TWI747909B - 連續化學氣相沉積（cvd）多區域處理套件 - Google Patents
連續化學氣相沉積（cvd）多區域處理套件 Download PDFInfo
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Abstract
於此提供了一種用於在沉積腔室中使用的多區域處理套件。在一些實施例中，多區域處理套件包括：主體，具有形成在主體中的複數個沉積區域；一或多個氣體注入導管，經由複數個氣體入口而流體耦合到複數個沉積區域的每一個的第一側；排氣導管，經由複數個排氣孔而流體耦合到複數個沉積區域的每一個的第二側；及多區域加熱器，具有複數個加熱區域，其中複數個加熱區域的一或多個對應於複數個沉積區域的每一個。
Description
本揭露書的實施例一般關於沉積腔室，且更具體地，關於用於在沉積腔室中使用的多區域處理套件。
連續化學氣相沉積（CVD）目前用以藉由將塗層沉積到纖維絲束基板上來產生複合塗佈的纖維絲束。通常，分離的腔室/爐需要在纖維絲束基板上沉積多個塗層（每一材料一個腔室）。每一腔室在適以沉積特定材料的一個溫度下操作。因此，在纖維絲束上沉積不同材料的多個塗層是耗時且低效的。
因此，本發明人提供了用於在處理腔室中使用的改進的處理套件的實施例。
於此提供了一種用於在沉積腔室中使用的多區域處理套件。在一些實施例中，多區域處理套件包括：主體，具有形成在主體中的複數個沉積區域；一或多個氣體注入導管，經由複數個氣體入口而流體耦合到複數個沉積區域的每一個的第一側；排氣導管，經由複數個排氣孔而流體耦合到複數個沉積區域的每一個的第二側；及多區域加熱器，具有複數個加熱區域，其中複數個加熱區域的一或多個對應於複數個沉積區域的每一個。
在一些實施例中，一種沉積腔室包括：腔室主體，具有內部容積；複數個柱，耦接到腔室主體並延伸到內部容積中；及多區域處理套件，設置在內部容積內。處理套件包括：主體，具有形成在主體中的複數個沉積區域；一或多個氣體注入導管，經由複數個氣體入口而流體耦合到複數個沉積區域的每一個的第一側；排氣導管，經由複數個排氣孔而流體耦合到複數個沉積區域的每一個的第二側；及多區域加熱器，具有複數個加熱區域，其中複數個加熱區域的一或多個對應於複數個沉積區域的每一個，其中處理套件的主體包括複數個特徵，以接收複數個柱的相應一個。
在一些實施例中，一種多區域處理套件包括：主體，具有形成在主體中的複數個沉積區域；一或多個氣體注入導管，經由複數個氣體入口而流體耦合到複數個沉積區域的每一個的第一側；排氣導管，經由複數個排氣孔而流體耦合到複數個沉積區域的每一個的第二側；多區域加熱器，具有複數個加熱區域，其中複數個加熱區域的一或多個對應於複數個沉積區域的每一個；及複數個淨化區域，相應地設置成與複數個沉積區域相鄰。
下面討論本揭露書的其它實施例和變型。
於此提供了用於在沉積腔室中使用的多區域處理套件的實施例。所揭露的處理套件藉由消除了對分離的腔室的需要並在處理套件內提供了複數個區域而有利地減少了將複合膜沉積在纖維絲束基板上所需的時間。所揭露的處理套件還有利地易於移除以進行維修。
第1圖顯示了根據本揭露書的一些實施例的具有多區域處理套件104的沉積腔室100的示意圖。在一些實施例中，沉積腔室100可為連續化學氣相沉積(CVD)腔室，用以將材料沉積在從解繞捲軸(despool)容積移動到沉積腔室100的捲軸容積的纖維絲束基板的複數個纖維上。絲束的移動由箭頭120所指示。如上所述，發明人已經觀察到因為利用分離的腔室，每一者用於沉積不同的材料，在纖維絲束基板上沉積多於一種材料的典型處理時間增加。因此，本發明人已經開發了具有複數個容積(或沉積區域109、111、113)的處理套件104，每一者用於沉積不同的材料。在一些實施例中，處理套件104還可包括淨化區域108、110、112，淨化氣體通過淨化區域108、110、112流動，以清除纖維上的任何多餘的材料。處理套件可由任何與處理相容的陶瓷材料所形成，諸如(例如)碳化矽塗佈的石墨。
