CN101713071A - 制备整体金属结构的方法以及由该方法制备的结构 - Google Patents

制备整体金属结构的方法以及由该方法制备的结构 Download PDF

Info

Publication number
CN101713071A
CN101713071A CN200910204996A CN200910204996A CN101713071A CN 101713071 A CN101713071 A CN 101713071A CN 200910204996 A CN200910204996 A CN 200910204996A CN 200910204996 A CN200910204996 A CN 200910204996A CN 101713071 A CN101713071 A CN 101713071A
Authority
CN
China
Prior art keywords
powder
base material
settling
producing
refractory metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200910204996A
Other languages
English (en)
Other versions
CN101713071B (zh
Inventor
S·A·米勒
P·库玛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Starck GmbH
Original Assignee
HC Starck GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=41416078&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN101713071(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by HC Starck GmbH filed Critical HC Starck GmbH
Publication of CN101713071A publication Critical patent/CN101713071A/zh
Application granted granted Critical
Publication of CN101713071B publication Critical patent/CN101713071B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/14—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas designed for spraying particulate materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/20—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by extruding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C2200/00—Crystalline structure
    • C22C2200/04—Nanocrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

制备整体金属结构的方法以及由该方法制备的结构。通过一种方法生产由亚微米级晶粒尺寸构成的三维大金属结构，该方法包括将超声粉末喷射流导向基材，使得粉末粘附在基材和其自身上，形成致密的粘着沉积物。粉末喷射流可由难熔金属粉末组成。可通过超声喷射流沉积粉末，并通过等径角挤压法挤压。

