Classifications

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  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
  • H10K50/81—Anodes
  • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/8506—Containers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
  • H10K50/82—Cathodes
  • H10K50/824—Cathodes combined with auxiliary electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
  • H10K50/82—Cathodes
  • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/85—Arrangements for extracting light from the devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/88—Terminals, e.g. bond pads
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/30—Devices specially adapted for multicolour light emission
  • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
  • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/12—Passive devices, e.g. 2 terminal devices
  • H01L2924/1204—Optical Diode
  • H01L2924/12044—OLED
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/822—Materials of the light-emitting regions
  • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
  • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/83—Electrodes
  • H10H20/831—Electrodes characterised by their shape

Definitions

• Organic light-emitting diode contact arrangement and method for producing an organic light-emitting diode
• the invention relates to electronic components with a planar, optically active region in general and organic light-emitting diodes in particular.
• Flat in this context means that the optically active element extends substantially further in a first and second spatial direction spanning the first and second surface than in the remaining third spatial direction.
• a problem of conventional light-emitting diodes is the uniform supply of an operating voltage.
• the operating voltage for an organic layer stack is applied to edge regions of two connection layers. While an electrical supply via a metallic connection layer is relatively uncritical due to the good conductivity of metal, a voltage applied to a different type of, in particular transparent, connection layer drops from the edge. This is because such layers have a low transverse conductivity compared to metallic layers and thus do not conduct the supply voltage as well as a metallic connection layer. Together with the operating voltage, the achievable luminance drops, in particular in the case of organic light-emitting diodes, from the edge in the direction of an inner region of a luminous surface.
• the object of the invention is therefore to describe an organic light-emitting diode and a contact arrangement for a planar, optically active element, the one allow improved electrical connection of a layer stack or an optically active element.
• an organic light-emitting diode is described, which allows a uniform radiation over the entire surface. It should also be described a method which is suitable for producing such a light-emitting diode.
• a light-emitting diode which comprises a layer stack, wherein the
• the Light-emitting diode has at least one organic layer for emitting electromagnetic radiation and a first surface and a second surface opposite the first surface.
• the light-emitting diode further comprises an electrically conductive first connection layer, which is arranged on the first surface of the layer stack and electrically connected thereto.
• the light-emitting diode comprises an electrically conductive and for electromagnetic radiation of a characteristic wavelength of the emissive electromagnetic radiation at least predominantly permeable, second connection layer, which is arranged on the second surface of the layer stack and electrically connected thereto.
• the light emitting diode is characterized in that on the side opposite the layer stack of the first
• Terminal layer is arranged one of these electrically insulated, conductive contact structure, the first connection layer having a plurality of recesses and the second connection layer in the region of the plurality of recesses of the first connection layer electrically to the
• Contact structure is connected.
• a current supply is made possible through the first connection layer, for example from one side of a carrier substrate.
• an electrical potential in the region of the plurality of recesses for the second connection layer can be provided.
• the conductive contact structure partially takes on the task of the second connection layer and effectively improves the transverse conductivity.
• the contact structure comprises at least a first insulating layer and an electrically conductive third connecting layer, wherein the first insulating layer is in direct physical contact with the side facing away from the layer stack of the first connection layer and the third connection layer facing away in direct physical contact with the first connection layer Side of the first insulating layer is.
• the insulating layer is designed as an electrically insulating carrier substrate and has a plurality of recesses, which is assigned to the plurality of recesses of the first connection layer.
• the layer stack in the region of the plurality of recesses of the first connection layer in each case has a depression and the second connection layer protrudes into these recesses in order to electrically contact the contact structure.
• a plurality of contact elements is arranged in the layer stack, which is assigned to the plurality of recesses of the first connection layer and electrically connects the second connection layer with the contact structure.
• each of the plurality of contact elements each surrounds an insulating layer which electrically isolates the respective contact element from the layer stack.
• the second connection layer comprises a doped transition metal oxide, in particular indium tin oxide or aluminum doped zinc oxide.
• the second connection layer comprises a thin metal layer having a thickness between 5 and 50 nm, in particular a metal layer having a thickness of 'less than 30 nm.
• a thin metal layer as a second connection layer allows for improved distribution of the operating voltage at the second surface of the layer stack.
• the second connection layer additionally comprises at least one doped transition metal oxide layer, the thin metal layer and the transition metal layer forming a composite structure.
• a terminal layer comprising at least a thin metal layer and at least one transition metal oxide layer
• the transverse conductivity of the second terminal layer can be improved while maintaining acceptable transparency as compared with a pure metal layer.
