CN101800221A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN101800221A CN101800221A CN201010119101A CN201010119101A CN101800221A CN 101800221 A CN101800221 A CN 101800221A CN 201010119101 A CN201010119101 A CN 201010119101A CN 201010119101 A CN201010119101 A CN 201010119101A CN 101800221 A CN101800221 A CN 101800221A
- Authority
- CN
- China
- Prior art keywords
- metal part
- metal
- semiconductor device
- resistor
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000009966 trimming Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000003698 laser cutting Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-026503 | 2009-02-06 | ||
JP2009026503A JP2010182954A (ja) | 2009-02-06 | 2009-02-06 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101800221A true CN101800221A (zh) | 2010-08-11 |
CN101800221B CN101800221B (zh) | 2014-11-26 |
Family
ID=42539729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010119101.2A Expired - Fee Related CN101800221B (zh) | 2009-02-06 | 2010-02-03 | 半导体器件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8242580B2 (zh) |
JP (1) | JP2010182954A (zh) |
CN (1) | CN101800221B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701293A (zh) * | 2013-12-10 | 2015-06-10 | 亚德诺半导体集团 | 用于激光微调的相位校正器、集成电路及其方法 |
CN104851883A (zh) * | 2014-02-13 | 2015-08-19 | 精工电子有限公司 | 半导体装置 |
CN106605285A (zh) * | 2014-08-22 | 2017-04-26 | 丰田自动车株式会社 | 电流切断装置 |
CN112687558A (zh) * | 2020-12-05 | 2021-04-20 | 西安翔腾微电子科技有限公司 | 一种改善激光修调多晶硅电阻精度的方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010035608A1 (en) * | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5568334B2 (ja) * | 2010-02-24 | 2014-08-06 | ラピスセミコンダクタ株式会社 | 半導体装置、及びその製造方法 |
JP6586152B2 (ja) * | 2017-12-22 | 2019-10-02 | エイブリック株式会社 | 半導体装置 |
JP7045271B2 (ja) * | 2018-06-28 | 2022-03-31 | エイブリック株式会社 | 半導体装置及び半導体チップ |
US11545480B2 (en) * | 2018-06-29 | 2023-01-03 | Texas Instruments Incorporated | Integrated circuit with single level routing |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076281A (ja) | 2000-08-30 | 2002-03-15 | Seiko Instruments Inc | 半導体装置およびその製造方法 |
JP2003282716A (ja) * | 2002-03-25 | 2003-10-03 | Nec Microsystems Ltd | 半導体装置 |
JP4723827B2 (ja) * | 2004-08-04 | 2011-07-13 | セイコーインスツル株式会社 | 抵抗回路 |
JP4811988B2 (ja) * | 2005-03-23 | 2011-11-09 | セイコーインスツル株式会社 | 半導体装置 |
US7403094B2 (en) * | 2005-04-11 | 2008-07-22 | Texas Instruments Incorporated | Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating |
JP4880939B2 (ja) * | 2005-07-29 | 2012-02-22 | セイコーインスツル株式会社 | 半導体装置 |
-
2009
- 2009-02-06 JP JP2009026503A patent/JP2010182954A/ja not_active Withdrawn
-
2010
- 2010-02-03 CN CN201010119101.2A patent/CN101800221B/zh not_active Expired - Fee Related
- 2010-02-04 US US12/700,124 patent/US8242580B2/en active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701293A (zh) * | 2013-12-10 | 2015-06-10 | 亚德诺半导体集团 | 用于激光微调的相位校正器、集成电路及其方法 |
CN104701293B (zh) * | 2013-12-10 | 2018-04-06 | 亚德诺半导体集团 | 用于激光微调的相位校正器、集成电路及其方法 |
CN104851883A (zh) * | 2014-02-13 | 2015-08-19 | 精工电子有限公司 | 半导体装置 |
CN104851883B (zh) * | 2014-02-13 | 2019-11-19 | 艾普凌科有限公司 | 半导体装置 |
CN106605285A (zh) * | 2014-08-22 | 2017-04-26 | 丰田自动车株式会社 | 电流切断装置 |
CN106605285B (zh) * | 2014-08-22 | 2018-06-22 | 丰田自动车株式会社 | 电流切断装置 |
CN112687558A (zh) * | 2020-12-05 | 2021-04-20 | 西安翔腾微电子科技有限公司 | 一种改善激光修调多晶硅电阻精度的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100200952A1 (en) | 2010-08-12 |
US8242580B2 (en) | 2012-08-14 |
CN101800221B (zh) | 2014-11-26 |
JP2010182954A (ja) | 2010-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101800221B (zh) | 半导体器件 | |
CN1905190B (zh) | 半导体器件 | |
US6140910A (en) | Stabilized polysilicon resistor and a method of manufacturing it | |
CN103890920A (zh) | 半导体装置以及半导体装置的制造方法 | |
CN100539145C (zh) | 电阻电路 | |
US20130295711A1 (en) | Self-powered integrated circuit with multi-junction photovoltaic cell | |
JPH0851103A (ja) | 薄膜の生成方法 | |
CN100543996C (zh) | 半导体器件 | |
CN102683344A (zh) | 具有电阻电路的半导体装置 | |
US20140357047A1 (en) | Semiconductor device and method for manufacturing the same | |
CN106233454A (zh) | 半导体装置及半导体模组 | |
TW201505190A (zh) | 太陽電池用基板及其製造方法 | |
CN106575684A (zh) | 特别用于太阳能电池的在硅基板中产生不同掺杂区的方法 | |
TW201428939A (zh) | 半導體積體電路裝置 | |
CN108470778A (zh) | 太阳能电池钝化膜与背面钝化太阳能电池及其制备方法 | |
CN102874738B (zh) | 红外探测器及其制造方法 | |
CN100361314C (zh) | 半导体装置及其制造方法 | |
JP4736307B2 (ja) | 半導体センサの製造方法 | |
US20120068223A1 (en) | Bidirectional protection component | |
SE500944C2 (sv) | Halvledaranordning med begravd resistans och förfarande för dess tillverkning | |
JPH06268239A (ja) | サージ吸収用ダイオード | |
Park et al. | Or&anization | |
Rand et al. | Development of monolithically integrated silicon‐film modules | |
JPS5999757A (ja) | 半導体集積回路装置の抵抗値調整方法 | |
JPS6245702B2 (zh) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160323 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141126 Termination date: 20210203 |