CN101771098B - 硅基薄膜光电转换装置、及其制造方法和制造设备 - Google Patents

硅基薄膜光电转换装置、及其制造方法和制造设备 Download PDF

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Publication number
CN101771098B
CN101771098B CN2010101095091A CN201010109509A CN101771098B CN 101771098 B CN101771098 B CN 101771098B CN 2010101095091 A CN2010101095091 A CN 2010101095091A CN 201010109509 A CN201010109509 A CN 201010109509A CN 101771098 B CN101771098 B CN 101771098B
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photoelectric conversion
semiconductor layer
type semiconductor
layer
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CN101771098A (zh
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岸本克史
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Sharp Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
CN2010101095091A 2005-10-03 2006-09-29 硅基薄膜光电转换装置、及其制造方法和制造设备 Expired - Fee Related CN101771098B (zh)

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JP2005290191 2005-10-03
JP290191/05 2005-10-03

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CN2006800369804A Expired - Fee Related CN101283455B (zh) 2005-10-03 2006-09-29 硅基薄膜光电转换装置、及其制造方法和制造设备

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US (1) US20100147379A1 (cg-RX-API-DMAC7.html)
EP (1) EP1933388A1 (cg-RX-API-DMAC7.html)
JP (2) JP5259189B2 (cg-RX-API-DMAC7.html)
KR (1) KR101057208B1 (cg-RX-API-DMAC7.html)
CN (2) CN101771098B (cg-RX-API-DMAC7.html)
TW (1) TW200721520A (cg-RX-API-DMAC7.html)
WO (1) WO2007040183A1 (cg-RX-API-DMAC7.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100216278A1 (en) * 2007-10-29 2010-08-26 Atomic Energy Council - Institute Of Nuclear Energy Research Method for making multi-cystalline film of solar cell
JP5148536B2 (ja) * 2007-12-05 2013-02-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置の運用方法及び基板処理装置
JP4531833B2 (ja) 2007-12-05 2010-08-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びクリーニング方法
CN102187471B (zh) * 2008-10-14 2013-07-31 株式会社钟化 混合硅系薄膜太阳能电池及其制造方法
JP2010129971A (ja) * 2008-12-01 2010-06-10 Sharp Corp シリコン系薄膜光電変換装置およびその製造方法
KR101531700B1 (ko) * 2008-12-01 2015-06-25 주성엔지니어링(주) 박막형 태양전지의 제조방법
DE102008063737A1 (de) * 2008-12-18 2010-06-24 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat
KR101086074B1 (ko) * 2009-02-18 2011-11-23 한국생산기술연구원 실리콘 나노 와이어 제조 방법, 실리콘 나노 와이어를 포함하는 태양전지 및 태양전지의 제조 방법
TW201041158A (en) * 2009-05-12 2010-11-16 Chin-Yao Tsai Thin film solar cell and manufacturing method thereof
KR101106480B1 (ko) * 2009-06-12 2012-01-20 한국철강 주식회사 광기전력 장치의 제조 방법
CN101894871B (zh) * 2009-11-18 2012-09-05 湖南共创光伏科技有限公司 高转化率硅晶及薄膜复合型单结pin太阳能电池及其制造方法
CN102108494B (zh) * 2009-12-23 2013-01-16 财团法人工业技术研究院 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置
JP4775869B1 (ja) * 2010-05-27 2011-09-21 シャープ株式会社 光電変換装置
WO2012043070A1 (ja) * 2010-09-27 2012-04-05 富士フイルム株式会社 光電変換素子の製造方法、固体撮像素子、撮像装置
US8513046B2 (en) * 2010-10-07 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
CN103229251B (zh) * 2010-10-29 2016-05-18 琳得科株式会社 透明导电性薄膜和电子装置以及电子装置的制备方法
US20130224937A1 (en) * 2010-11-16 2013-08-29 Sharp Kabushiki Kaisha Method for manufacturing semiconductor device
CN102479873A (zh) * 2010-11-24 2012-05-30 吉富新能源科技(上海)有限公司 高光电转换效率的压合型太阳能电池及其制造方法
CN102479863A (zh) * 2010-11-24 2012-05-30 吉富新能源科技(上海)有限公司 高光电转换效率的三层型太阳能电池
KR20120064364A (ko) * 2010-12-09 2012-06-19 삼성전자주식회사 태양 전지의 제조 방법
JP5792101B2 (ja) * 2012-03-15 2015-10-07 東京エレクトロン株式会社 積層半導体膜の成膜方法
WO2014002353A1 (ja) * 2012-06-27 2014-01-03 パナソニック株式会社 固体撮像素子及びその製造方法
US20140004648A1 (en) * 2012-06-28 2014-01-02 International Business Machines Corporation Transparent conductive electrode for three dimensional photovoltaic device
JPWO2014050304A1 (ja) * 2012-09-27 2016-08-22 パナソニックＩｐマネジメント株式会社 光電変換素子とその製造方法
EP2740817A1 (en) * 2012-12-05 2014-06-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Microcrystalline silicon thin film PECVD using hydrogen and silanes mixtures
KR102195003B1 (ko) 2014-06-18 2020-12-24 삼성전자주식회사 반도체 다이오드, 가변 저항 메모리 장치 및 가변 저항 메모리 장치의 제조 방법
US20150372160A1 (en) * 2014-06-20 2015-12-24 Nanyang Technological University P-type dopant and method for p-type doping of a semiconductor
CN109913858B (zh) * 2019-03-13 2021-03-23 Tcl华星光电技术有限公司 化学气相沉积非晶硅镀膜均匀性的改善方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200825B1 (en) * 1999-02-26 2001-03-13 Kaneka Corporation Method of manufacturing silicon based thin film photoelectric conversion device
US6239463B1 (en) * 1997-08-28 2001-05-29 Siliconix Incorporated Low resistance power MOSFET or other device containing silicon-germanium layer
US6262465B1 (en) * 1998-09-25 2001-07-17 Picometrix, Inc. Highly-doped P-type contact for high-speed, front-side illuminated photodiode
US6552371B2 (en) * 2001-02-16 2003-04-22 Teraburst Networks Inc. Telecommunications switch array with thyristor addressing
US6724018B2 (en) * 2001-09-06 2004-04-20 Sumitomo Electric Industries, Ltd. Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode
US6734462B1 (en) * 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
US6794734B2 (en) * 2002-05-03 2004-09-21 Mia-Com Heterojunction P-I-N diode and method of making the same
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US6822261B2 (en) * 1991-03-06 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6841806B1 (en) * 2003-06-24 2005-01-11 The University Of Connecticut Heterojunction thyristor-based amplifier