• sandwich structures with a thin metal layer, which is arranged between two transition metal layers, or a transition metal oxide layer, which is arranged between two thin metal layers.
• the underlying object is further achieved by a contact arrangement for a planar, optically active element having a first surface and a parallel second surface opposite the first surface.
• the contact arrangement for a planar, optically active element having a first Surface and one of the first surface opposite parallel second surface has the contact arrangement:
• a conductive contact structure which is electrically insulated from this, is arranged,
• the first connection layer has a plurality of recesses
• the second connection layer in the region of the plurality of recesses of the first connection layer is electrically connected to the contact structure.
• the contact arrangement can be used, for example, for a light-emitting diode described here. That is, the features specified in connection with the light-emitting diode are also disclosed for the contact arrangement described here, and vice versa.
• Providing a flat, electrically conductive first connection layer and one in the region of the first Forming a layer stack comprising at least one organic layer for emitting electromagnetic radiation on a side opposite the contact structure of the first connection layer, surface application of an electrically conductive and for a predetermined characteristic wavelength of the emissive electromagnetic radiation at least predominantly transparent second connection layer on one side of the layer stack opposite the first connection layer, and - forming a plurality of electrical connections between the second connection layer and the contact structure through the plurality of recesses in the first connection layer.
• an organic light-emitting diode described here can be produced. That is, the features described in connection with the organic light emitting diode are also disclosed in connection with the method and vice versa.
• the shaping of the plurality of recesses in the first connection layer is carried out together with the removal of the parts of the layer stack.
• Parts of the layer stack are removed by the action of electromagnetic radiation, in particular by laser ablation.
• the production can take place without additional chemical or other intermediate steps without contact.
• the layer stack is applied in a structured manner, areas being allocated during the application of the layer stack which are assigned to the plurality of recesses of the first connection layer, so that the layer stack likewise has a plurality of recesses. If areas are omitted during the application of the layer stack, a subsequent introduction of recesses in the
• the layer stack is applied to the first connection layer by means of screen printing technology.
• the use of the screen printing technique allows a simple production of Schichtstapeis with recesses.
• the layer stack is applied by vapor deposition on the first connection layer, wherein the areas to be omitted are covered by means of a shadow mask.
• the application of the layer stack by means of vapor deposition and an associated shadow mask allows a uniform application of a layer stack with recesses.
• a plurality of contact elements is introduced into regions of the layer stack which is assigned to the plurality of recesses in the first connection layer.
• Layer stack can be connected through.
• the light-emitting diode comprises a carrier substrate and the first connection layer and / or the contact structure are applied to the carrier substrate by means of photolithography.
• FIG. 1 shows a cross section through an organic light-emitting diode with additional contact elements according to a
• Figure 2 is a first plan view of an organic compound
• Figure 3 is a second plan view of an organic compound
• FIG. 4 shows a cross section through an organic light-emitting diode with a first contact arrangement according to a further exemplary embodiment
• FIG. 5 shows a cross section through an organic light-emitting diode with a second contact arrangement according to a further exemplary embodiment
• Figure 6 shows different ways of structuring various contact arrangements according to different embodiments and Figure 7 shows an embodiment of a flowchart of a method for producing organic light emitting diodes and other planar components.
• FIG. 1 shows a cross section through an organic light-emitting diode 1 according to one exemplary embodiment.
• the organic light-emitting diode 1 comprises a layer stack 2 which has at least one organic layer 3 for emission of electromagnetic radiation.
• the layer stack 2 may contain further organic and inorganic layers which are necessary or advantageous for the formation of a diode structure. Examples of such layers are layers for hole transport or electron transport, emitter layers, n-doped layers, p-doped layers, buffer layers and intermediate layers, as are known to the person skilled in the art. For reasons of clarity, however, such additional layers are not shown in FIG.
• the layer stack 2 includes a functional area with one or more functional layers of organic materials.
• the functional layers may be formed, for example, as electron-transport layers, electroluminescent layers and / or hole-transport layers.
• electromagnetic radiation 6 having a single wavelength or a range of wavelengths can be generated in the active region by electron and hole injection and recombination. It can by a viewer through
• the functional layers may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules"), or combinations thereof Suitable materials, as well as arrangements and structuring of the functional layer materials, are known to those skilled in the art and are therefore useful this point not further elaborated.
