CN101990709A - 层叠的功率转换器结构和方法 - Google Patents

层叠的功率转换器结构和方法 Download PDF

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CN101990709A
CN101990709A CN2009801129271A CN200980112927A CN101990709A CN 101990709 A CN101990709 A CN 101990709A CN 2009801129271 A CN2009801129271 A CN 2009801129271A CN 200980112927 A CN200980112927 A CN 200980112927A CN 101990709 A CN101990709 A CN 101990709A
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semiconductor element
attached
anchor clamps
conductive layer
welding disc
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CN101990709B (zh
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D·B·贝尔
F·赫伯特
N·凯尔科
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Intersil Corp
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Intersil Inc
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Abstract

一种功率转换器可包括输出电路，该输出电路具有可在单个管芯(“功率管芯”)上形成的高侧器件和低侧器件。该功率转换器可进一步包括在不同管芯上形成的控制器集成电路(IC)，该不同管芯可电耦合至功率管芯并与功率管芯共同封装。功率管芯可附连至引线框架的管芯焊盘，且控制器IC管芯可附连至第一管芯的有源表面，以使第一管芯插入控制器IC管芯与管芯焊盘之间。

Description

层叠的功率转换器结构和方法
相关申请的交叉参照
本申请要求2008年12月23日提交的美国临时专利申请S/N 61/140,610以及2009年3月20日提交的美国临时专利申请S/N 61/162,232的优先权，以上申请的公开内容通过引用整体结合于此。
发明领域
本发明涉及半导体器件领域，更具体涉及功率转换和控制结构及其形成方法。
发明背景
提供例如用于使用直流—直流(DC-DC)转换器改变直流功率之类的功率转换器功能的半导体器件被用于各种功能。例如，可转换来自一个或多个电池的输入直流功率以提供比输入直流电压高或低的电压的一个或多个功率输出。使用集成电路(IC)实现功率转换功能通常要求与电压输入(V输入)电耦合的直流高侧晶体管、与接地端电耦合的直流低侧晶体管以及控制电路。例如，在同步步进降压器件(即“同步降压”转换器)中，通过交替地启用高侧器件和低侧器件来执行功率转换以降低电压，其中由控制电路在高效率和通过器件的低功率损耗下执行开关和控制功能。
需要可在高功率密度(例如高电压和高电流)下工作的功率转换器电路，尤其是能在合理成本下高效地转换高密度功率的器件。高功率密度下的一个挑战是输出电路系统的大小随着转换器的额定电压和电流增大而增大。已经使用了控制器电路、高侧器件以及低侧器件的不同实现方式，其中每种实现方式均有它自身的优点和缺点。
