WO2008141593A1 - Method for production of sputtering targets - Google Patents

Method for production of sputtering targets Download PDF

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Publication number
WO2008141593A1
WO2008141593A1 PCT/CZ2008/000054 CZ2008000054W WO2008141593A1 WO 2008141593 A1 WO2008141593 A1 WO 2008141593A1 CZ 2008000054 W CZ2008000054 W CZ 2008000054W WO 2008141593 A1 WO2008141593 A1 WO 2008141593A1
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WO
WIPO (PCT)
Prior art keywords
powdered
target
sputtering targets
production
microns
Prior art date
Application number
PCT/CZ2008/000054
Other languages
French (fr)
Inventor
Martin Bousa
Jan Kondas
David Jirku
Jiri Huml
Jindrich Novotny
Original Assignee
Safina, A.S.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Safina, A.S. filed Critical Safina, A.S.
Publication of WO2008141593A1 publication Critical patent/WO2008141593A1/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/02Coating starting from inorganic powder by application of pressure only
    • C23C24/04Impact or kinetic deposition of particles

Definitions

  • This invention relates to a technology used to a method for production of sputtering targets by spraying method -"Cold dynamic spray".
  • Sputtering targets are used, in particular, for applying metallic or oxide layers in large-area glass manufacturing processes, in engineering and automotive manufacturing industries for producing decorative or functional layers and in processes of manufacturing advanced electro-technical parts.
  • sputtering targets are manufactured by conventional metallurgical techniques, either by powder metallurgy as disclosed in the US Pat. Appl. No. 20070086909, wherein the sputtering target is produced by sintering initial metal powder through hot isostatic pressing, or by melting and casting afterwards in an appropriate form, by thermal plasma spraying, by electric arc or flame or by extrusion manufacturing methods.
  • the object of each of these technologies is to reach the most homogeneous and fine-grained structure.
  • Metallographic grain size is one of the critical factors of the sputtering targets functionality, and it may not exceed 100 microns. In principle it holds true that the smaller the grain in the target, the better the quality of layers sputtered afterwards by it and thus the lifetime and usability achieved by such a target increases, which brings fundamental economic and quality benefits to users of these targets.
  • tubular or flat inter-metallic sputtering targets manufactured by powder metallurgy must be subjected to sintering under high temperatures and generally in an inert atmosphere, during which time the density of the produced target reaches, at most, 85 % of the theoretical density of the material used.
  • Tubular or flat inter-metallic sputtering targets manufactured by thermal spraying from a plasma, arc or flame torch are applied directly to a support tube or plate and after spraying are thermally processed to eliminate internal strains arising from the sprayed material and between the applied layer and the support.
  • This method results in grain-growth in a product manufactured in this way and, in addition, the practical density of the target can reach up to 90 % of its theoretical density.
  • the Cold Dynamic Spray method utilises particles' ability to undergo plastic deformation upon impact on the support material surface and to consequently fuse together, when they exceed the critical speed, which is usually 500 m/s.
  • High- pressure device enabling oriented particle flow has been developed to achieve supersonic particle speed.
  • Helium, nitrogen or air is normally used as the carrying, i.e., accelerating, gas and the great benefit of this new technology, as opposed to thermal spraying of layers, is the fact that deposition takes place under low temperatures of up to approx. 600 0 C, depending on the type of material used for spraying, whereby the generation of mechanical strains inside the forming layer are prevented.
  • the aim of this invention is, specifically, a method for producing tubular or planar sputtering targets by spraying powdered metals or mixtures of powdered metals onto support material through a spray method -"Cold Dynamic Spray".
  • metal is intended to mean any element in the periodic table of elements, having the characteristics of a metal.
  • powdered material comprises powdered alloys of metals, and this can include any metal that forms alloys.
  • powdered material comprises mixtures of pure powdered metals or powdered alloys with powdered metal oxides.
  • Yet another embodiment comprises the powdered material made up of mixtures of powdered metal oxides and their mixtures.
  • metal oxides are intended to mean compounds of any element in the periodic table of elements, having metal properties with oxygen.
  • the method comprises spraying powdered materials, when velocity of individual powder particles reaches a speed of 500-1500 m/s, preferably a speed of 600-1000 m/s by using gas flow helium (He), nitrogen (N 2 ) or air, while powder with high kinetic energy undergoes plastic deformation on impact against support material, i.e., a tube in the case of tubular sputtering targets or a planar form in case of planar sputtering targets, bonds and forms a layer of desired thickness.
  • gas flow helium (He) gas flow helium
  • N 2 nitrogen
  • air gas flow helium
  • powder with high kinetic energy undergoes plastic deformation on impact against support material, i.e., a tube in the case of tubular sputtering targets or a planar form in case of planar sputtering targets, bonds and forms a layer of desired thickness.
  • Metals, in particular steel, glass, plastics, and paper may serve as the support material (carrier).