Description

制备整体金属结构的方法以及由该方法制备的结构
待解决的问题
具有亚微米或纳米晶体结构的金属和金属合金在商业和军事领域都有重要意义。它们具有新颖的性质，能够开发完全新的产品。但是至今为止，制备感兴趣的金属的整体纳米晶体材料仍然有困难。大部分成功的例子是薄膜和喷射涂层。使用高能研磨、高形变速率加工碎片、等角挤压和简便的玻璃形成剂已经取得了一些成功。但是这些成功的例子都具有严重的缺陷。仍然需要简单且节省成本的方法来制备三维的具有亚微米级晶粒尺寸的大晶体结构。
发明背景
具有亚微米或纳米晶粒结构的金属材料由于其独特的性质而备受关注，这些性质包括扩大的延展性和极高的屈服强度。对于制备纳米晶体结构的薄膜、涂层和粉末已经进行了许多工作，但是制备三维大结构的方法仍然是难以捉摸的。
高能研磨可能是最常用的制备具有亚微米级晶粒结构的金属粉末的方法之一。该方法的一个问题是粉末常常被工艺中使用的研磨机、磨碎机或研磨介质磨损产生的微观颗粒重度污染。
珀德尤大学(Purdue University)倡导另一种技术，该技术目前已被纳米动态学公司(Nanodynamics Inc.)商业化，其中涉及压实在高形变速率下产生的加工碎片。加工过程中引入的冷作导致碎片中产生纳米晶粒尺寸。如同高能研磨工艺，该技术也遇到被加工过程污染的问题，同样需要采用昂贵的二次操作(热等静压压制、挤压、爆破压实等)来将疏松的粉末或碎片整实为大块固体。如果不小心控制，该二次操作常常会在整实的过程中破坏初始的微观结构。
等径角挤压(ECAE)是高剪切工艺，其中金属或合金被强制通过改变流
等径角挤压(ECAE)是高剪切工艺，其中金属或合金被强制通过改变流动方向的模具。由此产生极高的应变，造成晶粒尺寸精细化。但是，为了产生亚微米级晶粒尺寸，金属可能必须多次(3-4)通过模具，结果造成工艺复杂、成本提高。
其它方法如A.C.Hall，L.N.Brewer和T.J.Roemer，“使用冷喷涂方法制备含均一的纳米晶体微观结构的铝涂层(Preparation of Aluminum coatingsContaining Homogeneous Nanocrystalline Microstructures Using the coldSpray Process)”，JTTEES 17：352-359已经表明由亚微米级晶粒尺寸的粉末制备的薄涂层在通过冷喷涂制备涂层时仍然保持其亚微米级晶粒尺寸。在某些含铝的情况中，它们甚至具有减小的亚微米级晶粒尺寸。
发明内容
我们已经发现，某些常规晶粒尺寸(主要为5-10微米，甚至更大)的金属粉末在较低温度下以超音速喷射并沉积在基材上时，形成具有亚微米级晶粒结构的致密固体。所制备的沉积物在所有三个维度上的尺寸都可以很大，基材很容易取出，只留下该纳米晶体沉积物。该沉积物与涂层的区别在于：难熔金属涂层的厚度通常小于0.5毫米，甚至常常小于0.1毫米，并且依赖附着在基材上的残余物来保持其物理完整性。在此情况中，厚度尺寸可以非常大，最高达1-2厘米，甚至超出该范围。厚度较大使得沉积物可以从基材上取下，用于直立式用品中。
我们已经论证了Ta、Nb和Mo金属的该项行为(所有都是BCC结构，并具有高熔点温度)，相信这是一种对速率敏感的普遍现象。
附图说明
图1显示了通过冷喷涂制备的管状钽预制件；
图2是从通过冷喷涂制备的溅射靶获取的TaNb复合物的SEM显微照片；
图3是MoTi溅射靶的宏观照片；和
图4是冷喷涂的MoTi样本的SEM放大显微照片。
具体实施方式
我们已经发现的是一种制备具有亚微米晶粒结构的三维大结构的方法。该亚微米晶粒结构还具有在升高温度下加工时的耐生长性，该高温加工可用于提高颗粒间粘结强度，消除加工硬化，提高延展性。另外，这些沉积物可用作ECAE加工的原料，将形成完全致密化的精细的均匀结构所需的通过次数减少到1次。
通常，生产由亚微米范围粒度构成的三维大金属结构的方法包括将超声粉末喷射流导向基材，使得粉末粘附在基材和其自身上，形成致密的粘着沉积物。因此，可由这种沉积物制备的产品包括但不限于爆破成型弹丸(explosively formed projectiles)、动能穿孔器(kinetic energy penetrators)和氢气膜(hydrogen membranes)。在该过程中，粉末化的喷射流可由难熔金属粉末组成。因此，由具有亚微米微观结构的金属粉末制备的致密的金属结构可用作难熔金属结构。本发明可以通过以下方式实施：通过超声喷射流沉积粉末，并通过等径角挤压法(Equi channel angular extrusion)进行挤压。沉积物可以保持粘附在基材上，或者可以将沉积物从基材上取下。
可使用已知的冷喷涂体系实施本发明，其中使用例如受热的气体(例如氮气)来加快粉末的速度，制得随后将导向基材的超声粉末喷射流。当将超声粉末喷射流导向基材并使得粉末粘附在基材和其自身上时，所得致密的粘着沉积物产生由亚微米级晶粒尺寸构成的三维大金属结构。
实施例
以下所示的结果都是使用Kinetics 4000冷喷涂体系得到的。该体系是一种可商购的标准体系。通常，冷喷涂工艺包括将气流导向靶，其中气流与粉末形成气流-粉末混合物。使气流具有超音速。将超音速喷射流导向基材表面，从而冷喷涂基材。PCT申请U.S.2008/062434揭示了冷喷涂技术。该申请的所有具体内容都通过参考结合于此。在本发明的实施中，使用在500-800℃和约30巴的受热氮气来加快粉末的速度，从而制得超声粉末喷射流。该喷射流通常对着铜或钢基材喷去。基材通常是圆柱形的，类似圆柱形的，或者平面形的。可以制成管状、碗状、平盘状和矩形的。从成形体上切下金相学样品，进行机械抛光。使用FIB SEM以二次散射模式和反散射模式检测微观结构。H.C.施塔克公司(HC Starck)制备的用于冷喷涂应用的特定高纯度钽、铌和钼粉末用于这些实验中。
图1显示了通过冷喷涂制备的管状钽预制件。该预制件的长度约为150毫米，外径为85毫米，壁厚为14毫米，重量为8.8千克。该预制件是三维大结构的一个例子。
图2是从通过冷喷涂制备的溅射靶获取的TaNb复合物(50/50w/o)的SEM显微照片。Ta看上去作为亮相，而Nb作为暗相。左边的一幅图的亮度和对比度经过调节显示出Ta微观结构的具体情况，而右边的一幅图经过调节显示出Nb的微观结构。在接近Ta粉末颗粒的表面处，显然微观结构是高度精细化的，包含的晶粒通常小于400-500纳米。向内部移动，结构变得更分散。我们相信这是因为从颗粒外部到颗粒内部产生的应变梯度造成的，因为内部所承受的变形更小。可以简单地通过使用更细小的粉末和可能甚至更高的颗粒速率来消除这种梯度。右边的一幅显微照片显示围绕Nb的微观结构。虽然许多晶粒仍然是亚微米尺寸的，但是显然精细化的程度明显小于Ta。图2在左侧和右侧的图底部都包括一根横线，用来作为1微米的标度尺。
图3是直径125毫米的MoTi(67/33w/o)溅射靶的宏观照片。如同图1，该图仅仅论证了冷喷涂法制备自立式大物体的可能性。
图4是冷喷涂的MoTi样本的高倍放大显微照片。该样本已经在700C的真空中退火1.5小时。亮相是Mo，暗相是Ti。在Mo中，晶粒尺寸约为500纳米，而在Ti中，晶粒生长到约微米级的尺寸。图4在图底部中央位置有一横线，作为1微米的标度尺。