如图1所描绘，共同封装器件10可包括一个半导体管芯12上的用于提供控制器IC的控制电路系统、第二管芯14上的高侧器件以及第三管芯16上的低侧器件。图2中描绘了图1器件的电路图，图2还描绘了控制器电路电路12、与V输入(VIN)电耦合的高侧MOSFET 14、以及与器件电源接地端(PGND)电耦合的低侧MOSFET 16。这些器件可具有如所描绘的标准封装引脚输出和引脚分配。在不同管芯上形成控制器、低侧以及高侧器件会产生与控制器IC上的互连寄生效应有关的问题，这些问题会不利地影响器件性能。这可能源自接合线中固有的寄生电感、电磁干扰(EMI)、振铃现象、效率损失等。诸如铜板(或夹具)接合或带式连接之类的较高质量连接可用于减少寄生效应，但这增加了组装成本。此外，共同封装的标准垂直MOSFET会产生具有与输出节点串联的寄生电感的电路。由寄生电感引起的问题在本领域存在已久。虽然可将电容器连接至诸如输入(V输入)和接地端之类的输出端子以补偿连接至这些节点的电感的不利影响，但不能将电容连接至诸如输出(V输出，也称为相节点或开关节点)之类的内部节点。
此外，例如，由于多个管芯附连步骤(此示例中为三个管芯)的原因，以及需要附加空间用于分开毗邻管芯以容纳管芯附连填料、管芯放置公差以及管芯转动公差——该附加空间降低了可实现的功率密度，所以包含三个不同管芯的封装具有较高制造成本。为减少毗邻管芯之间的电干扰，将每个管芯放置在不同的管芯焊盘上。
共同封装器件的示例包括具有共同封装的高侧MOSFET和外部肖特基二极管的不同步降压器、具有共同封装的高侧和低侧MOSFET的不同步降压器、具有共同封装的高侧和低侧MOSFET的同步降压器、具有共同封装的MOSFET的升压转换器、以及具有公共封装的MOSFET和肖特基二极管的升压转换器。
还可将分立器件分离地安装于印刷电路板。在该解决方案中，包含控制器电路系统的第一封装管芯与包含高侧MOSFET的第二封装管芯以及包含低侧MOSFET的第三封装协同使用。这三个封装安装在印刷电路板上。然而，因为管芯和必须制造和处理的独立封装的数量至少增至三倍，这会增加封装成本，且在印刷电路板上使用的面积也增大，从而导致电路板大小增大。
存在对其中器件处理成本和器件覆盖区域被减小、同时提供具有足够器件电气特性以及低寄生电感和电容的功率转换器件的功率转换器的需求。
附图简述
包括在说明书中且构成说明书一部分的附图示出了本发明的多个实施例，且与说明书一起用于解释本发明的原理。在附图中：
图1是常规功率转换器件的仰视图；
图2是包括输出功率器件的电压转换器件的示意图；
图3是可用于本发明的实施例的半导体管芯的部分横截面；
图4是本发明的一个实施例的平面俯视图；
图5、6和8-10是用于实施本发明的实施例的第一方法的平面俯视图，且图7是该方法的部分横截面；
图11-15是本发明的其他实施例的平面图；以及
图16-18是用于本发明的实施例的引线框架和“夹具框架”结构的平面图。
应当注意的是，已简化了附图的某些细节，并绘制成便于理解本发明实施例，而非保持严格的结构准确性、细节以及比例。
具体实施方式
将详细参照本发明的实施例(示例性实施例)，在附图中示出了实施例的示例。在可能时，将在所有附图中使用相同的附图标记来指示相同或类似的部件。
诸如直流—直流转换器之类的常规功率转换器件的实施例可典型地包括如上所述共同封装在单个器件中的三个管芯，该器件具有以诸如图1所描绘的标准配置排列的输入/输出引线。
2009年5月21日提交的题为“基于平面器件、结构以及方法的功率转换器的共同封装手段(Co-Packaging Approach for Power Converters Based on Planar Devices，Structure and Method)”的美国专利申请S/N 12/470,229中公开了包含在单个管芯(称为“功率管芯”)上的高侧功率输出晶体管(高侧器件)和低侧功率输出晶体管(低侧器件)的器件设计。该申请与本发明一起被共同转让并通过引用整体结合在本文中，该申请描述了将功率管芯与具有不同管芯上的控制器电路系统的控制器IC一起使用，该控制器IC可单独封装并放置在诸如印刷电路板(PCB)的支承衬底上，或可作为被共同封装为诸如密封半导体器件的单个半导体器件的两个不同管芯。