• a layer or an element is arranged or applied "on” or “over” another layer or another element may mean here and below that the one layer or the one element directly in the direct mechanical and / or electrical Contact is arranged on the other layer or the other element.
• the one layer or the one element is arranged indirectly on or above the other layer or the other element. In this case, further layers and / or elements can then be arranged between the one and the other layer.
• the organic light-emitting diode 1 according to FIG. 1 furthermore comprises a first connection layer 4, which forms a first electrode for the power supply of the organic layer 3. For example, it may be at the first
• Terminal layer 4 to act on a metal layer, which provides a very good conductive cathode or anode structure for the organic light emitting diode.
• the first connection layer 4 reflects electromagnetic radiation 6, which is generated in the organic layer 3 during operation of the organic light-emitting diode 1. In this way, a decoupling of electromagnetic radiation in the direction of a surface the organic light emitting diode 1 are concentrated.
• an aluminum layer is suitable for this purpose.
• the first connection layer 4 can be designed as a cathode and thus serve as an electron-injecting material.
• aluminum, barium, indium, silver, gold, magnesium, calcium or lithium, as well as compounds, combinations and alloys thereof, may be advantageous as the cathode material.
• the first connection layer can be structured in electrode subregions.
• the first connection layer 4 can be embodied in the form of parallel-arranged first electrode strips.
• the first connection layer 4 is electrically conductively connected to a conductor track.
• the connection layer 4 can, for example, pass over into a first conductor track or be carried out separately from a first conductor track and be connected to it electrically conductively.
• the organic light-emitting diode 1 further comprises a second connection layer 5.
• the second connection layer 5 forms a second electrode for applying an operating voltage to the surface of the layer stack 2.
• the second connection layer 5 which can be embodied, for example, as an anode and thus can serve as a hole-injecting material, can for example comprise a transparent, electrically conductive oxide or consist of a transparent, conductive oxide.
• Transparent, electrically conductive oxides (“transparent conductive oxides", “TCO” for short) are transparent, conductive materials in which Usually metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or particularly preferably indium tin oxide (ITO).
• binary metal oxygen compounds such as ZnO, SnO 2 or In 2 O 3 also include ternary metal oxygen compounds such as ' Zn 2 SnO 4 , CdSnO 3 , ZnSnO 3 , MgIn 2 O 4 , GaInO 3 , Zn 2 In 2 O 5 or In 4 Sn 3 O 12 or mixtures of different transparent, electrically conductive oxides to the group of TCOs.
• the TCOs do not necessarily have to correspond to a stoichiometric composition and can also be p- or n-doped.
• the second connection layer 5 may be a layer of indium tin oxide.
• Indium tin oxide and other doped transition metal oxides are at least partially transparent to electromagnetic radiation of a specific wavelength, in particular for electromagnetic radiation, in the visible wavelength range, ie from 400 to 800 nm.
• electromagnetic radiation 6 can pass out of the organic light-emitting diode 1 through the second connection layer 5, that is to say upward in FIG. 1.
• the organic light-emitting diode 1 thus forms a surface radiator.
• a material of the first connection layer 4 below the layer stack 2 can be selected independently of its optical properties.
• the second connection layer 5 may alternatively or additionally also comprise metals or / and metal alloys and / or layer sequences, for example so-called IMI layers (ITO / metal / ITO) or be constructed of those which comprise at least one of the materials Ag, Al, Cr, Mo and Au include.
• IMI layers ITO / metal / ITO
• the first connection layer 4 may be formed as an anode and the second connection conductor 5 as a cathode with the materials listed above or combinations thereof.
• the connection layers 4 and 5 may also comprise electrically conductive or semiconducting organic material.
• the organic light-emitting diode according to FIG. 1 has a contact structure 7 which serves to supply an electrical voltage to the second connection layer 5.
• Contact structure 7 is formed in the exemplary embodiment by a third connection layer 8, a first insulation layer 9 and a second insulation layer 10.
• the first insulating layer 9 electrically insulates the third terminal layer 8 from the first terminal layer 4.
• Insulation layer 10 insulates the third connection layer 8 downwards, for example, with respect to a carrier substrate not shown in FIG. If the organic light-emitting diode 1 is arranged on a non-conductive carrier substrate, the insulating layer 10 can also be dispensed with.
• the third connection layer 8 may, for example, be constructed of the same materials as the first connection layer 4 or comprise it.
• the first and second insulating layers 9 and 10 may, for example, contain or be composed of a polymer material or an oxide of a metal or semiconductor material. For example, thin plastic films, silicon dioxide layers or known printed circuit board materials are suitable for this purpose.
