CN101681650A - 二氢吲哚二氮杂次甲基阳离子用于光学数据记录的用途 - Google Patents

二氢吲哚二氮杂次甲基阳离子用于光学数据记录的用途 Download PDF

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CN101681650A
CN101681650A CN200880008344A CN200880008344A CN101681650A CN 101681650 A CN101681650 A CN 101681650A CN 200880008344 A CN200880008344 A CN 200880008344A CN 200880008344 A CN200880008344 A CN 200880008344A CN 101681650 A CN101681650 A CN 101681650A
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phenyl
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C·克莱因
J-C·格拉赛特
L·鲁克
M·A·温特尔
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Clariant International Ltd
Clariant Finance BVI Ltd
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Abstract

本发明涉及二氢吲哚鎓二氮杂次甲基型阳离子与基于吡啶酮的偶氮金属配合物阴离子的染料盐在用于光学数据记录,优选用于使用波长至多450nm的激光器的光学数据记录的光学层中的用途。本发明进一步涉及一种能够采用蓝光激光器的辐射来记录及再现信息的一次写入多次读出(WORM)型光学数据记录介质,该介质于光学层中应用二氢吲哚鎓二氮杂次甲基型阳离子与基于吡啶酮的偶氮金属配合物阴离子的染料盐。

Description

二氢吲哚二氮杂次甲基阳离子用于光学数据记录的用途
技术领域
本发明涉及二氢吲哚鎓二氮杂次甲基型阳离子与基于吡啶酮的偶氮金属配合物阴离子的染料盐在用于光学数据记录,优选用于使用波长至多450nm的激光器的光学数据记录的光学层中的用途。
本发明进一步涉及一种能够采用蓝光激光器辐射来记录及再现信息的一次写入多次读出(WORM)型光学数据记录介质,该介质于光学层中应用二氢吲哚鎓二氮杂次甲基型阳离子与基于吡啶酮的偶氮金属配合物阴离子的染料盐。
背景技术
近来,有机染料已在二极管-激光器光学数据储存领域中引起了相当大的关注。WORM型光学数据记录介质,如商业可记录的压缩光盘(CD-R)及可记录的数字通用光盘(DVD-R),可在记录层中含有基于酞菁、半菁、菁及金属化偶氮结构的染料。这些染料在其各自领域中适合于激光器波长标准。染料介质的其它一般要求为强吸收、高反射率、高记录敏感性、光敏感性增强、低热导率以及光及热稳定性、储存持久性及无毒性。良好读出稳定性也为重要标准,这意谓着在给定激光强度下的高循环数目,及染料在旋涂工艺中通常应用的有机溶剂中的足够溶解度。
在这样的有机染料型光学数据记录介质的记录区,光学性能不仅因由染料的热分解所致的光学特性改变及层厚度降低而改变,而且也因基材变形而改变。
对于CD-R及DVD-R而言此记录原理相同,差异在于光斑尺寸及所用激光的波长。CD-R在770nm至830nm的波长下可写入,而DVD-R通过使用更新近的压缩高效红光二极管激光器在600nm至700nm的波长下可写入,从而与常规CD相比实现数据存储密度方面6至8倍的改进。
然而,考虑到例如近来电子网路(例如,国际互联网路)的普及及高清晰度电视(HDTV)广播的出现等因素,需要能够以甚至更大容量记录图像信息的廉价且方便的记录介质。虽然目前DVD-R足以充当高容量记录介质,但对更大容量及更高密度的需求已增加。
光盘(
Figure G200880008344XD00022
光盘为由Hitachi Ltd.、LGElectronics Inc.、Matsushita Electric Industrial Co.Ltd.、Pioneer Corporation、Royal Philips Electronics、SamsungElectronics Co.Ltd.、Sharp Corporation、Sony Corporation、Thomson Multimedia研发的标准物)或HD-DVD光盘(由Toshiba和NEC研发的标准物)将成为光学数据记录技术中的下一个里程碑。通过这些新规格,数据储存可增加直至对于12cm直径光盘而言每一记录层27G字节。通过采用405nm波长的蓝光二极管激光器(GaN或SHG激光器二极管),可进一步减小信息坑尺寸及磁道间隔,又使得储存容量增加一个数量级。
这些光学数据记录介质的构造在本领域是已知的。光学记录介质优选包含具有用于激光束跟踪的导引凹槽的基材、含有有机染料作为主要组分的记录层(此记录层在下文中也称为光学层或染料层)、反射层及保护层。当穿过基材进行记录/读出时,使用透明基材。作为这样的透明基材,例如可使用由例如聚碳酸酯、聚甲基丙烯酸酯或无定形聚烯烃的树脂制成的这样的基材、由玻璃制成的这样的基材或具有于玻璃上形成的由辐射可固化树脂(即,可光致聚合树脂)制成的树脂层的这样的基材。高级光学数据记录介质可包含另外的层,例如保护层、粘接层或甚至额外的光学记录层。
对于蓝光二极管激光器光学数据储存,文献中已提出多种染料化合物。
WO 2006/106110A公开了具有三乙基铵或具有可购得的阳离子型C.I.碱性黄染料的阳离子作为抗衡离子的阴离子型偶氮金属配合物染料(C.I.代表染料索引:国际染料索引(colour indexinternational),第4版,
Figure G200880008344XD00031
