DE102008017304A1 - Verfahren und Anlage zur Herstellung von Reinstsilizium - Google Patents
Verfahren und Anlage zur Herstellung von Reinstsilizium Download PDFInfo
- Publication number
- DE102008017304A1 DE102008017304A1 DE102008017304A DE102008017304A DE102008017304A1 DE 102008017304 A1 DE102008017304 A1 DE 102008017304A1 DE 102008017304 A DE102008017304 A DE 102008017304A DE 102008017304 A DE102008017304 A DE 102008017304A DE 102008017304 A1 DE102008017304 A1 DE 102008017304A1
- Authority
- DE
- Germany
- Prior art keywords
- unit
- trichlorosilane
- silicon
- reactor
- monosilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 106
- 230000008569 process Effects 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 60
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 58
- 238000007323 disproportionation reaction Methods 0.000 claims abstract description 48
- 239000011541 reaction mixture Substances 0.000 claims abstract description 45
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000007038 hydrochlorination reaction Methods 0.000 claims abstract description 28
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000005049 silicon tetrachloride Substances 0.000 claims abstract description 27
- 238000000926 separation method Methods 0.000 claims abstract description 23
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 22
- 239000001257 hydrogen Substances 0.000 claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 12
- 239000006227 byproduct Substances 0.000 claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 9
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 20
- 239000003054 catalyst Substances 0.000 claims description 19
- 239000012159 carrier gas Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000000746 purification Methods 0.000 claims description 5
- 230000003197 catalytic effect Effects 0.000 claims description 4
- 125000003963 dichloro group Chemical group Cl* 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000000066 reactive distillation Methods 0.000 claims description 4
- 239000011856 silicon-based particle Substances 0.000 claims description 4
- 239000003957 anion exchange resin Substances 0.000 claims description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 2
- 239000000843 powder Substances 0.000 claims 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- 238000009835 boiling Methods 0.000 description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000005046 Chlorosilane Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000005108 dry cleaning Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000012432 intermediate storage Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical class C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000007700 distillative separation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
- C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10773—Halogenated silanes obtained by disproportionation and molecular rearrangement of halogenated silanes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008017304A DE102008017304A1 (de) | 2008-03-31 | 2008-03-31 | Verfahren und Anlage zur Herstellung von Reinstsilizium |
| KR1020107024197A KR20110015527A (ko) | 2008-03-31 | 2009-03-31 | 순수 실리콘의 제조방법 및 제조시스템 |
| US12/935,093 US20110262338A1 (en) | 2008-03-31 | 2009-03-31 | Method and system for the production of pure silicon |
| JP2011502281A JP5632362B2 (ja) | 2008-03-31 | 2009-03-31 | 純シリコンを製造するための方法およびシステム |
| CN2009801197226A CN102046529B (zh) | 2008-03-31 | 2009-03-31 | 制备纯硅的方法和系统 |
| EP09727868.3A EP2265546B1 (de) | 2008-03-31 | 2009-03-31 | Verfahren und anlage zur herstellung von reinstsilizium |
| RU2010142993/05A RU2503616C2 (ru) | 2008-03-31 | 2009-03-31 | Способ и система для получения чистого кремния |
| PCT/EP2009/002336 WO2009121558A2 (de) | 2008-03-31 | 2009-03-31 | Verfahren und anlage zur herstellung von reinstsilizium |
