JP6222002B2 - 電流遮断装置 - Google Patents
電流遮断装置 Download PDFInfo
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- JP6222002B2 JP6222002B2 JP2014169471A JP2014169471A JP6222002B2 JP 6222002 B2 JP6222002 B2 JP 6222002B2 JP 2014169471 A JP2014169471 A JP 2014169471A JP 2014169471 A JP2014169471 A JP 2014169471A JP 6222002 B2 JP6222002 B2 JP 6222002B2
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- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 239000003990 capacitor Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000001172 regenerating effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H01H85/02—Details
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- H01L2924/0001—Technical content checked by a classifier
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- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
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Description
本明細書または図面に説明した技術要素は、単独あるいは各種の組み合わせによって技術有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの1つの目的を達成すること自体で技術有用性を持つものである。
12:半導体基板
16、18:電極
20:絶縁膜
22:抵抗膜
24:絶縁膜
26:裏面電極
28、32、36:バスバー
30、34:ボンディングワイヤ
40:駆動回路
42、44:入力配線
46:ゲート配線
48:ヒューズ
50:フィルタ回路
52:バッファ回路
56:ゲート抵抗
60:DC−DCコンバータ回路
68:ヒューズ
70:低電位配線
72:入力配線
74:出力配線
76:バッテリ
78:コイル
80:インバータ回路
82:コンデンサ
84:コンデンサ
90、94:IGBT
92、96:ダイオード
Claims (2)
- 電流遮断装置であって、
スイッチング素子が形成されている半導体基板と、
前記半導体基板の表面に形成されている第1電極と、
前記表面に形成されており、前記第1電極から分離されている第2電極と、
前記表面に形成されており、前記第1電極と前記第2電極の間を接続する抵抗膜と、
端子と、
前記第1電極と前記端子とを接続するボンディングワイヤと、
前記抵抗膜を含む電流経路の両端の電圧が閾値を超えたときに、前記スイッチング素子をオンする制御素子、
を有し、
前記スイッチング素子が、前記第1電極と前記第2電極の少なくとも一方に接続されている電流遮断装置。 - 前記制御素子が、前記制御素子に流れる電流が所定値を超えたときに断線するヒューズを有する請求項1の電流遮断装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014169471A JP6222002B2 (ja) | 2014-08-22 | 2014-08-22 | 電流遮断装置 |
US15/503,739 US10348081B2 (en) | 2014-08-22 | 2015-06-23 | Current breaker |
KR1020177007362A KR101904682B1 (ko) | 2014-08-22 | 2015-06-23 | 전류 차단 장치 |
PCT/JP2015/068093 WO2016027563A1 (ja) | 2014-08-22 | 2015-06-23 | 電流遮断装置 |
DE112015003836.1T DE112015003836B4 (de) | 2014-08-22 | 2015-06-23 | Stromunterbrecher |
CN201580045153.0A CN106605285B (zh) | 2014-08-22 | 2015-06-23 | 电流切断装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014169471A JP6222002B2 (ja) | 2014-08-22 | 2014-08-22 | 電流遮断装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016046092A JP2016046092A (ja) | 2016-04-04 |
JP6222002B2 true JP6222002B2 (ja) | 2017-11-01 |
Family
ID=55350515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014169471A Expired - Fee Related JP6222002B2 (ja) | 2014-08-22 | 2014-08-22 | 電流遮断装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10348081B2 (ja) |
JP (1) | JP6222002B2 (ja) |
KR (1) | KR101904682B1 (ja) |
CN (1) | CN106605285B (ja) |
DE (1) | DE112015003836B4 (ja) |
WO (1) | WO2016027563A1 (ja) |
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JP6790908B2 (ja) * | 2017-02-23 | 2020-11-25 | 株式会社デンソー | 半導体装置 |
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GB2011178B (en) * | 1977-12-15 | 1982-03-17 | Philips Electronic Associated | Fieldeffect devices |
FR2623016B1 (fr) * | 1987-11-06 | 1991-06-14 | Thomson Semiconducteurs | Dispositif de fusion d'un fusible dans un circuit integre de type cmos |
US5332947A (en) * | 1992-05-13 | 1994-07-26 | Litton Systems, Inc. | Integral polepiece RF amplification tube for millimeter wave frequencies |
JPH06139915A (ja) * | 1992-10-23 | 1994-05-20 | Rohm Co Ltd | 過電圧過電流に対する保護装置 |
JP2001015000A (ja) * | 1999-04-26 | 2001-01-19 | Sanyo Electric Co Ltd | 電子部品の製造方法及び電子部品 |
JP2002025419A (ja) * | 2000-07-12 | 2002-01-25 | Rohm Co Ltd | 過電流保護素子、これを有する半導体素子、および過電流保護素子の製造方法 |
JP3901698B2 (ja) | 2004-03-26 | 2007-04-04 | ローム株式会社 | 電流検出機能付き半導体集積回路、及びそれを用いた電源装置 |
JP2005353992A (ja) * | 2004-06-14 | 2005-12-22 | Sanyo Electric Co Ltd | 化合物半導体装置およびその製造方法 |
JP2007250347A (ja) * | 2006-03-16 | 2007-09-27 | Isahaya Electronics Corp | 半導体集積回路装置及びその製造方法 |
US8456141B2 (en) * | 2007-06-11 | 2013-06-04 | Alpha & Omega Semiconductor, Inc. | Boost converter with integrated high power discrete FET and low voltage controller |
KR100938080B1 (ko) | 2007-09-28 | 2010-01-21 | 삼성에스디아이 주식회사 | 안전 회로 및 이를 이용한 배터리 팩 |
JP2010182954A (ja) * | 2009-02-06 | 2010-08-19 | Seiko Instruments Inc | 半導体装置 |
JP2010199149A (ja) | 2009-02-23 | 2010-09-09 | Mitsubishi Electric Corp | 半導体装置 |
EP2428387A4 (en) | 2009-04-23 | 2017-03-22 | Toyota Jidosha Kabushiki Kaisha | Power supply system of electric vehicle and control method thereof |
US8169045B2 (en) * | 2009-04-28 | 2012-05-01 | Infineon Technologies Ag | System and method for constructing shielded seebeck temperature difference sensor |
US8680843B2 (en) * | 2010-06-10 | 2014-03-25 | Infineon Technologies Ag | Magnetic field current sensors |
JP5672247B2 (ja) * | 2012-01-12 | 2015-02-18 | トヨタ自動車株式会社 | ヒューズ構造 |
CN104183543B (zh) * | 2013-05-22 | 2017-02-22 | 中芯国际集成电路制造(上海)有限公司 | 电熔丝结构及其形成方法、半导体器件 |
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US10348081B2 (en) | 2019-07-09 |
JP2016046092A (ja) | 2016-04-04 |
KR20170042756A (ko) | 2017-04-19 |
CN106605285A (zh) | 2017-04-26 |
WO2016027563A1 (ja) | 2016-02-25 |
DE112015003836T5 (de) | 2017-05-18 |
KR101904682B1 (ko) | 2018-10-04 |
DE112015003836B4 (de) | 2021-08-26 |
CN106605285B (zh) | 2018-06-22 |
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