Claims (15)

1.一种生产由亚微米级晶粒尺寸构成的三维大金属结构的方法，该方法包括将超声金属粉末喷射流导向基材，使得粉末粘附在基材和其自身上，形成致密的粘着沉积物，该沉积物具有亚微米晶粒结构，并且在所有三个维度上都具有大尺寸。
2.如权利要求1所述的方法，其特征在于，所述粉末喷射流包含难熔金属粉末。
3.如权利要求2所述的方法，其特征在于，所生产的三维大金属结构是难熔金属结构。
4.如权利要求1所述的方法，其特征在于，所述粉末通过超声喷射流沉积，并通过等径角挤压法挤压。
5.如权利要求1所述的方法，其特征在于，在生产三维大金属结构时，沉积物保持粘附在基材上。
6.如权利要求1所述的方法，其特征在于，包括将基材与沉积物相互分离。
7.如权利要求1所述的方法，其特征在于，所生产的三维大金属结构是选自下组的产品：爆破成型弹丸、动能穿孔器和氢气膜。
8.如权利要求1所述的方法，其特征在于，所述方法使用冷喷涂体系，其中使用受热气体加快粉末的速度，形成超声粉末喷射流。
9.如权利要求1所述的方法，其特征在于，包括退火步骤，以增加颗粒间粘结和/或延展性，或降低加工硬化。
10.如权利要求1所述的方法，其特征在于，包括热处理步骤，以增加颗粒间粘结和/或延展性，或降低加工硬化。
11.如权利要求1所述的方法，其特征在于，所述粉末选自下组：钽、铌和钼。
12.一种通过如权利要求1所述的方法生产的由亚微米级晶粒尺寸构成的三维大金属结构。
13.一种通过如权利要求1所述的方法生产的难熔金属结构。
14.一种通过如权利要求1所述的方法生产的难熔金属结构，其在喷涂后进行了退火或热处理步骤。
15.一种选自下组的产品：通过如权利要求1所述的方法生产的爆破成型弹丸、动能穿孔器和氢气膜。
CN200910204996.7A 2008-10-06 2009-09-29 制备整体金属结构的方法以及由该方法制备的结构 Expired - Fee Related CN101713071B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/245,840 US8043655B2 (en) 2008-10-06 2008-10-06 Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
US12/245,840 2008-10-06

Publications (2)

Publication Number Publication Date
CN101713071A true CN101713071A (zh) 2010-05-26
CN101713071B CN101713071B (zh) 2014-05-07

Family

ID=41416078

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910204996.7A Expired - Fee Related CN101713071B (zh) 2008-10-06 2009-09-29 制备整体金属结构的方法以及由该方法制备的结构

Country Status (10)