图3描绘了来自参照申请的可与本器件一起使用的示例性管芯。图3的结构可包括电压转换器功率输出器件，该器件具有在单个半导体管芯上形成的高侧功率器件MOSFET 30和低侧功率器件MOSFET 32。可以是金属的导电层具有第一部分34，该第一部分34连接至高侧MOSFET的漏极区，且与电压输入(V输入)电耦合。导电层的第二部分36连接至低侧MOSFET的源极区，且与接地端电耦合。可进一步配置该器件使半导体衬底38通过功率管芯的后面将其输出提供给功率转换器的电感器。因此该功率管芯可通过背面提供器件开关节点。图3(以及下述图7)描绘具有平行的“条形”栅极指部的功率器件。几何形状的变型是可能的，诸如功率器件领域的普通技术人员所公知的“闭孔型”几何形状。闭孔型几何形状指的是具有包围源极和主体触点的栅极指部的结构。这些室可以是正方形、矩形、六角形等。
2009年5月26日提交的题为“使用沟槽栅极低侧和LDMOS高侧MOSFET的单管芯输出功率级、结构以及方法(Single Die Output Power Stage Using Trench-Gate Low-Side and LDMOS High-Side MOSFETs，Structure and Method)”的美国专利申请S/N 12/471,911中描述了包含单个管芯上的高侧MOSFET和低侧MOSFET的另一器件，该申请与本申请一起被共同转让并通过引用整体结合于此。在本申请中详细描述的器件也可与本发明一起使用。
本发明的实施例可包括除参考文献中描述的配置之外的多种配置。实现功率转换功能可包括使用包括与电压输入(V输入)电耦合(并提供开关)的一个或多个直流高侧开关的第一半导体管芯，以及与接地端电耦合(并提供开关)的一个或多个直流低侧开关。该器件还可包括第二半导体管芯，该第二半导体管芯包括用于在适当时刻控制高侧和低侧开关的选通(和开关切换)的控制电路。高侧和低侧开关(即功率器件)可包括诸如场效应晶体管(FET)或双极晶体管之类的各种类型的一个或多个晶体管。如本文所使用，“晶体管”是包括栅极、源极以及漏极(MOSFET晶体管)或基极、发射极以及集电极(双极晶体管)的电子器件，其中通过向晶体管器件施加阈值电压可使流过晶体管的电流在选定时刻导通和截止。也如本文所使用，“控制器IC”是包括可用于在适当时刻控制高侧和低侧开关的选通(和开关切换)的控制电路系统的半导体管芯。虽然使用晶体管提供本发明的一个实施例，但如果使用了具有足够低电阻和高速度的MEMS器件，则功率器件可包括微机电开关(MEMS)。取决于应用，还可使用其他开关器件。
本发明的各个实施例也可具有多个输入/输出引脚配置。虽然本发明的各实施例不受特定引脚配置限制，除非这样指明，但在一个示例性实施例中，可使用图4器件40的引脚分配配置。应当注意，为便于本发明的描述，图4-6和8-10是器件顶面的平面图，而图1是器件底面的平面图。
图5-10中描绘了用于提供诸如步进降压(“同步降压”)器件之类的电压转换器的本发明的第一实施例。同步降压转换器使用NMOS高侧和NMOS低侧器件实现高性能，而升压转换器可使用低侧NMOS，具有与输出负载串联连接的肖特基二极管。不同步降压器可使用高侧NMOS或PMOS，其中肖特基二极管或多个二极管用作低侧器件以代替FET。图5描绘诸如四方扁平无引线(QFN)引线框架的引线框架，其包括多个引线50和管芯焊盘52。第一半导体管芯54可以是单片管芯，其包括与图3器件相似的高侧和低侧功率输出器件，以及提供开关节点VSWH的半导体衬底，该第一半导体管芯54通过例如导电环氧树脂或其他导电管芯附连技术附连至管芯焊盘。在以上参考的两个共同待审申请中描述了一致的器件。在该实施例中，引线56直接连接至引线框架管芯焊盘，以提供与包括管芯焊盘的连续金属部分整体形成的“融合引线”。参照图4，这些引线56是该器件的VSWH引脚输出，且将通过功率管芯的背面电耦合至功率管芯VSWH。未在该简化图中描绘其他引线框架结构，诸如连接杆，将管芯焊盘附连至引线框架、引线框架轨、以及与作为引线框架条的一部分同时组装用于其他器件的附加管芯焊盘。
