CN102084435A - 金属糊料和油墨 - Google Patents
金属糊料和油墨 Download PDFInfo
- Publication number
- CN102084435A CN102084435A CN2009801259256A CN200980125925A CN102084435A CN 102084435 A CN102084435 A CN 102084435A CN 2009801259256 A CN2009801259256 A CN 2009801259256A CN 200980125925 A CN200980125925 A CN 200980125925A CN 102084435 A CN102084435 A CN 102084435A
- Authority
- CN
- China
- Prior art keywords
- metal
- thickener
- sintering
- metal thickener
- curing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000976 ink Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 239000004020 conductor Substances 0.000 claims abstract description 46
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract 3
- 238000005245 sintering Methods 0.000 claims description 101
- 239000002562 thickening agent Substances 0.000 claims description 87
- 239000010949 copper Substances 0.000 claims description 47
- 229910052802 copper Inorganic materials 0.000 claims description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 36
- 238000007639 printing Methods 0.000 claims description 29
- 239000002905 metal composite material Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 abstract description 19
- 230000008023 solidification Effects 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 11
- 239000007788 liquid Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 101100162703 Caenorhabditis elegans ani-1 gene Proteins 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 239000003708 ampul Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 101100162705 Caenorhabditis elegans ani-2 gene Proteins 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010013786 Dry skin Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- RXKJFZQQPQGTFL-UHFFFAOYSA-N dihydroxyacetone Chemical compound OCC(=O)CO RXKJFZQQPQGTFL-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000003280 down draw process Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008241 heterogeneous mixture Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10287—Metal wires as connectors or conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1453—Applying the circuit pattern before another process, e.g. before filling of vias with conductive paste, before making printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Electric Cables (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
本发明揭示一种金属组合物,其包含溶剂和多个分散在溶剂中的金属纳米颗粒,对所述金属组合物进行配制,使得该金属组合物在基材上固化后能提供电阻率等于或小于约5x10-4Ω·cm的金属导体。电组件的电部件可通过金属导体互连,所述金属导体通过在基材上固化所述金属组合物而形成。可将包含金属纳米颗粒的金属组合物沉积在基材上并固化。金属组合物可在固化之前或之后与金属线接触,固定到固化的金属组合物上。
Description
相关申请的交叉引用
本申请要求Roundhill等的美国临时申请第61/077,711号和Roundhill等的美国临时申请第61/081,539号的优先权,其全部内容通过引用纳入本文。
技术领域
本申请涉及可用于形成导电性提高的金属导体的金属糊料和油墨。
背景技术
金属糊料如金属油墨可由金属纳米颗粒、液体载剂、分散剂和其它添加剂配制。可引入添加剂来改变物理性质,例如粘度、润湿性和在所选择基材上的接触角。与油墨相比(例如小于约5000cP),糊料的较高粘度(例如约10,000cP到约60,000cP)有助于金属纳米颗粒持久稳定地分散。金属油墨或糊料的应用可基于多种因素,包括印刷方法和基材。低粘度(例如小于约20cP,或者在约10cP到约20cP之间)的油墨可以进行喷墨印刷或气溶胶印刷。糊料的粘度太高,难以进行喷墨印刷,可以通过适用于较高粘度的丝网印刷或其它方法进行施涂。
但是,一些金属糊料或油墨需要在惰性气氛中,在较高的温度下加热,该条件对于一些应用如挠性电子器件(例如具有聚合物基材)是不合适的。另外,一些金属糊料或油墨包含一种或多种高沸点液体组分。当含有高沸点组分的金属糊料或油墨通过在空气中缓慢热烧结处理而固化时,这些高沸点组分会形成非挥发性产物而留在固化的导体中。在惰性气氛中进行的热烧结过程也会发生热分解,产生非挥发性产物,使导体受污染,具有较高的电阻率。在一些情况中,来自液体载剂的有机残余物使导体和基材之间的粘附作用下降,降低了金属导体的品质。
附图简要说明
图1是说明金属组合物的制备过程的流程图。
图2是说明通过包括光烧结(photosintering)的工艺形成金属导体的方法的流程图。
图3说明通过热烧结和光烧结形成的铜导体的电阻率与加工温度的关系。
图4说明具有芯片的组件,所述芯片通过由金属组合物制备的印刷导体互相连接。
图5说明具有芯片的组件,所述芯片通过由金属组合物制备的印刷导体形成的通孔互相连接。
图6说明固定在经过光烧结的金属凸起上的导线。
图7是说明形成光烧结金属凸起的步骤的流程图。
图8说明固定在经过光烧结的金属凸起之间的金属线。
图9A-9F显示将铜线固定到经过光烧结的铜凸起上的各阶段的照片。
图10说明经过光烧结的柔顺性金属凸起。
发明详述
为低温加工配制的金属组合物(例如油墨和糊料)适合用在制造印刷电子器件中,适合作为导电粘合剂,或者适合用在其它应用中,包括各种电学部件和电路(例如电极和互连)的制造和组装。金属组合物包括在适合光烧结的光学透明的载剂中的金属纳米颗粒(例如铜、镍、银、金、铝、钴、钼、锌等)。这些组合物中的纳米颗粒可依据尺寸和钝化涂层加以选择,组合物经适当配制后,可用于精确印刷。印刷组合物中的纳米颗粒可以在不影响塑料基材的温度下固化(例如光烧结、热烧结或光烧结加热烧结)为整体金属膜或线。
文中所述的金属组合物经过调配,所生成的固化导体所含有的来自液体载剂的有机残余物的量减少。金属组合物可以采用光烧结方法进行烧结(例如,小于约5msec,小于约2msec,或者小于约1msec),产生金属导体。在此光烧结方法中,高强度光脉冲(例如,约50,000,100,000,或150,00勒克斯或更高)被组合物中的金属纳米颗粒吸收,然后转化为热量。因此,金属组合物经历短的高热脉冲,使有机组分在经历热氧化或分解之前快速蒸发。金属组合物(例如糊料和油墨)的这种光烧结产生具有高电导率的导体,这种高电导率可以在较低的温度下形成,并且该导体具有比只采用热烧结过程得到的产品更低的电阻率。
在一些实施方式中,文中所述的金属组合物经过配制,能够在聚合物基材上进行光烧结和/或热烧结(例如,在空气或合成气体(forming gas)中),得到电阻率降低的导体。例如,由文中所述的铜糊料制备的铜导体的电阻率在约1x10-3Ω·cm到约1x10-6Ω·cm之间。也就是说,铜导体的电阻率可以小于约1x10-3Ω·cm,小于约1x10-4Ω·cm,小于约1x10-5Ω·cm,或者大于约1x10-6Ω·cm。
