CN102046529B - 制备纯硅的方法和系统 - Google Patents

制备纯硅的方法和系统 Download PDF

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Publication number
CN102046529B
CN102046529B CN2009801197226A CN200980119722A CN102046529B CN 102046529 B CN102046529 B CN 102046529B CN 2009801197226 A CN2009801197226 A CN 2009801197226A CN 200980119722 A CN200980119722 A CN 200980119722A CN 102046529 B CN102046529 B CN 102046529B
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unit
trichlorosilane
silicon
reactor
disproportionation
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Chinese (zh)
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CN102046529A (zh
Inventor
C.施米德
A.佩特里克
J.哈恩
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Schmid Silicon Technology GmbH
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Schmid Silicon Technology GmbH
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/043—Monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10773—Halogenated silanes obtained by disproportionation and molecular rearrangement of halogenated silanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
CN2009801197226A 2008-03-31 2009-03-31 制备纯硅的方法和系统 Active CN102046529B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008017304.5 2008-03-31
DE102008017304A DE102008017304A1 (de) 2008-03-31 2008-03-31 Verfahren und Anlage zur Herstellung von Reinstsilizium
PCT/EP2009/002336 WO2009121558A2 (de) 2008-03-31 2009-03-31 Verfahren und anlage zur herstellung von reinstsilizium

Publications (2)

Publication Number Publication Date
CN102046529A CN102046529A (zh) 2011-05-04
CN102046529B true CN102046529B (zh) 2013-04-24

Family

ID=40900722

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801197226A Active CN102046529B (zh) 2008-03-31 2009-03-31 制备纯硅的方法和系统

Country Status (9)

Country Link
US (1) US20110262338A1 (enExample)
EP (1) EP2265546B1 (enExample)
JP (1) JP5632362B2 (enExample)
KR (1) KR20110015527A (enExample)
CN (1) CN102046529B (enExample)
CA (1) CA2719858C (enExample)
DE (1) DE102008017304A1 (enExample)
RU (1) RU2503616C2 (enExample)
WO (1) WO2009121558A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011128292A1 (de) 2010-04-13 2011-10-20 Schmid Silicon Technology Gmbh Herstellung von monokristallinen halbleiterwerkstoffen
DE102010021004A1 (de) 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
DE102010015354A1 (de) 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
DE102010034469A1 (de) * 2010-08-06 2012-02-09 Schmid Silicon Technology Gmbh Anlage zur Herstellung von Monosilan
DE102010044755A1 (de) * 2010-09-08 2012-03-08 Spawnt Private S.À.R.L. Verfahren zur Herstellung von Silicium hoher Reinheit
CN103260716B (zh) * 2010-12-20 2015-10-14 Memc电子材料有限公司 在涉及歧化操作的基本闭环方法中制备多晶硅
US9493360B2 (en) * 2011-11-14 2016-11-15 Sitec Gmbh Processes and systems for non-equilibrium trichlorosilane production
CN102807222B (zh) * 2012-08-17 2014-04-02 中国天辰工程有限公司 一种四氯化硅提纯方法
CN102951646A (zh) * 2012-11-22 2013-03-06 覃攀 硅烷的生产方法
CN103112860B (zh) * 2013-02-26 2015-09-02 天津大学 改良西门子法联产制备高纯硅烷的方法
CN103241743B (zh) * 2013-05-22 2015-07-22 黄国强 三氯氢硅直接歧化制备硅烷的反应精馏方法及设备
CN103936009B (zh) * 2014-04-21 2015-12-30 浙江中宁硅业有限公司 一种硅烷热分解生产纳米级高纯硅粉的装置及方法
RU2593634C2 (ru) * 2014-12-25 2016-08-10 федеральное государственное бюджетное образовательное учреждение высшего образования "Нижегородский государственный технический университет им. Р.Е. Алексеева" Способ глубокой очистки моносилана
DE102015209008A1 (de) * 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan
CN104828827B (zh) * 2015-05-15 2017-03-08 国电内蒙古晶阳能源有限公司 提纯三氯氢硅的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4676967A (en) * 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
WO2000039027A1 (de) * 1998-12-24 2000-07-06 Bayer Aktiengesellschaft Verfahren und anlage zur herstellung von silan
WO2002048034A1 (de) * 2000-12-11 2002-06-20 Solarworld Aktiengesellschaft Verfahren zur herstellung von reinstsilicium
WO2007039326A1 (en) * 2005-09-27 2007-04-12 Evonik Degussa Gmbh Process for producing monosilane

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3968199A (en) * 1974-02-25 1976-07-06 Union Carbide Corporation Process for making silane
GB2028289B (en) 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4340574A (en) * 1980-08-28 1982-07-20 Union Carbide Corporation Process for the production of ultrahigh purity silane with recycle from separation columns
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
FR2572312B1 (fr) 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4585643A (en) * 1985-05-31 1986-04-29 Union Carbide Corporation Process for preparing chlorosilanes from silicon and hydrogen chloride using an oxygen promoter
US5910295A (en) * 1997-11-10 1999-06-08 Memc Electronic Materials, Inc. Closed loop process for producing polycrystalline silicon and fumed silica
DE10044794A1 (de) * 2000-09-11 2002-04-04 Bayer Ag Verfahren zur Herstellung von Trichlorsilan
DE10057522B4 (de) * 2000-11-21 2009-04-16 Evonik Degussa Gmbh Verfahren zur Herstellung von Silanen
DE10062413A1 (de) * 2000-12-14 2002-07-04 Solarworld Ag Verfahren zur Herstellung von Trichlorsilan
RU2313485C2 (ru) * 2005-10-10 2007-12-27 Юрий Александрович Касаткин Способ получения моносилана

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4676967A (en) * 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
WO2000039027A1 (de) * 1998-12-24 2000-07-06 Bayer Aktiengesellschaft Verfahren und anlage zur herstellung von silan
WO2002048034A1 (de) * 2000-12-11 2002-06-20 Solarworld Aktiengesellschaft Verfahren zur herstellung von reinstsilicium
WO2007039326A1 (en) * 2005-09-27 2007-04-12 Evonik Degussa Gmbh Process for producing monosilane

Also Published As

Publication number Publication date
EP2265546A2 (de) 2010-12-29
JP2011516376A (ja) 2011-05-26
JP5632362B2 (ja) 2014-11-26
WO2009121558A3 (de) 2010-02-04
RU2010142993A (ru) 2012-05-10
CA2719858A1 (en) 2009-10-08
WO2009121558A2 (de) 2009-10-08
DE102008017304A1 (de) 2009-10-01
US20110262338A1 (en) 2011-10-27
RU2503616C2 (ru) 2014-01-10
WO2009121558A9 (de) 2010-04-29
CN102046529A (zh) 2011-05-04
EP2265546B1 (de) 2013-12-04
CA2719858C (en) 2016-06-21
KR20110015527A (ko) 2011-02-16

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