  • This method allows to produce sputtering targets with different thicknesses of the sputtered material layer, varying from 5 microns up to an unlimited layer thickness, typically up to 100 to 300mm, while eliminating the necessity of mechanical forming and thermal processing to achieve the required target structure.
  • no mechanical strains appear between the support plate and the sprayed target, and a fine-grained structure is formed that can be easily directed by selecting a suitable granulometry of the sprayed powder.
  • the significant advantage of the Cold Dynamic Spray rests in the form of a compact, homogeneous layer that is free from any internal mechanical strains, eliminating the need for any subsequent annealing and resulting in substantial savings in manufacturing expenses as well as increased quality of targets made in this way, which have a fine crystalline structure determined by selecting the powder grain size and reaching a density of 99 %, in comparison with the theoretical density of the material used for spraying, and with a target volume porosity of less then 0.5 %.
  • sputtering targets manufactured by Cold Dynamic Spraying is a uniform, fine-grained isotropic structure, which ensures, in contrast with other manufacturing methods, identical characteristics of the target in all its parts, and these characteristics can be easily controlled through the selection of appropriate parameters of the sprayed powder.
  • a substantial advantage of the described cold spraying method lies in the fact that it completely eliminates the aforementioned operations of fixing a target onto a support plate, as the target is formed directly onto the base plate, whereby the target is bonded with the support plate through plastic deformation brought on by impacting particles of the target powdered material.
  • Another benefit of this invention is the fact, that the Cold Dynamic Spray method, in comparison with the above state of the art, facilitates manufacturing processes of inter-metallic targets with a density of at least 99 % of the theoretical density of the given material, which again positively impacts the quality of the sprayed coating and the target lifetime.
  • a tubular target 25 000 g of silver powder was used, with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns, obtained by sieving of the entering raw material.
  • a silver target, i.e., a silver layer with uniform thickness of 22 mm was formed in the course of eight hours on the steel support tube by application of the Cold Dynamic Spray method, with supersonic particle speed and 380 0 C in temperature. Afterwards, a metallurgical cut-out was made from a section of the target as shown in Figure 1.
  • the grain size of the target is less than 32 microns, while porosity is less than 0.5 %. Then the target was subjected to sputtering and an evaluation was made by comparing it with a silver reference target manufactured by casting and subsequent forming followed by heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was 16 % longer.
  • a planar target 20 000 g of zinc alloy powder was used, containing 2 % of aluminium with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns, obtained by sieving the entering raw material.
  • a Zn target containing 2 % aluminium, i.e., a ZnAI2 layer with a uniform, 10 mm thickness was formed on the support steel plate by the Cold Dynamic Spray method, with supersonic particle speed and 250 0 C in temperature. Porosity of the target was less than 0.25 %.
  • the target was subjected to sputtering and an evaluation was made by comparing it with a ZnAI2 reference target manufactured by a plasma spraying method with heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was longer by 10 %.
  • Porosity of the target was less than 0.30 %. Afterwards, the target was subjected to sputtering and an evaluation was made by comparing it with a ZnA12 reference target manufactured by a plasma spraying method with heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was longer by 12 %.
  • TiO 2 powder 15 000 g was used, with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns and 750 g of Ti powder with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns.
  • a steel tube 115 mm in diameter, made of AISI316L material blasted with alumina powder was used as the support material.
  • the TiO 1 9 target i.e., a TiO 2 + Ti layer with uniform thickness of 20 mm was formed on the support steel tube by the Cold Dynamic Spray method, with supersonic particle speed and 380 0 C in temperature. Porosity was less than 0.25 %.
  • the target was subjected to sputtering and an evaluation was made by comparing it with a TiOi 9 reference target manufactured by a plasma spraying method with subsequent heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was longer by 14 %.
  • TiO 2 powder 5 000 g was used, with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns and 5 000 g of Ti powder with a fineness of 99.99 % and grain sizes ranging from 1 to 32 microns.
  • a steel tube 115 mm in diameter, made of AISI316L material blasted with alumina powder was used as the support material.
  • the TiO target i.e., a TIO2 + Ti layer with uniform thickness of 10 mm was formed on the support steel tube with the Cold Dynamic Spray method, with supersonic particle speed and 360 0 C in temperature. Porosity was less than 0.35 %.
  • the target was subjected to sputtering and an evaluation was made by comparing it with a TiO reference target manufactured by a plasma spraying method and subsequent heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was longer by 15 %.
  • Sputtering targets manufactured by the Cold Dynamic Spray method may replace sputtering targets manufactured by conventional technologies.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