图1显示了用于形成高电导率(低电阻率)导体的金属组合物的制备过程的一个实施方式。制备过程100可以在惰性气氛中进行。在步骤102中,制备所需量(例如体积)的液体载剂。液体载剂可包括例如芳香化合物,脂族酮和醇,酯,以及它们的任意组合。如果载剂包含不止一种组分,则这些组分可以混合在一起。在步骤104中,向载剂中加入一种或多种分散剂,搅动(例如搅拌、摇晃、混合、超声处理等)混合物,使其达到均匀。分散剂可包括例如短链聚合胺、醇、磺酸盐、磷酸盐以及它们的任意组合。在步骤106中,向载剂中加入一定量的金属纳米颗粒(例如,以纳米粉末的形式),以获得所需的铜加载量。在一些实施方式中,纳米粉末可为组合物的约30重量%至约70重量%,或者约50重量%至约80重量%。然后,搅动该非均匀混合物,形成糊料。在步骤108中,可对糊料进行超声处理,形成均匀的分散体。该超声处理可通过在低能量下进行较短的时间来完成(例如短于约10分钟,约2-8分钟,或者约5分钟)。超声浴的液体可以冷却(例如,冷却到约0℃)。如果超声处理时间过长或者超声能量过高,则气穴现象可能导致局部过热到不能接受的高温,引起金属纳米颗粒的聚集或团聚。在超声处理过程中冷却金属糊料(例如,冷却到约0℃)有助于抑制金属纳米颗粒发生聚集或团聚。金属纳米颗粒的聚集或团聚可能导致在烧结步骤中形成较大的粒度,并且降低性能。对于铜纳米颗粒而言,聚集是非常麻烦的问题,因为可能形成铜-铜化学键。这些铜-铜键不会因为随后的机械作用而断裂。在步骤110中,可加入添加剂并与糊料混合,这些添加剂经过选择,以调节粘度、润湿性或接触角之类的性质。添加剂可以是共价化合物、离子化合物或它们的任意组合。
按照图1所述制备的金属糊料可通过光烧结过程成形为导体(例如,导电膜)。例如,可以通过下拉法将金属糊料涂布到基材(例如可购自杜邦公司(DuPont)的KAPTON聚酰亚胺膜)上。光烧结过程可包括预干燥步骤,然后通过闪光将金属纳米颗粒光烧结为例如金属膜。例如,涂层可以在空气中,在约100℃干燥约60分钟。该步骤促进挥发性组分从印刷糊料上去除。如果任由挥发性组分留在糊料中,则光烧结步骤中的快速蒸发可能导致金属纳米颗粒被从基材上吹散。在干燥后,干燥糊料的电阻率可以例如高达100Ω·cm。在一些实施方式中,可使用较高的温度,在真空下进行干燥步骤或者在红外或微波辐射下进行加热,从而缩短干燥时间。对于不含挥发性液体组分的铜糊料,可以省略干燥步骤,从而缩短加工时间。
干燥的糊料可以在合成气体或空气中固化。例如,干燥的糊料可以在最多含有约10体积%氢气的氮气混合物(例如含有约3体积%-5体积%氢气的氮气)中,在约350℃热烧结约60分钟。对于含有约20纳米到约200纳米的纳米颗粒的铜糊料而言,热烧结的膜的电阻率约为3x10-4Ω·cm。合成气体可将干燥糊料中的铜氧化物还原为铜。例如,合成气体中的氢气组分与铜氧化物反应形成铜和水,如下所示:
CuO+H2→Cu+H2O
和
Cu2O+H2→2Cu+H2O。
水蒸气可随合成气体被带走。
热烧结的金属组合物可在合成气体或空气中进行光烧结,以降低其电阻率。光烧结包括使金属组合物经受闪光。闪光的强度(通过电压量度)和时间(通过脉冲宽度量度)可加以选择,以减少从基材上吹散的金属颗粒的量,降低所得导体的电阻率,以及提高所得导体对基材的粘附性。在一个例子中,当热烧结的铜导体在空气中光烧结后,导体的厚度约为1微米,导体的电阻率约为2x10-5Ω·cm。
金属糊料可以在空气或惰性气氛中干燥。金属糊料或干燥的金属糊料可以热固化,形成金属导体。热烧结的导体可进行光烧结,以降低导体的电阻率。在一些情况中,干燥的金属糊料可以在未经历热烧结的情况下进行光烧结。图2显示由金属组合物形成低电阻率导体的方法200。在步骤202中,将金属糊料施涂到基材上。在步骤204中,可对基材进行加热(例如,在烘箱中,在约100℃加热约60分钟),以干燥糊料。在步骤206中,可对干燥的糊料进行热烧结。
在一个例子中,热烧结可包括以下步骤。在室温下,将带干燥的金属糊料的基材放入石英管中。对该石英管进行抽气(例如,至约100毫托)。将该石英管加热(例如,至约350℃),并用合成气体(例如混有约4体积%氢气的氮气)吹扫,直到温度稳定。经过涂布的基材可在350℃加热约60分钟。在停止提供合成气体和关闭加热器后,用惰性气体(例如氮气)吹扫该石英管,以冷却基材(例如,冷却到100℃以下)。将带热烧结的导体的基材从石英管中取出。
在步骤208中,可对干燥的或热烧结的金属糊料进行光烧结。可使用高压闪光氙气灯进行光烧结。可在小于约100℃的温度(例如环境温度或约20℃)完成光烧结,以得到电阻率降低且对基材的粘附性提高的导体。通过参考引入本文的美国专利申请公开第2008/0286488号描述了光烧结方法。
光烧结和热烧结的比较如表1所示。
表1.光烧结和热烧结的比较
铜糊料ANI-1和ANI-2的配方如表2所示。
表2.铜糊料配方
图3显示表1的铜导体的电阻率(Ω·cm)与烧结温度的关系。点300表明通过在合成气体环境中热烧结铜糊料ANI-1形成的导体的电阻率约为3x10-4Ω·cm。点302表明通过在合成气体环境中热烧结铜糊料ANI-1(点300),然后在空气中在约20℃光烧结(1.2msec,1200V)形成的导电膜的电阻率为2x10-5Ω·cm。因此,光烧结步骤将电阻率降低了约1个数量级。
点304、306和308表明通过在空气中,在约100℃、约200℃和约300℃热烧结铜糊料ANI-1形成的导电膜的电阻率约为4.5x103Ω·cm。点310表明通过在空气中热烧结铜糊料ANI-1(点304、306和308),然后在空气中在约20℃光烧结(1.2msec,1200V)形成的导电膜的电阻率约为2x10-4Ω·cm。因此,光烧结步骤将电阻率降低了7个数量级以上。
点312、314和316表明在合成气体(含有4体积%H2的N2)中,分别在300℃、350℃、500℃热烧结ANI-2糊料(纳米颗粒尺寸为200纳米,无添加剂或分散剂)形成的导电膜的电阻率分别为约4x102Ω·cm、约2x102Ω·cm和约2x10-4Ω·cm。因此,图3表明在一定的温度(例如在一些情况中的约400℃)以下,可使用光烧结来获得比单独使用热烧结更低的电阻率。
在一些实施方式中,干燥的金属糊料可以在无中间热烧结步骤的情况下进行光烧结。这是有利的,因为基材可能被较高的热烧结温度破坏。因为光烧结方法中涉及低温(例如低于100℃),可使用光烧结方法由金属糊料和油墨
在包含聚乙烯、聚酯、阻燃剂4等聚合物的基材上形成电阻率在10-5Ω·cm数量级或更低的导体(使用或不使用合成气体环境),而不破坏基材。
可使用金属组合物(例如糊料或油墨)制备印刷电路板上的互连。图4显示具有由光烧结的金属糊料形成的印刷金属互连402的组件400。组件400可包括具有两个或更多个芯片406的基材404(例如硅、陶瓷或挠性有机基材,例如聚酰亚胺、聚酯、液晶聚合物等)。各芯片406可具有一个或多个与其它芯片引线408连接的金属引线408。因为光烧结步骤可在低温下进行,所以金属互连402可与芯片引线408直接连接,为组装到基材404上的芯片406之间提供互连。
图5显示组件500,其中由光烧结的金属组合物(例如糊料或油墨)形成的互连402用于填充芯片金属引线408和金属互连402之间的通孔502。基材404(例如硅、陶瓷或挠性有机基材,例如聚酰亚胺、聚酯、液晶聚合物等)可包括两个或多个设置在其上的芯片406,每个芯片具有一个或多个金属引线408。可将保形涂料506印刷到基材401上,以覆盖芯片406。可打钻形成至金属芯片引线408的通孔502,并用导电铜糊料填充该通孔。然后,可将铜互连402印刷到通孔502的顶部,从而连接芯片引线408。该过程可反复进行,以制造多层电路。
可制备高铜负载量(例如约50重量%至约80重量%)的高粘度铜糊料(例如约10,000cP至约60,000cP),从而可以印刷粗线。低电阻率的粗线可以携带许多电子器件所需的高电流密度。可将铜糊料印刷为图4和5中的互连特征402的所需形式,或者使用铜糊料填充图5中的通孔502。可根据不同的互连尺寸或不同的通孔直径和深度调节铜糊料的粘度和润湿特征。
文中所述的金属糊料可用于制备多层互连,以缩短互连长度,降低电阻。因此,可形成重量较轻、实际占用空间较小、噪声较小和电信号损失较低的高密度互连,从而获得改进的芯片与芯片之间的连接。使用文中所述的金属糊料还可省去导线的粘结处理,从而提高为芯片与板之间的互连所作的电路设计的性能和可靠性,并且消除由于使用无铅焊料可能引起的锡须生长(以及随后短路)的风险。通过使用可直接沉积(例如丝网印刷)和光烧结的金属糊料,简化了多层板的制造,并降低了制造成本。
在一些情况中,由金属糊料或油墨形成的导电凸起可用于形成集成电路和其它电子电路之间的界面。图6显示一种电子器件600,其中基材404支承集成电路406。集成电路406与形成在基材404上的金属凸起602电连接。金属凸起602通过导线604与集成电路406连接。在一些实施方式中,金属凸起602由铜糊料或油墨形成,导线604是铜线。
图7显示形成图6中的组件的方法700。在步骤702中,使用根据油墨或糊料的性质(例如粘度)所选择的方法,将金属油墨或糊料的液滴沉积在基材上。基材可以是聚合物,例如聚酰亚胺。在步骤704中,将一部分导线(例如导线末端)插入液滴中。在步骤706中,液滴602固化(例如热烧结、光烧结,等等)。导线的另一部分(例如另一端)可例如固定到集成电路上。光烧结促进金属氧化物的消除(例如通过将铜氧化物还原为铜),以及金属纳米颗粒熔合成大块金属膜。在烧结步骤后,将导线安装到固体金属凸起中,在导线和附着了该金属凸起的基材之间形成电连接。
图8显示器件800,其包括沉积在基材404上并经过光烧结的由金属油墨或糊料形成的导电的线路或垫802。导电的线路或垫的厚度例如约为0.1微米。基材404可包括聚合物材料,例如KAPTON。带状粘结线804位于光烧结的铜垫802上。粘结线804的直径可以例如约为25微米。将金属油墨或糊料的液滴(例如直径约40-60微米)806沉积在导电垫/粘结线的接合处808,焙烧(例如在100℃焙烧30分钟)以干燥液滴。然后对液滴进行光烧结,通过导线接合处808测量电阻。
图9A-9F是就图8所述的方法中各阶段的照片。图9A和9C显示光烧结之前插入铜液滴806中的铜线804。图9B和9D-F显示光烧结之后的铜凸起900。
在一些情况中,如图10所示,金属凸起可以是柔顺性的。可通过将柔顺性聚合物材料1002沉积在基材404上来形成柔顺性凸起1000。然后,将金属油墨或糊料1004沉积在聚合物材料1002上。将导线插入金属油墨或糊料1004中,液滴固化(例如光烧结),从而将导线固定到固化的金属导体上。该过程可以在低于100℃的温度下进行。
由于诸多因素,当金属凸起是由例如铜而非金形成时,制造成本降低。
首先,通过选择的印刷技术可以精确地定位铜液滴(例如铜油墨可以喷墨印刷)。其次,因为铜凸起可以在低于100℃的温度下固化(例如光烧结),所以不存在基材被高温处理破坏的可能,可使用的基材范围更广。再有,因为铜凸起可以在低温下固化,所以烧结可以在空气环境中(而非惰性环境中)进行,并且在粘合芯片垫与导电凸起的过程中,金属发生氧化的可能性也最低。
应理解,虽然已经结合发明详述描述了本发明,但是上面的详述旨在说明而非限制本发明的范围,该范围由所附权利要求的范围限定。其它方面、益处和修改落在所附权利要求的范围内。
