CN106605285B - 电流切断装置 - Google Patents

电流切断装置 Download PDF

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CN106605285B
CN106605285B CN201580045153.0A CN201580045153A CN106605285B CN 106605285 B CN106605285 B CN 106605285B CN 201580045153 A CN201580045153 A CN 201580045153A CN 106605285 B CN106605285 B CN 106605285B
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electrode
failure
voltage
current
electric current
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CN106605285A (zh
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大西悠季生
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Denso Corp
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Toyota Motor Corp
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    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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Abstract

一种电流切断装置，具有：半导体基板，形成有开关元件；第一电极，形成于所述半导体基板的表面；第二电极，形成于所述表面，且从所述第一电极分离；电阻膜，形成于所述表面，并将所述第一电极与所述第二电极之间连接；端子；接合线，将所述第一电极与所述端子连接；及控制元件，在包含所述电阻膜的电流路径的两端的电压超过阈值时，将所述开关元件接通。所述开关元件连接于所述第一电极和所述第二电极中的至少一方。

Description

电流切断装置
技术领域
(关联申请的相互参照)
本申请是在2014年8月22日提出申请的日本专利申请特愿2014-169471的关联申请，主张基于该日本专利申请的优先权，并将该日本专利申请记载的全部的内容援引作为构成本说明书的内容。
本说明书所公开的技术涉及电流切断装置。
背景技术
日本特开2007-250347号公报公开了使用接合线(以下，有时称为BW)来替代熔丝的电流切断装置。当过电流在BW中流动时，BW会熔断。由此，防止在保护对象中继续流过电流。
发明内容
发明要解决的课题
在本说明书中，提供一种利用BW并能够更可靠地对保护对象进行保护的电流切断装置。
用于解决课题的手段
本申请发明者们创作了使用开关元件和BW的电流切断装置。该电流切断装置具有半导体基板、形成在半导体基板的表面上的电极以及与电极连接的BW。在半导体基板上形成有与表面的电极连接的开关元件。在该电流切断装置的使用时，在表面的电极上连接保护对象的元件、电路。该电流切断装置以电流在保护对象和BW中流动的方式使用。在该电流切断装置中，检测BW的两端的电压。BW的两端的电压与在BW中流动的电流(即，在保护对象中流动的电流)具有一定程度的相关。在该电流切断装置中，在检测的电压超过阈值时，开关元件接通。于是，电流会经由开关元件而在BW中流动，在BW中流动的电流会增加。由此，BW断裂，防止过电流在保护对象中流动。
该电流切断装置利用BW的两端的电压与流向BW的电流相关的情况。由于BW具有电阻，因此BW的两端的电压与在BW中流动的电流存在一定程度的相关。然而，BW具有电感。因此，在BW的两端也会产生因BW的电感而产生的电压(即，将电感乘以在BW中流动的电流的变化率所得到的值)。因此，BW的两端的电压相对于在BW中流动的电流(即，在保护对象中流动的电流)并非具有那么高的相关。因此，在上述的电流切断装置中，无法准确地对应于流向保护对象的电流而切断电流。如果为了使BW的电阻增加而延长BW，则BW的电感也增加，因此通过该方法的话无法解决问题。因此，在本说明书中，提供一种使用开关元件和BW的进一步改良了的电流切断装置。
