 방법
CN110824828B (zh) 光掩模和显示装置的制造方法
JP3417798B2 (ja) 露光用マスク
CN105911812B (zh) 光掩模组及其制造方法、光掩模及显示装置的制造方法
KR20110110010A (ko) 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 다계조 포토마스크용 블랭크 및 패턴 전사 방법
JP6259509B1 (ja) ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
US20100323280A1 (en) Mask for EUV Lithography and Method for Exposure Using the Same
JP2018180507A (ja) フォトマスク及びフォトマスクブランクス並びにフォトマスクの製造方法
US20070243491A1 (en) Method of making a semiconductor with a high transmission CVD silicon nitride phase shift mask
KR20230068330A (ko) 포토 마스크 블랭크의 제조 방법 및 포토 마스크의 제조 방법
JP7080070B2 (ja) フォトマスク、及び表示装置の製造方法
JP5719948B2 (ja) 光学素子の製造方法
JP5907634B2 (ja) 光学素子の製造方法
US7632613B2 (en) Levenson type phase shift mask and manufacturing method thereof
US7183025B2 (en) Phase difference specifying method
JP2005181721A (ja) ハーフトーン位相シフトマスク
KR100653993B1 (ko) 다중투과 위상 마스크 및 그 제조 방법
JP4872737B2 (ja) 位相シフトマスクの製造方法および位相シフトマスク
JP7489359B2 (ja) パターン修正方法
JP2005181722A (ja) ハーフトーン位相シフトマスク
JP4655532B2 (ja) 露光用マスクの製造方法
JP5239799B2 (ja) ハーフトーン型位相シフトマスク
TW202314379A (zh) 圖案校正方法及光掩模
JP2003114516A (ja) ハーフトーン型位相シフトマスク

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120528

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120528

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130812

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130815

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131011

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140204

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140212

R150 Certificate of patent or registration of utility model

Ref document number: 5479074

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250