Claims (30)
1.一种金属糊料,其包含溶剂和多个分散在溶剂中的金属纳米颗粒,其中,对所述金属糊料进行配制,使得所述金属糊料固化后产生电阻率等于或小于约5x10-4Ω·cm的金属导体。
2.如权利要求1所述的金属糊料,其特征在于,所述金属纳米颗粒包含铜。
3.如权利要求1所述的金属糊料,其特征在于,所述固化包括热烧结。
4.如权利要求3所述的金属糊料,其特征在于,所述固化包括在包含氢气和氮气的合成气体中进行热烧结。
5.如权利要求1所述的金属糊料,其特征在于,所述固化包括光烧结。
6.如权利要求5所述的金属糊料,其特征在于,所述固化包括在空气中,在环境温度下进行光烧结。
7.如权利要求5所述的金属糊料,其特征在于,所述光烧结之前先进行所述金属糊料的热烧结。
8.如权利要求7所述的金属糊料,其特征在于,所述金属糊料的热烧结在合成气体中进行。
9.如权利要求1所述的金属糊料,其特征在于,所述固化在等于或低于约350℃的温度下进行。
10.如权利要求1所述的金属糊料,其特征在于,所述金属糊料在聚合物基材上固化。
11.如权利要求1所述的金属糊料,其特征在于,所述金属纳米颗粒的平均直径约为50纳米到200纳米。
12.一种制备金属导体的方法,所述方法包括固化金属糊料以提供金属导体,其中,所述金属导体的电阻率等于或小于约5x10-4Ω·cm。
13.如权利要求12所述的方法,其特征在于,所述金属糊料包含铜纳米颗粒。
14.如权利要求12所述的方法,其特征在于,所述固化包括在合成气体中进行热烧结。
15.如权利要求14所述的方法,其特征在于,所述合成气体包含氢气和氮气。
16.如权利要求12所述的方法,其特征在于,所述固化包括光烧结。
17.如权利要求16所述的方法,其特征在于,所述固化包括在空气中,在环境温度下进行光烧结。
18.如权利要求16所述的方法,其特征在于,所述方法还包括在光烧结之前热烧结金属糊料。
19.如权利要求16所述的方法,其特征在于,所述方法还包括在光烧结之前,在合成气体中热烧结金属糊料。
20.如权利要求12所述的方法,其特征在于,所述固化在等于或低于约350℃的温度下进行。
21.一种电组件,其包括通过金属导体互连的第一和第二电部件,所述金属导体包含固化的金属糊料或油墨,其中,所述金属导体的电阻率等于或小于约5x10-4Ω·cm。
22.如权利要求21所述的电组件,其特征在于,所述金属糊料或油墨包含铜纳米颗粒。
23.如权利要求21所述的电组件,其特征在于,所述固化的金属糊料或油墨包含热烧结的金属糊料或油墨。
24.如权利要求21所述的电组件,其特征在于,所述固化的金属糊料或油墨包含光烧结的金属糊料或油墨。
25.如权利要求21所述的电组件,其特征在于,所述金属导体的电阻率等于或小于约2x10-5Ω·cm。
26.如权利要求21所述的电组件,其特征在于,所述金属导体直接接触所述第一和第二电部件。
27.如权利要求21所述的电组件,其特征在于,所述金属导体通过填充了热烧结或光烧结的金属糊料的通孔与所述第一和第二电部件连接。
28.一种将导线固定到导体上的方法,所述方法包括:
将金属组合物液滴沉积到基材上,所述金属组合物包含金属纳米颗粒;
将金属线的一部分插入所述液滴中;
烧结所述金属组合物;和
将导线固定到固化的金属组合物上。
29.如权利要求28所述的方法,其特征在于,所述金属线的一部分在金属组合物烧结之后插入所述金属组合物中。
30.如权利要求28所述的方法,其特征在于,所述金属纳米颗粒包含铜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510167222.7A CN104812175B (zh) | 2008-07-02 | 2009-07-02 | 金属糊料和油墨 |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7771108P | 2008-07-02 | 2008-07-02 | |
US61/077,711 | 2008-07-02 | ||
US8153908P | 2008-07-17 | 2008-07-17 | |
US61/081,539 | 2008-07-17 | ||
US12/496,453 | 2009-07-01 | ||
US12/496,453 US20100000762A1 (en) | 2008-07-02 | 2009-07-01 | Metallic pastes and inks |
PCT/US2009/049510 WO2010003056A1 (en) | 2008-07-02 | 2009-07-02 | Metallic pastes and inks |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510167222.7A Division CN104812175B (zh) | 2008-07-02 | 2009-07-02 | 金属糊料和油墨 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102084435A true CN102084435A (zh) | 2011-06-01 |
CN102084435B CN102084435B (zh) | 2015-04-29 |
Family
ID=41463474
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510167222.7A Active CN104812175B (zh) | 2008-07-02 | 2009-07-02 | 金属糊料和油墨 |
CN200980125925.6A Active CN102084435B (zh) | 2008-07-02 | 2009-07-02 | 金属糊料和油墨 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510167222.7A Active CN104812175B (zh) | 2008-07-02 | 2009-07-02 | 金属糊料和油墨 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100000762A1 (zh) |
EP (1) | EP2301043B1 (zh) |
JP (1) | JP6337249B2 (zh) |
KR (1) | KR101610790B1 (zh) |
CN (2) | CN104812175B (zh) |
TW (1) | TWI606460B (zh) |
WO (1) | WO2010003056A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103428996A (zh) * | 2012-04-20 | 2013-12-04 | 古德里奇公司 | 印刷加热元件 |
CN104303242A (zh) * | 2012-07-03 | 2015-01-21 | 日本石原化学株式会社 | 导电膜形成方法与烧结助剂 |
CN105210156A (zh) * | 2013-05-14 | 2015-12-30 | 日本石原化学株式会社 | 铜微粒分散体、导电膜形成方法以及电路板 |
CN104303242B (zh) * | 2012-07-03 | 2016-11-30 | 日本石原化学株式会社 | 导电膜形成方法与烧结助剂 |
CN107533892A (zh) * | 2015-04-24 | 2018-01-02 | 斯坦雷电气株式会社 | 电阻器的制造方法、电阻器以及电子器件 |
CN107614265A (zh) * | 2015-03-25 | 2018-01-19 | 斯特拉塔西斯公司 | 导电油墨原位烧结的方法和系统 |
CN111106023A (zh) * | 2019-12-31 | 2020-05-05 | 广东芯聚能半导体有限公司 | 芯片表面连接方法、系统及功率模块系统 |
US11090858B2 (en) | 2014-03-25 | 2021-08-17 | Stratasys Ltd. | Method and system for fabricating cross-layer pattern |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110125412A1 (en) * | 1998-12-17 | 2011-05-26 | Hach Company | Remote monitoring of carbon nanotube sensor |
US8958917B2 (en) * | 1998-12-17 | 2015-02-17 | Hach Company | Method and system for remote monitoring of fluid quality and treatment |
US9056783B2 (en) * | 1998-12-17 | 2015-06-16 | Hach Company | System for monitoring discharges into a waste water collection system |
US7454295B2 (en) | 1998-12-17 | 2008-11-18 | The Watereye Corporation | Anti-terrorism water quality monitoring system |
US8920619B2 (en) | 2003-03-19 | 2014-12-30 | Hach Company | Carbon nanotube sensor |
US10231344B2 (en) * | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
US8404160B2 (en) * | 2007-05-18 | 2013-03-26 | Applied Nanotech Holdings, Inc. | Metallic ink |
US8506849B2 (en) * | 2008-03-05 | 2013-08-13 | Applied Nanotech Holdings, Inc. | Additives and modifiers for solvent- and water-based metallic conductive inks |