在形成与图5相似的结构之后，在第一半导体管芯上形成包括第一部分60和第二部分62的金属化层。也可在管芯54组装到管芯焊盘52上之前形成提供中间导电平面的该金属化，例如在管芯制造期间形成。如图6所描绘，形成金属化60使之接触导电层的部分34，该部分连接至高侧MOSFET的漏极区。导体34与电压输入(V输入)电耦合，从而使金属60与V输入耦合。形成金属化62以接触导电层的部分36，该部分连接至低侧MOSFET的源极区。导体36与电源接地端地(PGND)电耦合，从而使金属62与接地端耦合。虽然如图7所描绘的分别形成金属60、62作为接触下层34、36的覆盖层，但也可构想使用通过电介质层到下层34、36的一个或多个导电触点的方案。
在形成与图6所描绘相似的结构之后，具有控制器电路系统的控制器IC管芯80的后面附连至金属化62，如图8所描绘。如果使用了导电管芯附连粘合剂，则控制器IC的后面(如果暴露，则为半导体衬底)可通过金属62和导体36与器件接地端(PGND)电耦合，以提供确保控制器IC芯片80的正确控制和操作所必需的连接。
随后，可使用接合线90将控制器IC 80上的接合焊盘(未单独描绘出)电连接(电耦合)至各个位置，诸如电连接至引线框架的引线50，如图9中所描绘。接合线91可将控制器IC 80上的接合焊盘连接至焊盘区92，该焊盘区92利用触点连接至低侧器件的栅电极。另一接合线93可将控制器IC 80上的接合焊盘连接至焊盘区94，该焊盘区94利用触点连接至高侧器件的栅电极。另一接合线95可将控制器IC上的接合焊盘连接至焊盘区96，该焊盘区96可利用触点耦合至功率管芯的衬底，以提供到开关节点VSWH的电连接。
然后，例如，可利用如图10所描绘的夹具(夹板)使信号V输入和PGND附连至适当的引线框架引线。可形成，例如，由铜形成的第一导电夹具100，以将金属60电耦合至多个第一引线框架引线，且可形成夹具102以将金属62电耦合至多个第二引线。因为金属60通过层34与功率管芯V输入电耦合，所以通过夹具100在功率管芯V输入(以及通过接合线连接90的控制器IC)与引线框架引线之间建立适当的V输入连接。此外，因为金属62通过层36与功率管芯PGND电耦合，所以通过夹具102在功率管芯PGND(以及通过接合线连接90的控制器IC)与引线框架引线之间建立适当的PGND连接。描绘V输入夹具100和PGND夹具102的图10可与图4的信号引脚输出进行比较。在一个实施例中，可分别使晶体管有源区上方的每个夹具100、102与金属60、62之间的接触区最大化。
可执行诸如钝化、密封的形成、从引线框架条分离等等之类的对图10器件的各种其他处理来提供诸如驱动器MOS(DrMOS)器件之类的完工器件。应注意，可按照除所描述次序之外的次序来进行各个处理步骤，所描述次序详细给出了用于提供完工半导体器件的一个示例性实施例。
因此，根据如所述的实施例形成的器件可产生出将输出功率器件(高侧和低侧)和控制器IC封装到单个半导体封装中的器件。因为控制器IC管芯的外围完全在输出管芯的外围内，所以可提供具有比常规器件小的覆盖区域的封装。此外，该器件可包括单个管芯焊盘，该单个管芯焊盘同时提供高侧输出功率器件、低侧输出功率器件以及控制器IC的功能。所描述的器件比可比拟的常规器件包括更少管芯，且提供无功能损失和等效功率电平。此外，消除了高侧器件的源极与输出节点(开关节点VSWH)之间的寄生电感。该器件结构与夹具(夹板)铜接合技术相容，该技术能降低组装成本、电阻以及寄生电容。
图11中描绘了另一实施例。在该实施例中，夹板110比图10的夹板102覆盖更大面积的金属层36，更具体而言，覆盖控制器IC 80下方的区域。因此，在附连控制器IC 80之前以及引线接合之前，可分别将夹板100、110附连至金属层34、36的表面。该实施例可在控制器IC 80与功率管芯40之间提供附加屏蔽，这能减少功率管芯与控制器IC之间的电气干扰。此外，焊盘92、94可镀有NiAu，以减少或消除在引线接合之前进行的各种组装工艺期间的氧化。
图12中描绘了另一实施例。在该实施例中，例如，引线框架的引线与接合线120连接，而不是与图10实施例的夹具(夹板)连接。
