WO2021227132A1 - 一种可加热的蜂窝式多通道进气结构 - Google Patents

一种可加热的蜂窝式多通道进气结构 Download PDF

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WO2021227132A1
WO2021227132A1 PCT/CN2020/092745 CN2020092745W WO2021227132A1 WO 2021227132 A1 WO2021227132 A1 WO 2021227132A1 CN 2020092745 W CN2020092745 W CN 2020092745W WO 2021227132 A1 WO2021227132 A1 WO 2021227132A1
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air intake
intake pipe
heatable honeycomb
intake structure
branch
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PCT/CN2020/092745
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English (en)
French (fr)
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刘子优
肖蕴章
钟国仿
陈炳安
张灿
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深圳市纳设智能装备有限公司
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Publication of WO2021227132A1 publication Critical patent/WO2021227132A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Definitions

  • the present invention relates to the technical field of air intake structure of CVD equipment, in particular to a heatable honeycomb multi-channel air intake structure.
  • CVD is the abbreviation of Chemical Vapor Deposition, which refers to the gas phase reaction at high temperature, such as the thermal decomposition of metal halides, organic metals, hydrocarbons, etc., hydrogen reduction or chemical reaction of its mixed gas at high temperature to precipitate metals , Oxides, carbides and other inorganic materials.
  • Silicon carbide (SiC) material is the third-generation wide-gap semiconductor material following the first-generation semiconductor material silicon (Si) and the second-generation semiconductor (gallium arsenide GaAs).
  • the crystal structure of silicon carbide has the characteristics of homogeneity and polymorphism, and its basic structure is the tetrahedral structure of Si-C, which is a close-packed structure. Its performance has superior performance such as higher forbidden band width, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, etc. It is used in semiconductor lighting, power electronic devices, lasers, detectors and other fields. Great prospects.
  • the inlet channels of the existing CVD equipment are mostly square, with corners of 90°.
  • the gas touches the corners at different angles it is easy to produce vortex, which is not conducive to the stability of gas delivery; due to the need to deliver a variety of different gases , It is necessary to set up multiple independent intake passages. If the intake passage is circular, the tightness of the arc-shaped area is low.
  • the present invention provides a heatable honeycomb multi-channel air intake structure to avoid the use of traditional square air intake channels to generate eddy currents at the corners and improve the stability of gas delivery.
  • the heatable honeycomb multi-channel air intake structure of the present invention includes a plurality of air intake pipe units, the cross section of the air intake pipe unit is a regular hexagon, and the outer walls of adjacent air intake pipe units are connected to each other to form a honeycomb shape.
  • a sealing cover is provided on the same side of all the air intake pipe units, the sealing cover is provided with a branch pipe communicating with the inside of the air intake pipe unit through, at least one branch pipe forms a branch unit, and each branch pipe
  • the circuit unit is connected with a centralized pipe.
  • the present invention is further preferred: the center line of the placement groove and the air inlet pipe unit are parallel to each other.
  • the heating device is an electric heating wire.
  • the outer wall of the intake pipe unit is provided with a heat insulation layer.
  • the heat insulation layer is made of zirconium dioxide, yttrium trioxide or aluminum oxide.
  • the air inlet channel of the present invention adopts an air inlet pipe unit with a regular hexagonal cross-sectional shape, and the side angle of the air inlet pipe unit is 120°. Compared with a square with a side angle of 90°, the probability of vortex generation is reduced. At the same time, there is no gap between the adjacent air inlet pipe units, which ensures a high degree of tightness and reduces space waste.
  • the air intake end of the air intake pipe unit is provided with a sealing cover, and the sealing cover is provided with a branch pipe.
  • Any number of branch pipes form a branch unit, which can divide any number of air intake pipe units into multiple groups.
