CN101985746A - 能够控制反应室内的排放流体流动路径的化学气相沉积装置 - Google Patents
能够控制反应室内的排放流体流动路径的化学气相沉积装置 Download PDFInfo
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Abstract
本发明公开了一种能够控制反应室内的排放流体的流动路径的化学气相沉积装置,将所述化学气相沉积装置装配为不必凭借重新设计和重新制造该装置即可控制基座和腔室的内表面之间的气体排放路径的宽度。化学气相沉积装置具有:腔室;位于腔室内部的并且上面能加载基板的基座;向基板注入处理气的喷头;以及引导单元,该引导单元可拆卸地安装在腔室的内部以引导处理气,从而使从喷头注入的处理气通过腔室内形成的腔室孔得以排放。
Description
相关申请的交叉引用
本申请要求2009年7月28日递交至韩国知识产权局的韩国专利申请第10-2009-0068831号的优先权,本文通过引用并入其全部内容。
技术领域
本发明主要涉及用于形成薄层的半导体制造装置,更具体而言,涉及化学气相沉积装置。
背景技术
金属有机化学气相沉积(MOCVD)是一种通过例如在受热反应器中使基板与III族气体和V族气体反应而将薄层沉积在基板上的技术。使用MOCVD,能够以精确地控制每个薄层的厚度或化学组成的能力来形成构建薄层。因而,MOCVD广泛地用于半导体制造工艺。
在反应器的处理室中形成薄层之后,将处理室中的剩余气体排出处理室。当大气温度降至低于所排放的剩余气体的蒸发温度时,这可能导致在处理室中形成不合需要的颗粒。所述不合需要的颗粒可能落到处理室中的基板上,并且其将在获得具有均匀的层质量或者均匀的层厚度分布的薄层方面造成困难。同时,这些不合需要的颗粒能够附着到气体排放路径上,引起保温效应。这种保温效应是指在处理室的预定温度和实际温度之间产生的温度差,而该温度差将对薄层的质量产生负面影响。
此外,当由于例如在气体排放路径中产生的涡流而没有实现均匀的处理气流动分布时,甚至会产生更多不合需要的颗粒。引起涡流产生的一个潜在的原因是基座和邻近的处理室壁之间的气体排放路径的宽度不合适。
在传统的MOCVD装置中,基座和处理室壁之间的气体排放路径的宽度由设计固定,以至于不能控制气体排放路径的宽度。因而,当处理室内的处理气的流体流动分布不合适时,可能必须重新设计和制造该设备。
发明内容
本发明提供一种化学气相沉积装置,所述装置具有能控制在基座和处理室壁之间的气体排放路径的宽度的构造,而无须重新设计和制造该化学气相沉积装置。
根据本发明的一个方面,化学气相沉积装置包括:腔室;位于腔室内部的并且上面加载基板的基座;向基板注入处理气的喷头;以及引导单元,所述引导单元可拆卸地安装在腔室内部以引导处理气,从而使从喷头注入的处理气通过腔室内形成的腔孔得以排放。
根据本发明的另一方面,在化学气相沉积装置中使用引导单元,所述化学气相沉积装置包括腔室、位于腔室内部的并且其上加载基板的基座以及向基板注入处理气的喷头,并且该引导单元可拆卸地安装在腔室内部以引导处理气,从而使从喷头注入的处理气通过腔室内形成的腔孔得以排放。
本发明的另一方面提供了一种用于控制化学气相沉积装置的排放路径的方法,所述化学气相沉积装置包括腔室、位于腔室内部的并且其上加载基板的基座以及向基板注入处理气的喷头,该方法包括安装将处理气引导至形成在腔室中的腔孔内的引导单元以便控制处理气所经过的排放路径的宽度。
附图说明
通过参考相关附图对本发明的示例性实施方式进行具体描述而使本发明的上述和其它特征及优点变得更加显而易见,其中:
图1为示出安装在腔室内部的可更换引导单元的本发明的实施方式的化学气相沉积装置的横截面图;
图2为本发明的实施方式的化学气相沉积装置的横截面图,所述化学气相沉积装置中设置有为了基本消除腔室内的不规则空气流的引导单元;
图3为本发明的实施方式的化学气相沉积装置的横截面图,所述化学气相沉积装置中安置有为了基本消除腔室内的不规则空气流的辅助板;