A method for production of sputtering targets, in particular tubular or planar sputtering targets comprising deposition of metal powders, their mixture with metal oxides, and metal oxides by employing the 'Cold dynamic spray' spraying method. After formation of the sprayed layer and finishing its surface to the desired dimensions, the result is a product suitable for use in sputtering facilities for production of functional and decorative layers used in glass making, engineering, automobile manufacturing and electro-technical industries.

Description

Method for Production of Sputtering Targets
Technical Field
This invention relates to a technology used to a method for production of sputtering targets by spraying method -"Cold dynamic spray".
Background Art
Sputtering targets are used, in particular, for applying metallic or oxide layers in large-area glass manufacturing processes, in engineering and automotive manufacturing industries for producing decorative or functional layers and in processes of manufacturing advanced electro-technical parts.
Presently, sputtering targets are manufactured by conventional metallurgical techniques, either by powder metallurgy as disclosed in the US Pat. Appl. No. 20070086909, wherein the sputtering target is produced by sintering initial metal powder through hot isostatic pressing, or by melting and casting afterwards in an appropriate form, by thermal plasma spraying, by electric arc or flame or by extrusion manufacturing methods. The object of each of these technologies is to reach the most homogeneous and fine-grained structure. Metallographic grain size is one of the critical factors of the sputtering targets functionality, and it may not exceed 100 microns. In principle it holds true that the smaller the grain in the target, the better the quality of layers sputtered afterwards by it and thus the lifetime and usability achieved by such a target increases, which brings fundamental economic and quality benefits to users of these targets.
It is known from the state of the art that to achieve the requested, final microstructure of sputtering targets manufactured by conventional techniques, it is necessary — after casting or forming — to carry out re-crystallization annealing along with mechanical deformation of the targets. In addition, after manufacture with these technologies, it is generally necessary to attach targets to a support plate either by soldering, gluing or by mechanical means.
After compaction by pressing, tubular or flat inter-metallic sputtering targets manufactured by powder metallurgy must be subjected to sintering under high temperatures and generally in an inert atmosphere, during which time the density of the produced target reaches, at most, 85 % of the theoretical density of the material used.
Tubular or flat inter-metallic sputtering targets manufactured by thermal spraying from a plasma, arc or flame torch are applied directly to a support tube or plate and after spraying are thermally processed to eliminate internal strains arising from the sprayed material and between the applied layer and the support. This method results in grain-growth in a product manufactured in this way and, in addition, the practical density of the target can reach up to 90 % of its theoretical density.
Disclosure of Invention
The shortcomings mentioned above are eliminated with the subject of this invention, which is a method for production of sputtering targets by spraying - "Cold Dynamic Spray", comprising the acceleration of powdered metals, their alloys or mixtures with other metals and metal oxides or pure metal oxides (with ceramics) to speeds exceeding 500 m/s, ensuring sufficient plastic deformation and bonding of powder particles and inpact on the support surface. At the same time, this technology makes it possible to renovate used targets by supplementing the sputtered parts in the existing layer and thus enabling their problem-free recycling and repeated use.
The Cold Dynamic Spray method utilises particles' ability to undergo plastic deformation upon impact on the support material surface and to consequently fuse together, when they exceed the critical speed, which is usually 500 m/s. High- pressure device enabling oriented particle flow has been developed to achieve supersonic particle speed. Helium, nitrogen or air is normally used as the carrying, i.e., accelerating, gas and the great benefit of this new technology, as opposed to thermal spraying of layers, is the fact that deposition takes place under low temperatures of up to approx. 600 0C, depending on the type of material used for spraying, whereby the generation of mechanical strains inside the forming layer are prevented.