| CA2719858A CA2719858C (en) | 2008-03-31 | 2009-03-31 | Method and system for the production of pure silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008017304A DE102008017304A1 (de) | 2008-03-31 | 2008-03-31 | Verfahren und Anlage zur Herstellung von Reinstsilizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102008017304A1 true DE102008017304A1 (de) | 2009-10-01 |
Family
ID=40900722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102008017304A Withdrawn DE102008017304A1 (de) | 2008-03-31 | 2008-03-31 | Verfahren und Anlage zur Herstellung von Reinstsilizium |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20110262338A1 (enExample) |
| EP (1) | EP2265546B1 (enExample) |
| JP (1) | JP5632362B2 (enExample) |
| KR (1) | KR20110015527A (enExample) |
| CN (1) | CN102046529B (enExample) |
| CA (1) | CA2719858C (enExample) |
| DE (1) | DE102008017304A1 (enExample) |
| RU (1) | RU2503616C2 (enExample) |
| WO (1) | WO2009121558A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010034469A1 (de) * | 2010-08-06 | 2012-02-09 | Schmid Silicon Technology Gmbh | Anlage zur Herstellung von Monosilan |
| WO2012032129A1 (de) * | 2010-09-08 | 2012-03-15 | Spawnt Private S.À.R.L. | Verfahren zur herstellung von silicium hoher reinheit |
| DE102015209008A1 (de) * | 2015-05-15 | 2016-11-17 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Zersetzung von Monosilan |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011128292A1 (de) | 2010-04-13 | 2011-10-20 | Schmid Silicon Technology Gmbh | Herstellung von monokristallinen halbleiterwerkstoffen |
| DE102010021004A1 (de) | 2010-05-14 | 2011-11-17 | Schmid Silicon Technology Gmbh | Herstellung von monokristallinen Halbleiterwerkstoffen |
| DE102010015354A1 (de) | 2010-04-13 | 2011-10-13 | Schmid Silicon Technology Gmbh | Herstellung eines kristallinen Halbleiterwerkstoffs |
| CN103260716B (zh) * | 2010-12-20 | 2015-10-14 | Memc电子材料有限公司 | 在涉及歧化操作的基本闭环方法中制备多晶硅 |
| US9493360B2 (en) * | 2011-11-14 | 2016-11-15 | Sitec Gmbh | Processes and systems for non-equilibrium trichlorosilane production |
| CN102807222B (zh) * | 2012-08-17 | 2014-04-02 | 中国天辰工程有限公司 | 一种四氯化硅提纯方法 |
| CN102951646A (zh) * | 2012-11-22 | 2013-03-06 | 覃攀 | 硅烷的生产方法 |
| CN103112860B (zh) * | 2013-02-26 | 2015-09-02 | 天津大学 | 改良西门子法联产制备高纯硅烷的方法 |
| CN103241743B (zh) * | 2013-05-22 | 2015-07-22 | 黄国强 | 三氯氢硅直接歧化制备硅烷的反应精馏方法及设备 |
| CN103936009B (zh) * | 2014-04-21 | 2015-12-30 | 浙江中宁硅业有限公司 | 一种硅烷热分解生产纳米级高纯硅粉的装置及方法 |
| RU2593634C2 (ru) * | 2014-12-25 | 2016-08-10 | федеральное государственное бюджетное образовательное учреждение высшего образования "Нижегородский государственный технический университет им. Р.Е. Алексеева" | Способ глубокой очистки моносилана |
| CN104828827B (zh) * | 2015-05-15 | 2017-03-08 | 国电内蒙古晶阳能源有限公司 | 提纯三氯氢硅的方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2507864A1 (de) * | 1974-02-25 | 1975-08-28 | Union Carbide Corp | Verfahren zur herstellung von silan |
| DE2919086A1 (de) | 1978-08-18 | 1980-03-06 | Schumacher Co J C | Verfahren zur herstellung von polykristallinem silizium |
| US4340574A (en) * | 1980-08-28 | 1982-07-20 | Union Carbide Corporation | Process for the production of ultrahigh purity silane with recycle from separation columns |
| DE3311650A1 (de) | 1982-03-31 | 1983-10-13 | Union Carbide Corp., 06817 Danbury, Conn. | Verfahren zur herstellung von hoch reinem silan sowie hoch reinem polykristallinem und einkristallinem silicium fuer solarzellen und halbleiter |
| EP0181803A1 (fr) | 1984-10-30 | 1986-05-21 | Rhone-Poulenc Chimie | Procédé de fabrication de barreaux de silcium ultra-pur |
| DE19860146A1 (de) | 1998-12-24 | 2000-06-29 | Bayer Ag | Verfahren und Anlage zur Herstellung von Silan |
| DE10057522A1 (de) * | 2000-11-21 | 2002-05-23 | Solarworld Ag | Verfahren zur Herstellung von Silanen |
| DE10061682A1 (de) * | 2000-12-11 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von Reinstsilicium |
| DE102005046105B3 (de) | 2005-09-27 | 2007-04-26 | Degussa Gmbh | Verfahren zur Herstellung von Monosilan |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| US4585643A (en) * | 1985-05-31 | 1986-04-29 | Union Carbide Corporation | Process for preparing chlorosilanes from silicon and hydrogen chloride using an oxygen promoter |