Country Link
US (1) US8043655B2 (zh)
EP (1) EP2172292B1 (zh)
JP (1) JP5725700B2 (zh)
KR (1) KR101456725B1 (zh)
CN (1) CN101713071B (zh)
BR (1) BRPI0904976A2 (zh)
CA (1) CA2681424A1 (zh)
MX (1) MX2009010724A (zh)
RU (1) RU2009136708A (zh)
ZA (1) ZA200906940B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106413913A (zh) * 2014-04-15 2017-02-15 联邦科学与工业研究组织 使用冷喷涂生产预制件的方法
WO2018091000A1 (zh) * 2016-11-18 2018-05-24 华中科技大学 一种适用于零件与模具的复合增材制造方法
CN110508809A (zh) * 2019-08-29 2019-11-29 华中科技大学 一种增材制造与表面涂覆复合成形系统及方法
CN115338422A (zh) * 2022-06-29 2022-11-15 西北工业大学 一种提高毁伤后效压力的多层药型罩涂层的增材制造方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1880036A2 (en) * 2005-05-05 2008-01-23 H.C. Starck GmbH Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
MX2007013600A (es) * 2005-05-05 2008-01-24 Starck H C Gmbh Metodo para revestir una superficie de bustrato y producto revestido.
US7837929B2 (en) * 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
BRPI0718237A2 (pt) * 2006-11-07 2013-11-12 Starck H C Gmbh Método para revestir uma superfície de substrato e produto revestido
US20080145688A1 (en) * 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8709335B1 (en) * 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by cold spraying
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
US8449818B2 (en) 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
JP5808066B2 (ja) 2011-05-10 2015-11-10 エイチ．シー．スターク インク． 複合ターゲット
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
WO2014073633A1 (ja) * 2012-11-12 2014-05-15 日立金属株式会社 コールドスプレー用粉末およびこれを用いたスパッタリングターゲットの製造方法
KR101971252B1 (ko) 2018-07-20 2019-04-22 장준하 파력 실험을 위한 수조 타입 물결파 발생장치
JP2024522246A (ja) * 2021-05-31 2024-06-11 コンポジット テクノロジー アールアンドディー ピーティーワイ リミテッド 付加製造金属ケーシング

