CN102067343B - 用于制造光电子器件的方法以及光电子器件 - Google Patents

用于制造光电子器件的方法以及光电子器件 Download PDF

Info

Publication number
CN102067343B
CN102067343B CN2009801239731A CN200980123973A CN102067343B CN 102067343 B CN102067343 B CN 102067343B CN 2009801239731 A CN2009801239731 A CN 2009801239731A CN 200980123973 A CN200980123973 A CN 200980123973A CN 102067343 B CN102067343 B CN 102067343B
Authority
CN
China
Prior art keywords
layer
sequence
layer sequence
contact
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009801239731A
Other languages
English (en)
Chinese (zh)
Other versions
CN102067343A (zh
Inventor
帕特里克·罗德
马丁·斯特拉斯伯格
卡尔·英格尔
卢茨·赫佩尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102067343A publication Critical patent/CN102067343A/zh
Application granted granted Critical
Publication of CN102067343B publication Critical patent/CN102067343B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
CN2009801239731A 2008-06-27 2009-06-09 用于制造光电子器件的方法以及光电子器件 Active CN102067343B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008030584.7 2008-06-27
DE102008030584A DE102008030584A1 (de) 2008-06-27 2008-06-27 Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
PCT/DE2009/000810 WO2009155897A1 (de) 2008-06-27 2009-06-09 Verfahren zur herstellung eines optoelektronischen bauelementes und ein optoelektronisches bauelement

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201310119419.4A Division CN103280497B (zh) 2008-06-27 2009-06-09 用于制造光电子器件的方法以及光电子器件

Publications (2)

Publication Number Publication Date
CN102067343A CN102067343A (zh) 2011-05-18
CN102067343B true CN102067343B (zh) 2013-05-08

Family

ID=41211955

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2009801239731A Active CN102067343B (zh) 2008-06-27 2009-06-09 用于制造光电子器件的方法以及光电子器件
CN201310119419.4A Active CN103280497B (zh) 2008-06-27 2009-06-09 用于制造光电子器件的方法以及光电子器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201310119419.4A Active CN103280497B (zh) 2008-06-27 2009-06-09 用于制造光电子器件的方法以及光电子器件

Country Status (8)