| US5910295A (en) * | 1997-11-10 | 1999-06-08 | Memc Electronic Materials, Inc. | Closed loop process for producing polycrystalline silicon and fumed silica |
| DE10044794A1 (de) * | 2000-09-11 | 2002-04-04 | Bayer Ag | Verfahren zur Herstellung von Trichlorsilan |
| DE10062413A1 (de) * | 2000-12-14 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von Trichlorsilan |
| RU2313485C2 (ru) * | 2005-10-10 | 2007-12-27 | Юрий Александрович Касаткин | Способ получения моносилана |
-
2008
- 2008-03-31 DE DE102008017304A patent/DE102008017304A1/de not_active Withdrawn
-
2009
- 2009-03-31 CA CA2719858A patent/CA2719858C/en not_active Expired - Fee Related
- 2009-03-31 EP EP09727868.3A patent/EP2265546B1/de active Active
- 2009-03-31 JP JP2011502281A patent/JP5632362B2/ja not_active Expired - Fee Related
- 2009-03-31 RU RU2010142993/05A patent/RU2503616C2/ru not_active IP Right Cessation
- 2009-03-31 CN CN2009801197226A patent/CN102046529B/zh active Active
- 2009-03-31 US US12/935,093 patent/US20110262338A1/en not_active Abandoned
- 2009-03-31 KR KR1020107024197A patent/KR20110015527A/ko not_active Ceased
- 2009-03-31 WO PCT/EP2009/002336 patent/WO2009121558A2/de not_active Ceased
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2507864A1 (de) * | 1974-02-25 | 1975-08-28 | Union Carbide Corp | Verfahren zur herstellung von silan |
| DE2919086A1 (de) | 1978-08-18 | 1980-03-06 | Schumacher Co J C | Verfahren zur herstellung von polykristallinem silizium |
| US4340574A (en) * | 1980-08-28 | 1982-07-20 | Union Carbide Corporation | Process for the production of ultrahigh purity silane with recycle from separation columns |
| DE3311650A1 (de) | 1982-03-31 | 1983-10-13 | Union Carbide Corp., 06817 Danbury, Conn. | Verfahren zur herstellung von hoch reinem silan sowie hoch reinem polykristallinem und einkristallinem silicium fuer solarzellen und halbleiter |
| DE3311650C2 (enExample) * | 1982-03-31 | 1987-11-05 | Union Carbide Corp., Danbury, Conn., Us | |
| EP0181803A1 (fr) | 1984-10-30 | 1986-05-21 | Rhone-Poulenc Chimie | Procédé de fabrication de barreaux de silcium ultra-pur |
| DE19860146A1 (de) | 1998-12-24 | 2000-06-29 | Bayer Ag | Verfahren und Anlage zur Herstellung von Silan |
| DE10057522A1 (de) * | 2000-11-21 | 2002-05-23 | Solarworld Ag | Verfahren zur Herstellung von Silanen |
| DE10061682A1 (de) * | 2000-12-11 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von Reinstsilicium |
| DE102005046105B3 (de) | 2005-09-27 | 2007-04-26 | Degussa Gmbh | Verfahren zur Herstellung von Monosilan |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010034469A1 (de) * | 2010-08-06 | 2012-02-09 | Schmid Silicon Technology Gmbh | Anlage zur Herstellung von Monosilan |
| WO2012032129A1 (de) * | 2010-09-08 | 2012-03-15 | Spawnt Private S.À.R.L. | Verfahren zur herstellung von silicium hoher reinheit |
| DE102015209008A1 (de) * | 2015-05-15 | 2016-11-17 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Zersetzung von Monosilan |
| WO2016184638A1 (de) * | 2015-05-15 | 2016-11-24 | Schmid Silicon Technology Gmbh | Verfahren und anlage zur zersetzung von monosilan |
| CN107635919A (zh) * | 2015-05-15 | 2018-01-26 | 施米德硅晶片科技有限责任公司 | 用于分解甲硅烷的过程和设备 |
| US10414660B2 (en) | 2015-05-15 | 2019-09-17 | Schmid Silicon Technology Gmbh | Process and plant that decomposes monosilane |
| CN107635919B (zh) * | 2015-05-15 | 2020-11-20 | 施米德硅晶片科技有限责任公司 | 用于分解甲硅烷的过程和设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2265546A2 (de) | 2010-12-29 |
| JP2011516376A (ja) | 2011-05-26 |
| JP5632362B2 (ja) | 2014-11-26 |
| WO2009121558A3 (de) | 2010-02-04 |
| RU2010142993A (ru) | 2012-05-10 |
| CA2719858A1 (en) | 2009-10-08 |
| WO2009121558A2 (de) | 2009-10-08 |
| US20110262338A1 (en) | 2011-10-27 |
| RU2503616C2 (ru) | 2014-01-10 |
| CN102046529B (zh) | 2013-04-24 |
| WO2009121558A9 (de) | 2010-04-29 |
| CN102046529A (zh) | 2011-05-04 |
| EP2265546B1 (de) | 2013-12-04 |
| CA2719858C (en) | 2016-06-21 |
| KR20110015527A (ko) | 2011-02-16 |
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