图4~图5为示出打开腔室以更换其中的引导单元的本发明实施方式的化学气相沉积装置的横截面图;
图6为本发明实施方式的化学气相沉积装置的横截面图,该图示出在腔室中人工地、通过自动机械或者通过其它方式的自动程序更换的不同尺寸引导单元;和
图7为本发明实施方式的用于控制化学气相沉积装置的气体排放路径的方法的流程图。
具体实施方式
现在将参考显示本发明的示例性实施方式的附图来更加充分的描述本发明。然而,本发明将体现为不同的形式并且不应解释为限制于本文所述的实施方式。相反,提供这些实施方式是为使本公开完整和彻底并且向本领域技术人员完整地表达本发明的范围。在附图中,为了清楚地说明,层和区域的尺寸可能被夸大。附图中相同的参考数字代表相同的元件。
图1为本发明的实施方式的化学气相沉积装置的横截面图,其示出了置于包含第一腔室100和第二腔室200的化学气相沉积装置内的引导单元610(可更换,下文将参考图5~图7进行更详细的描述)。本实施方式可应用于其它各种化学气相沉积装置以及通用MOCVD装置。
如图1所述,第一腔室100和第二腔室200彼此连接以形成化学气相沉积装置。该化学气相沉积装置将主处理气G1提供至第二腔室200中,所述主处理气G1可以为任何预定数量的处理气的组合,并且图1被设计为提供由两种类型的处理气构成的主处理气G1。第一腔室100形成有提供第一处理气的第一进气口101和提供第二处理气的第二进气口(图1的横截面图中未示出)。如在图1中示出的第一进气口101的情况,第一和第二进气口可穿过第一腔室100的上表面而形成。
可穿过第一腔室100的侧表面形成惰性气体进气口102以将惰性气体G2供给到第二腔室200中。
如图1中所示,贯穿第二腔室200的侧表面的多个腔孔201将在基板S上形成薄层后残留的主处理气G1和惰性气体G2排出。
为了在第二腔室200中形成薄层,喷头300向基板S提供主处理气G1。本发明实施方式的主处理气G1包含第一处理气和第二处理气,通过第一和第二处理气之间反应而获得的产物沉积在基板S上以形成薄层。根据本发明的实施例,第一处理气可以是包含III族元素的气体,第二处理气可以是包含V族元素的气体。
第一配气空间310接收通过第一进气口101导入的第一处理气并且将其分配到多个第一供气管330并进入第二腔室200内。第二配气空间320接收通过第二进气口(图1中未示出)导入的第二处理气并且将其分配到多个第二供气管340并进入第二腔室200内。第一和第二配气空间310、320可以形成在喷头300内。混合通过第一供气管330提供的第一处理气和通过第二供气管340提供的第二处理气以形成处理气G1。
惰性气体注入单元400将惰性气体G2注入第二处理室200中以加快处理气G1的排放。惰性气体注入单元400可形成为环或环状物形状,该环或环状物在其更接近第一腔室100的侧壁的外圆周处环绕喷头300。惰性气体注入单元400具有多个形成在其下表面上的贯穿孔。通过惰性进气口102将惰性气体G2导入到惰性气体室401,并且通过所述多个贯穿孔可以将惰性气体G2向下注入到第二腔室200中。
基板S装载在基座500的上表面,使得可以在该基板的上表面形成薄层。可以在基座500内提供加热器(未示出)。
为了形成具有均匀厚度的薄层,可以在基座500下方提供能够旋转基座500的旋转件501。在如图1所示的本发明的实施方式中,基板S和基座500作为单个整体而旋转。
引导单元610放置在第二腔室200的内部以将薄膜形成后剩余的处理气G1和惰性气体G2引导进入到腔孔201中,残余气体G1、G2通过所述腔孔排出第二腔室。引导单元610的各部分包括形成有第一壁部孔615的第一壁部611、曲部612和第二壁部613。
如图1所示,第一壁部611更靠近第二腔室200的侧壁,第二壁部613通过曲部612连接到第一壁部611。第二壁部613以d1的距离与第一壁部611隔开。引导单元610可由石英制成并且可类似管状。第二壁部613以预定距离与基座500隔开以避免可能由旋转基座500引起的摩擦。然而,优选的是,将第二侧壁613和旋转基座500彼此之间的距离保持得尽可能小以使应该排出第二腔室200的残余气体不会被导入第二壁部613和基座500之间的间隙中。