處理套件104進一步包括具有複數個加熱區域的多區域加熱器106，以根據需要加熱每一沉積區域。在一些實施例中，多區域加熱器106可具有對應於複數個沉積區域109、111、113的複數個區域。在一些實施例中，多區域加熱器106可替代地具有對應於每一沉積區域的兩個或兩個以上加熱區域。
第2圖描繪了組裝好的處理套件104的等距視圖。如第2圖所示，處理套件104包括具有第一部分104a和第二部分104b的主體，第一部分104a和第二部分104b彼此耦接以形成通道206，纖維絲束基板通過通道206。在第2圖所示的實施例中，多區域加熱器106包括對應於處理套件104內的沉積區域（第2圖中未顯示）的三個加熱區域204a，204b，204c。處理套件104進一步包括複數個氣體注入導管202a，202b，202c，相應的氣體源耦接到複數個氣體注入導管202a，202b，202c，用於將氣體流到沉積區域中。在一些實施例中，處理套件104設置在用以在纖維絲束基板上沉積氮化硼、摻雜矽的氮化硼、氮化矽和各種含碳膜的沉積腔室內。為了促進這種材料的沉積，多區域加熱器106設置成緊靠處理套件104，以確保在處理套件104的每一沉積區域上的期望的加熱輪廓。
第3圖描繪了沿第2圖中3-3'線所截取的處理套件104的示意性橫截面視圖。為了清楚和簡潔的目的，將對一個沉積區域進行以下描述並適用於複數個沉積區域109、111、113的每一個。如第3圖所示，氣體注入導管202c經由複數個氣體入口302而耦接到第三沉積區域113。在一些實施例中，氣體注入導管202c可由石英所形成並使用冷卻劑進行冷卻，以冷卻通過氣體注入導管202c和複數個氣體入口302的氣體。結果，氣體注入導管202c和複數個氣體入口302中的寄生沉積實質地減小或消除。在一些實施例中，氣體注入導管202c可藉由將將氣體注入導管202c封裝在冷卻的護罩（未顯示）中來冷卻。在一些實施例中，護罩可由金屬(諸如鎳)所形成，冷卻劑通道通過護罩而延伸以流動冷卻劑。
儘管第3圖中描繪了與第三沉積區域113相關聯的一個氣體注入導管202c，但處理套件104可包括兩個或兩個以上氣體注入導管，以將兩個或兩個以上前驅物流到第三沉積區域113中，以在沉積區域內混合，並沉積到纖維絲束基板上。藉由允許前驅物氣體在沉積區域內而不是沉積區域的上游（亦即，在氣體注入導管中）混合，(多個)氣體注入導管和複數個氣體入口內的寄生沉積進一步減小。取決於處理參數，複數個氣體入口302還可被分組成一或多個區域，以促進多個分離、異質的氣體流或一個均質的氣體流的傳送。
處理套件104包括流體耦接到排氣導管306的複數個排氣孔304。在一些實施例中，排氣導管306也可由石英所形成並被冷卻，以避免在排氣導管306中的寄生沉積，否則會導致來自沉積區域的排氣流的阻塞。
第4圖描繪了根據本揭露書的一些實施例的設置在沉積腔室400的內部容積內的處理套件104。如第4圖所示，處理套件104經由複數個柱404而耦接到腔室主體402的內部。複數個柱可使用任何手段（如，焊接、螺接等）而固定到沉積腔室400的內部。為了將處理套件104耦接到腔室主體402，處理套件104可包括複數個特徵406，每一特徵經配置以接收相應柱404的端部。在一些實施例中，複數個特徵是槽，將複數個柱404的相應柱404的端部插入通過槽，以允許處理套件104懸掛在複數個柱404上。槽經配置以允許處理套件沿著平行於絲束方向的軸線而進行熱膨脹。在一些實施例中，處理套件104可包括一或多個孔(未顯示)，高溫計延伸通過一或多個孔並直接量測絲束的溫度。可基於一或多個高溫計的量測來更精確地控制輸送到多區域加熱器106的功率。