• the contact structure 7 furthermore comprises a plurality of contact elements 11.
• the contact elements 11 in the exemplary embodiment illustrated in FIG. 1 are conductive webs which are introduced into the organic layer stack 3.
• the contact elements 11 are through
• the first insulation layer 9 also has recesses for passing through the contact elements 11.
• the contact elements may be, for example, metallic webs with a diameter of about 10 microns.
• a use of highly conductive, non-metallic contact elements is necessary.
• carbon nanotubes or high-temperature superconductors can be formed in the layer stack 2.
• each of the contact elements 11 is surrounded by a third insulation layer 14.
• Forming the contact elements 11 used metal or semiconductor material may be partially oxidized or coated with an additional insulating material to form a third insulating layer 14.
• the first connection layer 4 preferably consists of a metal material which has a very good conductivity.
• the first connection layer 4 may be made of copper or aluminum.
• the second connection layer 5 consists of a largely transparent material.
• the second connection layer 5 consists of a doped transition metal or a very thin metal layer.
• an indium tin oxide layer having a thickness of between 20 and 150 nm, depending on the quality and purity of the material used, has a transmittance of more than 80% in the visible wavelength range.
• composite structures comprising at least a thin metal layer and a transition metal oxide layer can be used.
• an antireflection coating can also be integrated into the second connection layer 5 in order to increase its transparency.
• connection layers 5 have only a relatively low transverse conductivity. Due to the multiple electrical contacting of the second connection layer 5 by the contact elements 11, a drop in an operating voltage along the surface of the organic light-emitting diode 1 can still be limited to a minimum, so that a uniform power supply over the entire surface can be achieved and the impression of a uniformly bright glowing surface arises.
• a conventional encapsulation of the light-emitting diode 1 in the form of a thin-film encapsulation or a cover is not shown in FIG. 1 for reasons of clarity but not excluded.
• the use of a wavelength conversion layer in an encapsulation arrangement is advantageous in order, for example, to avoid differential color aging associated with the use of a plurality of different active regions
• the color location of the luminous impression of the optoelectronic component can be optimized independently of the electronic properties of the radiation-emitting layer sequence.
• the light-emitting diode 1 when using a conversion layer, can emit an overlay of the primary radiation and a secondary radiation. In this case, a part of the primary radiation can traverse the wavelength conversion layer without conversion and from a
• electromagnetic secondary radiation can also emerge from the encapsulation arrangement and be emitted by it.
• a mixed-color luminous impression can be perceived by the superposition of the electromagnetic primary radiation and electromagnetic secondary radiation.
• the mixed-color luminous impression can depend on the relative proportions of the primary radiation and secondary radiation to each other.
• the primary radiation and the secondary radiation may have different wavelength ranges from each other.
• a mixture of, for example, different colors of the electromagnetic radiation 6 can be generated, which leads to a total radiation with the desired, resulting color.
• connection layers 4, 5 and 7, for example thin metal layers, and, if so If there is a flexible carrier substrate, for example a thin plastic film, it is also possible to produce flexible components, in particular flexible organic light-emitting diodes.
• FIGS. 2 and 3 show two plan views of organic light-emitting diodes 1 with differently arranged contact elements 11.
• a plurality of contact elements 11 are distributed uniformly over a surface of the layer stack 2.
• metallic webs of the same diameter have been introduced into the layer stack 2 in the most hexagonal packing.
• Embodiment an alternative arrangement of the contact elements 11 is used.
• the contacting of the second connection layer 5 has been solved by means of a plurality of stochastically arranged contact elements 11, for example by diffusion of conductive materials in the layer stack 2. Both the position of the individual contact elements 11 and their exact shape and their diameter depend here on a random distribution from.
• Germansstege have a diameter of about 100 nm to several micrometers.
• the distance between the individual contact elements 11 is dimensioned such that the impression of a homogeneous luminous surface is created for a viewer of the organic light-emitting diode 1.
• the contact elements 11 shown in FIG. 1 can be produced, for example, by the introduction of additional bars or the partial conversion of a layer stack 2.
• an electrical connection between the second connection layer 5 and the contact structure 7 can also be produced by structured application of different layers. This will be described in more detail below with reference to Figures 4 and 5.
• FIG. 4 shows a contact arrangement 15 according to a further embodiment of the invention.
• the contact arrangement 15 comprises a layer stack 2 with an organic layer 3.