第一壁部611的第一壁部孔615可以与第二腔室200的腔室孔201对准以为排放的残余气体提供连续的路径。
当第二壁部613和第一壁部611之间的距离d1非常大时(见图1),由于在第二腔室200内形成的不规则流体流(涡流),在基板S上形成薄层之后残留的由处理气G1和惰性气体G2组成的剩余气体可能不会顺利地排出第二腔室200。由于该不规则流体流,从处理气沉淀的颗粒可能过多地附着于排放路径上,而附着于排放路径上的颗粒是引起保温效应的一个成因。这可能导致反应空间800的温度高于预设温度并且将对所形成薄膜的质量产生负面影响。
图2为本发明的实施方式的化学气相沉积装置的横截面图,所述化学气相沉积装置中设置有为了基本消除腔室200内的不规则空气流的引导单元620。
如图2所示,安装引导单元620,使得第二壁部623以距离d2(d1>d2)与第一壁部621隔开,并因而在反应空间800内不产生不规则流体流。可以将第一壁部621设置成圆筒状,从而形成与基座500的同心圆环。
通过观察化学气相沉积装置的特定部分上的强颗粒积聚的区域、通过基于第二腔室200内的反应空间800的形状进行计算机模拟,或通过使用传感器检测反应空间800内部的流体流,可以确定在第二腔室200内部是否形成涡流。
引导单元620将薄膜形成后剩余的主处理气G1和惰性气体G2引导至多个第一壁部孔625中。于是,流过第一壁部孔625的流动气体G1和G2穿过多个腔室孔201并经由延伸部分624排出第二腔室200。
图3为本发明的实施方式的化学气相沉积装置的横截面图,所述化学气相沉积装置中安置有为了基本消除腔室200内的不规则空气流的辅助板700。
通过在第二腔室200内放置辅助板700,流体排出路径的宽度(即,第二壁613和辅助板700之间的宽度)进一步缩窄至d3(d1>d2>d3)。穿过辅助板主体701的一部分形成辅助板孔703。辅助板孔703可以在面对第一壁部孔615的位置形成。可以在辅助板主体701的侧表面中设置连接辅助板孔702和第一壁部孔615的连接部702。
图4~图5为本发明实施方式的化学气相沉积装置的横截面图,其中显示了为更换引导单元610而将第一腔室100与第二腔室分隔开。
现在参考图4~图5,当在反应空间800内检测到不规则流体流时,为了使用其它类型的引导单元(例如图2中示出的620)代替引导单元610或者为了插入辅助板(例如图3中示出的700)以缩窄残余处理气排出第二腔室的排放路径的宽度,可以打开第一腔室100以从第二腔室200人工地、通过自动机械或者通过其它自动程序移除引导单元610。
图6为化学气相沉积装置的横截面图,该图示出以人工方式、自动机械或者以其它方式的自动程序安装在腔室200中的引导单元620,该引导单元620具有不同于图4-5中示出的引导单元610的尺寸。
如图6所示,具有以d2间隔开的第一壁部621和第二壁部623的引导单元620可以安装在基座500和第二腔室200的侧壁之间的第二腔室200中。然后可将被隔开的第一腔室100与第二腔室200重新装配在一起。
图7为本发明实施方式的用于控制化学气相沉积装置的气体排放路径的方法的流程图。
在运行化学气相沉积装置后,通过上述的各种方法在步骤S10检查是否在第二腔室200中形成涡流。例如,通过分离第一腔室100和第二腔室200并且观察引导单元的一个或多个特定部分上的强颗粒积聚区域、通过基于反应空间的形状执行计算机模拟或者通过使用传感器检测反应空间的流体流,可以确定在第二腔室内是否形成涡流。
当确定在步骤S10产生了涡流时,在步骤S11将第一腔室100与第二腔室200分离。
接着,在步骤S12,使用较小尺寸的或者使排放路径的宽度变窄的另一引导单元替代第二腔室200中的引导单元,通过该排放路径将处理气流出第二腔室200。作为另一种选择,在步骤S12,可插入辅助板以实现比由现有的引导单元提供的宽度更窄的排放路径的宽度,通过该排放路径将处理气流出第二腔室200。执行步骤S12的原因是确定了处理气排放路径的宽度大至足以产生涡流。
