WO2016027563A1 - 電流遮断装置 - Google Patents
電流遮断装置 Download PDFInfo
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- WO2016027563A1 WO2016027563A1 PCT/JP2015/068093 JP2015068093W WO2016027563A1 WO 2016027563 A1 WO2016027563 A1 WO 2016027563A1 JP 2015068093 W JP2015068093 W JP 2015068093W WO 2016027563 A1 WO2016027563 A1 WO 2016027563A1
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- Prior art keywords
- electrode
- current
- igbt
- voltage
- resistance film
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- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000001172 regenerating effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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Definitions
- the technology disclosed in this specification relates to a current interrupt device.
- Japanese Patent Application Laid-Open No. 2007-250347 discloses a current interrupting device that uses a bonding wire (hereinafter sometimes referred to as BW) as an alternative to a fuse. When overcurrent flows through BW, BW is blown out. This prevents further current from flowing through the protection target.
- BW bonding wire
- This current interrupt device includes a semiconductor substrate, an electrode formed on the surface of the semiconductor substrate, and a BW connected to the electrode. A switching element connected to the electrode on the surface is formed on the semiconductor substrate.
- This current interrupting device is used so that a current flows between the protection target and the BW.
- the voltage across the BW is detected.
- the voltage across BW has a certain degree of correlation with the current flowing through BW (that is, the current flowing through the protection target).
- the switching element is turned on when the detected voltage exceeds a threshold value. Then, a current flows through BW via the switching element, and the current flowing through BW increases. This prevents the BW from breaking and overcurrent from flowing through the protection target.
- This current interrupt device utilizes the fact that the voltage across the BW correlates with the current flowing through the BW. Since BW has resistance, the voltage across BW correlates to some extent with the current flowing through BW. However, BW has an inductance. For this reason, a voltage generated by the inductance of BW (that is, a value obtained by multiplying the inductance by the rate of change of the current flowing through BW) is also generated at both ends of BW. For this reason, the voltage across the BW does not have a very high correlation with the current flowing through the BW (that is, the current flowing through the protection target). For this reason, in said electric current interruption apparatus, an electric current cannot be interrupted
- the current interrupting device disclosed in this specification includes a semiconductor substrate on which a switching element is formed, a first electrode formed on a surface of the semiconductor substrate, and formed on the surface.
- a second electrode that is separated, a resistance film that is formed on the surface and connects between the first electrode and the second electrode, a terminal, and a bonding that connects the first electrode and the terminal
- a control element is provided to turn on the switching element when the voltage across the wire and the current path including the resistance film exceeds a threshold value.
- the switching element is connected to at least one of the first electrode and the second electrode.
- the “current path including the resistance film” may be any current path as long as the resistance film is included. Therefore, the “voltage across the current path including the resistance film” may be a voltage between the first electrode and the second electrode, or a voltage between the terminal and the second electrode, The voltage between the terminal and another terminal connected to the second electrode may be used.
- This current interrupt device has a resistance film separately from BW.
- the resistance film can have a higher resistance than BW. Therefore, the voltage across the current path including the resistance film has a high correlation with the current flowing through the resistance film (that is, the current flowing through the element or circuit to be protected). For this reason, it is possible to more reliably protect the protection target by controlling the switching element based on the voltage across the current path including the resistance film.
- FIG. 4 is a circuit diagram of a DC-DC converter circuit 60.
- FIG. 1 is a longitudinal sectional view of a current interrupt device 10.
- FIG. 1 shows a DC-DC converter circuit 60 having the current interrupt device 10 of the embodiment.
- the DC-DC converter circuit 60 boosts the voltage applied by the battery 76 and supplies the boosted voltage to the inverter circuit 80.
- the DC-DC converter circuit 60 and the inverter circuit 80 are mounted on the hybrid car.
- the inverter circuit 80 supplies power to the motor of the hybrid car.
- the battery 76 is connected between the input wiring 72 and the low potential wiring 70.
- the positive electrode of the battery 76 is connected to the input wiring 72 via the fuse 68.
- the negative electrode of the battery 76 is connected to the low potential wiring 70.
- a coil 78 is interposed in the input wiring 72.
- a capacitor 82 is connected between the input wiring 72 and the low potential wiring 70.
- the capacitor 82 is connected to the input wiring 72 closer to the fuse 68 than the coil 78.
- An IGBT 94 and a diode 96 are connected in parallel to the input wiring 72 on the opposite side of the fuse 68 across the coil 78.
- the cathode of the diode 96 and the collector of the IGBT 94 are connected to the input wiring 72.
- a gate control circuit (not shown) is connected to the gate of the IGBT 94.
- the anode of the diode 96 and the emitter of the IGBT 94 are connected to the current interrupt device 10.
- the anode of the diode 96 and the emitter of the IGBT 94 are connected to the low potential wiring 70 via the current interrupt device 10.
- An IGBT 90 and a diode 92 are connected in parallel between the input wiring 72 and the output wiring 74 on the opposite side of the fuse 68 across the coil 78.
- the cathode of the diode 92 is connected to the output wiring 74, and the anode of the diode 92 is connected to the input wiring 72.
- the collector of the IGBT 90 is connected to the output wiring 74, and the emitter of the IGBT 90 is connected to the input wiring 72.
- a gate control circuit (not shown) is connected to the gate of the IGBT 90.
- a capacitor 84 is connected between the output wiring 74 and the low potential wiring 70.
- the output wiring 74 and the low potential wiring 70 are connected to the inverter circuit 80.
- the current interrupt device 10 has a semiconductor substrate 12.
- An IGBT 14 is formed on the semiconductor substrate 12.
- An electrode 16, an electrode 18, an insulating film 20, a resistance film 22, and an insulating film 24 are formed on the upper surface of the semiconductor substrate 12.
- the electrode 16 is formed on the upper surface of the semiconductor substrate 12.
- the electrode 16 is an emitter electrode of the IGBT 14.
- the electrode 18 is formed on the upper surface of the semiconductor substrate 12.
- the electrode 18 is separated from the electrode 16.
- the insulating film 20 is formed on the upper surface of the semiconductor substrate 12 between the electrode 16 and the electrode 18.
- a resistance film 22 is formed on the insulating film 20.
- the resistance film 22 is made of silicon doped with impurities.
- the resistance film 22 is insulated from the semiconductor substrate 12 by the insulating film 20.
- the resistance film 22 is in contact with the electrode 16 and the electrode 18. That is, the electrode 16 and the electrode 18 are connected by the resistance film 22.
- the resistance film 22 has a predetermined resistance.
- the upper surface of the resistance film 22 is covered with an insulating film 24.
- a back electrode 26 is formed on the lower surface of the semiconductor substrate 12.
- the back electrode 26 is a collector electrode of the IGBT 14.
- a bonding pad for the gate electrode of the IGBT 14 is formed on the upper surface of the semiconductor substrate 12. This bonding pad is connected to an IC 54 described later.
- the current interrupt device 10 has a bus bar 28, BW 30, bus bar 32, BW 34, and bus bar 36.
- the bus bars 28, 32, and 36 are terminals.
- the bus bar 28 is connected to the electrode 16 by the BW 30.
- the bus bar 28 is connected to the emitter of the IGBT 94 and the anode of the diode 96.
- the bus bar 32 is connected to the electrode 18 by a BW 34.
- the bus bar 32 is connected to the low potential wiring 70.
- the back electrode 26 that is, the collector of the IGBT 14
- the bus bar 36 is connected to the output wiring 74.
- the current interrupt device 10 further includes a drive circuit 40 shown in FIG.
- the drive circuit 40 includes an input wiring 42 connected to the bus bar 28, an input wiring 44 connected to the bus bar 32, and a gate wiring 46 connected to the gate of the IGBT 14.
- the input wiring 42 is connected to the buffer circuit 52 through the fuse 48 and the filter circuit 50.
- the input wiring 44 is connected to the buffer circuit 52 through the filter circuit 50.
- the filter circuit 50 includes a resistor interposed in the input wiring 42 and a capacitor connected between the input wiring 42 and the input wiring 44.
- the filter circuit 50 removes noise from the signal between the input wiring 42 and the input wiring 44.
- a signal between the input wiring 42 and the input wiring 44 after noise removal (that is, the voltage V1 between the bus bar 28 and the bus bar 32) is input to the buffer circuit 52.
- the buffer circuit 52 is connected to the IC 54.
- the buffer circuit 52 adjusts the input voltage V1 to a value suitable for the driving voltage of the IC 54 and inputs the adjusted voltage V1 to the IC 54.
- the IC 54 is connected to the gate of the IGBT 14 via the gate resistor 56.
- the IC 54 controls the gate potential of the IGBT 14 in accordance with the voltage V1 between the bus bar 28 and the bus bar 32.
- the operation of the DC-DC converter circuit 60 will be described.
- the IGBT 14 of the current interrupt device 10 is off.
- the IGBTs 90 and 94 are controlled so that the state in which the IGBT 90 is turned on and the IGBT 94 is turned off and the state in which the IGBT 94 is turned on and the IGBT 90 is turned off are alternately repeated.
- the operation of the DC-DC converter circuit 60 varies depending on whether the motor of the hybrid car is consuming energy (powering operation) or when the motor is generating power (regenerative operation).
- the IGBT 90 is switched on and the IGBT 94 is switched off. Then, a current flows from the positive electrode of the battery 76 to the output wiring 74 via the fuse 68, the coil 78, and the diode 92.
- the coil 78 generates an induced electromotive force in a direction in which the current is maintained. Therefore, a voltage obtained by superimposing the induced electromotive force of the coil 78 on the output voltage of the battery 76 is output to the output wiring 74. That is, a voltage higher than the output voltage of the battery 76 is applied to the output wiring 74. Therefore, in the power running operation, a high voltage is supplied to the inverter circuit 80 by repeatedly turning on and off the IGBTs 90 and 94.
- the IGBT 94 is turned on and the IGBT 90 is turned off.
- the coil 78 generates an induced electromotive force in a direction in which the current is maintained. Therefore, a current flows from the low potential wiring 70 toward the positive electrode of the battery 76 via the current interrupt device 10, the diode 96, the coil 78, and the fuse 68. Therefore, in the regenerative operation, the battery 76 is charged by repeatedly turning on and off the IGBTs 90 and 94.
- the operation of the current interrupt device 10 will be described.
- a current flows through the IGBT 94
- a current flows through the current interrupt device 10 as indicated by an arrow A1 in FIG. Therefore, if the current flowing through the IGBT 94 increases for some reason, the current indicated by the arrow A1 in FIG. 3 also increases.
- the IC 54 shown in FIG. 3 monitors the voltage V1 between the bus bar 28 and the bus bar 32. When the voltage V1 exceeds a predetermined threshold, the IC 54 increases the gate voltage of the IGBT 14 and turns on the IGBT 14. Then, current flows from the output wiring 74 having a high potential to the low potential wiring 70 as indicated by an arrow A2 in FIGS.
- the current indicated by the arrow A2 is a very large current. This current passes through the bus bar 36, the IGBT 14, the electrode 16, the resistance film 22, the electrode 18, the BW 34, and the bus bar 32. Since the current indicated by the arrow A2 is extremely large, when the current indicated by the arrow A2 flows, the IGBT 14 is thermally destroyed. Further, the BW 34 is broken by an impact when the IGBT 14 is thermally destroyed. That is, the BW 34 functions as a fuse. As a result, the IGBT 94 is disconnected from the low-potential wiring 70 and a high current is prevented from flowing to the IGBT 94 any more. As a result, the DC-DC converter circuit 60 is protected from overcurrent.
- the DC-DC converter circuit 60 can be protected.
- the resistance of the resistance film 22 is sufficiently large such that the influence of the inductance of the current path between the bus bar 28 and the bus bar 32 (for example, the inductance of the BWs 30 and 34) hardly appears in the voltage V1.
- the resistance film 22 is formed on the upper surface of the semiconductor substrate 12, it is formed substantially flat. For this reason, the inductance of the resistance film 22 is extremely low.