Family Cites Families (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990784A (en) * 1974-06-05 1976-11-09 Optical Coating Laboratory, Inc. Coated architectural glass system and method
US4011981A (en) * 1975-03-27 1977-03-15 Olin Corporation Process for bonding titanium, tantalum, and alloys thereof
US4073427A (en) * 1976-10-07 1978-02-14 Fansteel Inc. Lined equipment with triclad wall construction
US4140172A (en) * 1976-12-23 1979-02-20 Fansteel Inc. Liners and tube supports for industrial and chemical process equipment
US4291104A (en) * 1978-04-17 1981-09-22 Fansteel Inc. Brazed corrosion resistant lined equipment
US4202932A (en) * 1978-07-21 1980-05-13 Xerox Corporation Magnetic recording medium
DE3130392C2 (de) * 1981-07-31 1985-10-17 Hermann C. Starck Berlin, 1000 Berlin Verfahren zur Herstellung reiner agglomerierter Ventilmetallpulver für Elektrolytkondensatoren, deren Verwendung und Verfahren zur Herstellung von Sinteranoden
US4459062A (en) * 1981-09-11 1984-07-10 Monsanto Company Clad metal joint closure
CA1202599A (en) 1982-06-10 1986-04-01 Michael G. Down Upgrading titanium, zirconium and hafnium powders by plasma processing
DE3309891A1 (de) * 1983-03-18 1984-10-31 Hermann C. Starck Berlin, 1000 Berlin Verfahren zur herstellung von ventilmetallanoden fuer elektrolytkondensatoren
US4508563A (en) * 1984-03-19 1985-04-02 Sprague Electric Company Reducing the oxygen content of tantalum
US4818629A (en) * 1985-08-26 1989-04-04 Fansteel Inc. Joint construction for lined equipment
US4722756A (en) * 1987-02-27 1988-02-02 Cabot Corp Method for deoxidizing tantalum material
US4731111A (en) * 1987-03-16 1988-03-15 Gte Products Corporation Hydrometallurical process for producing finely divided spherical refractory metal based powders
JPS6415353A (en) * 1987-07-08 1989-01-19 Toshiba Corp Alloy for thermal spraying
US4915745A (en) * 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
US5242481A (en) 1989-06-26 1993-09-07 Cabot Corporation Method of making powders and products of tantalum and niobium
US4964906A (en) * 1989-09-26 1990-10-23 Fife James A Method for controlling the oxygen content of tantalum material
EP0484533B1 (en) 1990-05-19 1995-01-25 Anatoly Nikiforovich Papyrin Method and device for coating
US5091244A (en) * 1990-08-10 1992-02-25 Viratec Thin Films, Inc. Electrically-conductive, light-attenuating antireflection coating
US5270858A (en) 1990-10-11 1993-12-14 Viratec Thin Films Inc D.C. reactively sputtered antireflection coatings
US5612254A (en) * 1992-06-29 1997-03-18 Intel Corporation Methods of forming an interconnect on a semiconductor substrate
US5693203A (en) 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
US5305946A (en) * 1992-11-05 1994-04-26 Nooter Corporation Welding process for clad metals
US5679473A (en) * 1993-04-01 1997-10-21 Asahi Komag Co., Ltd. Magnetic recording medium and method for its production
US6103392A (en) 1994-12-22 2000-08-15 Osram Sylvania Inc. Tungsten-copper composite powder
US5795626A (en) * 1995-04-28 1998-08-18 Innovative Technology Inc. Coating or ablation applicator with a debris recovery attachment
US5993513A (en) * 1996-04-05 1999-11-30 Cabot Corporation Method for controlling the oxygen content in valve metal materials
US5954856A (en) * 1996-04-25 1999-09-21 Cabot Corporation Method of making tantalum metal powder with controlled size distribution and products made therefrom
US5859654A (en) * 1996-10-31 1999-01-12 Hewlett-Packard Company Print head for ink-jet printing a method for making print heads
CN1088761C (zh) * 1997-02-19 2002-08-07 H.C.施塔克公司 钽粉及其制造方法和由其制成的烧结阳极
US5972065A (en) * 1997-07-10 1999-10-26 The Regents Of The University Of California Purification of tantalum by plasma arc melting
KR20010032498A (ko) * 1997-11-26 2001-04-25 조셉 제이. 스위니 손상없는 스컵쳐 코팅 증착
US6911124B2 (en) * 1998-09-24 2005-06-28 Applied Materials, Inc. Method of depositing a TaN seed layer
US6171363B1 (en) * 1998-05-06 2001-01-09 H. C. Starck, Inc. Method for producing tantallum/niobium metal powders by the reduction of their oxides with gaseous magnesium
US6189663B1 (en) * 1998-06-08 2001-02-20 General Motors Corporation Spray coatings for suspension damper rods
DE19847012A1 (de) * 1998-10-13 2000-04-20 Starck H C Gmbh Co Kg Niobpulver und Verfahren zu dessen Herstellung