在步骤S13,重装配第一和第二腔室。
接着,在步骤S14,恢复化学气相沉积装置的运行。
此后在步骤S10,再次检查第二腔室200以确定第二腔室200内是否产生涡流。当检测到涡流时,重复步骤S11~S14。当没有检测到涡流时,在步骤S20,对比预设值检查被排放的处理气的压力或处理气的排放速率,以确定排放压力或排放速率是否较高。可以通过使用压力传感器等来检测排放压力或者排放速率。
当在步骤S20确定排放压力或排放速率高于预设值时,在步骤S21,将第一腔室100从第二腔室200分离。
接着,在步骤S22,使用较大尺寸的或者使排放路径的宽度变宽的另一引导单元替代第二腔室200中的引导单元,处理气通过该排放路径流出第二腔室200。执行步骤S22的原因是由于排放路径的宽度小于最优宽度而导致排放压力或排放速率比预设值高。
接着,在步骤S23,重装配第一和第二腔室并且在步骤S24恢复化学气相沉积装置的运行。此后在步骤S20,重新检测第二腔室200以确定排放压力或排放速率是否比预设值高。当在步骤S20确定了排放压力或排放速率比预定值高时,重复步骤S21~S24。当在步骤S20确定了排放压力或者排放速率不是很高或者与预设值相比足够优化时,可以确定操作过程中在第二腔室内形成了合适的排放路径而没有引起流体流的涡流。因此,可以继续运行化学气相沉积装置。
当然,涉及检测排放压力或者排放速率是否比预设值高的步骤S20~S24可以在检测是否产生涡流的步骤S10~S14之前执行。
根据本发明的实施方式,即使剩余气体排出第二腔室200的排放路径没有得到恰当地设计,也能够通过仅仅替换引导单元或者为引导单元插入额外的部件(例如,图3中的辅助板700)来恰当地控制排放路径而不必重新设计或者重新组装化学气相沉积装置。
在已经参考其示例性实施方式具体地示出并描述本发明的情况下,本领域普通技术人员应理解在不脱离由后附权利要求所限定的本发明的精神和范围的情况下,可在其中作出各种形式和细节上的改变。因此,对本发明的实施方式的进一步改进不能脱离本发明的技术范围。
Claims (20)
1.一种化学气相沉积装置,所述化学气相沉积装置包含:
腔室,所述腔室具有用于将处理气引入所述腔室中的进气口和用于将气体排出所述腔室的排气口;
基座,所述基座具有其上能够加载位于腔室内部的基板的表面,其中向基座的表面提供所述处理气;和
可更换引导单元,所述可更换引导单元可拆卸地安装在所述腔室内部以将所述腔室中的气体引导至所述排气口。
2.如权利要求1所述的化学气相沉积装置,所述化学气相沉积装置还包含:
向其上能够加载基板的基座表面提供处理气的喷头。
3.如权利要求1所述的化学气相沉积装置,其中,所述引导单元设置在所述腔室中以环绕所述基座。
4.如权利要求1所述的化学气相沉积装置,其中,所述引导单元包含位于所述腔室中的与所述基座有一定距离的第一壁部。
5.如权利要求4所述的化学气相沉积装置,其中,所述第一壁部为圆筒状,且所述基座位于所述圆筒状第一壁部的内部。
6.如权利要求4所述的化学气相沉积装置,其中,所述引导单元还包含从所述第一壁部的下端向所述基座延伸的曲部。
7.如权利要求4所述的化学气相沉积装置,其中,所述引导单元还包含连接至所述第一壁部的第二壁部,其中所述第二壁部环绕处于其中的所述基座,并且其中所述第一壁部以预定的第一壁部和第二壁部的距离环绕所述第二壁部。
8.如权利要求7所述的化学气相沉积装置,其中,所述第一壁部和第二壁部为圆筒状,且所述第一壁部的直径大于第二壁部的直径,并且其中所述第二壁部处在最靠近所述基座而不在其间引起摩擦的位置。
9.如权利要求8所述的化学气相沉积装置,其中,所述引导单元的第一壁部和第二壁部的下端通过曲部连接。
10.如权利要求8所述的化学气相沉积装置,其中,所述第一壁部形成有第一壁部孔以产生至所述排气口的排放路径。
