CN101946332B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN101946332B
CN101946332B CN2009801053037A CN200980105303A CN101946332B CN 101946332 B CN101946332 B CN 101946332B CN 2009801053037 A CN2009801053037 A CN 2009801053037A CN 200980105303 A CN200980105303 A CN 200980105303A CN 101946332 B CN101946332 B CN 101946332B
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CN
China
Prior art keywords
silicon layer
column
conductivity type
layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2009801053037A
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English (en)
Chinese (zh)
Other versions
CN101946332A (zh
Inventor
舛冈富士雄
新井绅太郎
中村广记
工藤智彦
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Unisantis Electronics Singapore Pte Ltd
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Unisantis Electronics Singapore Pte Ltd
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Publication of CN101946332A publication Critical patent/CN101946332A/zh
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Publication of CN101946332B publication Critical patent/CN101946332B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
CN2009801053037A 2008-02-15 2009-02-16 半导体器件及其制造方法 Expired - Fee Related CN101946332B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2008/052564 WO2009110048A1 (ja) 2008-02-15 2008-02-15 半導体装置及びその製造方法
JPPCT/JP2008/052564 2008-02-15
PCT/JP2009/052560 WO2009102062A1 (ja) 2008-02-15 2009-02-16 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN101946332A CN101946332A (zh) 2011-01-12
CN101946332B true CN101946332B (zh) 2012-02-15

Family

ID=40957091

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801053037A Expired - Fee Related CN101946332B (zh) 2008-02-15 2009-02-16 半导体器件及其制造方法

Country Status (5)

Country Link
EP (1) EP2244304A4 (ko)
KR (1) KR101124137B1 (ko)
CN (1) CN101946332B (ko)
TW (1) TWI423344B (ko)
WO (2) WO2009110048A1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101251787B1 (ko) 2010-12-01 2013-04-08 현대자동차주식회사 변속레인지 검출장치 및 이를 구비한 차량의 변속장치
US9958424B2 (en) * 2012-10-01 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of identifying airborne molecular contamination source
WO2016163045A1 (ja) 2015-04-06 2016-10-13 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Ｓｇｔを有する柱状半導体装置と、その製造方法
US10522557B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Surface topography by forming spacer-like components
JP2022014750A (ja) * 2020-07-07 2022-01-20 キオクシア株式会社 半導体装置およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113661A (ja) * 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP3057661B2 (ja) 1988-09-06 2000-07-04 株式会社東芝 半導体装置
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JP2950558B2 (ja) 1989-11-01 1999-09-20 株式会社東芝 半導体装置
DE19746901C2 (de) * 1997-10-23 1999-08-12 Siemens Ag Verfahren zur Herstellung eines vertikalen MOS-Transistors
DE19746900C2 (de) * 1997-10-23 2002-02-14 Infineon Technologies Ag Vertikaler MOS-Transistor und Verfahren zu dessen Herstellung
JP4078721B2 (ja) * 1998-08-24 2008-04-23 ソニー株式会社 半導体装置とその製造方法
JP3376302B2 (ja) * 1998-12-04 2003-02-10 株式会社東芝 半導体装置及びその製造方法
US6392271B1 (en) * 1999-06-28 2002-05-21 Intel Corporation Structure and process flow for fabrication of dual gate floating body integrated MOS transistors
JP4064607B2 (ja) * 2000-09-08 2008-03-19 株式会社東芝 半導体メモリ装置
US6511884B1 (en) * 2001-10-09 2003-01-28 Chartered Semiconductor Manufacturing Ltd. Method to form and/or isolate vertical transistors
US6461900B1 (en) * 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration
US6605501B1 (en) * 2002-06-06 2003-08-12 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS device with dual gate electrode
JP2004319808A (ja) * 2003-04-17 2004-11-11 Takehide Shirato Ｍｉｓ電界効果トランジスタ及びその製造方法
US6855607B2 (en) * 2003-06-12 2005-02-15 Advanced Micro Devices, Inc. Multi-step chemical mechanical polishing of a gate area in a FinFET
EP1711966B1 (en) * 2004-01-22 2012-02-22 International Business Machines Corporation Vertical fin-fet mos devices
US6949768B1 (en) * 2004-10-18 2005-09-27 International Business Machines Corporation Planar substrate devices integrated with finfets and method of manufacture
JP2007123827A (ja) * 2005-09-30 2007-05-17 Seiko Epson Corp 半導体装置および半導体装置の製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP昭61-13661A 1986.01.21
JP特开2000-68516A 2000.03.03
JP特开2003-179160A 2003.06.27

Also Published As

Publication number Publication date
KR101124137B1 (ko) 2012-03-21
CN101946332A (zh) 2011-01-12
TW200937536A (en) 2009-09-01
EP2244304A1 (en) 2010-10-27
TWI423344B (zh) 2014-01-11
KR20100121669A (ko) 2010-11-18
WO2009110048A1 (ja) 2009-09-11
EP2244304A4 (en) 2013-10-09
WO2009102062A1 (ja) 2009-08-20

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.

Free format text: FORMER OWNER: UNISANTIS ELECTRONICS JAPAN LIMITED

Effective date: 20111115

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20111115

Address after: Peninsular Plaza, Singapore

Applicant after: Unisantis Electronics Singapore Pte. Ltd.

Address before: Tokyo, Japan

Applicant before: Unisantis Electronics Singapore Pte. Ltd.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120215