Country Link
US (2) US8283191B2 (enExample)
EP (1) EP2289115B1 (enExample)
JP (1) JP5520942B2 (enExample)
KR (1) KR101629984B1 (enExample)
CN (2) CN102067343B (enExample)
DE (1) DE102008030584A1 (enExample)
TW (1) TWI390773B (enExample)
WO (1) WO2009155897A1 (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8471288B2 (en) * 2009-09-15 2013-06-25 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer
KR101039999B1 (ko) * 2010-02-08 2011-06-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
DE102010025320B4 (de) * 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR101252032B1 (ko) 2010-07-08 2013-04-10 삼성전자주식회사 반도체 발광소자 및 이의 제조방법
KR101761385B1 (ko) 2010-07-12 2017-08-04 엘지이노텍 주식회사 발광 소자
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
DE102010033137A1 (de) 2010-08-03 2012-02-09 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102010044986A1 (de) * 2010-09-10 2012-03-15 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
KR101114191B1 (ko) * 2010-09-17 2012-03-13 엘지이노텍 주식회사 발광소자
KR101761386B1 (ko) * 2010-10-06 2017-07-25 엘지이노텍 주식회사 발광 소자
KR101730152B1 (ko) * 2010-10-06 2017-04-25 엘지이노텍 주식회사 발광 소자
TWI532214B (zh) 2010-10-12 2016-05-01 Ｌｇ伊諾特股份有限公司 發光元件及其封裝
DE102011011140A1 (de) 2011-02-14 2012-08-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
JP5050109B2 (ja) 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
DE102011016302A1 (de) * 2011-04-07 2012-10-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
TWI434405B (zh) 2011-06-07 2014-04-11 國立交通大學 具有積體電路與發光二極體之異質整合結構及其製作方法
KR101880445B1 (ko) * 2011-07-14 2018-07-24 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛
CN108807626B (zh) * 2011-09-15 2020-02-21 晶元光电股份有限公司 发光元件
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
CN103050593A (zh) * 2011-10-17 2013-04-17 大连美明外延片科技有限公司 AlGaInP四元系发光二极管外延片及其生长方法
EP2597687B1 (en) * 2011-11-23 2016-02-03 Imec Method for producing a GaN LED device
KR102116152B1 (ko) * 2012-03-19 2020-05-28 루미리즈 홀딩 비.브이. 실리콘 기판 상에서 성장하는 발광 장치
JP5740350B2 (ja) * 2012-05-31 2015-06-24 株式会社東芝 半導体発光素子
WO2013182980A1 (en) * 2012-06-07 2013-12-12 Koninklijke Philips N.V. Chip scale light emitting device with metal pillars in a molding compound formed at wafer level
DE102012105176B4 (de) * 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
TW201401552A (zh) * 2012-06-19 2014-01-01 High Power Optoelectronics Inc 發光二極體的熱應力釋放結構
US8552457B1 (en) * 2012-08-07 2013-10-08 High Power Opto. Inc. Thermal stress releasing structure of a light-emitting diode
JP5881560B2 (ja) * 2012-08-30 2016-03-09 株式会社東芝 半導体発光装置及びその製造方法
US9082692B2 (en) * 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
DE102013103409A1 (de) * 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Modul
KR102188495B1 (ko) 2014-01-21 2020-12-08 삼성전자주식회사 반도체 발광소자의 제조 방법
JP5788046B2 (ja) * 2014-04-03 2015-09-30 株式会社東芝 半導体発光素子
EP3131129B1 (en) * 2014-04-07 2020-07-15 LG Innotek Co., Ltd. Light-emitting element
KR102163967B1 (ko) * 2014-04-16 2020-10-12 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102163956B1 (ko) * 2014-04-07 2020-10-12 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102153125B1 (ko) * 2014-06-11 2020-09-07 엘지이노텍 주식회사 발광소자 및 조명시스템
DE102014108373A1 (de) 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102015105509A1 (de) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015111046B9 (de) * 2015-07-08 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
KR102432015B1 (ko) 2015-11-09 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 자외선 발광소자 및 발광소자 패키지
CN105470359B (zh) * 2015-12-31 2018-05-08 天津三安光电有限公司 具有内嵌式电极结构的高功率led结构及其制备方法
DE102017103041B4 (de) 2017-02-15 2023-12-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement
US10892297B2 (en) 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US11527519B2 (en) 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US12100696B2 (en) 2017-11-27 2024-09-24 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
US11282981B2 (en) 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10748881B2 (en) 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10886327B2 (en) 2017-12-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11522006B2 (en) 2017-12-21 2022-12-06 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552061B2 (en) 2017-12-22 2023-01-10 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US11114499B2 (en) 2018-01-02 2021-09-07 Seoul Viosys Co., Ltd. Display device having light emitting stacked structure
US10784240B2 (en) 2018-01-03 2020-09-22 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
DE102019106521A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement
US11296266B2 (en) * 2019-11-26 2022-04-05 Facebook Technologies, Llc LED array having transparent substrate with conductive layer for enhanced current spread
CN120615172A (zh) * 2022-12-30 2025-09-09 上海联影医疗科技股份有限公司 用于探测辐射线的光子计数探测器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1577958A1 (en) * 2004-03-19 2005-09-21 LumiLeds Lighting U.S., LLC Photonic crystal light emitting device
DE102006008929A1 (de) * 2006-02-23 2007-08-30 Azzurro Semiconductors Ag Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121638A (en) * 1995-09-12 2000-09-19 Kabushiki Kaisha Toshiba Multi-layer structured nitride-based semiconductor devices
US5763941A (en) * 1995-10-24 1998-06-09 Tessera, Inc. Connection component with releasable leads
EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
US6465744B2 (en) * 1998-03-27 2002-10-15 Tessera, Inc. Graded metallic leads for connection to microelectronic elements
CN1292494C (zh) 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
DE10147886B4 (de) * 2001-09-28 2006-07-13 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit vergrabenem Kontakt und Herstellungsverfahren
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
US7115896B2 (en) * 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
US7230292B2 (en) * 2003-08-05 2007-06-12 Micron Technology, Inc. Stud electrode and process for making same
US8835937B2 (en) 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
DE102005016592A1 (de) 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
WO2006035664A1 (ja) * 2004-09-27 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体発光素子、その製造方法及びその実装方法、並びに発光装置
JP4826703B2 (ja) 2004-09-29 2011-11-30 サンケン電気株式会社 半導体素子の形成に使用するための板状基体
US20060124956A1 (en) 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
CN100372137C (zh) 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
US9406505B2 (en) 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
DE102006046237A1 (de) * 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
DE102006043400A1 (de) * 2006-09-15 2008-03-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US7697584B2 (en) * 2006-10-02 2010-04-13 Philips Lumileds Lighting Company, Llc Light emitting device including arrayed emitters defined by a photonic crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1577958A1 (en) * 2004-03-19 2005-09-21 LumiLeds Lighting U.S., LLC Photonic crystal light emitting device
DE102006008929A1 (de) * 2006-02-23 2007-08-30 Azzurro Semiconductors Ag Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JP2011525708A (ja) 2011-09-22
US20110104836A1 (en) 2011-05-05
JP5520942B2 (ja) 2014-06-11
CN102067343A (zh) 2011-05-18
US8956897B2 (en) 2015-02-17
US8283191B2 (en) 2012-10-09
CN103280497B (zh) 2016-08-03
DE102008030584A1 (de) 2009-12-31
KR101629984B1 (ko) 2016-06-13
CN103280497A (zh) 2013-09-04
TWI390773B (zh) 2013-03-21
EP2289115A1 (de) 2011-03-02
EP2289115B1 (de) 2017-08-09
WO2009155897A1 (de) 2009-12-30
US20120322186A1 (en) 2012-12-20
KR20110030542A (ko) 2011-03-23
TW201004000A (en) 2010-01-16