本说明书公开的电流切断装置具有：半导体基板，形成有开关元件；第一电极，形成于所述半导体基板的表面；第二电极，形成于所述表面，且从所述第一电极分离；电阻膜，形成于所述表面，并将所述第一电极与所述第二电极之间连接；端子；接合线，将所述第一电极与所述端子连接；及控制元件，在包含所述电阻膜的电流路径的两端的电压超过阈值时，将所述开关元件接通。所述开关元件连接于所述第一电极和所述第二电极中的至少一方。
需要说明的是，“包含电阻膜的电流路径”只要包含电阻膜即可，可以是任意的电流路径。因此，“包含电阻膜的电流路径的两端的电压”可以是第一电极与第二电极之间的电压，可以是端子与第二电极之间的电压，也可以是端子和与第二电极连接的其他的端子之间的电压。
该电流切断装置具有不同于BW的电阻膜。与BW相比，能够使电阻膜具有高的电阻。因此，包含电阻膜的电流路径的两端的电压与在电阻膜中流动的电流(即，在保护对象的元件、电路中流动的电流)具有较高的相关。因此，通过基于包含电阻膜的电流路径的两端的电压来控制开关元件，由此能够更可靠地对保护对象进行保护。
附图说明
图1是DC-DC转换器电路60的电路图。
图2是电流切断装置10的纵向剖视图。
图3是电流切断装置10的电路图。
图4是第一变形例的电流切断装置的纵向剖视图。
图5是第一变形例的电流切断装置的电路图。
图6是第二变形例的电流切断装置的纵向剖视图。
图7是第三变形例的电流切断装置的纵向剖视图。
图8是第四变形例的电流切断装置的电路图。
具体实施方式
图1示出具有实施方式的电流切断装置10的DC-DC转换器电路60。DC-DC转换器电路60使通过蓄电池76而施加的电压升压，并将升压后的电压向变换器电路80供给。DC-DC转换器电路60及变换器电路80搭载于混合动力车。变换器电路80向混合动力车的电动机供给电力。
蓄电池76连接在输入配线72与低电位配线70之间。蓄电池76的正极经由熔丝68而与输入配线72连接。蓄电池76的负极与低电位配线70连接。在输入配线72安设线圈78。在输入配线72与低电位配线70之间连接有电容器82。电容器82连接于比线圈78靠熔丝68侧的输入配线72。在隔着线圈78而与熔丝68相反一侧的输入配线72上，并联连接有IGBT94和二极管96。二极管96的阴极和IGBT94的集电极与输入配线72连接。在IGBT94的栅极上连接未图示的栅极控制电路。二极管96的阳极和IGBT94的发射极与电流切断装置10连接。二极管96的阳极和IGBT94的发射极经由电流切断装置10而与低电位配线70连接。在隔着线圈78而与熔丝68相反一侧的输入配线72与输出配线74之间，并联连接有IGBT90和二极管92。二极管92的阴极与输出配线74连接，二极管92的阳极与输入配线72连接。而且，IGBT90的集电极与输出配线74连接，IGBT90的发射极与输入配线72连接。在IGBT90的栅极上连接未图示的栅极控制电路。在输出配线74与低电位配线70之间连接电容器84。输出配线74和低电位配线70与变换器电路80连接。
如图2所示，电流切断装置10具有半导体基板12。在半导体基板12上形成IGBT14。在半导体基板12的上表面形成有电极16、电极18、绝缘膜20、电阻膜22以及绝缘膜24。电极16形成于半导体基板12的上表面。电极16是IGBT14的发射极电极。电极18形成于半导体基板12的上表面。电极18从电极16分离。绝缘膜20形成于电极16与电极18之间的半导体基板12的上表面。在绝缘膜20上形成有电阻膜22。电阻膜22由掺杂有杂质的硅形成。电阻膜22通过绝缘膜20而从半导体基板12绝缘。电阻膜22与电极16及电极18相接。即，通过电阻膜22而电极16与电极18连接。电阻膜22具有规定的电阻。电阻膜22的上表面由绝缘膜24覆盖。在半导体基板12的下表面形成有背面电极26。背面电极26是IGBT14的集电极电极。而且，虽然未图示，但是在半导体基板12的上表面形成有IGBT14的栅极电极用的结合区。该结合区与后述的IC54连接。
电流切断装置10具有汇流条28、BW30、汇流条32、BW34、汇流条36。汇流条28、32、36是端子。汇流条28通过BW30而与电极16连接。而且，如图1所示，汇流条28与IGBT94的发射极及二极管96的阳极连接。如图2所示，汇流条32通过BW34而与电极18连接。而且，如图1所示，汇流条32与低电位配线70连接。如图2所示，背面电极26(即，IGBT14的集电极)与汇流条36连接。如图1所示，汇流条36与输出配线74连接。
