CN102089708A - 适应性纳米形貌雕刻 - Google Patents

适应性纳米形貌雕刻 Download PDF

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Publication number
CN102089708A
CN102089708A CN2009801222088A CN200980122208A CN102089708A CN 102089708 A CN102089708 A CN 102089708A CN 2009801222088 A CN2009801222088 A CN 2009801222088A CN 200980122208 A CN200980122208 A CN 200980122208A CN 102089708 A CN102089708 A CN 102089708A
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CN
China
Prior art keywords
polymerizable material
pattern
nanotopography
template
drippage
Prior art date
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Pending
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CN2009801222088A
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English (en)
Chinese (zh)
Inventor
A·帕伽
S·V·斯利尼瓦森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Texas System
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University of Texas System
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Publication date
Application filed by University of Texas System filed Critical University of Texas System
Publication of CN102089708A publication Critical patent/CN102089708A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
CN2009801222088A 2008-06-09 2009-06-05 适应性纳米形貌雕刻 Pending CN102089708A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US6000708P 2008-06-09 2008-06-09
US61/060,007 2008-06-09
US12/479,200 US8394282B2 (en) 2008-06-09 2009-06-05 Adaptive nanotopography sculpting
US12/479,200 2009-06-05
PCT/US2009/003420 WO2009151560A2 (en) 2008-06-09 2009-06-05 Adaptive nanotopography sculpting

Publications (1)

Publication Number Publication Date
CN102089708A true CN102089708A (zh) 2011-06-08

Family

ID=41323556

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801222088A Pending CN102089708A (zh) 2008-06-09 2009-06-05 适应性纳米形貌雕刻

Country Status (6)

Country Link
US (1) US8394282B2 (https=)
EP (1) EP2304501A2 (https=)
JP (1) JP5349588B2 (https=)
KR (1) KR101653195B1 (https=)
CN (1) CN102089708A (https=)
WO (1) WO2009151560A2 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105682808A (zh) * 2013-08-19 2016-06-15 德克萨斯大学系统董事会 以纳米级精确度可程序化的沉积用户自定义外形的薄膜
CN109445247A (zh) * 2018-11-16 2019-03-08 京东方科技集团股份有限公司 压印模板及其制备方法和压印方法
CN110156343A (zh) * 2018-02-14 2019-08-23 佳能株式会社 覆板及其使用方法
CN115699254A (zh) * 2020-06-19 2023-02-03 佳能株式会社 平坦化方法和光可固化组合物
TWI870632B (zh) * 2020-12-10 2025-01-21 日商佳能股份有限公司 平面化設備、平面化方法及物品製造方法
US12482662B2 (en) 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers

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JP7195789B2 (ja) * 2018-06-29 2022-12-26 キヤノン株式会社 平坦化装置、及び物品の製造方法
JP7218114B2 (ja) * 2018-07-12 2023-02-06 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
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US11204549B2 (en) * 2018-10-26 2021-12-21 Canon Kabushiki Kaisha Superstrate with an offset mesa and methods of using the same
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JP7171394B2 (ja) 2018-11-29 2022-11-15 キヤノン株式会社 成形装置、成形方法、および物品の製造方法
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JP7267783B2 (ja) * 2019-03-07 2023-05-02 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
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CN105682808B (zh) * 2013-08-19 2018-03-27 德克萨斯大学系统董事会 以纳米级精确度可程序化的沉积用户自定义外形的薄膜
CN110156343A (zh) * 2018-02-14 2019-08-23 佳能株式会社 覆板及其使用方法
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CN109445247B (zh) * 2018-11-16 2020-06-19 京东方科技集团股份有限公司 压印模板及其制备方法和压印方法
CN115699254A (zh) * 2020-06-19 2023-02-03 佳能株式会社 平坦化方法和光可固化组合物
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TWI870632B (zh) * 2020-12-10 2025-01-21 日商佳能股份有限公司 平面化設備、平面化方法及物品製造方法
US12482662B2 (en) 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers

Also Published As

Publication number Publication date
KR101653195B1 (ko) 2016-09-01
EP2304501A2 (en) 2011-04-06
JP5349588B2 (ja) 2013-11-20
WO2009151560A2 (en) 2009-12-17
KR20110025951A (ko) 2011-03-14
US20100012622A1 (en) 2010-01-21
WO2009151560A3 (en) 2010-01-28
US8394282B2 (en) 2013-03-12
JP2011529626A (ja) 2011-12-08

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