CN101714577A - 横向dmos晶体管及其制造方法 - Google Patents

横向dmos晶体管及其制造方法 Download PDF

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Publication number
CN101714577A
CN101714577A CN200910178836A CN200910178836A CN101714577A CN 101714577 A CN101714577 A CN 101714577A CN 200910178836 A CN200910178836 A CN 200910178836A CN 200910178836 A CN200910178836 A CN 200910178836A CN 101714577 A CN101714577 A CN 101714577A
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CN
China
Prior art keywords
gate electrode
type
ldmos transistor
tagma
locos
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Pending
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CN200910178836A
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English (en)
Chinese (zh)
Inventor
李相容
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DB HiTek Co Ltd
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Dongbu Electronics Co Ltd
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Filing date
Publication date
Application filed by Dongbu Electronics Co Ltd filed Critical Dongbu Electronics Co Ltd
Publication of CN101714577A publication Critical patent/CN101714577A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/66704—Lateral DMOS transistors, i.e. LDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN200910178836A 2008-10-01 2009-09-28 横向dmos晶体管及其制造方法 Pending CN101714577A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080096626A KR101009399B1 (ko) 2008-10-01 2008-10-01 Ｌｄｍｏｓ 트랜지스터 및 그 제조방법
KR10-2008-0096626 2008-10-01

Publications (1)

Publication Number Publication Date
CN101714577A true CN101714577A (zh) 2010-05-26

Family

ID=42056461

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910178836A Pending CN101714577A (zh) 2008-10-01 2009-09-28 横向dmos晶体管及其制造方法

Country Status (4)

Country Link
US (1) US20100078715A1 (ko)
KR (1) KR101009399B1 (ko)
CN (1) CN101714577A (ko)
TW (1) TW201015719A (ko)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097327A (zh) * 2009-12-02 2011-06-15 万国半导体股份有限公司 双通道沟槽ldmos晶体管和bcd工艺
CN102130060A (zh) * 2010-12-24 2011-07-20 日银Imp微电子有限公司 一种用于直接驱动功率器件的高压栅驱动芯片的制备方法
CN102487082A (zh) * 2010-12-02 2012-06-06 上海华虹Nec电子有限公司 横向沟槽金属氧化物半导体器件
WO2012094780A1 (zh) * 2011-01-10 2012-07-19 电子科技大学 Soi横向mosfet器件和集成电路
CN102723304A (zh) * 2012-05-31 2012-10-10 日银Imp微电子有限公司 用于直接驱动功率器件的n阱高压栅驱动芯片的制备方法
CN102800688A (zh) * 2011-05-27 2012-11-28 旺宏电子股份有限公司 半导体结构及其操作方法
CN102862389A (zh) * 2011-07-07 2013-01-09 佳能株式会社 驱动电路、液体排放衬底和喷墨打印头
CN103632962A (zh) * 2012-08-20 2014-03-12 北大方正集团有限公司 一种dmos管的制造方法及装置
WO2021120766A1 (zh) * 2019-12-18 2021-06-24 东南大学 横向双扩散金属氧化物半导体场效应管

