TWI467320B - 光學元件之製造方法、光學元件 - Google Patents

光學元件之製造方法、光學元件 Download PDF

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Publication number
TWI467320B
TWI467320B TW99111677A TW99111677A TWI467320B TW I467320 B TWI467320 B TW I467320B TW 99111677 A TW99111677 A TW 99111677A TW 99111677 A TW99111677 A TW 99111677A TW I467320 B TWI467320 B TW I467320B
Authority
TW
Taiwan
Prior art keywords
light
film
substrate
optical element
phase shifting
Prior art date
Application number
TW99111677A
Other languages
English (en)
Chinese (zh)
Other versions
TW201122720A (en
Inventor
Kazuhide Yamashiro
Hideki Suda
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201122720A publication Critical patent/TW201122720A/zh
Application granted granted Critical
Publication of TWI467320B publication Critical patent/TWI467320B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW99111677A 2009-12-21 2010-04-14 光學元件之製造方法、光學元件 TWI467320B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009289010A JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子

Publications (2)

Publication Number Publication Date
TW201122720A TW201122720A (en) 2011-07-01
TWI467320B true TWI467320B (zh) 2015-01-01

Family

ID=44151602

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99111677A TWI467320B (zh) 2009-12-21 2010-04-14 光學元件之製造方法、光學元件

Country Status (5)

Country Link
US (1) US8273506B2 (enExample)
JP (1) JP5479074B2 (enExample)
KR (2) KR101159959B1 (enExample)
CN (1) CN102103326B (enExample)
TW (1) TWI467320B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432603B2 (en) 2009-03-31 2013-04-30 View, Inc. Electrochromic devices
US9958750B2 (en) 2010-11-08 2018-05-01 View, Inc. Electrochromic window fabrication methods
US12403676B2 (en) 2011-12-12 2025-09-02 View Operating Corporation Thin-film devices and fabrication
US12061402B2 (en) 2011-12-12 2024-08-13 View, Inc. Narrow pre-deposition laser deletion
US11865632B2 (en) 2011-12-12 2024-01-09 View, Inc. Thin-film devices and fabrication
US10295880B2 (en) 2011-12-12 2019-05-21 View, Inc. Narrow pre-deposition laser deletion
CN104011588B (zh) 2011-12-12 2021-06-22 唯景公司 薄膜装置和制造
US10802371B2 (en) 2011-12-12 2020-10-13 View, Inc. Thin-film devices and fabrication
CN109298592A (zh) * 2012-02-15 2019-02-01 大日本印刷株式会社 相移掩模及使用该相移掩模的抗蚀图案形成方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
TWI689771B (zh) * 2014-07-03 2020-04-01 美商唯景公司 雷射圖案化電致變色裝置
US12235560B2 (en) 2014-11-25 2025-02-25 View, Inc. Faster switching electrochromic devices
CA2980477A1 (en) 2015-03-20 2016-09-29 View, Inc. Faster switching low-defect electrochromic windows
JP2017072842A (ja) * 2016-11-09 2017-04-13 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
US12078921B2 (en) 2020-11-20 2024-09-03 Entegris, Inc. Phase-shift reticle for use in photolithography
CN113589641B (zh) * 2021-07-20 2024-03-19 华虹半导体(无锡)有限公司 相移掩模的制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6576374B1 (en) * 1999-07-02 2003-06-10 Samsung Electronics Co., Ltd. Mask blank and method of fabricating phase shift mask from the same
TWI243280B (en) * 2004-05-19 2005-11-11 Prodisc Technology Inc Optical device manufacturing method
US20070190434A1 (en) * 2006-02-16 2007-08-16 Hoya Corporation Pattern forming method and phase shift mask manufacturing method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
JP2003121988A (ja) * 2001-10-12 2003-04-23 Hoya Corp ハーフトーン型位相シフトマスクの欠陥修正方法
JP3727319B2 (ja) 2002-04-30 2005-12-14 松下電器産業株式会社 フォトマスク及びその作成方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP2003330159A (ja) 2002-05-09 2003-11-19 Nec Electronics Corp 透過型位相シフトマスク及び該透過型位相シフトマスクを用いたパターン形成方法
JP4443873B2 (ja) 2003-08-15 2010-03-31 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
JP4566666B2 (ja) * 2004-09-14 2010-10-20 富士通セミコンダクター株式会社 露光用マスクとその製造方法
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
TW200736821A (en) * 2006-03-16 2007-10-01 Hoya Corp Pattern forming method and method of producing a gray tone mask
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP5254581B2 (ja) * 2007-08-22 2013-08-07 Ｈｏｙａ株式会社 フォトマスク及びフォトマスクの製造方法
KR20090044534A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 노광 마스크, 노광 마스크 제조 방법 및 이를 이용한반도체 소자의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6576374B1 (en) * 1999-07-02 2003-06-10 Samsung Electronics Co., Ltd. Mask blank and method of fabricating phase shift mask from the same
TWI243280B (en) * 2004-05-19 2005-11-11 Prodisc Technology Inc Optical device manufacturing method
US20070190434A1 (en) * 2006-02-16 2007-08-16 Hoya Corporation Pattern forming method and phase shift mask manufacturing method

Also Published As

Publication number Publication date
KR20120054584A (ko) 2012-05-30
CN102103326A (zh) 2011-06-22
KR101297517B1 (ko) 2013-08-16
TW201122720A (en) 2011-07-01
KR20110073184A (ko) 2011-06-29
JP2011128504A (ja) 2011-06-30
US8273506B2 (en) 2012-09-25
CN102103326B (zh) 2013-01-23
JP5479074B2 (ja) 2014-04-23
KR101159959B1 (ko) 2012-06-25
US20110151383A1 (en) 2011-06-23

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