第5圖描繪了根據本揭露書的一些實施例的處理套件504。為了清楚起見，僅顯示和描述了處理套件504的一個區域。處理套件504實質地類似於以上所討論的處理套件104，除了氣體注入導管502和排氣導管506佈置成平行於由箭頭520所顯示的絲束運動的方向而流動氣體，而處理套件104經配置以垂直於絲束的方向而流動氣體。
雖然前述內容關於本揭露書的實施例，本揭露書的其他和進一步的實施例可經設計而不背離本發明的基本範圍。
100:沉積腔室
104:處理套件
104a:第一部分
104b:第二部分
106:多區域加熱器
108:淨化區域
109:沉積區域
110:淨化區域
111:沉積區域
112:淨化區域
113:沉積區域
120:箭頭
202a:氣體注入導管
202b:氣體注入導管
202c:氣體注入導管
204a:加熱區域
204b:加熱區域
204c:加熱區域
206:通道
302:複數個氣體入口
304:排氣孔
306:排氣導管
400:沉積腔室
402:沉積腔室
404:柱
406:複數個特徵
504:處理套件
520:箭頭
藉由參考附隨的圖式中所描繪的本揭露書的說明性實施例可理解簡要概要於上並更詳細討輪於下的本揭露書的實施例。然而，附隨的圖式僅顯示了本揭露書的典型實施例，且因此不應被認為是對範圍的限制，因為本揭露書可允許其他等效的實施例。
第1圖描繪了根據本揭露書的一些實施例的用於在沉積腔室中使用的處理套件的示意圖。
第2圖描繪了根據本揭露書的一些實施例的用於在沉積腔室中使用的處理套件的等距視圖。
第3圖描繪了第2圖的處理套件一部分的示意性橫截面。
第4圖描繪了根據本揭露書的一些實施例的設置在沉積腔室中的處理套件。
第5圖描繪了根據本揭露書的一些實施例的用於在沉積腔室中使用的處理套件的示意性橫截面圖。
為促進理解，在可能的情況下，已使用相同的元件符號來表示共用於圖式的相同元件。圖式沒有按比例繪製，且為了清楚起見可被簡化。一個實施例的元件和特徵可有利地併入其他實施例中，而無需進一步載明。
104a‧‧‧第一部分
106‧‧‧多區域加熱器
113‧‧‧沉積區域
120‧‧‧箭頭
202c‧‧‧氣體注入導管
302‧‧‧複數個氣體入口
304‧‧‧排氣孔
306‧‧‧排氣導管
Claims (19)
- 一種多區域處理套件，包含：一主體，具有形成在該主體中的複數個沉積區域；一或多個氣體注入導管，經由複數個氣體入口而流體耦合到該複數個沉積區域的每一個的一第一側；一排氣導管，經由複數個排氣孔而流體耦合到該複數個沉積區域的每一個的一第二側；及一多區域加熱器，具有複數個加熱區域，其中該複數個加熱區域的一或多個對應於該複數個沉積區域的每一個，其中該主體由耦合在一起的兩個部分所形成，以形成一通道，該通道適於令一纖維絲束基板沿著該纖維絲束基板的一運動方向通過。
- 如請求項1所述之多區域處理套件，進一步包含：複數個淨化區域，相應地設置成與該複數個沉積區域相鄰。
- 如請求項1所述之多區域處理套件，其中該一或多個氣體注入導管和該排氣導管由石英所形成。
- 如請求項1到3任一項所述之多區域處理套件，其中該一或多個氣體注入導管被封裝在一冷卻的護罩中。
- 如請求項1到3任一項所述之多區域處理套 件，其中該複數個氣體入口被分成一或多個區域。
- 如請求項1到3任一項所述之多區域處理套件，其中該一或多個氣體注入導管和該排氣導管經配置以垂直於該纖維絲束基板的一絲束的方向而流動氣體。
- 如請求項1到3任一項所述之多區域處理套件，其中該一或多個氣體注入導管和該排氣導管經配置以平行於該纖維絲束基板的一絲束的方向而流動氣體。
- 一種沉積腔室，包含：一腔室主體，具有一內部容積；複數個柱，耦接到該腔室主體並延伸到該內部容積中；及一多區域處理套件，設置在該內部容積內，該多區域處理套件包含：一主體，具有形成在該主體中的複數個沉積區域；一或多個氣體注入導管，經由複數個氣體入口而流體耦合到該複數個沉積區域的每一個的一第一側；一排氣導管，經由複數個排氣孔而流體耦合到該複數個沉積區域的每一個的一第二側；及 一多區域加熱器，具有複數個加熱區域，其中該複數個加熱區域的一或多個對應於該複數個沉積區域的每一個，其中該多區域處理套件的該主體包括複數個特徵，以接收該複數個柱的相應一個。