电流切断装置10还具有图3所示的驱动电路40。驱动电路40具有与汇流条28连接的输入配线42、与汇流条32连接的输入配线44及与IGBT14的栅极连接的栅极配线46。输入配线42经由熔丝48和滤波电路50而与缓冲电路52连接。输入配线44经由滤波电路50而与缓冲电路52连接。滤波电路50由安设于输入配线42的电阻和连接在输入配线42与输入配线44之间的电容器构成。滤波电路50从输入配线42与输入配线44之间的信号中除去噪声。噪声除去后的输入配线42与输入配线44之间的信号(即，汇流条28与汇流条32之间的电压V1)向缓冲电路52输入。缓冲电路52与IC54连接。缓冲电路52将输入的电压V1调整成适合于IC54的驱动电压的值而向IC54输入。IC54经由栅极电阻56而与IGBT14的栅极连接。IC54根据汇流条28与汇流条32之间的电压V1，来控制IGBT14的栅极电位。
接下来，说明DC-DC转换器电路60的动作。在通常时，电流切断装置10的IGBT14断开。而且，IGBT90、94以IGBT90接通且IGBT94断开的状态与IGBT94接通且IGBT90断开的状态交替反复的方式被控制。DC-DC转换器电路60的动作根据混合动力车的电动机消耗能量的情况(动力运行动作)和该电动机发电的情况(再生动作)而变化。
在动力运行动作中，从蓄电池76向变换器电路80供给电力。在动力运行动作中，当成为IGBT94接通且IGBT90断开的状态时，电流从蓄电池76的正极经由熔丝68、线圈78、IGBT94、电流切断装置10朝向低电位配线70流动。此时，在电流切断装置10内，如图3的箭头A1所示，电流从汇流条28经由BW30、电极16、电阻膜22、电极18及BW34朝向汇流条32流动。
然后，切换成IGBT90接通且IGBT94断开的状态。于是，电流从蓄电池76的正极经由熔丝68、线圈78、二极管92朝向输出配线74流动。而且，线圈78在维持电流的方向上产生感应电动势。因此，在蓄电池76的输出电压重叠了线圈78的感应电动势的电压向输出配线74输出。即，向输出配线74施加比蓄电池76的输出电压高的电压。因此，在动力运行动作中，通过使IGBT90、94的接通断开反复，而向变换器电路80供给高电压。
在再生动作中，从变换器电路80向蓄电池76供给电力，对蓄电池76充电。在再生动作中，当成为IGBT90接通且IGBT94断开的状态时，电流从输出配线74经由IGBT90、线圈78及熔丝68朝向蓄电池76的正极流动。
然后，切换为IGBT94接通且IGBT90断开的状态。于是，线圈78在维持电流的方向上产生感应电动势。因此，电流从低电位配线70经由电流切断装置10、二极管96、线圈78及熔丝68朝向蓄电池76的正极流动。因此，在再生动作中，通过使IGBT90、94的接通断开反复而对蓄电池76充电。
接下来，说明电流切断装置10的动作。如上所述，当电流在IGBT94中流动时，如图3的箭头A1所示，电流在电流切断装置10中流动。因此，在因某些理由而在IGBT94中流动的电流增大时，图3的箭头A1所示的电流也增大。图3所示的IC54对汇流条28与汇流条32之间的电压V1进行监控。当电压V1超过规定的阈值时，IC54使IGBT14的栅极电压上升，使IGBT14接通。于是，如图1、3的箭头A2所示，电流从具有高电位的输出配线74向低电位配线70流动。箭头A2所示的电流是极大的电流。该电流通过汇流条36、IGBT14、电极16、电阻膜22、电极18、BW34及汇流条32。由于箭头A2所示的电流极大，因此当箭头A2所示的电流流动时，IGBT14达到热破坏。而且，由于IGBT14达到热破坏时的冲击而BW34断裂。即，BW34作为熔丝发挥功能。由此，IGBT94被从低电位配线70切断，防止在IGBT94中继续流过高电流。由此，保护DC-DC转换器电路60免于遭受过电流。
另外，在BW34断裂后，从IGBT94朝向电流切断装置10流动的电流向图3所示的驱动电路40的输入配线42流入。于是，熔丝48断裂。由此，防止电流流入IC54，对IC54进行保护。
如以上说明所述，根据电流切断装置10，能够对DC-DC转换器电路60进行保护。在此，电阻膜22的电阻充分大至汇流条28与汇流条32之间的电流路径的电感(例如，BW30、34的电感等)几乎不会影响电压V1的程度。而且，电阻膜22形成于半导体基板12的上表面，因此大致平坦地形成。因此，电阻膜22的电感极低。因此，电压V1与在电阻膜22中流动的电流大致成比例。即，电压V1与在电阻膜22中流动的电流(即，在IGBT94中流动的电流)的相关极高。因此，通过基于电压V1而使IGBT14接通，从而能够可靠地保护DC-DC转换器电路60。而且，通过BW34断裂而防止过电流流向蓄电池76，由此能够防止熔丝68的断裂。