图13描绘包括引线框架管芯焊盘130和引线框架引线132的实施例。在该实施例中，引线132与管芯焊盘是非整体地形成的，但也可构想具有该安排的实施例。图13进一步描绘与图7和8的结构60相似、且相似地连接至高侧MOSFET的漏极区、还与电压输入(V输入)电耦合的导电层的第一部分134。该导电层的第二部分136与图7和8的结构62相似，且相似地连接至低侧MOSFET的源极区，还与接地端电耦合。可进一步配置该器件使半导体衬底将其输出提供给功率转换器的电感器，以使功率管芯的背面可提供器件开关节点。焊盘138为高侧器件的栅极提供电触点，且焊盘140为低侧器件的栅极提供电触点。图13进一步描绘控制器IC管芯80、将该控制器IC上的接合焊盘连接至引线框架的引线132的第一接合线142、以及将导电层部分134、136分别连接至引线框架的引线以提供V输入和PGND的第二接合线144。
如图所描绘，控制器IC直接位于高侧功率器件和低侧功率器件二者上方，从而导电层部分134、136二者直接插入功率管芯54与控制器IC 80之间。因此控制器IC 80桥接导电层部分134、136二者之间的间隙。如果控制器IC的大小与功率管芯的大小相比需要将控制器IC放置在功率管芯的低侧和高侧器件二者上方，则上述安排是必须的。因而，将控制器IC连接至导电层部分134、136的管芯附连粘合剂是不导电的，以防止电源—接地端短路。在该实施例中，可通过具有到高侧栅极的接触的焊盘区138向控制器IC提供到高侧器件的栅极的连接，且可通过具有到低侧栅极的接触的焊盘区140向控制器IC提供到低侧器件的栅极的连接。
图14描绘其中控制器IC足够小而仅覆盖低侧输出功率器件、且不桥接导电层部分134、136之间的间隙的实施例。因而，将控制器IC连接至低侧器件的金属136的管芯附连粘合剂可以是不导电的或导电的。如果导电，则控制器IC的背面将与PGND电耦合。
构想了如图15中所描绘的实施例，其中控制器IC 80如图13一样桥接导体部分134与136之间的间隙，且使用了夹具150和152。夹具150将导电层部分134电耦合至V输入引线，且夹具152将导电层部分136电耦合至PGND引线。因此，V输入引线(图4中的引脚输出8-20)通过夹具150、导电层部分134(与图7中的导体60相似)以及导电层34电耦合至V输入(输出器件功率输入)(图7)。PGND引线(图4中的引脚输出22-39)通过夹具152、导电层部分136(与图7中的导体62相似)以及导电层34电耦合至PGND(输出器件接地端)(图7)。在该实施例中，将控制器IC连接至导体层部分134、136的管芯附连粘合剂是不导电的。然而，导热材料可改善离开功率管芯的热传导。
在各个实施例中，用于控制器IC的管芯附连可以是在封装组装期间分配或在切割之前涂敷在控制器IC管芯背面上的环氧化物。对于小于约1.0mm的封装厚度，可使控制器IC和功率管芯减薄至约150微米(6密耳)或更薄。可通过从控制器IC到高侧器件顶部上的金属和低侧器件上的金属的“下接合”来直接建立到控制器IC的V输入和PGND连接。为使引线接合回路高度最小，可使用诸如焊球缝合(stitch on ball)或逆向接合之类的标准接合技术或其他技术。为减少组装期间的氧化风险，这些焊盘可，例如，利用化学镀工序镀有NiAu。如果将铜夹具用于各个实施例，则在放置控制器IC管芯之前将其附连。
可将控制器IC 80放置在相比于其他节点较安静的电路节点上。通过使控制器IC与开关节点(VSWH)分离，可减少噪声和其他干扰以产生优于常规器件的改善电气性能。
图16-18中描绘了用于为使用框架系统的特定器件形成匹配引线框架和导电夹具的系统的实施例。在该实施例中，引线框架和“夹具框架”是针对图10的管芯设计的。图16描绘包括四个管芯焊盘52、与图5中所描述相似的引线50、56、引线框架轨160、以及将管芯焊盘52附连至引线框架轨160的连接杆162。在图16中，特别设计这些夹具使之附连至引线164、166，且附连至半导体管芯的有源表面(电路侧)。引线56与管芯焊盘52整体地形成，以从功率管芯的背面提供VSWH。
图17描绘包括轨170、连接杆172以及夹具174和176的夹具框架结构，这些零件可与所描绘的形状不同。夹具174与图10的夹具100相似，且将附连至引线164且附连至半导体管芯的有源表面。夹具176与图10的夹具102相似，且将附连至引线166。因此，每对夹具174和176适于附连至单个半导体管芯的有源表面(即用于附连至电路侧)。连接杆172将各个夹具附连至夹具框架轨170。
图18描绘图17结构与图16结构的对齐，其将图10的夹具100、102的对齐与引线50和管芯焊盘52匹配。在制造期间，使每个夹具的一部分弯曲，以使每个夹具的第一部分180可接触引线框架的引线56，且每个夹具的第二部分182可以不同的程度地附连至功率管芯的顶部，或附连至形成于功率管芯上方的导电层。
在使用夹具框架系统时，可利用导电粘合剂将诸如功率管芯之类的管芯附连至图16的每个管芯焊盘52，以使每个管芯焊盘与设置在连接至该管芯焊盘的管芯背面的VSWH电耦合。在每个管芯上形成覆盖导电层(它也可在管芯附连之前形成)，其第一部分连接至提供V输入的金属层，且其第二部分连接至提供PGND的金属层。然后图17的夹具174、176可利用焊料、导电胶等附连至覆盖导电层和每个夹具的引线，同时附连至夹具框架轨170。然后控制器IC可附连至每个功率管芯上的一个或多个夹具。如果夹具的一部分未插入控制器IC与功率管芯之间，则可在夹具附连之前附连控制器IC。可在组装过程期间的适当时刻执行任何引线接合。可将附连至图16的引线框架和图17的夹具框架的器件密封在模制化合物中，然后可例如利用锯子使每个经组装器件与引线框架和夹具框架分离，该锯子将夹具和引线框架引线从轨160、170分离以产生完工的半导体器件。在另一实施例中，例如，可利用拾取和放置装置将夹具与轨分离并放置在功率管芯上。
因此，本发明的实施例可包括各种所描述的元件。在一个实施例中，提供具有管芯焊盘的引线框架，且利用导电管芯附连粘合剂将第一半导体管芯附连至该管芯焊盘。该第一管芯可包括在第一半导体管芯上和中形成的功率转换器高侧和低侧器件。可以是半导体衬底的第一管芯的背面可通过导电粘合剂将该器件的开关节点提供给管芯焊盘。与管芯焊盘整体形成且与其电耦合的引线框架引线因此可与该器件的开关节点耦合以提供VSWH信号。可在第一半导体管芯上形成导电层，该导电层包括覆盖高侧器件的第一部分和在低侧器件上形成的与该第一部分电绝缘的第二部分。导电层的第一部分可电耦合至高侧器件的漏极，该高侧器件的漏极也与器件电压输入(V输入)电耦合。导电层的第二部分可与低侧器件的源极电耦合，该低侧器件的源极也与器件接地端(PGND)电耦合。第一夹具可与导电层的第一部分电耦合，且与一个或多个引线框架引线电耦合，以使V输入与其所附连的引线框架引线电耦合。第二夹具可与导电层的第二部分电耦合，且与一个或多个引线框架引线电耦合，以使PGND与其所附连的引线框架引线电耦合。可利用导电或不导电粘合剂使其上和其中形成有控制器电路系统的第二半导体管芯附连至导电层的第二部分(它可提供PGND)。因此，第一半导体管芯直接置于第二半导体管芯与管芯焊盘之间，且第二管芯附连至第一管芯的有源表面。在另一实施例中，可利用不导电管芯附连粘合剂使控制器IC附连至导电层的第一部分和导电层的第二部分二者。在又一实施例中，可利用导电或不导电管芯附连粘合剂使控制器IC附连至第一夹具或第二夹具。可将第一半导体管芯(功率管芯)和控制器IC密封在塑性树脂中，或以其他方式封装以提供具有两个半导体管芯和单个管芯焊盘的功率转换器。与包括单个封装中的三个或多个管芯或使用提供相似功能的多个密封器件的常规器件相比，该器件可具有降低的成本、简化的组件处理以及改善的电气特性。
尽管陈述本发明的宽泛范围的数值范围和参数是近似值，仍然尽可能精确地报告在特定示例中陈述的数值。然而，任何数值固有地包含必然来自它们相应的试验测量中存在的标准差的某些误差。而且，应当理解本文中公开的所有范围为包含其中所包含的任何和所有的子范围。例如，“小于10”的范围可包括在最小值0和最大值10之间(含0和10)的任何和所有子范围，即具有等于或大于0的最小值和等于或小于10的最大值的任何和所有子范围，例如1到5。在某些情况下，该参数所述的数值可取负值。在这种情况下，陈述为“小于10”的示例值范围可取负值，例如-1、-2、-3、-10、-20、-30等。