  • the tube sends the same gas into the reaction equipment, so that the gas entering the reaction equipment can enter from different height positions, and can play the role of accelerating the mixing of different gases.
  • the centralized pipe is equipped with a gas flow meter, which can optimize the gas flow ratio according to the result of the deposited film thickness and adjust the appropriate process formula.
  • Each intake pipe unit is equipped with an electric heating wire, and the gas circulating in each intake pipe unit is heated more uniformly. Different preheating temperatures can adjust the process reaction rate in the area and also adjust the uniformity of the deposited film thickness. .
  • the outer wall of the intake pipe unit is plated with a thermal insulation layer, which is made of zirconium dioxide, yttrium trioxide or aluminum oxide. With the high thermal insulation characteristics of the honeycomb structure, the heat insulation between different groups is minimized. Temperature influence.
  • Figure 1 is a schematic diagram of the three-dimensional structure of the present invention.
  • Figure 2 is a schematic view of the end face shown in Figure 1;
  • Figure 3 is a three-dimensional schematic diagram of the intake pipe unit
  • Figure 4 is a schematic diagram of vortex generated when the intake passage is square
  • Figure 5 is a schematic diagram of low tightness when the intake passage is round
  • the heatable honeycomb multi-channel air intake structure of the present invention includes a plurality of air intake pipe units 1, the cross section of the air intake pipe unit 1 is a regular hexagon, and the outer walls of adjacent air intake pipe units 1 are connected to each other to form a honeycomb shape.
  • the air inlet channel of the present invention adopts the air inlet pipe unit 1 with a regular hexagonal cross-sectional shape, and the side angle of the air inlet pipe unit 1 is 120°. Compared with a square with a 90° side angle, the generation of vortex is reduced. The odds. At the same time, the adjacent intake pipe units 1 are connected without gaps, which ensures a high degree of tightness and reduces space waste.
  • This embodiment is further optimized on the basis of embodiment 1 as follows: all the air inlet pipe units 1 are provided with a sealing cover 2 on the same side, and the sealing cover 2 is provided with a branch pipe 3 that communicates with the inside of the air inlet pipe unit 1 through. , At least one branch pipe 3 forms a branch unit, and each branch unit is connected with a centralized pipe 4.
  • the central pipe 4 is equipped with a gas flow meter 5.
  • a plurality of placing grooves 6 are opened on the inner wall of the air intake pipe unit 1, and a heating device is arranged in the placing grooves 6.
  • the placement groove 6 and the center line of the intake pipe unit 1 are parallel to each other.
  • the heating device is an electric heating wire.
  • the air inlet end of the air inlet pipe unit 1 is provided with a sealing cover 2, and the sealing cover 2 is provided with a branch pipe 3, any number of branch pipes 3 form a branch unit, and any number of inlet pipes can be formed.
  • the gas pipe unit 1 is divided into multiple groups, and the same gas is fed into the reaction device through the centralized pipe 4, so that the gas entering the reaction device can enter from different height positions, which can accelerate the mixing of different gases.
  • the centralized pipe 4 is equipped with a gas flow meter 5, which can optimize the gas flow ratio according to the result of the deposited film thickness, and adjust a suitable process formula.
  • Each intake pipe unit 1 is equipped with an electric heating wire, and the gas circulating inside each intake pipe unit 1 is heated more uniformly. Different preheating temperatures can adjust the process reaction rate in the area and also adjust the deposition film thickness. Uniformity.
  • the outer wall of the air inlet pipe unit 1 is provided with a heat insulation layer.
  • the heat insulation layer is made of zirconium dioxide, yttrium trioxide or aluminum oxide.
  • the outer wall of the air intake pipe unit 1 is plated with a heat insulation layer, which is made of zirconium dioxide, yttrium trioxide or aluminum oxide, and the high heat insulation characteristics of the honeycomb structure are used to minimize The temperature effect between different groups.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