US9730333B2 (en) * | 2008-05-15 | 2017-08-08 | Applied Nanotech Holdings, Inc. | Photo-curing process for metallic inks |
US8486305B2 (en) | 2009-11-30 | 2013-07-16 | Lockheed Martin Corporation | Nanoparticle composition and methods of making the same |
CN102365713B (zh) | 2009-03-27 | 2015-11-25 | 应用纳米技术控股股份有限公司 | 增强光和/或激光烧结的缓冲层 |
US8422197B2 (en) * | 2009-07-15 | 2013-04-16 | Applied Nanotech Holdings, Inc. | Applying optical energy to nanoparticles to produce a specified nanostructure |
US9011570B2 (en) | 2009-07-30 | 2015-04-21 | Lockheed Martin Corporation | Articles containing copper nanoparticles and methods for production and use thereof |
US9072185B2 (en) | 2009-07-30 | 2015-06-30 | Lockheed Martin Corporation | Copper nanoparticle application processes for low temperature printable, flexible/conformal electronics and antennas |
US8911823B2 (en) | 2010-05-03 | 2014-12-16 | Pen Inc. | Mechanical sintering of nanoparticle inks and powders |
KR101118838B1 (ko) * | 2010-12-29 | 2012-03-14 | 삼성전기주식회사 | 나노 금속 페이스트를 이용한 배선 및 전극의 형성 방법 |
US8889471B2 (en) * | 2011-05-09 | 2014-11-18 | Sichuan Yinhe Chemical Co., Ltd. | Burnthrough formulations |
WO2013043813A1 (en) * | 2011-09-21 | 2013-03-28 | Applied Nanotech Holdings, Inc. | Carbon-metal thermal management substrates |
WO2013052581A1 (en) * | 2011-10-04 | 2013-04-11 | Applied Nanotech Holdings, Inc. | Thin film deposition of materials by external induced release from a ribbon tape |
JP5088761B1 (ja) * | 2011-11-14 | 2012-12-05 | 石原薬品株式会社 | 銅微粒子分散液、導電膜形成方法及び回路基板 |
TWI569700B (zh) * | 2011-11-25 | 2017-02-01 | 昭和電工股份有限公司 | 導電性圖案生成方法 |
JP6032271B2 (ja) * | 2012-02-15 | 2016-11-24 | コニカミノルタ株式会社 | 透明電極の製造方法および有機電子素子の製造方法 |
KR101991676B1 (ko) * | 2012-03-08 | 2019-06-21 | 주식회사 동진쎄미켐 | 투명 전극 형성용 전도성 잉크 조성물 |
JP5179677B1 (ja) * | 2012-03-14 | 2013-04-10 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 太陽電池セルの製造方法 |
JP5489305B2 (ja) * | 2012-06-27 | 2014-05-14 | 石原ケミカル株式会社 | 回路基板及び導電膜形成方法 |
JP5283291B1 (ja) * | 2012-07-03 | 2013-09-04 | 石原薬品株式会社 | 導電膜形成方法及び焼結進行剤 |
WO2014011578A1 (en) * | 2012-07-09 | 2014-01-16 | Applied Nanotech Holdings, Inc. | Photosintering of micron-sized copper particles |
DE102013104577B3 (de) * | 2013-05-03 | 2014-07-24 | Heraeus Noblelight Gmbh | Vorrichtung zum Trocknen und Sintern metallhaltiger Tinte auf einem Substrat |
JP5700864B2 (ja) * | 2013-05-15 | 2015-04-15 | 石原ケミカル株式会社 | 銅微粒子分散液、導電膜形成方法及び回路基板 |
FR3008228B1 (fr) | 2013-07-02 | 2015-07-17 | Commissariat Energie Atomique | Procede d'assemblage de deux composants electroniques, de type flip-chip par recuit uv, assemblage obtenu |
US9521754B1 (en) | 2013-08-19 | 2016-12-13 | Multek Technologies Limited | Embedded components in a substrate |
US9801277B1 (en) | 2013-08-27 | 2017-10-24 | Flextronics Ap, Llc | Bellows interconnect |
US20150064057A1 (en) * | 2013-08-29 | 2015-03-05 | The Regents Of The University Of California | Methods for producing nio nanoparticle thin films and patterning of ni conductors by nio reductive sintering and laser ablation |
US9736947B1 (en) * | 2013-12-16 | 2017-08-15 | Multek Technologies, Ltd. | Nano-copper via fill for enhanced thermal conductivity of plated through-hole via |
US9190322B2 (en) * | 2014-01-24 | 2015-11-17 | Infineon Technologies Ag | Method for producing a copper layer on a semiconductor body using a printing process |
JP6630053B2 (ja) | 2015-03-25 | 2020-01-15 | スタンレー電気株式会社 | 電子デバイスの製造方法 |
JP6473361B2 (ja) | 2015-03-25 | 2019-02-20 | スタンレー電気株式会社 | 電子デバイスの製造方法、および、電子デバイス |
CN107787258A (zh) * | 2015-07-16 | 2018-03-09 | 陶氏环球技术有限责任公司 | 纳米导电粒子沉积层的组合式光和化学烧结 |
US9881895B2 (en) * | 2015-08-18 | 2018-01-30 | Lockheed Martin Corporation | Wire bonding methods and systems incorporating metal nanoparticles |
WO2018142577A1 (ja) * | 2017-02-03 | 2018-08-09 | 株式会社Fuji | 回路形成方法、および回路形成装置 |
KR102002837B1 (ko) * | 2017-03-14 | 2019-10-01 | 한국기계연구원 | 전도성 패턴 형성 이후의 후속공정 조건을 고려한 전자소자 제조시스템 및 이를 이용한 전자소자 제조방법 |
US11022580B1 (en) | 2019-01-31 | 2021-06-01 | Flex Ltd. | Low impedance structure for PCB based electrodes |
US11668686B1 (en) | 2019-06-17 | 2023-06-06 | Flex Ltd. | Batteryless architecture for color detection in smart labels |
WO2022250781A1 (en) * | 2021-05-27 | 2022-12-01 | The Penn State Research Foundation | Fabricating functional circuits on 3d freeform surfaces via intense pulsed light-induced zinc mass transfer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060057502A1 (en) * | 2004-07-23 | 2006-03-16 | Sumitomo Electric Industries, Ltd. | Method of forming a conductive wiring pattern by laser irradiation and a conductive wiring pattern |
