CN109196141A - 连续化学气相沉积(cvd)多区域处理套件 - Google Patents
连续化学气相沉积(cvd)多区域处理套件 Download PDFInfo
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Abstract
本文提供了一种用于在沉积腔室中使用的多区域处理套件。在一些实施方式中,多区域处理套件包括:主体,具有形成在主体中的多个沉积区域;一个或多个气体注入导管,经由多个气体入口而流体耦接到多个沉积区域的每一个的第一侧;排气导管,经由多个排气孔而流体耦接到多个沉积区域的每一个的第二侧;及多区域加热器,具有多个加热区域,其中多个加热区域的一个或多个对应于多个沉积区域的每一个。
Description
技术领域
本公开内容的实施方式一般关于沉积腔室,且更具体地,是关于用于在沉积腔室中使用的多区域处理套件。
背景技术
连续化学气相沉积(CVD)目前用于通过将涂层沉积到纤维丝束(fiber tow)基板上来产生复合涂布的纤维丝束。通常,分离的腔室/炉(furnace)需要在纤维丝束基板上沉积多个涂层(每一材料一个腔室)。每一腔室在适以沉积特定材料的一个温度下操作。因此,在纤维丝束上沉积不同材料的多个涂层是耗时且低效的。
因此,本发明人提供了用于在处理腔室中使用的改进的处理套件的实施方式。
发明内容
本文提供了一种用于在沉积腔室中使用的多区域处理套件。在一些实施方式中,多区域处理套件包括:主体,具有形成在主体中的多个沉积区域;一个或多个气体注入导管,经由多个气体入口而流体耦接到多个沉积区域的每一个的第一侧;排气导管,经由多个排气孔而流体耦接到多个沉积区域的每一个的第二侧;及多区域加热器,具有多个加热区域,其中多个加热区域的一个或多个对应于多个沉积区域的每一个。
在一些实施方式中,一种沉积腔室包括:腔室主体,具有内部容积;多个柱,耦接到腔室主体并延伸进入内部容积中;及多区域处理套件,设置在内部容积内。处理套件包括:主体,具有形成在主体中的多个沉积区域;一个或多个气体注入导管,经由多个气体入口而流体耦接到多个沉积区域的每一个的第一侧;排气导管,经由多个排气孔而流体耦接到多个沉积区域的每一个的第二侧;及多区域加热器,具有多个加热区域,其中多个加热区域的一个或多个对应于多个沉积区域的每一个,其中处理套件的主体包括多个特征,以接收多个柱的相应的一个。
在一些实施方式中,一种多区域处理套件包括:主体,具有形成在主体中的多个沉积区域;一个或多个气体注入导管,经由多个气体入口而流体耦接到多个沉积区域的每一个的第一侧;排气导管,经由多个排气孔而流体耦接到多个沉积区域的每一个的第二侧;多区域加热器,具有多个加热区域,其中多个加热区域的一个或多个对应于多个沉积区域的每一个;及多个净化区域,相应地设置成与多个沉积区域相邻。
下面讨论本公开内容的其它实施方式和变型。
附图说明
通过参考附随的附图中所描绘的本公开内容的说明性实施方式,可理解简要概要于上文并更详细讨论于下文的本公开内容的实施方式。然而,附随的附图仅绘示了本公开内容的典型实施方式,且因此不应被认为是对保护范围的限制,因为本公开内容可允许其它等效的实施方式。
图1描绘了根据本公开内容的一些实施方式的用于在沉积腔室中使用的处理套件的示意图。
图2描绘了根据本公开内容的一些实施方式的用于在沉积腔室中使用的处理套件的等距视图。
图3描绘了图2的处理套件一部分的示意性横截面。
图4描绘了根据本公开内容的一些实施方式的设置在沉积腔室中的处理套件。
图5描绘了根据本公开内容的一些实施方式的用于在沉积腔室中使用的处理套件的示意性横截面图。
为促进理解,在可能的情况下,已使用相同的元件符号来指示共用于附图的相同元件。图式没有按比例绘制,且为了清楚起见可被简化。一个实施方式的元件和特征可有利地并入其它实施方式中,而无需赘述。
具体实施方式
本文提供了用于在沉积腔室中使用的多区域处理套件的实施方式。所公开的处理套件通过消除对分离的腔室的需要并在处理套件内提供多个区域而有利地减少了将复合膜沉积在纤维丝束基板上所需的时间。所公开的处理套件还有利地易于移除以进行维修。
图1显示了根据本公开内容的一些实施方式的具有多区域处理套件104的沉积腔室100的示意图。在一些实施方式中,沉积腔室100可为连续化学气相沉积(CVD)腔室,用以将材料沉积在从沉积腔室100的解绕卷轴(despool)容积移动到卷轴容积的纤维丝束基板的多个纤维上。丝束的移动由箭头120所指示。如上所述,发明人已经观察到,在纤维丝束基板上沉积多于一种的材料的典型处理时间增加,这是因为使用了分离的腔室,每个腔室用于沉积不同的材料。因此,本发明人已经开发了具有多个容积(或沉积区域109、111、113)的处理套件104,每一个容积(或沉积区域)用于沉积不同的材料。在一些实施方式中,处理套件104还可包括净化区域108、110、112,净化气体通过净化区域108、110、112流动,以清除纤维上的任何多余的材料。处理套件可由任何与处理相容的陶瓷材料所形成,诸如(例如)涂布碳化硅的石墨。