一种可加热的蜂窝式多通道进气结构，涉及CVD设备进气结构技术领域。该蜂窝式多通道进气结构包括多个进气管单元（1），进气管单元（1）的截面为正六边形，相邻进气管单元（1）的外壁相互连接形成蜂窝状。所有进气管单元（1）的同一侧设置有密封盖（2），密封盖（2）贯穿设置有与进气管单元（1）内部相互连通的支路管（3），至少一个支路管（3）形成一个支路单元，每一支路单元均连通有集中管（4）。

Description

一种可加热的蜂窝式多通道进气结构 技术领域
本发明涉及CVD设备进气结构技术领域，具体涉及一种可加热的蜂窝式多通道进气结构。
背景技术
CVD是Chemical Vapor Deposition的简称，是指高温下的气相反应，例如，金属卤化物、有机金属、碳氢化合物等的热分解，氢还原或使它的混合气体在高温下发生化学反应以析出金属、氧化物、碳化物等无机材料的方法。
碳化硅(SiC)材料是继第一代半导体材料硅(Si)和第二代半导体(砷化镓GaAs)后的第三代宽禁带半导体材料。碳化硅晶体结构具有同质多型的特点，其基本结构是Si-C的四面体结构，属于密堆积结构。其性能具有更高的禁带宽度、高临界击穿电场、高导热率、高载流子饱和漂移速度等优越的性能，在半导体照明、电力电子器件、激光器、探测器等领域应用中蕴含着巨大的前景。
在所有的化学气象沉积领域，对反应气体的控制尤为重要，精准度高、均匀性高的反应室气体氛围对工艺沉浸薄膜的质量参数起关键作用，拥有良好的可重复性和灵活的可调节性是量产型工艺和科研型工艺的重要条件。
现有CVD设备的进气通道多为方形，边角均为90°，当气体以不同角度触碰边角时，容易产生涡流，不利于气体输送的稳定性；由于需要输送多种不同的气体，需要设置多个相互独立的进气通道，若进气通道采用圆形，弧形区域的密合度低。
发明内容
针对现有技术中的缺陷，本发明提供一种可加热的蜂窝式多通道进气结 构，以避免采用传统的方形进气通道在边角处产生涡流，提高气体输送的稳定性。
本发明具体采用以下技术方案：
本发明的可加热的蜂窝式多通道进气结构，包括多个进气管单元，进气管单元的截面为正六边形，相邻进气管单元的外壁相互连接形成蜂窝状。
本发明作为进一步优选的：所有进气管单元的同一侧设置有密封盖，密封盖贯穿设置有与进气管单元内部相互连通的支路管，至少一个支路管形成一个支路单元，每一支路单元均连通有集中管。
本发明作为进一步优选的：集中管配设有气体流量计。
本发明作为进一步优选的：进气管单元内壁开设有多个放置槽，放置槽内设置有加热装置。
本发明作为进一步优选的：放置槽与进气管单元的中心线相互平行。
本发明作为进一步优选的：加热装置为电加热丝。
本发明作为进一步优选的：进气管单元的外壁设置有隔热层。
本发明作为进一步优选的：隔热层采用二氧化锆、三氧化二钇或氧化铝制成。
本发明的有益效果体现在：
1、本发明的进风通道采用截面形状为正六边形的进气管单元，进气管单元的边角为120°，相比于边角为90°的方形，降低涡流产生的几率。同时相邻的进气管单元连接没有空隙，保证了密合度高，减少空间的浪费。
2、进气管单元的进气端设置有密封盖，密封盖设置有支路管，任意数量的支路管形成一个支路单元，即可将任意数量的进气管单元分隔为多组，通过集中管将同一种气体送入反应设备，使进入反应设备的气体能从不同高度位置进入，能够起到不同气体加速混合的作用。集中管配设有气体流量计，能够根据所沉积膜厚的结果来进行气体流量配比的优化，调整出合适的工艺配方。每一进气管单元均设置有电加热丝，每个进气管单元内部流通的气体受热更为均 匀，不同的预热温度，可调节该区域的工艺反应速率，同样可调整沉积膜厚的均匀性。
3、进气管单元的外壁镀有隔热层，隔热层采用二氧化锆、三氧化二钇或氧化铝制成，配合蜂窝结构的高隔热特性，最大程度的降低了不同组之间的温度影响。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍。在所有附图中，类似的元件或部分一般由类似的附图标记标识。附图中，各元件或部分并不一定按照实际的比例绘制。
图1为本发明的立体结构示意图；
图2为图1所示端面示意图；
图3为进气管单元的立体示意图；
图4为进气通道是方形时产生涡流的示意图；
图5为进气通道是圆形时密合度低的示意图；
附图中，1-进气管单元，2-密封盖，3-支路管，4-集中管，5-气体流量计，6-放置槽。
具体实施方式
下面将结合附图对本发明技术方案的实施例进行详细的描述。以下实施例仅用于更加清楚地说明本发明的技术方案，因此只作为示例，而不能以此来限制本发明的保护范围。
需要注意的是，除非另有说明，本申请使用的技术术语或者科学术语应当为本发明所属领域技术人员所理解的通常意义。
实施例1
本发明的可加热的蜂窝式多通道进气结构，包括多个进气管单元1，进气 管单元1的截面为正六边形，相邻进气管单元1的外壁相互连接形成蜂窝状。
采用上述技术方案后：本发明的进风通道采用截面形状为正六边形的进气管单元1，进气管单元1的边角为120°，相比于边角为90°的方形，降低涡流产生的几率。同时相邻的进气管单元1连接没有空隙，保证了密合度高，减少空间的浪费。
实施例2
本实施例是在实施例1的基础上作的进一步优化如下：所有进气管单元1的同一侧设置有密封盖2，密封盖2贯穿设置有与进气管单元1内部相互连通的支路管3，至少一个支路管3形成一个支路单元，每一支路单元均连通有集中管4。集中管4配设有气体流量计5。进气管单元1内壁开设有多个放置槽6，放置槽6内设置有加热装置。放置槽6与进气管单元1的中心线相互平行。加热装置为电加热丝。
采用上述技术方案后：进气管单元1的进气端设置有密封盖2，密封盖2设置有支路管3，任意数量的支路管3形成一个支路单元，即可将任意数量的进气管单元1分隔为多组，通过集中管4将同一种气体送入反应设备，使进入反应设备的气体能从不同高度位置进入，能够起到不同气体加速混合的作用。集中管4配设有气体流量计5，能够根据所沉积膜厚的结果来进行气体流量配比的优化，调整出合适的工艺配方。每一进气管单元1均设置有电加热丝，每个进气管单元1内部流通的气体受热更为均匀，不同的预热温度，可调节该区域的工艺反应速率，同样可调整沉积膜厚的均匀性。
实施例3
本实施例是在实施例1的基础上作的进一步优化如下：进气管单元1的外壁设置有隔热层。隔热层采用二氧化锆、三氧化二钇或氧化铝制成。
采用上述技术方案后：进气管单元1的外壁镀有隔热层，隔热层采用二氧化锆、三氧化二钇或氧化铝制成，配合蜂窝结构的高隔热特性，最大程度的降低了不同组之间的温度影响。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围，其均应涵盖在本发明的权利要求和说明书的范围当中。

