KR101159959B1 - 광학 소자의 제조 방법, 광학 소자 - Google Patents

광학 소자의 제조 방법, 광학 소자 Download PDF

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KR101159959B1
KR101159959B1 KR1020100037430A KR20100037430A KR101159959B1 KR 101159959 B1 KR101159959 B1 KR 101159959B1 KR 1020100037430 A KR1020100037430 A KR 1020100037430A KR 20100037430 A KR20100037430 A KR 20100037430A KR 101159959 B1 KR101159959 B1 KR 101159959B1
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South Korea
Prior art keywords
phase shifter
light
substrate
pattern
light shielding
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KR20110073184A (ko
Inventor
가즈히데 야마시로
히데끼 스다
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호야 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020100037430A 2009-12-21 2010-04-22 광학 소자의 제조 방법, 광학 소자 Active KR101159959B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-289010 2009-12-21
JP2009289010A JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子

Related Child Applications (1)

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KR1020120049848A Division KR101297517B1 (ko) 2009-12-21 2012-05-10 광학 소자의 제조 방법, 광학 소자

Publications (2)

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KR20110073184A KR20110073184A (ko) 2011-06-29
KR101159959B1 true KR101159959B1 (ko) 2012-06-25

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KR1020100037430A Active KR101159959B1 (ko) 2009-12-21 2010-04-22 광학 소자의 제조 방법, 광학 소자
KR1020120049848A Active KR101297517B1 (ko) 2009-12-21 2012-05-10 광학 소자의 제조 방법, 광학 소자

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KR1020120049848A Active KR101297517B1 (ko) 2009-12-21 2012-05-10 광학 소자의 제조 방법, 광학 소자

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Country Link
US (1) US8273506B2 (enExample)
JP (1) JP5479074B2 (enExample)
KR (2) KR101159959B1 (enExample)
CN (1) CN102103326B (enExample)
TW (1) TWI467320B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432603B2 (en) 2009-03-31 2013-04-30 View, Inc. Electrochromic devices
US9958750B2 (en) 2010-11-08 2018-05-01 View, Inc. Electrochromic window fabrication methods
US12403676B2 (en) 2011-12-12 2025-09-02 View Operating Corporation Thin-film devices and fabrication
US12061402B2 (en) 2011-12-12 2024-08-13 View, Inc. Narrow pre-deposition laser deletion
US11865632B2 (en) 2011-12-12 2024-01-09 View, Inc. Thin-film devices and fabrication
US10295880B2 (en) 2011-12-12 2019-05-21 View, Inc. Narrow pre-deposition laser deletion
CN104011588B (zh) 2011-12-12 2021-06-22 唯景公司 薄膜装置和制造
US10802371B2 (en) 2011-12-12 2020-10-13 View, Inc. Thin-film devices and fabrication
CN109298592A (zh) * 2012-02-15 2019-02-01 大日本印刷株式会社 相移掩模及使用该相移掩模的抗蚀图案形成方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
TWI689771B (zh) * 2014-07-03 2020-04-01 美商唯景公司 雷射圖案化電致變色裝置
US12235560B2 (en) 2014-11-25 2025-02-25 View, Inc. Faster switching electrochromic devices
CA2980477A1 (en) 2015-03-20 2016-09-29 View, Inc. Faster switching low-defect electrochromic windows
JP2017072842A (ja) * 2016-11-09 2017-04-13 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
US12078921B2 (en) 2020-11-20 2024-09-03 Entegris, Inc. Phase-shift reticle for use in photolithography
CN113589641B (zh) * 2021-07-20 2024-03-19 华虹半导体(无锡)有限公司 相移掩模的制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004029747A (ja) * 2002-04-30 2004-01-29 Matsushita Electric Ind Co Ltd フォトマスク、その作成方法、及びそのフォトマスクを用いたパターン形成方法
JP2005062571A (ja) * 2003-08-15 2005-03-10 Hoya Corp 位相シフトマスクの製造方法
KR20090044534A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 노광 마스크, 노광 마스크 제조 방법 및 이를 이용한반도체 소자의 제조 방법

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KR100322537B1 (ko) * 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
JP2003121988A (ja) * 2001-10-12 2003-04-23 Hoya Corp ハーフトーン型位相シフトマスクの欠陥修正方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP2003330159A (ja) 2002-05-09 2003-11-19 Nec Electronics Corp 透過型位相シフトマスク及び該透過型位相シフトマスクを用いたパターン形成方法
TWI243280B (en) * 2004-05-19 2005-11-11 Prodisc Technology Inc Optical device manufacturing method
JP4566666B2 (ja) * 2004-09-14 2010-10-20 富士通セミコンダクター株式会社 露光用マスクとその製造方法
JP4823711B2 (ja) * 2006-02-16 2011-11-24 Ｈｏｙａ株式会社 パターン形成方法及び位相シフトマスクの製造方法
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
TW200736821A (en) * 2006-03-16 2007-10-01 Hoya Corp Pattern forming method and method of producing a gray tone mask
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP5254581B2 (ja) * 2007-08-22 2013-08-07 Ｈｏｙａ株式会社 フォトマスク及びフォトマスクの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004029747A (ja) * 2002-04-30 2004-01-29 Matsushita Electric Ind Co Ltd フォトマスク、その作成方法、及びそのフォトマスクを用いたパターン形成方法
JP2005062571A (ja) * 2003-08-15 2005-03-10 Hoya Corp 位相シフトマスクの製造方法
KR20090044534A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 노광 마스크, 노광 마스크 제조 방법 및 이를 이용한반도체 소자의 제조 방법

Also Published As

Publication number Publication date
KR20120054584A (ko) 2012-05-30
CN102103326A (zh) 2011-06-22
KR101297517B1 (ko) 2013-08-16
TW201122720A (en) 2011-07-01
KR20110073184A (ko) 2011-06-29
JP2011128504A (ja) 2011-06-30
US8273506B2 (en) 2012-09-25
CN102103326B (zh) 2013-01-23
JP5479074B2 (ja) 2014-04-23
TWI467320B (zh) 2015-01-01
US20110151383A1 (en) 2011-06-23

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