US20080020304A1 (en) * | 2004-11-24 | 2008-01-24 | Schroder Kurt A | Electrical, Plating And Catalytic Uses Of Metal Nanomaterial Compositions |
CN101116149A (zh) * | 2004-09-14 | 2008-01-30 | 西玛耐诺技术以色列有限公司 | 可喷墨印刷的组合物 |
Family Cites Families (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3239597A (en) * | 1963-09-16 | 1966-03-08 | Honeywell Inc | Self-repair circuit apparatus |
US3580731A (en) * | 1967-09-26 | 1971-05-25 | Gen Technologies Corp | Method of treating the surface of a filament |
GB1198900A (en) * | 1967-10-25 | 1970-07-15 | Hitachi Ltd | Planar Transistor and Method of Making the Same |
CA962933A (en) * | 1969-12-05 | 1975-02-18 | Yutaka Hori | Metal foil-plastic laminated film and method of producing the same |
US4093466A (en) * | 1975-05-06 | 1978-06-06 | Amp Incorporated | Electroless tin and tin-lead alloy plating baths |
US4194913A (en) * | 1975-05-06 | 1980-03-25 | Amp Incorporated | Electroless tin and tin-lead alloy plating baths |
US4331518A (en) * | 1981-01-09 | 1982-05-25 | Vulcan Materials Company | Bismuth composition, method of electroplating a tin-bismuth alloy and electroplating bath therefor |
US4591951A (en) * | 1984-07-24 | 1986-05-27 | Matsushita Electric Industrial Co., Ltd. | Mounting arrangement for electronic components |
US4640746A (en) * | 1984-10-11 | 1987-02-03 | Learonal, Inc. | Bath and process for plating tin/lead alloys on composite substrates |
US4749626A (en) * | 1985-08-05 | 1988-06-07 | Olin Corporation | Whisker resistant tin coatings and baths and methods for making such coatings |
US4681670A (en) * | 1985-09-11 | 1987-07-21 | Learonal, Inc. | Bath and process for plating tin-lead alloys |
US4756791A (en) * | 1986-08-25 | 1988-07-12 | Gte Laboratories Incorporated | Chemical vapor deposition process for producing metal carbide or nitride whiskers |
US4935312A (en) * | 1987-06-25 | 1990-06-19 | Nippon Mining Co., Ltd. | Film carrier having tin and indium plated layers |
US5008997A (en) * | 1988-09-16 | 1991-04-23 | National Semiconductor | Gold/tin eutectic bonding for tape automated bonding process |
US4922322A (en) * | 1989-02-09 | 1990-05-01 | National Semiconductor Corporation | Bump structure for reflow bonding of IC devices |
JPH02307551A (ja) * | 1989-05-20 | 1990-12-20 | Abisare:Kk | 静電吸着シート |
US4997722A (en) * | 1989-07-10 | 1991-03-05 | Edward Adler | Composition and method for improving adherence of copper foil to resinous substrates |
US4997516A (en) * | 1989-07-10 | 1991-03-05 | Edward Adler | Method for improving adherence of copper foil to resinous substrates |
US5320737A (en) * | 1989-08-10 | 1994-06-14 | Olin Corporation | Treatment to reduce solder plating whisker formation |
US5130275A (en) * | 1990-07-02 | 1992-07-14 | Digital Equipment Corp. | Post fabrication processing of semiconductor chips |
JPH0484449A (ja) * | 1990-07-27 | 1992-03-17 | Shinko Electric Ind Co Ltd | Tabテープ |
JPH04130049A (ja) * | 1990-09-18 | 1992-05-01 | Mitsubishi Materials Corp | セラミックス複合材料及びその製造方法 |
US5393573A (en) * | 1991-07-16 | 1995-02-28 | Microelectronics And Computer Technology Corporation | Method of inhibiting tin whisker growth |
US5861076A (en) * | 1991-07-19 | 1999-01-19 | Park Electrochemical Corporation | Method for making multi-layer circuit boards |
US5492595A (en) * | 1994-04-11 | 1996-02-20 | Electrochemicals, Inc. | Method for treating an oxidized copper film |
CA2143606C (en) * | 1995-02-24 | 1999-07-20 | Peter Arrowsmith | Method of making electronic housings more reliable by preventing formation of metallic whiskers on the sheets used to fabricate them |
WO1997014157A1 (en) * | 1995-10-07 | 1997-04-17 | Img Group Limited | An electrical circuit component formed of a conductive liquid printed directly onto a substrate |
DE69716332T2 (de) * | 1996-04-15 | 2003-02-20 | Teijin Seiki Co. Ltd., Osaka | Verwendung einer photohärtbaren Harzzusammensetzung zur Herstellung eines Objektes mittels Stereolithographie |
TW331698B (en) * | 1996-06-18 | 1998-05-11 | Hitachi Chemical Co Ltd | Multi-layered printed circuit board |
US5724727A (en) * | 1996-08-12 | 1998-03-10 | Motorola, Inc. | Method of forming electronic component |
US5750017A (en) * | 1996-08-21 | 1998-05-12 | Lucent Technologies Inc. | Tin electroplating process |
US5889083A (en) * | 1996-09-06 | 1999-03-30 | Videojet Systems International, Inc. | Aqueous jet ink compositions |
US6679937B1 (en) * | 1997-02-24 | 2004-01-20 | Cabot Corporation | Copper powders methods for producing powders and devices fabricated from same |