Claims (8)

  1. 一种可加热的蜂窝式多通道进气结构，其特征在于：包括多个进气管单元，所述进气管单元的截面为正六边形，相邻进气管单元的外壁相互连接形成蜂窝状。
  2. 根据权利要求1所述的可加热的蜂窝式多通道进气结构，其特征在于：所有进气管单元的同一侧设置有密封盖，所述密封盖贯穿设置有与进气管单元内部相互连通的支路管，至少一个支路管形成一个支路单元，每一支路单元均连通有集中管。
  3. 根据权利要求2所述的可加热的蜂窝式多通道进气结构，其特征在于：所述集中管配设有气体流量计。
  4. 根据权利要求1所述的可加热的蜂窝式多通道进气结构，其特征在于：所述进气管单元内壁开设有多个放置槽，所述放置槽内设置有加热装置。
  5. 根据权利要求4所述的可加热的蜂窝式多通道进气结构，其特征在于：所述放置槽与进气管单元的中心线相互平行。
  6. 根据权利要求4所述的可加热的蜂窝式多通道进气结构，其特征在于：所述加热装置为电加热丝。
  7. 根据权利要求1所述的可加热的蜂窝式多通道进气结构，其特征在于：所述进气管单元的外壁设置有隔热层。
  8. 根据权利要求7所述的可加热的蜂窝式多通道进气结构，其特征在于：所述隔热层采用二氧化锆、三氧化二钇或氧化铝制成。
PCT/CN2020/092745 2020-05-15 2020-05-28 一种可加热的蜂窝式多通道进气结构 WO2021227132A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6905547B1 (en) * 2000-12-21 2005-06-14 Genus, Inc. Method and apparatus for flexible atomic layer deposition
TW201335418A (zh) * 2012-02-17 2013-09-01 Tokyo Electron Ltd Ｍｏｃｖｄ反應器用淋灑頭、ｍｏｃｖｄ反應器、ｍｏｃｖｄ裝置、以及潔淨方法
CN103320770A (zh) * 2013-06-21 2013-09-25 光垒光电科技（上海）有限公司 气体喷淋头以及气相沉积反应腔
CN107779843A (zh) * 2017-12-11 2018-03-09 湖南顶立科技有限公司 一种化学气相沉积炉
CN109273378A (zh) * 2018-09-20 2019-01-25 长江存储科技有限责任公司 平衡晶圆弯曲度分布的方法
CN212152434U (zh) * 2020-05-15 2020-12-15 深圳市纳设智能装备有限公司 一种可加热的蜂窝式多通道进气结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102220569B (zh) * 2011-07-06 2012-07-04 南昌黄绿照明有限公司 一种垂直气流型mocvd气体输运喷头装置
CN208040582U (zh) * 2017-11-23 2018-11-02 宝沃汽车（中国）有限公司 进气管组件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6905547B1 (en) * 2000-12-21 2005-06-14 Genus, Inc. Method and apparatus for flexible atomic layer deposition
TW201335418A (zh) * 2012-02-17 2013-09-01 Tokyo Electron Ltd Ｍｏｃｖｄ反應器用淋灑頭、ｍｏｃｖｄ反應器、ｍｏｃｖｄ裝置、以及潔淨方法
CN103320770A (zh) * 2013-06-21 2013-09-25 光垒光电科技（上海）有限公司 气体喷淋头以及气相沉积反应腔
CN107779843A (zh) * 2017-12-11 2018-03-09 湖南顶立科技有限公司 一种化学气相沉积炉
CN109273378A (zh) * 2018-09-20 2019-01-25 长江存储科技有限责任公司 平衡晶圆弯曲度分布的方法
CN212152434U (zh) * 2020-05-15 2020-12-15 深圳市纳设智能装备有限公司 一种可加热的蜂窝式多通道进气结构

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