CN102067346A - 具有钝化层的半导体发光器件 - Google Patents
具有钝化层的半导体发光器件 Download PDFInfo
- Publication number
- CN102067346A CN102067346A CN2008801307823A CN200880130782A CN102067346A CN 102067346 A CN102067346 A CN 102067346A CN 2008801307823 A CN2008801307823 A CN 2008801307823A CN 200880130782 A CN200880130782 A CN 200880130782A CN 102067346 A CN102067346 A CN 102067346A
- Authority
- CN
- China
- Prior art keywords
- layer
- passivation layer
- doping semiconductor
- semiconductor layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 20
- 238000010276 construction Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000012986 modification Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 GaN Chemical class 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000002308 calcification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2008/001491 WO2010020067A1 (en) | 2008-08-19 | 2008-08-19 | Semiconductor light-emitting device with passivation layer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102067346A true CN102067346A (zh) | 2011-05-18 |
CN102067346B CN102067346B (zh) | 2013-09-04 |
Family
ID=41706803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801307823A Active CN102067346B (zh) | 2008-08-19 | 2008-08-19 | 具有钝化层的半导体发光器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110147704A1 (zh) |
CN (1) | CN102067346B (zh) |
WO (1) | WO2010020067A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103247736A (zh) * | 2013-04-26 | 2013-08-14 | 东莞市福地电子材料有限公司 | 倒装led芯片焊接保护结构 |
CN107408603A (zh) * | 2015-01-06 | 2017-11-28 | 苹果公司 | 用于减少非辐射侧壁复合的led 结构 |
CN110943149A (zh) * | 2019-12-20 | 2020-03-31 | 佛山市国星半导体技术有限公司 | 一种抗水解红光led芯片及其制作方法 |
CN110993750A (zh) * | 2019-12-20 | 2020-04-10 | 深圳第三代半导体研究院 | 垂直型发光二极管及其制造方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011517851A (ja) * | 2008-03-25 | 2011-06-16 | ラティス パワー (チアンシ) コーポレイション | 両側パッシベーションを有する半導体発光デバイス |
US8318522B2 (en) * | 2009-12-15 | 2012-11-27 | Applied Materials, Inc. | Surface passivation techniques for chamber-split processing |
JP2012033689A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
US20120032212A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of light emitting diode sidewall passivation |
CN103050591B (zh) * | 2011-10-14 | 2016-04-20 | 中国科学院物理研究所 | 表面等离激元电致激发源及其制造方法 |
KR102080745B1 (ko) * | 2013-04-16 | 2020-04-14 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
US9601659B2 (en) | 2015-01-06 | 2017-03-21 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
US9865772B2 (en) | 2015-01-06 | 2018-01-09 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
KR102497281B1 (ko) * | 2015-08-31 | 2023-02-08 | 삼성디스플레이 주식회사 | 표시 장치, 헤드 마운트 표시 장치, 및 화상 표시 방법 |
CN105280764A (zh) * | 2015-09-18 | 2016-01-27 | 厦门市三安光电科技有限公司 | 一种氮化物发光二极管的制作方法 |
KR102412409B1 (ko) * | 2015-10-26 | 2022-06-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
JP7161096B2 (ja) * | 2018-06-29 | 2022-10-26 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6744196B1 (en) * | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
WO2004100224A2 (en) * | 2003-05-02 | 2004-11-18 | Picometrix, Llc | Pin photodetector |
US7244628B2 (en) * | 2003-05-22 | 2007-07-17 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor devices |
JP4295669B2 (ja) * | 2003-05-22 | 2009-07-15 | パナソニック株式会社 | 半導体素子の製造方法 |
US7122827B2 (en) * | 2003-10-15 | 2006-10-17 | General Electric Company | Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
US20050151136A1 (en) * | 2004-01-08 | 2005-07-14 | Heng Liu | Light emitting diode having conductive substrate and transparent emitting surface |
DE102004029412A1 (de) * | 2004-02-27 | 2005-10-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips |
JP2006156968A (ja) * | 2004-10-26 | 2006-06-15 | Doshisha Co Ltd | 発光素子 |
CN100399588C (zh) * | 2004-11-08 | 2008-07-02 | 晶元光电股份有限公司 | 点光源发光二极管结构及其制造方法 |
CN101005110A (zh) * | 2007-01-12 | 2007-07-25 | 中国科学院上海微系统与信息技术研究所 | 采用金属键合工艺实现氮化镓发光二极管垂直结构的方法 |
-
2008
- 2008-08-19 US US13/059,398 patent/US20110147704A1/en not_active Abandoned
- 2008-08-19 CN CN2008801307823A patent/CN102067346B/zh active Active
- 2008-08-19 WO PCT/CN2008/001491 patent/WO2010020067A1/en active Application Filing
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103247736A (zh) * | 2013-04-26 | 2013-08-14 | 东莞市福地电子材料有限公司 | 倒装led芯片焊接保护结构 |
CN107408603A (zh) * | 2015-01-06 | 2017-11-28 | 苹果公司 | 用于减少非辐射侧壁复合的led 结构 |
CN107408603B (zh) * | 2015-01-06 | 2020-04-14 | 苹果公司 | 用于减少非辐射侧壁复合的led结构 |
CN110943149A (zh) * | 2019-12-20 | 2020-03-31 | 佛山市国星半导体技术有限公司 | 一种抗水解红光led芯片及其制作方法 |
CN110993750A (zh) * | 2019-12-20 | 2020-04-10 | 深圳第三代半导体研究院 | 垂直型发光二极管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110147704A1 (en) | 2011-06-23 |
WO2010020067A1 (en) | 2010-02-25 |
CN102067346B (zh) | 2013-09-04 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20110518 Assignee: LATTICE POWER (CHANGZHOU) Corp. Assignor: LATTICE POWER (JIANGXI) Corp. Contract record no.: 2014360000242 Denomination of invention: Semiconductor light-emitting device with passivation layer and manufacture method thereof Granted publication date: 20130904 License type: Exclusive License Record date: 20141219 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: LATTICE POWER (CHANGZHOU) Corp. Assignor: LATTICE POWER (JIANGXI) Corp. Contract record no.: 2014360000242 Date of cancellation: 20220419 |
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EC01 | Cancellation of recordation of patent licensing contract | ||
CP01 | Change in the name or title of a patent holder |
Address after: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee before: LATTICE POWER (JIANGXI) Corp. |
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CP01 | Change in the name or title of a patent holder |