US5897519A (en) * | 1997-03-11 | 1999-04-27 | Tapeless Technologies, Inc | Intravenous securing device and secondary wound dressing |
CA2262744C (en) * | 1997-06-09 | 2006-09-19 | Kuraray Co., Ltd. | Polymerizable dental composition |
US6238847B1 (en) * | 1997-10-16 | 2001-05-29 | Dmc Degussa Metals Catalysts Cerdec Ag | Laser marking method and apparatus |
US20050097987A1 (en) * | 1998-02-24 | 2005-05-12 | Cabot Corporation | Coated copper-containing powders, methods and apparatus for producing such powders, and copper-containing devices fabricated from same |
US6139777A (en) * | 1998-05-08 | 2000-10-31 | Matsushita Electric Industrial Co., Ltd. | Conductive paste for filling via-hole, double-sided and multilayer printed circuit boards using the same, and method for producing the same |
KR100629923B1 (ko) * | 1998-09-30 | 2006-09-29 | 돗빤호무즈가부시기가이샤 | 도전성페이스트와 도전성페이스트의 경화방법, 및 도전성페이스트를 이용한 비접촉형 데이터송수신체용 안테나의 형성방법과, 비접촉형 데이터송수신체 |
US6248455B1 (en) * | 1998-12-22 | 2001-06-19 | International Business Machines Corporation | Alloy-plated sheet steel cured with a thin layer of insulating polymer material forming an electrically nonconductive breachable metal substrate |
US6361823B1 (en) * | 1999-12-03 | 2002-03-26 | Atotech Deutschland Gmbh | Process for whisker-free aqueous electroless tin plating |
US6530944B2 (en) * | 2000-02-08 | 2003-03-11 | Rice University | Optically-active nanoparticles for use in therapeutic and diagnostic methods |
US20060110424A1 (en) * | 2000-03-24 | 2006-05-25 | Lyles Mark B | Ceramic and metal compositions |
US20050019543A1 (en) * | 2003-07-24 | 2005-01-27 | Materials Evolution And Development Usa, Inc. | Ceramic and metal compositions |
JP2001325831A (ja) * | 2000-05-12 | 2001-11-22 | Bando Chem Ind Ltd | 金属コロイド液、導電性インク、導電性被膜及び導電性被膜形成用基底塗膜 |
DE50106133D1 (de) * | 2000-09-20 | 2005-06-09 | Schloetter Fa Dr Ing Max | Elektrolyt und verfahren zur abscheidung von zinn-kupfer-legierungsschichten |
US6554914B1 (en) * | 2001-02-02 | 2003-04-29 | Novellus Systems, Inc. | Passivation of copper in dual damascene metalization |
US6742459B2 (en) * | 2001-03-14 | 2004-06-01 | Coors Global Properties, Inc. | System and method for producing a disposable/recyclable pallet |
EP1260614B1 (en) * | 2001-05-24 | 2008-04-23 | Shipley Co. L.L.C. | Tin plating |
US20030025182A1 (en) * | 2001-06-22 | 2003-02-06 | Abys Joseph A. | Metal article coated with tin or tin alloy under tensile stress to inhibit whisker growth |
KR100438408B1 (ko) * | 2001-08-16 | 2004-07-02 | 한국과학기술원 | 금속간의 치환 반응을 이용한 코어-쉘 구조 및 혼합된합금 구조의 금속 나노 입자의 제조 방법과 그 응용 |
US6951666B2 (en) * | 2001-10-05 | 2005-10-04 | Cabot Corporation | Precursor compositions for the deposition of electrically conductive features |
AU2002363192A1 (en) * | 2001-11-01 | 2003-05-12 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Ink-jet inks containing metal nanoparticles |
JP2004143571A (ja) * | 2001-11-22 | 2004-05-20 | Fuji Photo Film Co Ltd | 導電パターン描画用基板およびインク、ならびに導電パターンの形成方法 |
US6682584B2 (en) * | 2001-12-20 | 2004-01-27 | Cima Nanotech, Inc. | Process for manufacture of reacted metal nanoparticles |
AU2003214488B2 (en) * | 2002-01-23 | 2008-02-28 | Contra Vision Ltd. | Printing with differential adhesion |
US6583500B1 (en) * | 2002-02-11 | 2003-06-24 | Texas Instruments Incorporated | Thin tin preplated semiconductor leadframes |
JP4897187B2 (ja) * | 2002-03-05 | 2012-03-14 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | スズメッキ方法 |
US20040026684A1 (en) * | 2002-04-02 | 2004-02-12 | Nanosys, Inc. | Nanowire heterostructures for encoding information |
US6860981B2 (en) * | 2002-04-30 | 2005-03-01 | Technic, Inc. | Minimizing whisker growth in tin electrodeposits |
KR20060012545A (ko) | 2002-07-03 | 2006-02-08 | 나노파우더스 인더스트리어스 리미티드. | 저온 소결처리한 전도성 나노 잉크 및 이것의 제조 방법 |
AU2003281460A1 (en) * | 2002-07-18 | 2004-02-09 | National Institute Of Advanced Industrial Science And Technology | Method of manufacturing microwave reaction device and microwave reaction device |
US20040026256A1 (en) * | 2002-08-08 | 2004-02-12 | Lindgren Joseph T. | Method and apparatus for protecting tooling in a lead-free bath |
EP1400613A2 (en) * | 2002-09-13 | 2004-03-24 | Shipley Co. L.L.C. | Tin plating method |
US7776425B2 (en) * | 2003-01-21 | 2010-08-17 | The Penn State Research Foundation | Nanoparticle coated nanostructured surfaces for detection, catalysis and device applications |
US7195702B2 (en) * | 2003-06-06 | 2007-03-27 | Taskem, Inc. | Tin alloy electroplating system |
