KR101548400B1 - 유기 발광 다이오드，접촉 장치 및 유기 발광 다이오드의 제조 방법 - Google Patents

유기 발광 다이오드，접촉 장치 및 유기 발광 다이오드의 제조 방법 Download PDF

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KR101548400B1
KR101548400B1 KR1020107018129A KR20107018129A KR101548400B1 KR 101548400 B1 KR101548400 B1 KR 101548400B1 KR 1020107018129 A KR1020107018129 A KR 1020107018129A KR 20107018129 A KR20107018129 A KR 20107018129A KR 101548400 B1 KR101548400 B1 KR 101548400B1
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layer
connection layer
connection
stack
emitting diode
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KR20100134561A (ko
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에르윈 랑
디르크 벡커
토마스 도버틴
마르쿠스 클레인
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오스람 오엘이디 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/88—Terminals, e.g. bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
KR1020107018129A 2008-02-29 2009-02-16 유기 발광 다이오드，접촉 장치 및 유기 발광 다이오드의 제조 방법 Expired - Fee Related KR101548400B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008011867.2 2008-02-29
DE102008011867 2008-02-29
DE102008020816.7 2008-04-25
DE102008020816.7A DE102008020816B4 (de) 2008-02-29 2008-04-25 Organische Leuchtdiode, flächiges, optisch aktives Element mit einer Kontaktanordnung und Verfahren zur Herstellung einer organischen Leuchtdiode

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Publication Number Publication Date
KR20100134561A KR20100134561A (ko) 2010-12-23
KR101548400B1 true KR101548400B1 (ko) 2015-09-04

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Country Link
US (1) US8791490B2 (enExample)
EP (1) EP2248202A1 (enExample)
JP (1) JP2011513901A (enExample)
KR (1) KR101548400B1 (enExample)
CN (1) CN101965654B (enExample)
DE (1) DE102008020816B4 (enExample)
TW (1) TW200943601A (enExample)
WO (1) WO2009106040A1 (enExample)

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JP5460291B2 (ja) * 2009-12-17 2014-04-02 株式会社カネカ 有機発光装置の製造方法および有機発光装置
KR101671342B1 (ko) * 2010-04-06 2016-11-02 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20120090595A (ko) * 2011-02-08 2012-08-17 삼성전자주식회사 유기 발광 소자
US8963420B2 (en) 2011-08-29 2015-02-24 Lg Display Co., Ltd. Organic electro-luminescence display panel for preventing the display panel from degrading and a method for fabricating the same
DE102012221191B4 (de) * 2012-11-20 2022-03-17 Pictiva Displays International Limited Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013107467A1 (de) * 2013-07-15 2015-01-15 Osram Opto Semiconductors Gmbh Organisches lichtemittierendes Bauteil
DE102014110067A1 (de) * 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014111345B4 (de) * 2014-08-08 2023-05-04 Osram Oled Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102014119538A1 (de) * 2014-12-23 2016-06-23 Osram Oled Gmbh Optoelektronische Baugruppe und Verfahren zum Herstellen einer optoelektronischen Baugruppe
DE102015105756A1 (de) * 2015-04-15 2016-10-20 Osram Oled Gmbh Beleuchtungsanordnung und Verfahren zum Herstellen einer Beleuchtungsanordnung
TWI548131B (zh) * 2015-04-30 2016-09-01 Wisechip Semiconductor Inc Available for organic light emitting diode modules
DE102015114844A1 (de) 2015-09-04 2017-03-09 Osram Oled Gmbh Organische Leuchtdiode und Fahrzeugaußenbeleuchtung
CN106252525B (zh) * 2016-08-26 2018-03-27 京东方科技集团股份有限公司 Oled器件及制作方法、显示面板以及显示装置
FI128685B (en) 2016-09-27 2020-10-15 Teknologian Tutkimuskeskus Vtt Oy Layered device and its manufacturing method
CN114220895B (zh) * 2021-12-15 2024-07-05 安徽格恩半导体有限公司 一种发光器件及其制作方法

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JP2005122910A (ja) 2003-10-14 2005-05-12 Hitachi Ltd 有機ｅｌディスプレイ装置および有機ｅｌ素子の構造体の製造方法
JP2005332773A (ja) * 2004-05-21 2005-12-02 Semiconductor Energy Lab Co Ltd 照明装置
US20050270464A1 (en) 2004-06-03 2005-12-08 Satoshi Seo Lighting system

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JP4269195B2 (ja) * 1998-09-25 2009-05-27 ソニー株式会社 発光又は調光素子、及びその製造方法
JP2002072907A (ja) 2000-08-31 2002-03-12 Sony Corp 表示装置
US20060091126A1 (en) 2001-01-31 2006-05-04 Baird Brian W Ultraviolet laser ablative patterning of microstructures in semiconductors
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US6771328B2 (en) * 2001-07-25 2004-08-03 Lg. Philips Lcd Co., Ltd. Active matrix organic electroluminescent device simplifying a fabricating process and a fabricating method thereof
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JP2005122910A (ja) 2003-10-14 2005-05-12 Hitachi Ltd 有機ｅｌディスプレイ装置および有機ｅｌ素子の構造体の製造方法
JP2005332773A (ja) * 2004-05-21 2005-12-02 Semiconductor Energy Lab Co Ltd 照明装置
US20050270464A1 (en) 2004-06-03 2005-12-08 Satoshi Seo Lighting system

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Publication number Publication date
JP2011513901A (ja) 2011-04-28
EP2248202A1 (de) 2010-11-10
CN101965654B (zh) 2016-04-06
TW200943601A (en) 2009-10-16
US20110198657A1 (en) 2011-08-18
WO2009106040A1 (de) 2009-09-03
KR20100134561A (ko) 2010-12-23
DE102008020816B4 (de) 2019-10-10
CN101965654A (zh) 2011-02-02
US8791490B2 (en) 2014-07-29
DE102008020816A1 (de) 2009-09-03

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