处理套件104进一步包括具有多个加热区域的多区域加热器106,以根据需要加热每一沉积区域。在一些实施方式中,多区域加热器106可具有对应于多个沉积区域109、111、113的多个区域。在一些实施方式中,多区域加热器106可替代地具有对应于每一沉积区域的两个或两个以上的加热区域。
图2描绘了组装好的处理套件104的等距视图。如图2所示,处理套件104包括具有第一部分104a和第二部分104b的主体,第一部分104a和第二部分104b彼此耦接以形成通道206,纤维丝束基板通过通道206。在图2所示的实施方式中,多区域加热器106包括对应于处理套件104内的沉积区域(图2中未显示)的三个加热区域204a,204b,204c。处理套件104进一步包括多个气体注入导管202a,202b,202c,相应的气体源耦接到多个气体注入导管202a,202b,202c,用于将气体流动到沉积区域中。在一些实施方式中,处理套件104设置在沉积腔室内,所述沉积腔室用以在纤维丝束基板上沉积氮化硼、掺杂硅的氮化硼、氮化硅和各种含碳膜。为了促进这种材料的沉积,多区域加热器106设置成紧邻处理套件104,以确保在处理套件104的每一沉积区域上的期望的加热轮廓。
图3描绘了沿图2中3-3'线所截取的处理套件104的示意性横截面视图。为了清楚和简洁的目的,以下描述将针对一个沉积区域进行并适用于多个沉积区域109、111、113的每一个。如图3所示,气体注入导管202c经由多个气体入口302而耦接到第三沉积区域113。在一些实施方式中,气体注入导管202c可由石英所形成并使用冷却剂进行冷却,以冷却通过气体注入导管202c和多个气体入口302的气体。其结果是,气体注入导管202c和多个气体入口302中的寄生沉积实质地减小或消除。在一些实施方式中,气体注入导管202c可通过将将气体注入导管202c封装在冷却的护罩(未显示)中来冷却。在一些实施方式中,护罩可由金属(诸如镍)所形成,冷却剂通道通过护罩而延伸以流动冷却剂。
尽管图3中描绘了与第三沉积区域113相关联的一个气体注入导管202c,但处理套件104可包括两个或两个以上气体注入导管,以将两个或两个以上前驱物流动到第三沉积区域113中,以在沉积区域内混合,并沉积到纤维丝束基板上。通过允许前驱物气体在沉积区域内而不是沉积区域的上游(即,在气体注入导管中)混合,(多个)气体注入导管和多个气体入口内的寄生沉积进一步减小。取决于处理参数,多个气体入口302还可被分组成一个或多个区域,以促进多个分离、异质的气体流或一个均质的气体流的传送。
处理套件104包括流体耦接到排气导管306的多个排气孔304。在一些实施方式中,排气导管306也可由石英所形成并被冷却,以避免在排气导管306中的寄生沉积,否则会导致来自沉积区域的排气流的阻塞。
图4描绘了根据本公开内容的一些实施方式的设置在沉积腔室400的内部容积内的处理套件104。如图4所示,处理套件104经由多个柱404而耦接到腔室主体402的内部。多个柱可使用任何手段(如,焊接、螺接等)而固定到沉积腔室400的内部。为了将处理套件104耦接到腔室主体402,处理套件104可包括多个特征406,每一特征经构造以接收相应柱404的端部。在一些实施方式中,多个特征是槽,通过这些槽多个柱404的相应柱404的端部被插入,以允许处理套件104悬挂在多个柱404上。这些槽经构造以允许处理套件沿着平行于丝束方向的轴线而进行热膨胀。在一些实施方式中,处理套件104可包括一个或多个孔(未显示),高温计延伸通过一个或多个孔并直接测量丝束的温度。可基于一个或多个高温计的测量来更精确地控制输送到多区域加热器106的功率。
图5描绘了根据本公开内容的一些实施方式的处理套件504。为了清楚起见,仅显示和描述了处理套件504的一个区域。处理套件504实质地类似于以上所讨论的处理套件104,除了气体注入导管502和排气导管506被布置成平行于由箭头520所显示的丝束运动的方向而流动气体,而处理套件104经构造以垂直于丝束的方向而流动气体。
虽然前述内容关于本公开内容的实施方式,可在不背离本发明的基本范围的情况下设计本公开内容的其它和进一步的实施方式。
Claims (15)
1.一种多区域处理套件,包含:
主体,具有形成在所述主体中的多个沉积区域;
一个或多个气体注入导管,经由多个气体入口而流体耦接到所述多个沉积区域的每一个的第一侧;
排气导管,经由多个排气孔而流体耦接到所述多个沉积区域的每一个的第二侧;及
多区域加热器,具有多个加热区域,其中所述多个加热区域的一个或多个对应于所述多个沉积区域的每一个。