虽然已经关于一个或多个实现示出了本发明，但是可对所示示例作出变化和/或修改，而不背离所附权利要求的精神和范围。此外，虽然已经关于若干实现中的仅一个实现公开了本发明的具体特征，但在任何给定或具体功能需要和有利时，可将这样的特征与另一实现的一个或多个其它特征组合。此外，就术语“包括”、“包含”、“具有”、“有”、“带有”或它们的变型在详细描述和权利要求中使用而言，这些术语旨在以与术语“包括”相似的方式包括。术语“至少一个”用于表示可选择所列出项目中的一个或多个。此外，在本文的讨论和权利要求中，相对于两种材料所使用的术语“在……之上”、一个在另一个“之上”表示两种材料之间存在至少一些接触，而“在……上方”表示这些材料接近但可能具有一种或多种附加的插入材料，以使接触是可能的但不是必需。如本文所使用，“在……之上”或“在……上方”均不表示任何方向性。术语“共形”描述一种涂层材料，其中下层材料的角受到共形材料的保护。术语“约”表示可在某种程度上改变所列出的值，只要该改变不会导致过程或结构与所示实施例的不一致。最后，“示例性”表示用该描述作为示例，而不是表示它是最理想的。通过考虑说明书和本文所公开的发明的实施，本发明的其它实施例对于本领域技术人员将变得显而易见。旨在认为说明书和示例仅仅是示例性的，而由所附权利要求指明本发明的真实范围和精神。

Claims (18)

1.一种用于形成功率转换器的方法，包括：
提供包括高侧功率输出开关和低侧功率输出开关的第一半导体管芯；
在所述高侧功率输出开关上方形成第一导电层部分，所述第一导电层部分与所述高侧功率输出开关的漏极以及器件电压输入(V输入)电耦合；
在所述低侧功率输出开关上方形成第二导电层部分，所述第二导电层部分与所述低侧功率输出开关的源极以及器件接地端(PGND)电耦合；
将所述第一半导体管芯附连至管芯焊盘；以及
将包括控制器电路系统的第二半导体管芯附连在所述第一半导体管芯上方，以使所述第一半导体管芯置于所述第二半导体管芯与所述管芯焊盘之间。
2.如权利要求1所述的方法，其特征在于，还包括：
提供所述第一半导体管芯包括具有与所述高侧功率输出开关的开关节点(VSWH)电耦合的半导体衬底的器件；以及
在所述第一半导体管芯与所述管芯焊盘附连期间使用导电管芯附连粘合剂，以将所述第一半导体管芯的半导体衬底与所述管芯焊盘电耦合，以使与所述管芯焊盘整体形成的引线框架引线与所述高侧功率输出开关的VSWH电耦合。
3.如权利要求1所述的方法，其特征在于，进一步包括将所述第二管芯通过引线接合至与所述第一管芯的衬底电耦合的接合焊盘，以将开关节点(VSWH)从所述第一半导体管芯提供给所述第二半导体管芯。
4.如权利要求1所述的方法，其特征在于，还包括：
将第一夹具附连至所述第一导电层部分且附连至至少一个第一引线框架引线，以将V输入提供给所述至少一个引线框架引线；以及
将第二夹具附连至所述第二导电层部分且附连至至少一个第二引线框架引线，以将PGND提供给所述至少一个第二引线框架引线。
5.如权利要求4所述的方法，其特征在于，还包括：
附连所述第一夹具和附连所述第二夹具包括提供包括第一夹具和第二夹具的夹具框架，第一夹具和第二夹具分别通过至少一个连接杆附连至至少一个夹具框架轨；
将所述第一夹具附连至所述第一导电层部分和所述至少一个第一引线；
将所述第二夹具附连至所述第二导电层部分和所述至少一个第二引线；以及
从所述至少一个夹具框架轨和所述至少一个连接杆去除所述第一夹具和所述第二夹具。
6.如权利要求1所述的方法，其特征在于，还包括：
提供具有与所述管芯焊盘整体形成的至少一个融合引线的引线框架；以及
使用导电管芯附连粘合剂将所述第一管芯附连至所述管芯焊盘，且将所述融合引线与开关节点(VSWH)电耦合，
其中VSWH由所述第一管芯的衬底通过所述导电管芯附连粘合剂提供给所述管芯焊盘。
7.一种功率转换器件，包括：
包括高侧功率输出开关和低侧功率输出开关的第一半导体管芯，其中所述第一半导体管芯附连至引线框架管芯焊盘；
与所述高侧功率输出开关的漏极和器件电压输入(V输入)电耦合的第一导电层部分；
与所述低侧功率输出开关的源极和器件接地端(PGND)电耦合的第二导电层部分；