US7682970B2 (en) * | 2003-07-16 | 2010-03-23 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
US6940365B2 (en) * | 2003-07-18 | 2005-09-06 | Rfstream Corporation | Methods and apparatus for an improved discrete LC filter |
CN1849853A (zh) * | 2003-09-12 | 2006-10-18 | 独立行政法人产业技术综合研究所 | 衬底及其制备方法 |
US7062848B2 (en) * | 2003-09-18 | 2006-06-20 | Hewlett-Packard Development Company, L.P. | Printable compositions having anisometric nanostructures for use in printed electronics |
US7391116B2 (en) * | 2003-10-14 | 2008-06-24 | Gbc Metals, Llc | Fretting and whisker resistant coating system and method |
TWI289488B (en) * | 2003-10-20 | 2007-11-11 | Harima Chemicals Inc | Fine metal particles, fine metal oxide particles in the form of dried-up powder, and use of the same |
KR20070033329A (ko) | 2004-02-18 | 2007-03-26 | 버지니아 테크 인터렉추얼 프라퍼티스, 인크. | 인터커넥트를 위한 나노 크기의 금속 페이스트 및 이의사용 방법 |
JP4449676B2 (ja) * | 2004-03-25 | 2010-04-14 | 住友金属鉱山株式会社 | 銅微粒子の製造方法 |
US7019391B2 (en) * | 2004-04-06 | 2006-03-28 | Bao Tran | NANO IC packaging |
US7129444B2 (en) * | 2004-05-17 | 2006-10-31 | Exatec Llc | High performance defrosters for transparent panels |
US20060011267A1 (en) * | 2004-05-28 | 2006-01-19 | Kay Lawrence C | Solder paste and process |
DE102004030930A1 (de) * | 2004-06-25 | 2006-02-23 | Ormecon Gmbh | Zinnbeschichtete Leiterplatten mit geringer Neigung zur Whiskerbildung |
JP4535797B2 (ja) * | 2004-07-21 | 2010-09-01 | ハリマ化成株式会社 | 金属微粒子焼結体型の薄膜導電体層の形成方法、該方法を応用した金属配線ならびに金属薄膜の形成方法 |
US7215014B2 (en) * | 2004-07-29 | 2007-05-08 | Freescale Semiconductor, Inc. | Solderable metal finish for integrated circuit package leads and method for forming |
JP4292122B2 (ja) * | 2004-07-30 | 2009-07-08 | タイコエレクトロニクスアンプ株式会社 | 電気コネクタ |
WO2006110163A2 (en) * | 2004-08-20 | 2006-10-19 | Yale University | Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition |
TW200610122A (en) * | 2004-09-14 | 2006-03-16 | P Kay Metal Inc | Soldering process |
US20060068218A1 (en) * | 2004-09-28 | 2006-03-30 | Hooghan Kultaransingh N | Whisker-free lead frames |
US20060091121A1 (en) * | 2004-10-06 | 2006-05-04 | James Zanolli | Method for reflowing a metal plating layer of a contact and contact formed thereby |
US7242573B2 (en) * | 2004-10-19 | 2007-07-10 | E. I. Du Pont De Nemours And Company | Electroconductive paste composition |
US20060096867A1 (en) * | 2004-11-10 | 2006-05-11 | George Bokisa | Tin alloy electroplating system |
US7705069B2 (en) * | 2004-11-22 | 2010-04-27 | Xerox Corporation | Ink jet composition |
JP2006169592A (ja) * | 2004-12-16 | 2006-06-29 | Sumitomo Electric Ind Ltd | 金属微粒子分散液とそれを用いた配線およびその形成方法 |
US7749299B2 (en) * | 2005-01-14 | 2010-07-06 | Cabot Corporation | Production of metal nanoparticles |
US20060163744A1 (en) * | 2005-01-14 | 2006-07-27 | Cabot Corporation | Printable electrical conductors |
US7749922B2 (en) * | 2005-05-05 | 2010-07-06 | The Board Of Trustees Of The University Of Illinois | Nanowire structures and electrical devices |
US7507618B2 (en) * | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
US20070007144A1 (en) * | 2005-07-11 | 2007-01-11 | Schetty Robert A Iii | Tin electrodeposits having properties or characteristics that minimize tin whisker growth |
JP4978844B2 (ja) * | 2005-07-25 | 2012-07-18 | 住友金属鉱山株式会社 | 銅微粒子分散液及びその製造方法 |
JP2007042725A (ja) * | 2005-08-01 | 2007-02-15 | Konica Minolta Holdings Inc | 金属パターンの形成方法 |
JP5546763B2 (ja) * | 2005-08-12 | 2014-07-09 | カンブリオス テクノロジーズ コーポレイション | ナノワイヤに基づく透明導電体 |
US7637415B2 (en) * | 2005-10-31 | 2009-12-29 | General Electric Company | Methods and apparatus for assembling a printed circuit board |
US20070105395A1 (en) * | 2005-11-04 | 2007-05-10 | Edward Kinzel | Laser functionalization and patterning of thick-film inks |
US20070117475A1 (en) * | 2005-11-23 | 2007-05-24 | Regents Of The University Of California | Prevention of Sn whisker growth for high reliability electronic devices |
US20070144305A1 (en) * | 2005-12-20 | 2007-06-28 | Jablonski Gregory A | Synthesis of Metallic Nanoparticle Dispersions |
JP4408432B2 (ja) * | 2005-12-26 | 2010-02-03 | 東京エレクトロン株式会社 | ダマシン配線の形成方法 |
KR100790863B1 (ko) * | 2005-12-28 | 2008-01-03 | 삼성전자주식회사 | 나노 와이어 제조 방법 |
JP4956997B2 (ja) * | 2006-01-05 | 2012-06-20 | 住友電気工業株式会社 | フラットケーブル |
CN101041898A (zh) * | 2006-02-23 | 2007-09-26 | 气体产品与化学公司 | 电子附着辅助的导电体的形成 |
JP2007321215A (ja) * | 2006-06-02 | 2007-12-13 | Nippon Shokubai Co Ltd | 金属ナノ粒子分散体および金属被膜 |
US7879131B2 (en) * | 2006-08-15 | 2011-02-01 | Applied Nanotech Holdings, Inc. | Metal encapsulation |