Similar Documents

Publication Publication Date Title
CN102067343B (zh) 用于制造光电子器件的方法以及光电子器件
EP2160772B1 (en) Semiconductor light emitting device
KR20210006373A (ko) 다이오드 매트릭스를 갖는 광전자 디바이스를 제조하기 위한 프로세스
CN102067346A (zh) 具有钝化层的半导体发光器件
JP2012500479A (ja) 両面不動態化を伴う半導体発光デバイスを製造するための方法
US8633508B2 (en) Semiconductor element and a production method therefor
US7772600B2 (en) Light emitting device having zener diode therein and method of fabricating the same
KR20090076163A (ko) 질화물 반도체 발광소자 제조방법 및 이에 의해 제조된질화물 반도체 발광소자
KR101072200B1 (ko) 발광소자 및 그 제조방법
CN101601142A (zh) 半导体芯片和用于制造半导体芯片的方法
KR101525913B1 (ko) 수직구조 발광다이오드 및 이의 제조방법
KR101072199B1 (ko) 발광소자 및 그 제조방법
KR101026059B1 (ko) 질화물 반도체 발광소자 및 그 제조방법
KR20090076164A (ko) 질화물 반도체 발광소자 제조방법 및 이에 의해 제조된질화물 반도체 발광소자
KR100730756B1 (ko) 제너 다이오드를 구비하는 발광소자 및 그것을 제조하는방법
US20230396038A1 (en) Manufacturing method of vertical cavity surface emitting laser
KR101681573B1 (ko) 발광소자의 제조방법
KR20080023820A (ko) 발광 다이오드의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant