CN101714568B - 制造光电转换器件的方法 - Google Patents

制造光电转换器件的方法 Download PDF

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Publication number
CN101714568B
CN101714568B CN2009102526453A CN200910252645A CN101714568B CN 101714568 B CN101714568 B CN 101714568B CN 2009102526453 A CN2009102526453 A CN 2009102526453A CN 200910252645 A CN200910252645 A CN 200910252645A CN 101714568 B CN101714568 B CN 101714568B
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China
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semiconductor region
region
gate electrode
photoelectric conversion
type semiconductor
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Expired - Fee Related
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CN2009102526453A
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English (en)
Chinese (zh)
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CN101714568A (zh
Inventor
浦贤一郎
福元嘉彦
片冈有三
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
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CN2009102526453A 2006-07-10 2007-07-10 制造光电转换器件的方法 Expired - Fee Related CN101714568B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006189244A JP5116264B2 (ja) 2006-07-10 2006-07-10 光電変換装置、光電変換装置の製造方法および光電変換装置を用いた撮像システム
JP2006-189244 2006-07-10

Related Parent Applications (1)

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CN200710128400A Division CN100580942C (zh) 2006-07-10 2007-07-10 光电转换器件和具有光电转换器件的摄像系统

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CN101714568A CN101714568A (zh) 2010-05-26
CN101714568B true CN101714568B (zh) 2012-01-04

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CN2009102526453A Expired - Fee Related CN101714568B (zh) 2006-07-10 2007-07-10 制造光电转换器件的方法
CN200710128400A Expired - Fee Related CN100580942C (zh) 2006-07-10 2007-07-10 光电转换器件和具有光电转换器件的摄像系统

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US (2) US7459760B2 (enExample)
EP (2) EP1879231A3 (enExample)
JP (1) JP5116264B2 (enExample)
CN (2) CN101714568B (enExample)

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JP5180537B2 (ja) * 2007-08-24 2013-04-10 キヤノン株式会社 光電変換装置及びマルチチップイメージセンサ
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP2010206173A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2010206172A (ja) 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP2010212319A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、電子機器および固体撮像装置の製造方法
JP5513055B2 (ja) * 2009-10-01 2014-06-04 キヤノン株式会社 固体撮像素子の製造方法
WO2011055625A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
JP5564909B2 (ja) * 2009-11-30 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011114302A (ja) * 2009-11-30 2011-06-09 Sony Corp 半導体素子の製造方法及び半導体素子、並びに固体撮像素子及び固体撮像装置
JP5568969B2 (ja) * 2009-11-30 2014-08-13 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US9040341B2 (en) * 2012-06-04 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Image device and methods of forming the same
JP6119432B2 (ja) * 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
CN110556390B (zh) * 2018-05-31 2024-09-27 松下知识产权经营株式会社 摄像装置

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CN1731584A (zh) * 2004-08-04 2006-02-08 原相科技股份有限公司 光感测区及外围电路区相互隔离的主动取像元件
CN1735969A (zh) * 2002-11-12 2006-02-15 微米技术有限公司 用于减少cmos图像传感器中的暗电流的接地栅极和隔离技术

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JP2002190586A (ja) * 2000-12-22 2002-07-05 Mitsubishi Electric Corp 固体撮像装置およびその製造方法
JP4282049B2 (ja) 2002-02-28 2009-06-17 キヤノン株式会社 半導体装置、光電変換装置及びカメラ
JP4117540B2 (ja) * 2002-10-17 2008-07-16 ソニー株式会社 固体撮像素子の制御方法
JP3794637B2 (ja) * 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
JP4297416B2 (ja) * 2003-06-10 2009-07-15 シャープ株式会社 固体撮像素子、その駆動方法およびカメラ
JP4514188B2 (ja) 2003-11-10 2010-07-28 キヤノン株式会社 光電変換装置及び撮像装置
US7214575B2 (en) * 2004-01-06 2007-05-08 Micron Technology, Inc. Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
JP3729826B2 (ja) * 2004-01-09 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
JP4230406B2 (ja) * 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
JP2006032681A (ja) * 2004-07-16 2006-02-02 Sony Corp 半導体装置および物理情報取得装置並びに半導体装置の駆動方法
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CN1735969A (zh) * 2002-11-12 2006-02-15 微米技术有限公司 用于减少cmos图像传感器中的暗电流的接地栅极和隔离技术
CN1731584A (zh) * 2004-08-04 2006-02-08 原相科技股份有限公司 光感测区及外围电路区相互隔离的主动取像元件

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Title
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JP特开2005-123395A 2005.05.12

Also Published As

Publication number Publication date
CN101714568A (zh) 2010-05-26
JP5116264B2 (ja) 2013-01-09
US20090053849A1 (en) 2009-02-26
EP1879231A2 (en) 2008-01-16
CN100580942C (zh) 2010-01-13
US7459760B2 (en) 2008-12-02
CN101106149A (zh) 2008-01-16
JP2008016771A (ja) 2008-01-24
US20080006892A1 (en) 2008-01-10
EP2445009A3 (en) 2013-11-13
US7749790B2 (en) 2010-07-06
EP2445009A2 (en) 2012-04-25
EP1879231A3 (en) 2011-03-16

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