CN101874302A - 具有至少两个发光半导体组件的装置和用于制备这种装置的方法 - Google Patents

具有至少两个发光半导体组件的装置和用于制备这种装置的方法 Download PDF

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Publication number
CN101874302A
CN101874302A CN200880117743A CN200880117743A CN101874302A CN 101874302 A CN101874302 A CN 101874302A CN 200880117743 A CN200880117743 A CN 200880117743A CN 200880117743 A CN200880117743 A CN 200880117743A CN 101874302 A CN101874302 A CN 101874302A
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CN
China
Prior art keywords
light
optics
damping element
sealing
conductor components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200880117743A
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English (en)
Chinese (zh)
Inventor
F·辛格
T·泽勒
J·赖尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101874302A publication Critical patent/CN101874302A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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CN200880117743A 2007-11-27 2008-11-18 具有至少两个发光半导体组件的装置和用于制备这种装置的方法 Pending CN101874302A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007056925.6 2007-11-27
DE102007056925 2007-11-27
DE102008011153.8A DE102008011153B4 (de) 2007-11-27 2008-02-26 Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen
DE102008011153.8 2008-02-26
PCT/DE2008/001902 WO2009067989A1 (de) 2007-11-27 2008-11-18 Anordnung mit mindestens zwei lichtemittierenden halbleiterbauelementen und verfahren zur herstellung einer solchen anordnung

Publications (1)

Publication Number Publication Date
CN101874302A true CN101874302A (zh) 2010-10-27

Family

ID=40577198

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880117743A Pending CN101874302A (zh) 2007-11-27 2008-11-18 具有至少两个发光半导体组件的装置和用于制备这种装置的方法

Country Status (7)

Country Link
US (1) US8426875B2 (https=)
EP (1) EP2215657B1 (https=)
JP (2) JP5575657B2 (https=)
KR (1) KR101511816B1 (https=)
CN (1) CN101874302A (https=)
DE (1) DE102008011153B4 (https=)
WO (1) WO2009067989A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593336A (zh) * 2011-01-17 2012-07-18 三星Led株式会社 发光器件封装件及其制造方法

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DE102008025923B4 (de) * 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
DE102011003969B4 (de) 2011-02-11 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012105677B4 (de) * 2012-06-28 2016-06-09 Osram Opto Semiconductors Gmbh Leuchtdiodenmodul und Kfz-Scheinwerfer
DE102012212968A1 (de) 2012-07-24 2014-01-30 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element
DE102012212963B4 (de) 2012-07-24 2022-09-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102012113003A1 (de) * 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
JP6186904B2 (ja) * 2013-06-05 2017-08-30 日亜化学工業株式会社 発光装置
DE102013213073A1 (de) * 2013-07-04 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelementes
KR102222580B1 (ko) 2014-07-30 2021-03-05 삼성전자주식회사 발광 소자 패키지 및 이를 포함하는 표시 장치
DE102014116134A1 (de) 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102017107226A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterbauelemente und strahlungsemittierendes Halbleiterbauelement
DE102018111637A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement
DE102018118251B4 (de) 2018-07-27 2020-02-06 Infineon Technologies Ag Chipanordnung und Verfahren zur Herstellung derselben

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593336A (zh) * 2011-01-17 2012-07-18 三星Led株式会社 发光器件封装件及其制造方法
CN102593336B (zh) * 2011-01-17 2016-06-22 三星电子株式会社 发光器件封装件及其制造方法

Also Published As

Publication number Publication date
EP2215657A1 (de) 2010-08-11
US8426875B2 (en) 2013-04-23
JP2011505071A (ja) 2011-02-17
JP6012670B2 (ja) 2016-10-25
JP2014207473A (ja) 2014-10-30
KR101511816B1 (ko) 2015-04-17
JP5575657B2 (ja) 2014-08-20
EP2215657B1 (de) 2013-07-10
DE102008011153A1 (de) 2009-05-28
DE102008011153B4 (de) 2023-02-02
WO2009067989A1 (de) 2009-06-04
KR20100105631A (ko) 2010-09-29
US20110186867A1 (en) 2011-08-04

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Application publication date: 20101027