需要说明的是，在上述的实施方式中，IC54根据汇流条28与汇流条32之间的电压V1来控制IGBT14。然而，电压的测定部位只要是包含电阻膜22的电流路径的两端即可，可以是任意的部位。例如，也可以在电极16与电极18之间测定电压。而且，还可以在汇流条28与电极18之间测定电压。而且，还可以在汇流条32与电极16之间测定电压。由于电阻膜22具有比较高的电阻，因此若在包含电阻膜22的电流路径上测定电压，则就能够相对地减小该电流路径的电感对电压的影响。因此，能够测定相对于流向电流路径的电流而具有较高的相关的电压，能够根据电流而可靠地保护DC-DC转换器电路60。
另外，在上述的实施方式中，在电极16上连接IGBT14。然而，如图4所示，也可以在半导体基板12内形成IGBT14，以在电极18上连接IGBT14。这种情况下，电流切断装置10的电路图成为图5所示的结构。这种情况下，在DC-DC转换器的IGBT94中流动的电流也如图5的箭头A3所示在电阻膜22中流动。因此，能够通过包含电阻膜22的电流路径的电压，准确地测定在IGBT94中流动的电流。而且，当IGBT14接通时，电流如图5的箭头A4所示流动。由此，IGBT14达到热破坏，能够使BW34断裂。因此，能够适当地保护DC-DC转换器电路60。而且，如图6所示，也可以在半导体基板12内形成有与电极16相连的IGBT14和与电极18相连的IGBT14。在这样的结构中，也能够适当地保护DC-DC转换器电路60。
另外，在上述的实施方式中，通过BW30将汇流条28与电极16连接。然而，也可以如图7所示，将汇流条28通过焊锡等而与电极16接合。即，汇流条28与电极16的连接构造并不局限于引线接合，也可以采用其他的各种连接构造。
另外，在上述的实施方式中，说明了过电流在DC-DC转换器电路60的下支路的IGBT94中流动时将电流切断的结构。然而，本说明书公开的电流切断装置也能够使用于其他的各种元件的保护。例如，也可以为了切断DC-DC转换器电路60的上支路的IGBT90的过电流而使用电流切断装置。而且，也可以将电流切断装置使用于其他的电路、元件的保护。电流切断装置中，在保护对象的元件、电路中流动的电流会在电阻膜22和BW34中流动，在电阻膜22和BW34的通电时汇流条28会成为比汇流条32高的电位，只要将汇流条36连接于比汇流条32高的电位，就能够对保护对象进行保护。
另外，在上述的实施方式中，在半导体基板12形成有IGBT14。然而，形成于半导体基板12的开关元件也可以是MOSFET等其他的开关元件。
另外，如图2所示，上述的实施方式的电流切断装置10使电流从电阻膜22朝向作为熔丝发挥功能的BW34侧流动。然而，在开关元件由MOSFET等构成且电流能够从半导体基板12的上表面侧向下表面侧流动的情况下，电流的方向可以与实施方式相反。例如，也可以如图8例示的电路那样构成电流切断装置10。在图8的电路中，取代IGBT14而形成有MOSFET102。在图8的电路中，在通常时，如箭头A5所示，电流从BW34朝向保护对象的元件100流动。当如箭头A5所示流动的电流上升为阈值以上时，MOSFET102接通。于是，如箭头A6所示，电流经由BW34和MOSFET102而流动。由此，MOSFET102达到热破坏，BW34断裂。在该结构中，也能够对保护对象的元件100进行保护。
另外，在上述的例子中，在IGBT、MOSFET等开关元件接通时，开关元件达到热破坏，由于热破坏时的冲击而BW34断裂。然而，也可以是由于在开关元件接通时在BW34中流动的电流而BW34熔断。
以上，详细地说明了实施方式，但是它们只不过是例示，并不对权利要求书进行限定。权利要求书记载的技术包含对以上例示的具体例进行各种变形、变更的情况。
本说明书或附图说明的技术要素通过单独或各种组合而发挥技术有用性，并不限定为申请时权利要求记载的组合。而且，本说明书或附图例示的技术是同时实现多个目的的技术，实现其中的1个目的的情况自身具有技术有用性。

Claims (2)

1.一种电流切断装置，其中，具有：
半导体基板，形成有开关元件；
第一电极，形成于所述半导体基板的表面；
第二电极，形成于所述表面，且从所述第一电极分离；
电阻膜，形成于所述表面，并将所述第一电极与所述第二电极之间连接；
端子；
接合线，将所述第一电极与所述端子连接；及
控制元件，在包含所述电阻膜的电流路径的两端的电压超过阈值时，将所述开关元件接通，
所述开关元件连接于所述第一电极和所述第二电极中的至少一方。
2.根据权利要求1所述的电流切断装置，其中，
所述控制元件具有在所述控制元件中流动的电流超过规定值时断线的熔丝。
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CN106605285A (zh) 2017-04-26
US20170279262A1 (en) 2017-09-28
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