The aim of this invention is, specifically, a method for producing tubular or planar sputtering targets by spraying powdered metals or mixtures of powdered metals onto support material through a spray method -"Cold Dynamic Spray".
In accordance with the invention, metal is intended to mean any element in the periodic table of elements, having the characteristics of a metal.
Another embodiment of this invention is the fact that powdered material comprises powdered alloys of metals, and this can include any metal that forms alloys.
Another specific embodiment of this invention is the fact that powdered material comprises mixtures of pure powdered metals or powdered alloys with powdered metal oxides.
Yet another embodiment comprises the powdered material made up of mixtures of powdered metal oxides and their mixtures.
In the sense of this invention, metal oxides are intended to mean compounds of any element in the periodic table of elements, having metal properties with oxygen.
According to the invention the method comprises spraying powdered materials, when velocity of individual powder particles reaches a speed of 500-1500 m/s, preferably a speed of 600-1000 m/s by using gas flow helium (He), nitrogen (N2) or air, while powder with high kinetic energy undergoes plastic deformation on impact against support material, i.e., a tube in the case of tubular sputtering targets or a planar form in case of planar sputtering targets, bonds and forms a layer of desired thickness.
Metals, in particular steel, glass, plastics, and paper may serve as the support material (carrier).
This method allows to produce sputtering targets with different thicknesses of the sputtered material layer, varying from 5 microns up to an unlimited layer thickness, typically up to 100 to 300mm, while eliminating the necessity of mechanical forming and thermal processing to achieve the required target structure. According to the invention, no mechanical strains appear between the support plate and the sprayed target, and a fine-grained structure is formed that can be easily directed by selecting a suitable granulometry of the sprayed powder.
In comparison with thermal spraying processes used for production of sputtering targets, the significant advantage of the Cold Dynamic Spray rests in the form of a compact, homogeneous layer that is free from any internal mechanical strains, eliminating the need for any subsequent annealing and resulting in substantial savings in manufacturing expenses as well as increased quality of targets made in this way, which have a fine crystalline structure determined by selecting the powder grain size and reaching a density of 99 %, in comparison with the theoretical density of the material used for spraying, and with a target volume porosity of less then 0.5 %.
Another advantage of sputtering targets manufactured by Cold Dynamic Spraying is a uniform, fine-grained isotropic structure, which ensures, in contrast with other manufacturing methods, identical characteristics of the target in all its parts, and these characteristics can be easily controlled through the selection of appropriate parameters of the sprayed powder.
According to the invention, it was also found out, that by using the Cold Dynamic Spray method, it is possible to achieve the required structural parameters directly, during the process of forming the basic shape of the target, which eliminates costly operations of mechanical forming and annealing. At the same time, the Cold Dynamic Spraying enables production time to be reduced by 30 %.
A substantial advantage of the described cold spraying method lies in the fact that it completely eliminates the aforementioned operations of fixing a target onto a support plate, as the target is formed directly onto the base plate, whereby the target is bonded with the support plate through plastic deformation brought on by impacting particles of the target powdered material.
Another benefit of this invention is the fact, that the Cold Dynamic Spray method, in comparison with the above state of the art, facilitates manufacturing processes of inter-metallic targets with a density of at least 99 % of the theoretical density of the given material, which again positively impacts the quality of the sprayed coating and the target lifetime.
Brief Description of Drawing
The Invention will be explained in more detail with a drawing, illustrating in Figure 1 a metallurgical cut-out taken from a target; it is apparent that its grain is less than 32 microns.
Examples
The objective of the following examples is to illustrate the subject of this invention, while the given examples should in no way limit the scope of the invention, which is defined in the appended patent claims.
Example 1