覆盖在所述第一半导体管芯上方的其上包括控制器电路系统的第二半导体管芯，从而所述第一半导体管芯置于所述第二半导体管芯与所述引线框架管芯焊盘之间。
8.如权利要求7所述的功率转换器件，其特征在于，还包括：
所述第一半导体管芯的半导体衬底，用于提供所述高侧功率输出开关的开关节点(VSWH)；
导电管芯附连粘合剂，用于将所述第一半导体管芯的所述半导体衬底附连至所述管芯焊盘；
与所述管芯焊盘整体形成的至少一个引线框架引线，用于通过所述第一管芯的半导体衬底、所述管芯附连粘合剂以及所述管芯焊盘从所述高侧功率输出开关接收VSWH。
9.如权利要求8所述的功率转换器件，其特征在于，还包括：
电连接至所述第一半导体管芯的所述衬底的接合焊盘；以及
将所述第二半导体管芯电耦合至所述接合焊盘以向所述第二半导体管芯提供VSWH的引线接合。
10.如权利要求7所述的功率转换器件，其特征在于，还包括：
附连至所述第一导电层部分以及所述引线框架的至少一个第一引线的第一导电夹具，从而所述引线框架的所述至少一个第一引线与V输入电耦合；以及
附连至所述第二导电层部分以及所述引线框架的至少一个第二引线的第二导电夹具，从而所述引线框架的所述至少一个第二引线与PGND电耦合。
11.一种半导体器件，包括：
包括高侧功率输出晶体管和低侧功率输出晶体管的第一半导体管芯，其中所述第一半导体管芯附连至引线框架管芯焊盘；
与所述高侧功率输出晶体管的漏极和器件电压输入(V输入)电耦合的第一导电层部分；
与所述低侧功率输出晶体管的源极和器件接地端(PGND)电耦合的第二导电层部分；
所述第一半导体管芯的半导体衬底，用于提供所述高侧功率输出晶体管的开关节点(VSWH)；
导电管芯附连粘合剂，用于将所述第一半导体管芯的所述半导体衬底附连至所述管芯焊盘；
与所述管芯焊盘整体形成的至少一个引线框架引线，用于通过所述第一管芯的半导体衬底、所述管芯附连粘合剂以及所述管芯焊盘从所述高侧功率输出晶体管接收VSWH；
覆盖在所述第一半导体管芯上方的其上包括控制器电路系统的第二半导体管芯，从而所述第一半导体管芯置于所述第二半导体管芯与所述引线框架管芯焊盘之间；
电耦合至所述第一管芯的所述半导体衬底的接合焊盘；
将所述第二半导体管芯电耦合至所述接合焊盘以向所述第二半导体管芯提供VSWH的引线接合；
附连至所述第一导电层部分以及所述引线框架的至少一个第一引线的第一导电夹具，从而所述引线框架的所述至少一个第一引线与V输入电耦合；以及
附连至所述第二导电层部分以及所述引线框架的至少一个第二引线的第二导电夹具，从而所述引线框架的所述至少一个第二引线与PGND电耦合。
12.一种用于形成半导体器件的装置，包括：
至少第一和第二夹具框架轨；
用于附连至半导体管芯的有源表面的第一夹具，其中所述第一夹具附连至所述第一夹具框架轨；以及
用于附连至半导体管芯的有源表面的第二夹具，其中所述第二夹具附连至所述第二夹具框架轨。
13.如权利要求12所述的装置，其特征在于，所述第一夹具与所述第二夹具形状不同，且所述第一和第二夹具适于附连至单个半导体管芯的有源表面。
14.一种功率转换器件，包括：
包括高侧功率输出晶体管和低侧功率输出晶体管的第一半导体管芯；
在所述第一半导体管芯上方的金属层；以及
覆盖所述第一半导体管芯的其上包括控制器电路系统的第二半导体管芯，
其中所述金属层具有直接置于所述第一半导体管芯与所述第二半导体管芯之间的至少一部分。
15.如权利要求14所述的功率转换器件，其特征在于，所述金属层是中间导电面，包括：
与器件电压输入(V输入)电耦合的第一金属层部分；以及
与器件接地端(PGND)电耦合的第二金属层部分。
16.如权利要求15所述的功率转换器件，其特征在于，所述第二半导体管芯直接覆盖所述第一金属层部分和所述第二金属层部分二者。
17.如权利要求15所述的功率转换器件，其特征在于，所述第二半导体管芯直接覆盖所述第二金属层部分，且不直接覆盖所述第一金属层部分。
18.如权利要求15所述的功率转换器件，其特征在于，还包括管芯焊盘，其中所述第一半导体管芯置于所述管芯焊盘与所述第二半导体管芯之间。
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