JP6168899B2 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
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- JP6168899B2 JP6168899B2 JP2013160097A JP2013160097A JP6168899B2 JP 6168899 B2 JP6168899 B2 JP 6168899B2 JP 2013160097 A JP2013160097 A JP 2013160097A JP 2013160097 A JP2013160097 A JP 2013160097A JP 6168899 B2 JP6168899 B2 JP 6168899B2
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- Prior art keywords
- sense current
- control
- electrode
- protection circuit
- igbt
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- 238000001514 detection method Methods 0.000 claims description 41
- 238000010586 diagram Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
<構成>
図1は、本実施形態に関するパワーモジュールの回路構成の一例を示した図である。図1に示されるように、当該パワーモジュールには、カレントセンス機能を有する(センス電流電極を有する)スイッチング素子(IGBT20)が複数搭載されている。各IGBT20は、制御ICによって動作が制御される。制御ICは、さらにMCU(Micro Control Unit)によって制御される。
図5は、図4に対応するパワーモジュールの回路図であり、ESDの電流経路を示す図である。
図6は、変形例であるパワーモジュールの回路図であり、ESDの電流経路を示す図である。
本実施形態によれば、スイッチング素子としてのIGBT20と、IGBT20を制御する制御IC100とを備える。
Claims (5)
- スイッチング素子と、
前記スイッチング素子を制御する制御ICとを備え、
前記制御ICは、
前記スイッチング素子のゲート電圧を制御する制御部と、
前記制御部とは電気的に独立し、かつ、前記制御ICのグラウンドに接地された保護回路とを備え、
前記保護回路が、前記スイッチング素子のゲート電極および前記スイッチング素子の主電流電極には接続されず、前記スイッチング素子のセンス電流電極には接続されていることを特徴とする、
パワーモジュール。 - 前記制御ICが、前記主電流電極または前記センス電流電極に流れる電流値を検出可能な検出部をさらに備え、
前記検出部が、前記主電流電極または前記センス電流電極に流れる電流値が閾値を超えた場合、オフ指令信号を出力し、
前記制御部が、前記オフ指令信号に基づいて前記ゲート電圧を制御することを特徴とする、
請求項1に記載のパワーモジュール。 - 前記主電流電極に接続された主電流端子、前記センス電流電極に接続されたセンス電流端子、および、前記検出部が電流値を検出するための検出端子を、モジュール外部から個別に接続可能に備えることを特徴とする、
請求項2に記載のパワーモジュール。 - 前記センス電流電極は、分岐した配線により前記保護回路と前記センス電流端子とに接続されていることを特徴とする、
請求項3に記載のパワーモジュール。 - 前記センス電流電極が、前記保護回路を経由して前記センス電流端子に接続されていることを特徴とする、
請求項3に記載のパワーモジュール。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013160097A JP6168899B2 (ja) | 2013-08-01 | 2013-08-01 | パワーモジュール |
DE102014211462.4A DE102014211462B4 (de) | 2013-08-01 | 2014-06-16 | Leistungsmodul |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013160097A JP6168899B2 (ja) | 2013-08-01 | 2013-08-01 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015033186A JP2015033186A (ja) | 2015-02-16 |
JP6168899B2 true JP6168899B2 (ja) | 2017-07-26 |
Family
ID=52342116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013160097A Active JP6168899B2 (ja) | 2013-08-01 | 2013-08-01 | パワーモジュール |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6168899B2 (ja) |
DE (1) | DE102014211462B4 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017187542A1 (ja) * | 2016-04-27 | 2017-11-02 | 三菱電機株式会社 | 電動機駆動装置および空気調和機 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5563759A (en) * | 1995-04-11 | 1996-10-08 | International Rectifier Corporation | Protected three-pin mosgated power switch with separate input reset signal level |
EP0757442A3 (en) | 1995-07-31 | 1998-12-30 | Delco Electronics Corporation | Ignition coil driver module |
JP4493865B2 (ja) * | 2001-02-19 | 2010-06-30 | 三菱電機株式会社 | 半導体装置 |
JP4421849B2 (ja) * | 2003-07-22 | 2010-02-24 | 株式会社デンソー | 入力保護回路 |
JP2008042950A (ja) * | 2006-08-01 | 2008-02-21 | Mitsubishi Electric Corp | 電力変換装置 |
JP5361788B2 (ja) * | 2010-04-20 | 2013-12-04 | 三菱電機株式会社 | パワーモジュール |
JP2011103483A (ja) * | 2011-01-24 | 2011-05-26 | Toyota Motor Corp | 電流検出機能を有する半導体装置 |
-
2013
- 2013-08-01 JP JP2013160097A patent/JP6168899B2/ja active Active
-
2014
- 2014-06-16 DE DE102014211462.4A patent/DE102014211462B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
DE102014211462A1 (de) | 2015-02-05 |
DE102014211462B4 (de) | 2022-03-17 |
JP2015033186A (ja) | 2015-02-16 |
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