- the voltage V ⁇ b> 1 is substantially proportional to the current flowing through the resistance film 22. That is, the correlation between the voltage V1 and the current flowing through the resistance film 22 (that is, the current flowing through the IGBT 94) is extremely high.
- the DC-DC converter circuit 60 can be reliably protected by turning on the IGBT 14 based on the voltage V1. Further, since the BW 34 is broken, it is possible to prevent an overcurrent from flowing through the battery 76 and to prevent the fuse 68 from being broken.
- the IC 54 controls the IGBT 14 according to the voltage V1 between the bus bar 28 and the bus bar 32.
- the voltage measurement location may be any location as long as it is at both ends of the current path including the resistance film 22.
- the voltage may be measured between the electrode 16 and the electrode 18. Further, the voltage may be measured between the bus bar 28 and the electrode 18. Further, the voltage may be measured between the bus bar 32 and the electrode 16. Since the resistance film 22 has a relatively high resistance, if the voltage is measured in the current path including the resistance film 22, the influence of the inductance of the current path on the voltage can be relatively reduced. Therefore, a voltage having a high correlation with the current flowing through the current path can be measured, and the DC-DC converter circuit 60 can be reliably protected according to the current.
- the IGBT 14 is connected to the electrode 16.
- the IGBT 14 may be formed in the semiconductor substrate 12 so that the IGBT 14 is connected to the electrode 18.
- the circuit diagram of the current interrupt device 10 is configured as shown in FIG. Even in this case, the current flowing through the IGBT 94 of the DC-DC converter flows through the resistance film 22 as indicated by an arrow A3 in FIG. Therefore, the current flowing through the IGBT 94 can be accurately measured by the voltage of the current path including the resistance film 22. Further, when the IGBT 14 is turned on, a current flows as shown by an arrow A4 in FIG. As a result, the IGBT 14 is thermally destroyed, and the BW 34 can be broken.
- the DC-DC converter circuit 60 can be appropriately protected. As shown in FIG. 6, an IGBT 14 connected to the electrode 16 and an IGBT 14 connected to the electrode 18 may be formed in the semiconductor substrate 12. Even with such a configuration, the DC-DC converter circuit 60 can be appropriately protected.
- the bus bar 28 is connected to the electrode 16 by the BW 30.
- the bus bar 28 may be joined to the electrode 16 by solder or the like. That is, the connection structure between the bus bar 28 and the electrode 16 is not limited to wire bonding, and other various connection structures can be employed.
- the current interrupt device disclosed in this specification can be used to protect various other elements.
- a current interrupt device may be used to interrupt the overcurrent of the IGBT 90 in the upper arm of the DC-DC converter circuit 60.
- a current interrupt device may be used for protecting other circuits and elements.
- the current flowing through the element or circuit to be protected flows through the resistance film 22 and the BW 34.
- the bus bar 28 has a higher potential than the bus bar 32, and the bus bar 36 If it is connected to a potential higher than that of the bus bar 32, the protection target can be protected.
- the IGBT 14 is formed on the semiconductor substrate 12.
- the switching element formed on the semiconductor substrate 12 may be another switching element such as a MOSFET.
- the current interrupt device 10 of the above-described embodiment is configured such that a current flows from the resistance film 22 toward the BW 34 functioning as a fuse.
- the switching element is configured by a MOSFET or the like and a current can flow from the upper surface side to the lower surface side of the semiconductor substrate 12, the direction of the current may be opposite to that of the embodiment.
- the current interrupt device 10 may be configured like the circuit illustrated in FIG. In the circuit of FIG. 8, a MOSFET 102 is formed instead of the IGBT 14.
- current normally flows from the BW 34 toward the protection target element 100 as indicated by an arrow A5. When the flowing current rises above the threshold value as shown by arrow A5, MOSFET 102 is turned on.
- the switching element such as IGBT or MOSFET
- the switching element is thermally destroyed, and the BW 34 is broken due to an impact at the time of the thermal destruction.
- the BW 34 may be melted by a current flowing through the BW 34 when the switching element is turned on.