• a first connection layer 4 is arranged on the underside of the organic layer 3.
• a second connection layer 5 is arranged on a surface of the layer stack 2.
• Each 'layers can be constructed from those described with reference to Figure 1, materials or containing them.
• the first connection layer 4 comprises a metal and the second connection layer 5 comprises indium tin oxide.
• the contact structure 7 comprises an insulation layer 9 and a third connection layer 8, which is arranged below the insulation layer 9 and consists for example of a metallic conductor material.
• the layers 8, 9, 4, 3 and 5 form a layer stack, wherein the Organic layer 3 is enclosed between the first terminal layer 4 and the second terminal layer 5 in a sandwich structure which forms, for example, an organic light-emitting diode structure.
• a contact point 17 is shown, which serves for the electrical connection of the second connection layer 5 to the third connection layer 8.
• a recess 16 is present, into which the second connection layer 5 penetrates.
• both the insulation layer 9 and the first connection layer 4 have a recess in this area, so that these layers are interrupted in the region of the depression 16 in the illustrated cross-section.
• the organic layer 3 has a recess which forms the recess 16.
• the second connection layer 5 is applied in a planar manner to the layer stack 2 shown in FIG. 4, so that the second connection layer 5 penetrates into the depression 16 and makes electrical contact with the third connection layer 8.
• the layers 3, 4 and 9 can be removed by micromechanical processing steps, for example by laser ablation in the region of the depression 16, before the second connection layer 5 is applied to the contact arrangement 15.
• FIG. 5 shows a further exemplary embodiment of a contact arrangement 15 for a layer stack 2.
• the contact arrangement 15 comprises a third connection layer 8, an insulation layer 9, a first connection layer 4, an organic layer 3 and a second connection layer 5.
• the layer sequence thus comprises the same layers as FIG in the Figure 4 shown layer sequence and is constructed for example of the same materials.
• the contact arrangement 15 according to FIG. 5 has a depression 16 in the region of a contact point 17.
• the second connection layer 5 penetrates into the recess 16 and thus forms an electrical contact with the third connection layer 8.
• a recess 13 provided in the insulation layer 9 is made smaller in FIG.
• the second connection layer 5 rests outside of the electrical contact with the third connection layer 8 everywhere on the organic layer 3
• the second connection layer 5 according to FIG. 5 rests on the insulation layer 9 on the left and right next to the contact point.
• the electrical insulation between the terminal layers 4 and 8 is improved, so that the probability of occurrence of a short circuit in the region of the contact arrangement is reduced.
• a more uniform electric field can be generated within the layer stack 2, so that a uniformly luminous surface also arises in the region of the contact structure 7.
• FIGS. 1 to 5 the contact elements 11 or contact points 17 have been represented as punctiform, in particular circular, contacts. However, other forms for forming contacts are also possible.
• FIGS. 6A to 6C other possibilities of contacting between the second connection layer 5 and the contact structure 7 are illustrated.
• FIG. 6A cross-shaped contact arrangements 15 are shown.
• Cross-shaped contact arrangements 15 have inter alia the advantage that a relatively large current flow between the connection layer 8 and the second connection layer 5 is made possible.
• Figure SB shows strip-shaped contact arrangements 15. Strip-shaped contact arrangements 15 can be introduced into a layer stack 2 in a particularly simple manner. For example, cuts can be made in the organic layer 3, the first connection layer 4 and the first insulation layer 9.
• FIG. 1 to 5 the contact elements 11 or contact points 17 have been represented as punctiform, in particular circular, contacts. However, other forms for forming contacts are also possible.
• FIGS. 6A to 6C other possibilities of contacting between the second connection layer 5 and the contact structure 7 are illustrated.
• FIG. 6A cross-
• Spider-web-like contacts 15a or honeycomb-shaped contact arrangements 15b allow a regular and uniform supply of the second connection layer 5 with an electrical operating current for operating an organic light-emitting diode or another optically active element.
• a lateral current distribution over the entire luminous area can be effected by a well-conducting contact structure 7 or connecting layer 8. Since these can be made of an arbitrarily thick and non-transparent material, in principle, any desired large areas can be supplied with an operating current with the described arrangements.
• a sandwich structure consisting of a first connection layer 4, the first insulation layer 9 and the third connection layer 8 can be used.
• sandwich structures with two metallic and one insulating layer are easy to manufacture.
• printed conductors can be produced on the upper side or lower side of a conductive material by lithographic means.
• the use of a laminate of two metal layers and a plastic splint therebetween is possible.