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3146112B2 (ja) * 1993-12-24 2001-03-12 シャープ株式会社 プラズマｃｖｄ装置
WO1999025029A1 (en) * 1997-11-10 1999-05-20 Kaneka Corporation Method of producing silicon thin-film photoelectric transducer and plasma cvd apparatus used for the method
JP3589581B2 (ja) * 1999-02-26 2004-11-17 株式会社カネカ タンデム型の薄膜光電変換装置の製造方法
JP4358343B2 (ja) * 1999-02-26 2009-11-04 株式会社カネカ シリコン系薄膜光電変換装置の製造方法
JP2001267611A (ja) * 2000-01-13 2001-09-28 Sharp Corp 薄膜太陽電池及びその製造方法
US6436488B1 (en) * 2000-06-12 2002-08-20 Agilent Technologies, Inc. Chemical vapor deposition method for amorphous silicon and resulting film
JP3576094B2 (ja) * 2000-12-07 2004-10-13 シャープ株式会社 薄膜製造方法
JP2002280584A (ja) * 2001-03-19 2002-09-27 Kanegafuchi Chem Ind Co Ltd ハイブリッド型薄膜光電変換装置とその製造方法
JP4560245B2 (ja) * 2001-06-29 2010-10-13 キヤノン株式会社 光起電力素子
JP2003068659A (ja) * 2001-08-29 2003-03-07 Sharp Corp プラズマ処理装置及びプラズマ処理方法、それらを用いて作製した薄膜、基板、半導体装置
JP3960792B2 (ja) * 2001-12-21 2007-08-15 シャープ株式会社 プラズマｃｖｄ装置、非晶質シリコン系薄膜の製造方法
JP2004006537A (ja) * 2002-05-31 2004-01-08 Ishikawajima Harima Heavy Ind Co Ltd 薄膜形成方法及び装置並びに太陽電池の製造方法並びに太陽電池
JP2004128110A (ja) * 2002-10-01 2004-04-22 Fuji Electric Holdings Co Ltd 薄膜太陽電池の製造方法
JP2004165394A (ja) * 2002-11-13 2004-06-10 Canon Inc 積層型光起電力素子
JP2004289091A (ja) * 2003-03-25 2004-10-14 Canon Inc 光起電力素子
JP4068043B2 (ja) * 2003-10-28 2008-03-26 株式会社カネカ 積層型光電変換装置
JP2005123466A (ja) * 2003-10-17 2005-05-12 Sharp Corp シリコン系薄膜光電変換装置の製造方法およびその方法により製造されたシリコン系薄膜光電変換装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822261B2 (en) * 1991-03-06 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6239463B1 (en) * 1997-08-28 2001-05-29 Siliconix Incorporated Low resistance power MOSFET or other device containing silicon-germanium layer
US6262465B1 (en) * 1998-09-25 2001-07-17 Picometrix, Inc. Highly-doped P-type contact for high-speed, front-side illuminated photodiode
US6200825B1 (en) * 1999-02-26 2001-03-13 Kaneka Corporation Method of manufacturing silicon based thin film photoelectric conversion device
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US6552371B2 (en) * 2001-02-16 2003-04-22 Teraburst Networks Inc. Telecommunications switch array with thyristor addressing
US6724018B2 (en) * 2001-09-06 2004-04-20 Sumitomo Electric Industries, Ltd. Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode
US6734462B1 (en) * 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
US6794734B2 (en) * 2002-05-03 2004-09-21 Mia-Com Heterojunction P-I-N diode and method of making the same
US6841806B1 (en) * 2003-06-24 2005-01-11 The University Of Connecticut Heterojunction thyristor-based amplifier

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TWI376814B (cg-RX-API-DMAC7.html) 2012-11-11
CN101771098A (zh) 2010-07-07
US20100147379A1 (en) 2010-06-17
JP2012151506A (ja) 2012-08-09
TW200721520A (en) 2007-06-01
KR20080065635A (ko) 2008-07-14
CN101283455A (zh) 2008-10-08
EP1933388A1 (en) 2008-06-18
KR101057208B1 (ko) 2011-08-16
JPWO2007040183A1 (ja) 2009-04-16
CN101283455B (zh) 2010-04-21
WO2007040183A1 (ja) 2007-04-12
JP5259189B2 (ja) 2013-08-07

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