FR2785897B1 (fr) * 1998-11-16 2000-12-08 Commissariat Energie Atomique Couche mince d'oxyde d'hafnium et procede de depot
US6328927B1 (en) 1998-12-24 2001-12-11 Praxair Technology, Inc. Method of making high-density, high-purity tungsten sputter targets
US6197082B1 (en) * 1999-02-17 2001-03-06 H.C. Starck, Inc. Refining of tantalum and tantalum scrap with carbon
US6558447B1 (en) * 1999-05-05 2003-05-06 H.C. Starck, Inc. Metal powders produced by the reduction of the oxides with gaseous magnesium
US6139913A (en) * 1999-06-29 2000-10-31 National Center For Manufacturing Sciences Kinetic spray coating method and apparatus
JP2001020065A (ja) 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6521173B2 (en) * 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
US6261337B1 (en) * 1999-08-19 2001-07-17 Prabhat Kumar Low oxygen refractory metal powder for powder metallurgy
DE19942916A1 (de) * 1999-09-08 2001-03-15 Linde Gas Ag Herstellen von aufschäumbaren Metallkörpern und Metallschäumen
JP2001085378A (ja) * 1999-09-13 2001-03-30 Sony Corp 半導体装置およびその製造方法
US6258402B1 (en) * 1999-10-12 2001-07-10 Nakhleh Hussary Method for repairing spray-formed steel tooling
CN1214129C (zh) * 1999-12-28 2005-08-10 东芝株式会社 真空成膜装置用部件及使用该部件的真空成膜装置及其觇板装置
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US7122069B2 (en) 2000-03-29 2006-10-17 Osram Sylvania Inc. Mo-Cu composite powder
US6502767B2 (en) * 2000-05-03 2003-01-07 Asb Industries Advanced cold spray system
US20030023132A1 (en) * 2000-05-31 2003-01-30 Melvin David B. Cyclic device for restructuring heart chamber geometry
JP2001347672A (ja) * 2000-06-07 2001-12-18 Fuji Photo Film Co Ltd インクジェット記録ヘッドおよびインクジェット記録ヘッドの製造方法ならびにインクジェットプリンタ
US6586327B2 (en) * 2000-09-27 2003-07-01 Nup2 Incorporated Fabrication of semiconductor devices
US6498091B1 (en) * 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US6669782B1 (en) 2000-11-15 2003-12-30 Randhir P. S. Thakur Method and apparatus to control the formation of layers useful in integrated circuits
US6491208B2 (en) 2000-12-05 2002-12-10 Siemens Westinghouse Power Corporation Cold spray repair process
US6444259B1 (en) * 2001-01-30 2002-09-03 Siemens Westinghouse Power Corporation Thermal barrier coating applied with cold spray technique
ATE325906T1 (de) * 2001-02-14 2006-06-15 Starck H C Inc Reparatur von tantalsputtertargets.
US7794554B2 (en) 2001-02-14 2010-09-14 H.C. Starck Inc. Rejuvenation of refractory metal products
ES2272707T3 (es) * 2001-02-20 2007-05-01 H. C. Starck, Inc. Placas de metal refractario de textura uniforme y metodos para fabricar las mismas.
US6915964B2 (en) * 2001-04-24 2005-07-12 Innovative Technology, Inc. System and process for solid-state deposition and consolidation of high velocity powder particles using thermal plastic deformation
US6722584B2 (en) * 2001-05-02 2004-04-20 Asb Industries, Inc. Cold spray system nozzle
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
CN1608141A (zh) * 2001-09-17 2005-04-20 黑罗伊斯有限公司 废弃溅射靶的修复
US6770154B2 (en) * 2001-09-18 2004-08-03 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
US7081148B2 (en) * 2001-09-18 2006-07-25 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
US6986471B1 (en) * 2002-01-08 2006-01-17 Flame Spray Industries, Inc. Rotary plasma spray method and apparatus for applying a coating utilizing particle kinetics
US6861101B1 (en) * 2002-01-08 2005-03-01 Flame Spray Industries, Inc. Plasma spray method for applying a coating utilizing particle kinetics
EP2278045A1 (en) * 2002-01-24 2011-01-26 H.C. Starck Inc. methods for rejuvenating tantalum sputtering targets and rejuvenated tantalum sputtering targets
US6627814B1 (en) * 2002-03-22 2003-09-30 David H. Stark Hermetically sealed micro-device package with window
BE1014736A5 (fr) 2002-03-29 2004-03-02 Alloys For Technical Applic S Procede de fabrication et de recharge de cibles pour pulverisation cathodique.
US6896933B2 (en) * 2002-04-05 2005-05-24 Delphi Technologies, Inc. Method of maintaining a non-obstructed interior opening in kinetic spray nozzles
US20030219542A1 (en) * 2002-05-25 2003-11-27 Ewasyshyn Frank J. Method of forming dense coatings by powder spraying
DE10224777A1 (de) * 2002-06-04 2003-12-18 Linde Ag Verfahren und Vorrichtung zum Kaltgasspritzen
DE10224780A1 (de) * 2002-06-04 2003-12-18 Linde Ag Verfahren und Vorrichtung zum Kaltgasspritzen
US6759085B2 (en) * 2002-06-17 2004-07-06 Sulzer Metco (Us) Inc. Method and apparatus for low pressure cold spraying
US7128988B2 (en) * 2002-08-29 2006-10-31 Lambeth Systems Magnetic material structures, devices and methods
JP4883546B2 (ja) * 2002-09-20 2012-02-22 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲットの製造方法
US7108893B2 (en) * 2002-09-23 2006-09-19 Delphi Technologies, Inc. Spray system with combined kinetic spray and thermal spray ability
US20040065546A1 (en) * 2002-10-04 2004-04-08 Michaluk Christopher A. Method to recover spent components of a sputter target
CA2444917A1 (en) 2002-10-18 2004-04-18 United Technologies Corporation Cold sprayed copper for rocket engine applications
US6749002B2 (en) * 2002-10-21 2004-06-15 Ford Motor Company Method of spray joining articles
DE10253794B4 (de) 2002-11-19 2005-03-17 Hühne, Erwin Dieter Niedertemperatur Hochgeschwindigkeits-Flammspritzsystem
TW571342B (en) * 2002-12-18 2004-01-11 Au Optronics Corp Method of forming a thin film transistor
TWI341337B (en) * 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
JP4637819B2 (ja) 2003-02-24 2011-02-23 テクナ・プラズマ・システムズ・インコーポレーテッド スパッタリングターゲットを製造するための方法および装置
JP4008388B2 (ja) * 2003-06-30 2007-11-14 シャープ株式会社 半導体キャリア用フィルムおよびそれを用いた半導体装置、液晶モジュール
US7170915B2 (en) * 2003-07-23 2007-01-30 Intel Corporation Anti-reflective (AR) coating for high index gain media
US7208230B2 (en) * 2003-08-29 2007-04-24 General Electric Company Optical reflector for reducing radiation heat transfer to hot engine parts
US7128948B2 (en) * 2003-10-20 2006-10-31 The Boeing Company Sprayed preforms for forming structural members
WO2005073418A1 (ja) 2004-01-30 2005-08-11 Nippon Tungsten Co., Ltd. タングステン系焼結体およびその製造方法
US6905728B1 (en) * 2004-03-22 2005-06-14 Honeywell International, Inc. Cold gas-dynamic spray repair on gas turbine engine components
US20050220995A1 (en) * 2004-04-06 2005-10-06 Yiping Hu Cold gas-dynamic spraying of wear resistant alloys on turbine blades
US20060021870A1 (en) * 2004-07-27 2006-02-02 Applied Materials, Inc. Profile detection and refurbishment of deposition targets
US20060045785A1 (en) * 2004-08-30 2006-03-02 Yiping Hu Method for repairing titanium alloy components
US20060042728A1 (en) * 2004-08-31 2006-03-02 Brad Lemon Molybdenum sputtering targets
CN101052746B (zh) * 2004-09-25 2010-04-14 Abb技术股份公司 用于制造耐烧蚀的涂层以及用于真空开关箱的相应屏蔽件
US20060090593A1 (en) * 2004-11-03 2006-05-04 Junhai Liu Cold spray formation of thin metal coatings
US20060121187A1 (en) * 2004-12-03 2006-06-08 Haynes Jeffrey D Vacuum cold spray process
US7479299B2 (en) * 2005-01-26 2009-01-20 Honeywell International Inc. Methods of forming high strength coatings
US7399335B2 (en) * 2005-03-22 2008-07-15 H.C. Starck Inc. Method of preparing primary refractory metal
US20060251872A1 (en) * 2005-05-05 2006-11-09 Wang Jenn Y Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof
EP1880036A2 (en) * 2005-05-05 2008-01-23 H.C. Starck GmbH Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
MX2007013600A (es) * 2005-05-05 2008-01-24 Starck H C Gmbh Metodo para revestir una superficie de bustrato y producto revestido.
US20060289139A1 (en) * 2005-06-24 2006-12-28 Fushan Zhang Retention and drainage in the manufacture of paper
JP4795157B2 (ja) * 2005-10-24 2011-10-19 新日本製鐵株式会社 コールドスプレー装置
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
BRPI0718237A2 (pt) * 2006-11-07 2013-11-12 Starck H C Gmbh Método para revestir uma superfície de substrato e produto revestido
US20080145688A1 (en) * 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
WO2008081585A1 (ja) * 2007-01-05 2008-07-10 Kabushiki Kaisha Toshiba スパッタリングターゲットとその製造方法
US8784729B2 (en) * 2007-01-16 2014-07-22 H.C. Starck Inc. High density refractory metals and alloys sputtering targets
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8246903B2 (en) * 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106413913A (zh) * 2014-04-15 2017-02-15 联邦科学与工业研究组织 使用冷喷涂生产预制件的方法
WO2018091000A1 (zh) * 2016-11-18 2018-05-24 华中科技大学 一种适用于零件与模具的复合增材制造方法
CN110508809A (zh) * 2019-08-29 2019-11-29 华中科技大学 一种增材制造与表面涂覆复合成形系统及方法
CN115338422A (zh) * 2022-06-29 2022-11-15 西北工业大学 一种提高毁伤后效压力的多层药型罩涂层的增材制造方法

