CN101965654B - 有机发光二极管、接触装置和制造有机发光二极管的方法 - Google Patents

有机发光二极管、接触装置和制造有机发光二极管的方法 Download PDF

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Publication number
CN101965654B
CN101965654B CN200980106793.2A CN200980106793A CN101965654B CN 101965654 B CN101965654 B CN 101965654B CN 200980106793 A CN200980106793 A CN 200980106793A CN 101965654 B CN101965654 B CN 101965654B
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layer
connection layer
stack
emitting diode
connection
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Chinese (zh)
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CN101965654A (zh
Inventor
E·朗
D·贝克尔
T·多贝廷
M·克莱因
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/814Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/824Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/828Transparent cathodes, e.g. comprising thin metal layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/88Terminals, e.g. bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
CN200980106793.2A 2008-02-29 2009-02-16 有机发光二极管、接触装置和制造有机发光二极管的方法 Active CN101965654B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008011867.2 2008-02-29
DE102008011867 2008-02-29
DE102008020816.7 2008-04-25
DE102008020816.7A DE102008020816B4 (de) 2008-02-29 2008-04-25 Organische Leuchtdiode, flächiges, optisch aktives Element mit einer Kontaktanordnung und Verfahren zur Herstellung einer organischen Leuchtdiode
PCT/DE2009/000217 WO2009106040A1 (de) 2008-02-29 2009-02-16 Organische leuchtdiode, kontaktanordnung und verfahren zur herstellung einer organischen leuchtdiode

Publications (2)

Publication Number Publication Date
CN101965654A CN101965654A (zh) 2011-02-02
CN101965654B true CN101965654B (zh) 2016-04-06

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Country Status (8)

Country Link
US (1) US8791490B2 (enExample)
EP (1) EP2248202A1 (enExample)
JP (1) JP2011513901A (enExample)
KR (1) KR101548400B1 (enExample)
CN (1) CN101965654B (enExample)
DE (1) DE102008020816B4 (enExample)
TW (1) TW200943601A (enExample)
WO (1) WO2009106040A1 (enExample)

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JP5460291B2 (ja) * 2009-12-17 2014-04-02 株式会社カネカ 有機発光装置の製造方法および有機発光装置
KR101671342B1 (ko) * 2010-04-06 2016-11-02 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20120090595A (ko) * 2011-02-08 2012-08-17 삼성전자주식회사 유기 발광 소자
US8963420B2 (en) 2011-08-29 2015-02-24 Lg Display Co., Ltd. Organic electro-luminescence display panel for preventing the display panel from degrading and a method for fabricating the same
DE102012221191B4 (de) * 2012-11-20 2022-03-17 Pictiva Displays International Limited Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013107467A1 (de) * 2013-07-15 2015-01-15 Osram Opto Semiconductors Gmbh Organisches lichtemittierendes Bauteil
DE102014110067A1 (de) * 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014111345B4 (de) * 2014-08-08 2023-05-04 Osram Oled Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102014119538A1 (de) * 2014-12-23 2016-06-23 Osram Oled Gmbh Optoelektronische Baugruppe und Verfahren zum Herstellen einer optoelektronischen Baugruppe
DE102015105756A1 (de) * 2015-04-15 2016-10-20 Osram Oled Gmbh Beleuchtungsanordnung und Verfahren zum Herstellen einer Beleuchtungsanordnung
TWI548131B (zh) * 2015-04-30 2016-09-01 Wisechip Semiconductor Inc Available for organic light emitting diode modules
DE102015114844A1 (de) 2015-09-04 2017-03-09 Osram Oled Gmbh Organische Leuchtdiode und Fahrzeugaußenbeleuchtung
CN106252525B (zh) * 2016-08-26 2018-03-27 京东方科技集团股份有限公司 Oled器件及制作方法、显示面板以及显示装置
FI128685B (en) 2016-09-27 2020-10-15 Teknologian Tutkimuskeskus Vtt Oy Layered device and its manufacturing method
CN114220895B (zh) * 2021-12-15 2024-07-05 安徽格恩半导体有限公司 一种发光器件及其制作方法

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CN1698088A (zh) * 2001-08-30 2005-11-16 剑桥显示技术公司 光电显示器
CN1728898A (zh) * 2005-07-21 2006-02-01 徐良衡 一种有机高分子电致发光显示器件及其制备方法

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JP2002072907A (ja) 2000-08-31 2002-03-12 Sony Corp 表示装置
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JP2002299047A (ja) 2001-03-30 2002-10-11 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置およびその製造方法
US6771328B2 (en) * 2001-07-25 2004-08-03 Lg. Philips Lcd Co., Ltd. Active matrix organic electroluminescent device simplifying a fabricating process and a fabricating method thereof
EP1418634A1 (de) * 2002-11-06 2004-05-12 Samsung SDI Co. Ltd. Display auf Basis organischer, lichtemittierender Bauelemente (OLED) mit niederohmigem Kathodenkontakt
US20040152240A1 (en) * 2003-01-24 2004-08-05 Carlos Dangelo Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits
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JP4380242B2 (ja) * 2003-07-16 2009-12-09 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法及び電子機器
JP2005122910A (ja) 2003-10-14 2005-05-12 Hitachi Ltd 有機elディスプレイ装置および有機el素子の構造体の製造方法
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CN1728898A (zh) * 2005-07-21 2006-02-01 徐良衡 一种有机高分子电致发光显示器件及其制备方法

Also Published As

Publication number Publication date
JP2011513901A (ja) 2011-04-28
EP2248202A1 (de) 2010-11-10
TW200943601A (en) 2009-10-16
US20110198657A1 (en) 2011-08-18
WO2009106040A1 (de) 2009-09-03
KR20100134561A (ko) 2010-12-23
DE102008020816B4 (de) 2019-10-10
CN101965654A (zh) 2011-02-02
KR101548400B1 (ko) 2015-09-04
US8791490B2 (en) 2014-07-29
DE102008020816A1 (de) 2009-09-03

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