KR101082146B1 (ko) * | 2006-09-29 | 2011-11-09 | 주식회사 엘지화학 | 잉크젯 프린트용 잉크 및 상기 잉크에 사용되는 금속나노입자의 제조방법 |
US7622371B2 (en) * | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
TWI426531B (zh) * | 2006-10-12 | 2014-02-11 | Cambrios Technologies Corp | 以奈米線為主之透明導體及其應用 |
US10231344B2 (en) * | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
US7976733B2 (en) * | 2007-11-30 | 2011-07-12 | Xerox Corporation | Air stable copper nanoparticle ink and applications therefor |
US8422197B2 (en) * | 2009-07-15 | 2013-04-16 | Applied Nanotech Holdings, Inc. | Applying optical energy to nanoparticles to produce a specified nanostructure |
-
2009
- 2009-07-01 US US12/496,453 patent/US20100000762A1/en not_active Abandoned
- 2009-07-02 JP JP2011516873A patent/JP6337249B2/ja active Active
- 2009-07-02 KR KR1020117002542A patent/KR101610790B1/ko active IP Right Grant
- 2009-07-02 WO PCT/US2009/049510 patent/WO2010003056A1/en active Application Filing
- 2009-07-02 CN CN201510167222.7A patent/CN104812175B/zh active Active
- 2009-07-02 TW TW098122418A patent/TWI606460B/zh active
- 2009-07-02 CN CN200980125925.6A patent/CN102084435B/zh active Active
- 2009-07-02 EP EP09774505.3A patent/EP2301043B1/en not_active Not-in-force
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060057502A1 (en) * | 2004-07-23 | 2006-03-16 | Sumitomo Electric Industries, Ltd. | Method of forming a conductive wiring pattern by laser irradiation and a conductive wiring pattern |
CN101116149A (zh) * | 2004-09-14 | 2008-01-30 | 西玛耐诺技术以色列有限公司 | 可喷墨印刷的组合物 |
US20080020304A1 (en) * | 2004-11-24 | 2008-01-24 | Schroder Kurt A | Electrical, Plating And Catalytic Uses Of Metal Nanomaterial Compositions |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103428996A (zh) * | 2012-04-20 | 2013-12-04 | 古德里奇公司 | 印刷加热元件 |
CN104303242A (zh) * | 2012-07-03 | 2015-01-21 | 日本石原化学株式会社 | 导电膜形成方法与烧结助剂 |
CN104303242B (zh) * | 2012-07-03 | 2016-11-30 | 日本石原化学株式会社 | 导电膜形成方法与烧结助剂 |
CN105210156A (zh) * | 2013-05-14 | 2015-12-30 | 日本石原化学株式会社 | 铜微粒分散体、导电膜形成方法以及电路板 |
US11090858B2 (en) | 2014-03-25 | 2021-08-17 | Stratasys Ltd. | Method and system for fabricating cross-layer pattern |
US11904525B2 (en) | 2014-03-25 | 2024-02-20 | Stratasys Ltd. | Method and system for fabricating cross-layer pattern |
CN107614265A (zh) * | 2015-03-25 | 2018-01-19 | 斯特拉塔西斯公司 | 导电油墨原位烧结的方法和系统 |
US11191167B2 (en) | 2015-03-25 | 2021-11-30 | Stratasys Ltd. | Method and system for in situ sintering of conductive ink |
CN107533892A (zh) * | 2015-04-24 | 2018-01-02 | 斯坦雷电气株式会社 | 电阻器的制造方法、电阻器以及电子器件 |
CN107533892B (zh) * | 2015-04-24 | 2019-12-03 | 斯坦雷电气株式会社 | 电阻器的制造方法、电阻器以及电子器件 |
CN111106023A (zh) * | 2019-12-31 | 2020-05-05 | 广东芯聚能半导体有限公司 | 芯片表面连接方法、系统及功率模块系统 |
Also Published As
Publication number | Publication date |
---|---|
CN104812175B (zh) | 2019-03-19 |
JP2011527089A (ja) | 2011-10-20 |
TWI606460B (zh) | 2017-11-21 |
EP2301043A4 (en) | 2011-07-27 |
WO2010003056A1 (en) | 2010-01-07 |
KR101610790B1 (ko) | 2016-04-12 |
US20100000762A1 (en) | 2010-01-07 |
CN104812175A (zh) | 2015-07-29 |
KR20110053221A (ko) | 2011-05-19 |
TW201015587A (en) | 2010-04-16 |
EP2301043A1 (en) | 2011-03-30 |
CN102084435B (zh) | 2015-04-29 |
EP2301043B1 (en) | 2017-03-08 |
JP6337249B2 (ja) | 2018-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102084435B (zh) | 金属糊料和油墨 | |
US12096554B2 (en) | Hybrid nanosilver/liquid metal ink composition and uses thereof | |
JP4848674B2 (ja) | 樹脂金属複合導電材料およびその製造方法 | |
JP4362742B2 (ja) | ペースト状金属粒子組成物の固化方法、金属製部材の接合方法およびプリント配線板の製造方法 | |
TW392179B (en) | Anisotropic conductive composition | |
JP2010257880A (ja) | 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置 | |
KR20100043245A (ko) | 부착방법 및 이 방법을 사용하여 제조된 디바이스 | |
JP2013251256A (ja) | 低銀含有量ペースト組成物およびその低銀含有量ペースト組成物から導電性膜を製造する方法 | |
WO2006030665A1 (ja) | 半田ペーストおよびそれを用いた電子機器 | |
JP6677231B2 (ja) | 電子部品の接合方法および接合体の製造方法 | |
Kang et al. | Development of low cost, low temperature conductive adhesives | |
WO2020017065A1 (ja) | 組成物、接合材料、焼結体、接合体及び接合体の製造方法 | |
JP7015415B1 (ja) | 接合用組成物 | |
JP2004137345A (ja) | 導電性接着剤およびその製造方法 | |
KR102355782B1 (ko) | 접착력이 우수한 led 칩 본딩용 자가융착형 도전접속 조성물, 이를 포함하는 led 칩-회로기판 본딩 모듈 및 이의 제조방법 | |
KR102487799B1 (ko) | 임시 고정용 조성물 및 접합 구조체의 제조 방법 | |
JPH09219113A (ja) | 熱伝導用ペースト | |
JP6355949B2 (ja) | 金属接合材料 | |
WO2020017049A1 (ja) | 組成物、接合材料、焼結体、接合体及び接合体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190321 Address after: Hyogo Patentee after: Ishihara Chemical Co., Ltd. Address before: texas Co-patentee before: Ishihara Chemical Co., Ltd. Patentee before: Applied Nanotech Holdings Inc. |