To manufacture a tubular target, 25 000 g of silver powder was used, with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns, obtained by sieving of the entering raw material. A steel tube, 115 mm in diameter and made of AISI316L material blasted by alumina powder was used as the support material. A silver target, i.e., a silver layer with uniform thickness of 22 mm was formed in the course of eight hours on the steel support tube by application of the Cold Dynamic Spray method, with supersonic particle speed and 380 0C in temperature. Afterwards, a metallurgical cut-out was made from a section of the target as shown in Figure 1. It is apparent from the illustration, that the grain size of the target is less than 32 microns, while porosity is less than 0.5 %. Then the target was subjected to sputtering and an evaluation was made by comparing it with a silver reference target manufactured by casting and subsequent forming followed by heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was 16 % longer.
Example 2
To manufacture a planar target, 20 000 g of zinc alloy powder was used, containing 2 % of aluminium with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns, obtained by sieving the entering raw material. A steel plate made of AISI316L material blasted with alumina powder and coated with a graphite separation layer was used as the support material. Over a five-hour period, a Zn target containing 2 % aluminium, i.e., a ZnAI2 layer with a uniform, 10 mm thickness was formed on the support steel plate by the Cold Dynamic Spray method, with supersonic particle speed and 250 0C in temperature. Porosity of the target was less than 0.25 %. Afterwards, the target was subjected to sputtering and an evaluation was made by comparing it with a ZnAI2 reference target manufactured by a plasma spraying method with heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was longer by 10 %.
Example 3
To manufacture a tubular target, 9 300 g of nickel powder was used, with a purity of 99.99 % and grain sizes ranging from 1 to 80 microns and 700 g of vanadium powder with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns obtained by sieving of the entering raw material. A steel plate with a size of 100x300mm, made of AISI316L material blasted with alumina powder was used as the support material. Over a four hour period, the Ni target containing 7 % of vanadium, i.e., an NiV7 layer with uniform thickness of 38.7 mm was formed on the support steel plate with the Cold Dynamic Spray method, with supersonic particle speed and 300 0C in temperature. Porosity of the target was less than 0.30 %. Afterwards, the target was subjected to sputtering and an evaluation was made by comparing it with a ZnA12 reference target manufactured by a plasma spraying method with heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was longer by 12 %.
Example 4
To manufacture a tubular target, 15 000 g of TiO2 powder was used, with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns and 750 g of Ti powder with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns. A steel tube 115 mm in diameter, made of AISI316L material blasted with alumina powder was used as the support material. Over a six-hour period, the TiO1 9 target, i.e., a TiO2 + Ti layer with uniform thickness of 20 mm was formed on the support steel tube by the Cold Dynamic Spray method, with supersonic particle speed and 3800C in temperature. Porosity was less than 0.25 %. Afterwards, the target was subjected to sputtering and an evaluation was made by comparing it with a TiOi 9 reference target manufactured by a plasma spraying method with subsequent heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was longer by 14 %.
Example 5
To manufacture a tubular target, 5 000 g of TiO2 powder was used, with a purity of 99.99 % and grain sizes ranging from 1 to 32 microns and 5 000 g of Ti powder with a fineness of 99.99 % and grain sizes ranging from 1 to 32 microns. A steel tube 115 mm in diameter, made of AISI316L material blasted with alumina powder was used as the support material. Over a five-hour period, the TiO target, i.e., a TIO2 + Ti layer with uniform thickness of 10 mm was formed on the support steel tube with the Cold Dynamic Spray method, with supersonic particle speed and 360 0C in temperature. Porosity was less than 0.35 %. Afterwards, the target was subjected to sputtering and an evaluation was made by comparing it with a TiO reference target manufactured by a plasma spraying method and subsequent heat treatment. Lifetime of the target manufactured by the Cold Dynamic Spray method was longer by 15 %.
Industrial Applicability
Sputtering targets manufactured by the Cold Dynamic Spray method, disclosed in this invention, may replace sputtering targets manufactured by conventional technologies.