• FIG. 7 shows an exemplary embodiment of a method for producing organic light emitting diodes and other planar components having at least one optically active element, in particular inorganic light emitting diodes, planar radiation detectors or solar cells.
• a first connection layer 4 is provided.
• the first connection layer can be provided, for example, on a carrier substrate for the light-emitting diode to be produced.
• a carrier substrate for the light-emitting diode to be produced for example, it may be a ceramic carrier substrate.
• the use of a printed circuit board or other suitable carrier material is possible. If necessary, can on the
• a carrier substrate Use of a carrier substrate are also dispensed with, in particular if the first connection layer 4 is formed, for example, from a metallic layer or foil. Furthermore, a third connection layer 8 is provided, which is electrically insulated from the first connection layer 4 and arranged on this surface.
• the first connection layer 4 and the third connection layer 8 can already be arranged on a carrier substrate or can be subsequently applied to a carrier substrate in the course of the method, for example by means of photolithography or coating. Of course, it is also possible to stick conductive metal foils on a non-conductive carrier substrate or to attach in other ways.
• recesses 12 are formed in the first connection layer 4 and optionally recesses 13 in the insulation layer 9.
• the recesses enable a later applied second connection layer 5, the first 'connecting layer 4 to contact.
• the recesses 12 and 13 can be formed by mechanical, micromechanical or chemical processes in the first connection layer 4 or the first insulation layer 9. For example, holes in the first connection layer 4 and / or the first insulation layer 9 can be drilled, milled, etched or baked.
• a layer stack having at least one organic layer 3 is applied to the first connection layer 4.
• the organic layer stack 2 is applied to an exposed surface of the first connection layer 4, so that a first electrical contact between the first connection layer 4 and the layer stack 2 is produced.
• the layer stack 2 can first be applied in the entire region of the first connection layer 4.
• contact elements 11 can subsequently be introduced into the organic layer 3 or depressions 16 can be formed in the layer stack 2.
• the organic layer 3 it is also possible to apply the organic layer 3 only in the areas which are not associated with any recess 12 or 13 in the first connection layer 4 or insulation layer 9.
• the layer stack 2 is applied in the entire region of the first connection layer 4, for example sputtered on. Subsequently, the parts of the layer stack 2 which are associated with the recesses 12 or 13 of the first connection layer 4 or insulation layer 9 are removed, for example by means of laser ablation.
• the organic layer 3 is applied for example by means of screen printing technology, wherein the areas associated with the recesses 12 and 13 are recessed by the screen printing process. Furthermore, it is also possible to evaporate the layer stacks 2 by means of a vacuum diffusion technique onto the first connection layer 4, the areas allocated to the recesses 12 and 13 being recessed by means of a shadow mask.
• the layer stack 2 instead of the layer stack 2 with the organic layer, another, for example also inorganic, layer stack, for example comprising a semiconductor material, is applied, epitaxially grown or shaped according to other methods known from the prior art.
• another, for example also inorganic, layer stack for example comprising a semiconductor material
• solar cells, radiation detectors for detecting electromagnetic radiation or other electronic components can be produced with a planar optically active region.
• the second connection layer 5 is applied to the layer stack 2.
• an indium-tin oxide layer may be applied to the surface of the
• Layer stack 2 vapor-deposited or grown or deposited on her.
• the second connection layer 5 is thereby applied over a large area in the region of the entire layer stack 2.
• a last step 75 electrical connections between the second connection layer 5 and the third connection layer 8 are formed.
• this step is performed together with the step 74.
• thin metal pins can be introduced into the layer stack 2.
• metal pins made of silver with a diameter of less than 20 nm are suitable for this purpose.
• the steps described above may also be performed in a different order than described.
• the layer sequence can be constructed in the reverse order, that is to say starting from a cover electrode formed by the second connection layer 5, via the layer stack 2, the first one
• Terminal layer 4 the insulation layer 9 and the third terminal layer 8. Furthermore, several of the method steps can be combined in a single step. For example, the recesses 12 and 13 in the first connection layer 4 and the first
• Insulation layer 9 are produced together with the recesses 16 in the layer stack 2.
• the third connection layer 8 has been described as an additional metal or other conductor layer, which is applied in a planar manner to an insulation layer 9.
• individual contact elements 11 can be connected by means of conductors or Jardinverbi ⁇ disme to a power source.

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• 2008
  • 2008-04-25 DE DE102008020816.7A patent/DE102008020816B4/de active Active
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