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174071B2 (en) * 2008-05-02 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage LDMOS transistor
KR20100064263A (ko) * 2008-12-04 2010-06-14 주식회사 동부하이텍 반도체 소자 및 이의 제조 방법
US8921933B2 (en) 2011-05-19 2014-12-30 Macronix International Co., Ltd. Semiconductor structure and method for operating the same
TWI419333B (zh) * 2011-05-19 2013-12-11 Macronix Int Co Ltd 半導體結構及其操作方法
US8962397B2 (en) * 2011-07-25 2015-02-24 Microchip Technology Incorporated Multiple well drain engineering for HV MOS devices
JP2013069861A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 半導体装置
JP6198292B2 (ja) * 2012-08-17 2017-09-20 ローム株式会社 半導体装置および半導体装置の製造方法
US10038061B2 (en) 2016-07-08 2018-07-31 International Business Machines Corporation High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
US10367086B2 (en) * 2017-06-14 2019-07-30 Hrl Laboratories, Llc Lateral fin static induction transistor
CN110491941B (zh) * 2018-05-15 2023-03-24 立锜科技股份有限公司 高压元件及其制造方法
EP4136679A4 (en) 2020-04-17 2024-01-17 HRL Laboratories LLC VERTICAL DIAMOND MOSFET AND METHOD FOR PRODUCING SAME
CN111477681A (zh) * 2020-04-23 2020-07-31 西安电子科技大学 双通道均匀电场调制横向双扩散金属氧化物元素半导体场效应管及制作方法
CN111477680A (zh) * 2020-04-23 2020-07-31 西安电子科技大学 双通道均匀电场调制横向双扩散金属氧化物宽带隙半导体场效应管及制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050001265A1 (en) * 2003-06-13 2005-01-06 Satoshi Shiraki Semiconductor device and method for manufacturing the same
CN101095218A (zh) * 2004-08-03 2007-12-26 飞兆半导体公司 使用沉陷沟槽具有顶部漏极的半导体功率器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064088A (en) 1998-06-15 2000-05-16 Xemod, Inc. RF power MOSFET device with extended linear region of transconductance characteristic at low drain current
JP2002094063A (ja) * 2000-09-11 2002-03-29 Toshiba Corp 半導体装置
US6900101B2 (en) * 2003-06-13 2005-05-31 Texas Instruments Incorporated LDMOS transistors and methods for making the same
KR100641555B1 (ko) * 2004-12-30 2006-10-31 동부일렉트로닉스 주식회사 트랜치 소스 구조를 갖는 수평형 디모스 트랜지스터
US7473976B2 (en) * 2006-02-16 2009-01-06 Fairchild Semiconductor Corporation Lateral power transistor with self-biasing electrodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050001265A1 (en) * 2003-06-13 2005-01-06 Satoshi Shiraki Semiconductor device and method for manufacturing the same
CN101095218A (zh) * 2004-08-03 2007-12-26 飞兆半导体公司 使用沉陷沟槽具有顶部漏极的半导体功率器件

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097327B (zh) * 2009-12-02 2013-10-23 万国半导体股份有限公司 双通道沟槽ldmos晶体管和bcd工艺
CN102097327A (zh) * 2009-12-02 2011-06-15 万国半导体股份有限公司 双通道沟槽ldmos晶体管和bcd工艺
CN102487082A (zh) * 2010-12-02 2012-06-06 上海华虹Nec电子有限公司 横向沟槽金属氧化物半导体器件
CN102130060A (zh) * 2010-12-24 2011-07-20 日银Imp微电子有限公司 一种用于直接驱动功率器件的高压栅驱动芯片的制备方法
CN102130060B (zh) * 2010-12-24 2013-02-20 日银Imp微电子有限公司 一种用于直接驱动功率器件的高压栅驱动芯片的制备方法
WO2012094780A1 (zh) * 2011-01-10 2012-07-19 电子科技大学 Soi横向mosfet器件和集成电路
CN102800688B (zh) * 2011-05-27 2015-03-04 旺宏电子股份有限公司 半导体结构及其操作方法
CN102800688A (zh) * 2011-05-27 2012-11-28 旺宏电子股份有限公司 半导体结构及其操作方法
CN102862389A (zh) * 2011-07-07 2013-01-09 佳能株式会社 驱动电路、液体排放衬底和喷墨打印头
CN102723304B (zh) * 2012-05-31 2014-07-16 日银Imp微电子有限公司 用于直接驱动功率器件的n阱高压栅驱动芯片的制备方法
CN102723304A (zh) * 2012-05-31 2012-10-10 日银Imp微电子有限公司 用于直接驱动功率器件的n阱高压栅驱动芯片的制备方法
CN103632962A (zh) * 2012-08-20 2014-03-12 北大方正集团有限公司 一种dmos管的制造方法及装置
WO2021120766A1 (zh) * 2019-12-18 2021-06-24 东南大学 横向双扩散金属氧化物半导体场效应管
US11894458B2 (en) 2019-12-18 2024-02-06 Southeast University Lateral double-diffused metal oxide semiconductor field effect transistor

Also Published As

Publication number Publication date
US20100078715A1 (en) 2010-04-01
KR20100037341A (ko) 2010-04-09
TW201015719A (en) 2010-04-16
KR101009399B1 (ko) 2011-01-19

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Application publication date: 20100526