Also Published As

Publication number Publication date
RU2009136708A (ru) 2011-04-10
KR101456725B1 (ko) 2014-10-31
ZA200906940B (en) 2011-06-29
EP2172292B1 (en) 2012-07-11
CN101713071B (zh) 2014-05-07
US20100086800A1 (en) 2010-04-08
KR20100039259A (ko) 2010-04-15
BRPI0904976A2 (pt) 2010-11-03
JP5725700B2 (ja) 2015-05-27
EP2172292A1 (en) 2010-04-07
JP2010090477A (ja) 2010-04-22
MX2009010724A (es) 2010-10-05
US8043655B2 (en) 2011-10-25
CA2681424A1 (en) 2010-04-06

Similar Documents

Publication Publication Date Title
CN101713071B (zh) 制备整体金属结构的方法以及由该方法制备的结构
Richer et al. CoNiCrAlY microstructural changes induced during cold gas dynamic spraying
JP2010090477A5 (zh)
WO2005079209A2 (en) Nanocrystalline material layers using cold spray
JP2019529696A (ja) 付加合成のための複合粒子を有するマルチマテリアル粉末
CA3070662A1 (en) Method for preparing powders for a cold spray process, and powders therefor
Cho et al. Manufacture and properties of cold spray deposited large thickness Cu coating material for sputtering target
Maier et al. A novel approach for manufacturing oxide dispersion strengthened (ODS) steel cladding tubes using cold spray technology
Shin et al. Effect of particle parameters on the deposition characteristics of a hard/soft-particles composite in kinetic spraying
Kim et al. Solid-state cold spray additive manufacturing of pure tantalum with extraordinary high-temperature mechanical properties
JP6475829B2 (ja) 層の製造方法
WO2008141593A1 (en) Method for production of sputtering targets
CN114990541B (zh) 高硬度材料涂层结构及其制备方法
Wang et al. Near-net-shape 95W–3.5 Ni–1.5 Fe thin-walled products produced by plasma spray forming
Enayati Formation of nanoscale layered structures and subsequent transformations during mechanical alloying of Ni60Nb40 powder mixture in a low energy ball mill
Wang et al. Sintering Behavior of Tungsten Heavy Alloy Products Made by Plasma Spray Forming
Yu et al. In situ observations of grain growth and recovery in cold sprayed Ni-Y2O3 and CP-Ni coatings using hot-stage TEM
WO2006137911A2 (en) Method and apparatus for an equal channel angular pressing (ecap) consolidation process for cryomilled nanocrystalline metal powders
Mil’man et al. Mechanical properties of Al–Cu–Fe alloys sintered at high pressure
US20220380868A1 (en) Thermo-mechanical Processing Of High-Performance Al-RE Alloys
KR20130117213A (ko) 초경합금의 박막 코팅방법
Wang et al. Near-Net-Shape Molybdenum Parts Produced by Plasma Spray Forming
Park et al. Microstructural features correlated with the electrical properties and plasticity-based deposition of silver particles through the vacuum kinetic spray process
Glumac Powder production and preparation.
Dillich US Bureau of Mines—Open Industry Briefing on Engineered Materials Research

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140507

Termination date: 20170929