CN102037094B - 稳定的高速率的硅浆料 - Google Patents

稳定的高速率的硅浆料 Download PDF

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Publication number
CN102037094B
CN102037094B CN200980118582.0A CN200980118582A CN102037094B CN 102037094 B CN102037094 B CN 102037094B CN 200980118582 A CN200980118582 A CN 200980118582A CN 102037094 B CN102037094 B CN 102037094B
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China
Prior art keywords
weight
polishing composition
silicon
polishing
salt
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CN200980118582.0A
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Chinese (zh)
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CN102037094A (zh
Inventor
迈克尔·怀特
杰弗里·基利兰
拉蒙·琼斯
阿利西亚·沃尔特斯
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CMC Materials LLC
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Cabot Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN200980118582.0A 2008-05-23 2009-05-07 稳定的高速率的硅浆料 Active CN102037094B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/126,739 US8017524B2 (en) 2008-05-23 2008-05-23 Stable, high rate silicon slurry
US12/126,739 2008-05-23
PCT/US2009/002846 WO2009142692A2 (en) 2008-05-23 2009-05-07 Stable, high rate silicon slurry

Publications (2)

Publication Number Publication Date
CN102037094A CN102037094A (zh) 2011-04-27
CN102037094B true CN102037094B (zh) 2013-07-31

Family

ID=41340714

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980118582.0A Active CN102037094B (zh) 2008-05-23 2009-05-07 稳定的高速率的硅浆料

Country Status (8)

Country Link
US (1) US8017524B2 (https=)
EP (1) EP2297263B1 (https=)
JP (1) JP5600100B2 (https=)
KR (1) KR101297900B1 (https=)
CN (1) CN102037094B (https=)
MY (1) MY148323A (https=)
TW (1) TWI398506B (https=)
WO (1) WO2009142692A2 (https=)

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US8795548B1 (en) * 2013-04-11 2014-08-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Silicon wafer polishing composition and related methods
US8801959B1 (en) * 2013-04-11 2014-08-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable silicon wafer polishing composition and related methods
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JP6357356B2 (ja) * 2014-06-09 2018-07-11 株式会社フジミインコーポレーテッド 研磨用組成物
CN104263249B (zh) * 2014-09-26 2016-06-29 深圳市力合材料有限公司 一种硅溶胶的处理方法
CN104650740B (zh) * 2014-12-10 2017-07-14 深圳市力合材料有限公司 一种可实现快速稳定抛光的抛光液
CN105802509B (zh) * 2014-12-29 2018-10-26 安集微电子（上海）有限公司 一种组合物在阻挡层抛光中的应用
WO2017051770A1 (ja) * 2015-09-25 2017-03-30 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
US9534148B1 (en) 2015-12-21 2017-01-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
US20190185713A1 (en) * 2017-12-14 2019-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp slurry compositions containing silica with trimethylsulfoxonium cations
JP7157651B2 (ja) * 2017-12-27 2022-10-20 ニッタ・デュポン株式会社 研磨用組成物
KR102003441B1 (ko) * 2018-06-12 2019-07-24 주식회사 동진쎄미켐 화학-기계적 연마 슬러리 조성물
US11274230B1 (en) * 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US11472984B1 (en) 2021-09-27 2022-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of enhancing the removal rate of polysilicon
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物

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US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
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Also Published As

Publication number Publication date
US20090291559A1 (en) 2009-11-26
WO2009142692A2 (en) 2009-11-26
JP5600100B2 (ja) 2014-10-01
MY148323A (en) 2013-03-29
JP2011523207A (ja) 2011-08-04
TWI398506B (zh) 2013-06-11
KR101297900B1 (ko) 2013-08-22
EP2297263B1 (en) 2017-03-22
EP2297263A4 (en) 2011-11-30
TW201009058A (en) 2010-03-01
KR20110030478A (ko) 2011-03-23
EP2297263A2 (en) 2011-03-23
WO2009142692A3 (en) 2010-02-18
US8017524B2 (en) 2011-09-13
CN102037094A (zh) 2011-04-27

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Address after: Illinois, USA

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Patentee before: CABOT MICROELECTRONICS Corp.

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Patentee before: CMC Materials Co.,Ltd.