2.根据权利要求1所述的多区域处理套件,其中所述主体由耦接在一起的两个部分形成。
3.根据权利要求1所述的多区域处理套件,进一步包含:
多个净化区域,相应地设置成与所述多个沉积区域相邻。
4.根据权利要求1所述的多区域处理套件,其中所述一个或多个气体注入导管和所述排气导管由石英形成。
5.根据权利要求1到4任一项所述的多区域处理套件,其中所述一个或多个气体注入导管被封装在冷却的护罩中。
6.根据权利要求1到4任一项所述的多区域处理套件,其中所述多个气体入口被分成一个或多个区域。
7.根据权利要求1到4任一项所述的多区域处理套件,其中所述一个或多个气体注入导管和所述排气导管经构造以在垂直于纤维丝束基板的丝束的方向而流动气体。
8.根据权利要求1到4任一项所述的多区域处理套件,其中所述一个或多个气体注入导管和所述排气导管经构造以平行于纤维丝束基板的丝束的方向而流动气体。
9.一种沉积腔室,包含:
腔室主体,具有内部容积;
多个柱,耦接到所述腔室主体并延伸进入到所述内部容积中;及
多区域处理套件,设置在所述内部容积内,所述多区域处理套件包含:
主体,具有形成在所述主体中的多个沉积区域;
一个或多个气体注入导管,经由多个气体入口而流体耦接到所述多个沉积区域的每一个的第一侧;
排气导管,经由多个排气孔而流体耦接到所述多个沉积区域的每一个的第二侧;及
多区域加热器,具有多个加热区域,其中所述多个加热区域的一个或多个对应于所述多个沉积区域的每一个,
其中所述处理套件的所述主体包括多个特征,以接收所述多个柱的相应的一个。
10.根据权利要求9所述的沉积腔室,其中所述多个特征是多个槽,所述槽经构造以允许所述多区域处理套件沿着与纤维丝束基板的丝束的方向平行的方向的热膨胀。
11.根据权利要求9所述的沉积腔室,其中所述多区域处理套件进一步包含:
多个净化区域,相应地设置成与所述多个沉积区域相邻。
12.根据权利要求9到11任一项所述的沉积腔室,其中所述一个或多个气体注入导管和所述排气导管由石英形成。
13.根据权利要求9到11任一项所述的沉积腔室,其中所述多个气体入口被分成一个或多个区域。
14.根据权利要求13所述的沉积腔室,其中所述一个或多个气体注入导管和所述排气导管经构造以垂直于纤维丝束基板的丝束的方向而流动气体。
15.根据权利要求13所述的沉积腔室,其中所述一个或多个气体注入导管和所述排气导管经构造以平行于纤维丝束基板的丝束的方向而流动气体。
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US62/344,968 | 2016-06-02 | ||
PCT/US2017/035712 WO2017210575A1 (en) | 2016-06-02 | 2017-06-02 | Continuous chemical vapor depositioin (cvd) multi-zone process kit |
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CN109196141A true CN109196141A (zh) | 2019-01-11 |
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US (1) | US20200291523A1 (zh) |
EP (1) | EP3464677A4 (zh) |
JP (1) | JP7090035B2 (zh) |
CN (1) | CN109196141B (zh) |
SG (2) | SG11201810643QA (zh) |
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JP2019518139A (ja) | 2019-06-27 |
SG11201810643QA (en) | 2018-12-28 |
WO2017210575A1 (en) | 2017-12-07 |
CN109196141B (zh) | 2021-06-29 |
EP3464677A1 (en) | 2019-04-10 |
JP7090035B2 (ja) | 2022-06-23 |
EP3464677A4 (en) | 2020-02-19 |
SG10202011722SA (en) | 2021-01-28 |
TW201809350A (zh) | 2018-03-16 |
TWI747909B (zh) | 2021-12-01 |
US20200291523A1 (en) | 2020-09-17 |
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