Claims

C L A I M S
1. A method for production of sputtering targets, in particular tubular or planar sputtering targets, characterized in that it comprises a deposition of powdered materials by the method of spraying - cold dynamic spray.
2. The method according to claim 1 , characterized in that the powdered material is a pure powdered metal or a mixture of pure powdered metals.
3. The method according to claim 1 , characterized in that the powdered materials are the metal alloy powders.
4. The method according to claim 1 , characterized in that the powdered materials are mixtures of pure powdered metals or powdered metal alloys with powdered metal oxides.
5. The method according to claim 1 , characterized in that the powdered materials are powdered metal oxides or mixtures thereof.
6. The method according to any of the preceding claims 1 to 5, characterized in that the grain size of the applied powdered material, ranges from 1 to 100 microns.
7. The method according to any of the preceding claims 1 to 6, characterized in that the speed of individual particles of the powdered material, ranges from 500 to 1500 m/s, preferably ranges from 600 to 1000 m/s.
8. The method according to any of the preceding claims 1 to 7, characterized in that the deposition of powdered material takes place under a temperature of approx. up to 600 0C.
9. The method according to any of the preceding claims 1 to 8, characterized in that the thickness of the sputtered powdered material layer is 5 microns at least.
10. The method according to any of the preceding claims 1 to 9, characterized in that the porosity of the final target is lower than 0.5 % of the total volume of the target.
PCT/CZ2008/000054 2007-05-22 2008-05-13 Method for production of sputtering targets WO2008141593A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CZ20070356A CZ2007356A3 (en) 2007-05-22 2007-05-22 Process for producing sputter targets
CZPV2007-356 2007-05-22

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103060793A (en) * 2013-02-01 2013-04-24 基迈克材料科技(苏州)有限公司 Refractory metal rotary sputtering target material prepared by cold spraying method
CN103930591A (en) * 2011-10-14 2014-07-16 株式会社爱发科 Target assembly and production method therefor
CN104817277A (en) * 2015-04-21 2015-08-05 福建省诺希科技园发展有限公司 Method for preparing radiation-proof glass by silver composite target and product
CN114231918A (en) * 2021-12-31 2022-03-25 东莞市精研粉体科技有限公司 Preparation method of large-size planar metal target

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ306441B6 (en) * 2014-12-05 2017-01-25 Safina, A.S. A method of manufacturing a metal body with a homogeneous, fine-grained structure using the cold spray technology; the metal body thus produced; and a method of repairing the dedusted metal bodies used

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1443871A (en) * 2003-04-25 2003-09-24 西安交通大学 Method for preparing ceramic coating layer
WO2006117145A2 (en) * 2005-05-05 2006-11-09 H.C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1443871A (en) * 2003-04-25 2003-09-24 西安交通大学 Method for preparing ceramic coating layer
WO2006117145A2 (en) * 2005-05-05 2006-11-09 H.C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103930591A (en) * 2011-10-14 2014-07-16 株式会社爱发科 Target assembly and production method therefor
TWI548764B (en) * 2011-10-14 2016-09-11 愛發科股份有限公司 Target assembly and manufacturing method thereof
CN103060793A (en) * 2013-02-01 2013-04-24 基迈克材料科技(苏州)有限公司 Refractory metal rotary sputtering target material prepared by cold spraying method
CN104817277A (en) * 2015-04-21 2015-08-05 福建省诺希科技园发展有限公司 Method for preparing radiation-proof glass by silver composite target and product
CN114231918A (en) * 2021-12-31 2022-03-25 东莞市精研粉体科技有限公司 Preparation method of large-size planar metal target

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