11.如权利要求7所述的化学气相沉积装置,其中,所述引导单元还包含连接在所述第一壁部和第二壁部之间的辅助板。
12.如权利要求11所述的化学气相沉积装置,其中,连接在所述第一壁部和第二壁部之间的所述辅助板为圆筒状。
13.如权利要求11所述的化学气相沉积装置,其中,该辅助板形成有辅助板孔以产生至所述第一壁部孔的排放路径。
14.如权利要求1所述的化学气相沉积装置,其中,所述引导单元由石英制成。
15.一种用于化学气相沉积装置中的可更换引导单元,所述化学气相沉积装置包含腔室、具有其上加载位于所述腔室中的基板的表面的基座和向所述基座的表面注入处理气的喷头,其中,所述可更换引导单元可拆卸地安装在所述腔室中以将从喷头注入的所述处理气引导至形成在所述腔室中的腔孔中。
16.一种控制化学气相沉积装置中的气体排放路径的方法,所述化学气相沉积装置具有腔室、具有其上加载位于所述腔室中的基板的表面的基座和向所述基板的表面注入处理气的喷头,所述方法包括:
安装具有将所述气体引导至形成在所述腔室中的腔孔的第一侧壁的第一引导单元,以便控制处理气所通过的排放路径的宽度。
17.如权利要求16所述的方法,所述方法还包括:
在所述基座和所述第一引导单元的第一侧壁之间插入辅助板以控制处理气的排放路径的宽度。
18.如权利要求16所述的方法,所述方法还包括:
使用具有第二侧壁的第二引导单元代替所述第一引导单元,其中所述第一侧壁与所述基座之间的距离不同于所述第二侧壁与所述基座之间的距离,以控制处理气的排放路径的宽度。
19.如权利要求18所述的方法,其中,所述第一侧壁和第二侧壁为圆筒状,从而使所述第二引导单元的半径小于所述第一引导单元的半径,以起到减小处理气的排放路径的宽度的作用。
20.如权利要求18所述的方法,其中,所述第一侧壁和第二侧壁为圆筒状,从而使所述第二引导单元的半径大于所述第一引导单元的半径,以起到增大处理气的排放路径的宽度的作用。
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CN101197249A (zh) * | 2006-12-06 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室内衬及包含该内衬的反应腔室 |
CN101441982A (zh) * | 2007-11-20 | 2009-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 腔室内衬及等离子体加工装置 |
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CN108070846B (zh) * | 2016-11-15 | 2019-12-31 | Asm知识产权私人控股有限公司 | 气体供应单元及包括气体供应单元的基板处理装置 |
CN114807904A (zh) * | 2022-04-27 | 2022-07-29 | 无锡先为科技有限公司 | Cvd反应器及其应用的导流组件 |
CN115101400A (zh) * | 2022-08-25 | 2022-09-23 | 拓荆科技(上海)有限公司 | 半导体加工装置 |
Also Published As
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KR101245769B1 (ko) | 2013-03-20 |
TWI393802B (zh) | 2013-04-21 |
TW201114943A (en) | 2011-05-01 |
US8876974B2 (en) | 2014-11-04 |
KR20110011268A (ko) | 2011-02-08 |
US20110027480A1 (en) | 2011-02-03 |
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