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Abstract
Description
本出願は、2014年8月22日に出願された日本特許出願特願2014-169471の関連出願であり、この日本特許出願に基づく優先権を主張するものであり、この日本特許出願に記載された全ての内容を、本明細書を構成するものとして援用する。
本明細書または図面に説明した技術要素は、単独あるいは各種の組み合わせによって技術有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの1つの目的を達成すること自体で技術有用性を持つものである。
Claims (2)
- 電流遮断装置であって、
スイッチング素子が形成されている半導体基板と、
前記半導体基板の表面に形成されている第1電極と、
前記表面に形成されており、前記第1電極から分離されている第2電極と、
前記表面に形成されており、前記第1電極と前記第2電極の間を接続する抵抗膜と、
端子と、
前記第1電極と前記端子とを接続するボンディングワイヤと、
前記抵抗膜を含む電流経路の両端の電圧が閾値を超えたときに、前記スイッチング素子をオンする制御素子、
を有し、
前記スイッチング素子が、前記第1電極と前記第2電極の少なくとも一方に接続されている電流遮断装置。 - 前記制御素子が、前記制御素子に流れる電流が所定値を超えたときに断線するヒューズを有する請求項1の電流遮断装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112015003836.1T DE112015003836B4 (de) | 2014-08-22 | 2015-06-23 | Stromunterbrecher |
KR1020177007362A KR101904682B1 (ko) | 2014-08-22 | 2015-06-23 | 전류 차단 장치 |
US15/503,739 US10348081B2 (en) | 2014-08-22 | 2015-06-23 | Current breaker |
CN201580045153.0A CN106605285B (zh) | 2014-08-22 | 2015-06-23 | 电流切断装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2014169471A JP6222002B2 (ja) | 2014-08-22 | 2014-08-22 | 電流遮断装置 |
JP2014-169471 | 2014-08-22 |
Publications (1)
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WO2016027563A1 true WO2016027563A1 (ja) | 2016-02-25 |
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ID=55350515
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PCT/JP2015/068093 WO2016027563A1 (ja) | 2014-08-22 | 2015-06-23 | 電流遮断装置 |
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US (1) | US10348081B2 (ja) |
JP (1) | JP6222002B2 (ja) |
KR (1) | KR101904682B1 (ja) |
CN (1) | CN106605285B (ja) |
DE (1) | DE112015003836B4 (ja) |
WO (1) | WO2016027563A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110998777A (zh) * | 2017-08-30 | 2020-04-10 | 三菱电机株式会社 | 功率转换装置 |
Families Citing this family (1)
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JP6790908B2 (ja) * | 2017-02-23 | 2020-11-25 | 株式会社デンソー | 半導体装置 |
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JP2005353992A (ja) * | 2004-06-14 | 2005-12-22 | Sanyo Electric Co Ltd | 化合物半導体装置およびその製造方法 |
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2015
- 2015-06-23 DE DE112015003836.1T patent/DE112015003836B4/de not_active Expired - Fee Related
- 2015-06-23 WO PCT/JP2015/068093 patent/WO2016027563A1/ja active Application Filing
- 2015-06-23 CN CN201580045153.0A patent/CN106605285B/zh not_active Expired - Fee Related
- 2015-06-23 KR KR1020177007362A patent/KR101904682B1/ko active IP Right Grant
- 2015-06-23 US US15/503,739 patent/US10348081B2/en active Active
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JPH06139915A (ja) * | 1992-10-23 | 1994-05-20 | Rohm Co Ltd | 過電圧過電流に対する保護装置 |
JP2001015000A (ja) * | 1999-04-26 | 2001-01-19 | Sanyo Electric Co Ltd | 電子部品の製造方法及び電子部品 |
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Also Published As
Publication number | Publication date |
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DE112015003836B4 (de) | 2021-08-26 |
JP6222002B2 (ja) | 2017-11-01 |
US20170279262A1 (en) | 2017-09-28 |
CN106605285B (zh) | 2018-06-22 |
JP2016046092A (ja) | 2016-04-04 |
CN106605285A (zh) | 2017-04-26 |
US10348081B2 (en) | 2019-07-09 |
DE112015003836T5 (de) | 2017-05-18 |
KR20170042756A (ko) | 2017-04-19 |
KR101904682B1 (ko) | 2018-10-04 |
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