DE102008011153B4 - Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen - Google Patents

Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen Download PDF

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Publication number
DE102008011153B4
DE102008011153B4 DE102008011153.8A DE102008011153A DE102008011153B4 DE 102008011153 B4 DE102008011153 B4 DE 102008011153B4 DE 102008011153 A DE102008011153 A DE 102008011153A DE 102008011153 B4 DE102008011153 B4 DE 102008011153B4
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DE
Germany
Prior art keywords
semiconductor components
light
emitting semiconductor
encapsulations
emitting
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102008011153.8A
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German (de)
English (en)
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DE102008011153A1 (de
Inventor
Frank Singer
Joachim Reill
Thomas Zeiler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority to DE102008011153.8A priority Critical patent/DE102008011153B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to JP2010535209A priority patent/JP5575657B2/ja
Priority to PCT/DE2008/001902 priority patent/WO2009067989A1/de
Priority to EP08854905.0A priority patent/EP2215657B1/de
Priority to CN200880117743A priority patent/CN101874302A/zh
Priority to US12/745,249 priority patent/US8426875B2/en
Priority to KR1020107014168A priority patent/KR101511816B1/ko
Publication of DE102008011153A1 publication Critical patent/DE102008011153A1/de
Priority to JP2014136894A priority patent/JP6012670B2/ja
Application granted granted Critical
Publication of DE102008011153B4 publication Critical patent/DE102008011153B4/de
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
DE102008011153.8A 2007-11-27 2008-02-26 Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen Active DE102008011153B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102008011153.8A DE102008011153B4 (de) 2007-11-27 2008-02-26 Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen
PCT/DE2008/001902 WO2009067989A1 (de) 2007-11-27 2008-11-18 Anordnung mit mindestens zwei lichtemittierenden halbleiterbauelementen und verfahren zur herstellung einer solchen anordnung
EP08854905.0A EP2215657B1 (de) 2007-11-27 2008-11-18 Anordnung mit mindestens zwei lichtemittierenden halbleiterbauelementen und herstellungsverfahren dafür
CN200880117743A CN101874302A (zh) 2007-11-27 2008-11-18 具有至少两个发光半导体组件的装置和用于制备这种装置的方法
JP2010535209A JP5575657B2 (ja) 2007-11-27 2008-11-18 少なくとも2つの発光半導体素子を備えたデバイスの製造方法
US12/745,249 US8426875B2 (en) 2007-11-27 2008-11-18 Arrangement having at least two light-emitting semiconductor components and method for the production of such an arrangement
KR1020107014168A KR101511816B1 (ko) 2007-11-27 2008-11-18 적어도 두 개의 발광 반도체 소자를 포함한 장치 및 그러한 장치의 제조 방법
JP2014136894A JP6012670B2 (ja) 2007-11-27 2014-07-02 少なくとも2つの発光半導体素子を備えたデバイス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007056925.6 2007-11-27
DE102007056925 2007-11-27
DE102008011153.8A DE102008011153B4 (de) 2007-11-27 2008-02-26 Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen

Publications (2)

Publication Number Publication Date
DE102008011153A1 DE102008011153A1 (de) 2009-05-28
DE102008011153B4 true DE102008011153B4 (de) 2023-02-02

Family

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Family Applications (1)

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DE102008011153.8A Active DE102008011153B4 (de) 2007-11-27 2008-02-26 Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen

Country Status (7)

Country Link
US (1) US8426875B2 (https=)
EP (1) EP2215657B1 (https=)
JP (2) JP5575657B2 (https=)
KR (1) KR101511816B1 (https=)
CN (1) CN101874302A (https=)
DE (1) DE102008011153B4 (https=)
WO (1) WO2009067989A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025923B4 (de) * 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
US8987022B2 (en) * 2011-01-17 2015-03-24 Samsung Electronics Co., Ltd. Light-emitting device package and method of manufacturing the same
DE102011003969B4 (de) 2011-02-11 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012105677B4 (de) * 2012-06-28 2016-06-09 Osram Opto Semiconductors Gmbh Leuchtdiodenmodul und Kfz-Scheinwerfer
DE102012212968A1 (de) 2012-07-24 2014-01-30 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element
DE102012212963B4 (de) 2012-07-24 2022-09-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102012113003A1 (de) * 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
JP6186904B2 (ja) * 2013-06-05 2017-08-30 日亜化学工業株式会社 発光装置
DE102013213073A1 (de) * 2013-07-04 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelementes
KR102222580B1 (ko) 2014-07-30 2021-03-05 삼성전자주식회사 발광 소자 패키지 및 이를 포함하는 표시 장치
DE102014116134A1 (de) 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102017107226A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterbauelemente und strahlungsemittierendes Halbleiterbauelement
DE102018111637A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement
DE102018118251B4 (de) 2018-07-27 2020-02-06 Infineon Technologies Ag Chipanordnung und Verfahren zur Herstellung derselben

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US20030160256A1 (en) 2000-09-01 2003-08-28 General Electric Company Plastic packaging of LED arrays
US20040188699A1 (en) 2003-02-28 2004-09-30 Koujiro Kameyama Semiconductor device and method of manufacture thereof
DE102004021233A1 (de) 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
US20070166853A1 (en) 2004-04-30 2007-07-19 Guenther Ewald K M LED Arrangement
EP1780592A1 (en) 2004-06-30 2007-05-02 Mitsubishi Chemical Corporation Light emitting device, backlight unit for lighting, display unit and display unit
US20060043879A1 (en) 2004-08-31 2006-03-02 Nichia Corporation Light emitting apparatus
US20060197098A1 (en) 2005-03-07 2006-09-07 Citizen Electronics Co. Ltd. Light emitting device and illumination apparatus using said light emitting device
JP2007242856A (ja) 2006-03-08 2007-09-20 Rohm Co Ltd チップ型半導体発光素子
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WO2007114614A1 (en) 2006-03-31 2007-10-11 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same

Also Published As

Publication number Publication date
CN101874302A (zh) 2010-10-27
EP2215657A1 (de) 2010-08-11
US8426875B2 (en) 2013-04-23
JP2011505071A (ja) 2011-02-17
JP6012670B2 (ja) 2016-10-25
JP2014207473A (ja) 2014-10-30
KR101511816B1 (ko) 2015-04-17
JP5575657B2 (ja) 2014-08-20
EP2215657B1 (de) 2013-07-10
DE102008011153A1 (de) 2009-05-28
WO2009067989A1 (de) 2009-06-04
KR20100105631A (ko) 2010-09-29
US20110186867A1 (en) 2011-08-04

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