- 如請求項8所述之沉積腔室，其中該複數個特徵是多個槽，該等槽經配置以允許該多區域處理套件沿著與一纖維絲束基板的一絲束的方向平行的一方向進行熱膨脹。
- 如請求項8所述之沉積腔室，其中該主體由耦合在一起的兩個部分所形成。
- 如請求項8所述之沉積腔室，其中該多區域處理套件進一步包含：複數個淨化區域，相應地設置成與該複數個沉積區域相鄰。
- 如請求項8到11任一項所述之沉積腔室，其中該一或多個氣體注入導管和該排氣導管由石英所形成。
- 如請求項12所述之沉積腔室，其中該一或多個氣體注入導管被封裝在一冷卻的護罩中。
- 如請求項8到11任一項所述之沉積腔室，其中該複數個氣體入口被分成一或多個區域。
- 如請求項14所述之沉積腔室，其中該一或多個氣體注入導管和該排氣導管經配置以垂直於一纖維絲束基板的一絲束的方向而流動氣體。
- 如請求項14所述之沉積腔室，其中該一或多個氣體注入導管和該排氣導管經配置以平行於一纖維絲束基板的一絲束的方向而流動氣體。
- 一種多區域處理套件，包含：一主體，具有形成在該主體中的複數個沉積區域；一或多個氣體注入導管，經由複數個氣體入口而流體耦合到該複數個沉積區域的每一個的一第一側；一排氣導管，經由複數個排氣孔而流體耦合到該複數個沉積區域的每一個的一第二側；一多區域加熱器，具有複數個加熱區域，其中該複數個加熱區域的一或多個對應於該複數個沉積區域的每一個；及複數個淨化區域，相應地設置成與該複數個沉積區域相鄰。
- 如請求項17所述之多區域處理套件，其中該一或多個氣體注入導管和該排氣導管經配置以垂直於一纖維絲束基板的一絲束的方向而流動氣體。
- 如請求項17所述之多區域處理套件，其中該一或多個氣體注入導管和該排氣導管經配置以平行 於一纖維絲束基板的一絲束的方向而流動氣體。
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| US8153281B2 (en) * | 2003-06-23 | 2012-04-10 | Superpower, Inc. | Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape |
| US7387811B2 (en) * | 2004-09-21 | 2008-06-17 | Superpower, Inc. | Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD) |
| JP4845782B2 (ja) * | 2007-03-16 | 2011-12-28 | 東京エレクトロン株式会社 | 成膜原料 |
| US7807222B2 (en) * | 2007-09-17 | 2010-10-05 | Asm International N.V. | Semiconductor processing parts having apertures with deposited coatings and methods for forming the same |
| TW201037100A (en) * | 2009-03-16 | 2010-10-16 | Alta Devices Inc | Vapor deposition reactor system and methods thereof |
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| JP2019518139A (ja) | 2019-06-27 |
| JP7090035B2 (ja) | 2022-06-23 |
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