CN100543996C - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN100543996C CN100543996C CNB2006100793507A CN200610079350A CN100543996C CN 100543996 C CN100543996 C CN 100543996C CN B2006100793507 A CNB2006100793507 A CN B2006100793507A CN 200610079350 A CN200610079350 A CN 200610079350A CN 100543996 C CN100543996 C CN 100543996C
- Authority
- CN
- China
- Prior art keywords
- resistor
- semiconductor device
- metal part
- resistors
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- 229920005591 polysilicon Polymers 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 18
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D39/00—Filtering material for liquid or gaseous fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/0002—Casings; Housings; Frame constructions
- B01D46/0005—Mounting of filtering elements within casings, housings or frames
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/0027—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with additional separating or treating functions
- B01D46/0028—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with additional separating or treating functions provided with antibacterial or antifungal means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/42—Auxiliary equipment or operation thereof
- B01D46/4254—Allowing or improving visual supervision, e.g. lamps, transparent parts, windows
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005082890 | 2005-03-23 | ||
JP2005082890A JP4811988B2 (ja) | 2005-03-23 | 2005-03-23 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841745A CN1841745A (zh) | 2006-10-04 |
CN100543996C true CN100543996C (zh) | 2009-09-23 |
Family
ID=37030670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100793507A Expired - Fee Related CN100543996C (zh) | 2005-03-23 | 2006-03-23 | 半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7602044B2 (zh) |
JP (1) | JP4811988B2 (zh) |
KR (1) | KR101234454B1 (zh) |
CN (1) | CN100543996C (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5008543B2 (ja) * | 2007-12-18 | 2012-08-22 | セイコーインスツル株式会社 | 半導体装置 |
WO2010035608A1 (en) * | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2010182954A (ja) * | 2009-02-06 | 2010-08-19 | Seiko Instruments Inc | 半導体装置 |
JP2011054901A (ja) * | 2009-09-04 | 2011-03-17 | Panasonic Corp | 半導体装置及びその製造方法 |
US9202859B1 (en) * | 2014-05-27 | 2015-12-01 | Texas Instruments Incorporated | Well resistors and polysilicon resistors |
JP6586152B2 (ja) * | 2017-12-22 | 2019-10-02 | エイブリック株式会社 | 半導体装置 |
JP7361567B2 (ja) * | 2019-10-25 | 2023-10-16 | ローム株式会社 | 電子部品 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2864576B2 (ja) * | 1988-11-22 | 1999-03-03 | セイコーエプソン株式会社 | 半導体装置 |
JP3526701B2 (ja) * | 1995-08-24 | 2004-05-17 | セイコーインスツルメンツ株式会社 | 半導体装置 |
JP2003282716A (ja) * | 2002-03-25 | 2003-10-03 | Nec Microsystems Ltd | 半導体装置 |
JP4472232B2 (ja) * | 2002-06-03 | 2010-06-02 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-03-23 JP JP2005082890A patent/JP4811988B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-22 US US11/386,319 patent/US7602044B2/en not_active Expired - Fee Related
- 2006-03-23 KR KR1020060026548A patent/KR101234454B1/ko active IP Right Grant
- 2006-03-23 CN CNB2006100793507A patent/CN100543996C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006269573A (ja) | 2006-10-05 |
KR20060103186A (ko) | 2006-09-28 |
US7602044B2 (en) | 2009-10-13 |
KR101234454B1 (ko) | 2013-02-18 |
CN1841745A (zh) | 2006-10-04 |
US20060214235A1 (en) | 2006-09-28 |
JP4811988B2 (ja) | 2011-11-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160311 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090923 Termination date: 20210323 |