Society of Dyers and Colourists andAmerican Association of Textile Chemists and Colorists 2002)。
遗憾的是,迄今为止所述的染料化合物仍显示阻碍其令人满意地用作用于光学数据储存的染料的缺点。
发明内容
仍需要一种能够以高密度记录数据、具有改进的记录特性且具有改进的读出稳定性的光学数据记录介质,也需要以超过1倍的速度记录(也即,2倍速及4倍速记录),因此需要一种具有改进的记录特性的光学数据记录介质。
该目的意外地通过使用二氢吲哚鎓二氮杂次甲基型阳离子与基于吡啶酮的阴离子型偶氮金属配合物染料的盐而实现。
在下文中,除非另有说明,否则“卤素”表示F、Cl、Br或I,优选F、Cl或Br,更优选F或Cl,甚至更优选Cl;除非另有说明,否则“卤离子”表示F-、Cl-、Br-或I-,优选Cl-或I-;“烷基”表示直链及支链烷基;且“烷氧基”表示直链及支链烷氧基;除非另有说明,否则任何烷基及环烷基是未被取代的,部分或完全被卤素取代的。
本发明的主题是式(I)化合物在光学层中,优选在用于光学数据记录的光学层中,更优选作为染料在用于光学数据记录的光学层中的用途,该化合物为染料盐,
Figure G200880008344XD00032
Cat+为式(II)化合物;
Figure G200880008344XD00033
An-为式(III)化合物;
Figure G200880008344XD00041
M表示三价金属原子,优选选自化学元素周期表第3、4、5、6、7、8、9、10、11及12族;
R9为C1-4烷基或NH-苯基;
R1a选自H、O-C1-4烷基、CO-苯基、O-苯基及S-苯基;
R2a选自H、正丙基、异丙基、O-C1-4烷基、CO-苯基、O-苯基及S-苯基;
前提条件是,如果R2a为甲氧基或H,则R1a不为H;
R10、R11、R12及R13相同或不同,且彼此独立地选自由以下基团组成的组:H、CN、CF3、卤素、NO2、OH、SH、SO2-NR21R22、CO-R20、SO2R20、CO-NR21R22
C1-10烷基、C3-10环烷基,该C1-10烷基及该C3-10环烷基彼此独立地未经取代或经1至4个相同或不同的取代基取代,这些取代基彼此独立地选自C1-10烷基、卤素、OH、CN、CF3、C6-12芳基及NR21R22
C6-C12芳基、O-C6-12芳基、S-C6-12芳基,该C6-12芳基及该-C6-12芳基及该S-C6-12芳基未经取代或经1至4个相同或不同的取代基取代,这些取代基彼此独立地选自C1-10烷基、C3-10环烷基、OH、NO2、CN、卤素、CF3、C6-12芳基、O-C1-10烷基、S-C1-10烷基及NR21R22
O-C1-10烷基、S-C1-10烷基、O-C3-10环烷基、S-C3-10环烷基、NHCOR20及NR21R22
所述R21及R22残基相同或不同,且彼此独立地选自H、C1-10烷基、C6-12芳基及C1-12烷基-NR23R24
所述R23及R24残基相同或不同,且彼此独立地选自H、C1-10烷基及C6-12芳基;
所述R20残基相同或不同,且彼此独立地选自OH、C1-6烷基、C6-10芳基及O-C1-6烷基;
本发明的另一主题是一种式(I)化合物,其为染料盐。
优选地,
M选自Co、Cr、Fe及Al;
R9为C1-4烷基;
R1a选自H、甲氧基、CO-苯基、O-苯基及S-苯基;
R2a选自H、异丙基、甲氧基、CO-苯基、O-苯基及S-苯基;
前提条件是,如果R2a为甲氧基或H,则R1a不为H;
R12为NO2
R11为H或NO2
R10为H或NHCOCH3
R13为H。
更优选地,
M选自Co、Fe及Al,优选为Co;
R9为正丁基;
R1a选自H、甲氧基、CO-苯基、O-苯基及S-苯基;
R2a选自H、异丙基及甲氧基;
前提条件是,如果R2a为甲氧基或H,则R1a不为H;
R12为NO2
R10为H或NHCOCH3
R11及R13为H。
尤其,
Cat+选自由式(1)、(2)、(3)、(4)、(5)及(7)的化合物组成的化合物组;
An-为式(10)化合物或式(11)化合物。
Figure G200880008344XD00071
更尤其,式(I)化合物选自式(10_1)、(10_2)、(10_3)、(10_4)、(10_5)、(11_1)及(11_2)的化合物;
甚至更尤其为式(10_2)化合物;这些化学式如表(A)中定义。
Figure G200880008344XD00081
本发明的另一主题是一种选自式(10_1)、(10_2)、(10_3)、(10_4)、(10_5)、(11_1)及(11_2)的化合物的化合物,优选为式(10_2)化合物,进一步其于光学层中,优选在用于光学数据记录的光学层中,更优选作为染料于用于光学数据记录的光学层中的用途。
式(I)化合物的制备
本发明的另一主题是一种制备式(I)化合物以及如上所述的式(I)的所有优选方面中的式(I)化合物,尤其式(10_1)、(10_2)、(10_3)、(10_4)、(10_5)、(11_1)及(11_2)的化合物的方法,
其是通过相应的前体盐之间的复分解反应,也即式(III_6)化合物与式(II_盐)化合物之间的复分解反应而进行,
Figure G200880008344XD00082
Figure G200880008344XD00083
式(III)化合物也在如上所述的式(III)的所有优选方面中,
式(II)化合物也在如上所述的式(II)的所有优选方面中,
阴离子(II)选自卤离子、硫酸根及甲基硫酸根,优选为氯离子、碘离子、硫酸根及甲基硫酸根,甚至更优选为氯离子及碘离子。
本发明的含义内的复分解反应表示不同盐之间的离子交换。
如表(AA)中所定义的式(III_6)化合物,尤其式(III_6_R10 acet)化合物,更尤其式(11_6)化合物,
Figure G200880008344XD00091
Figure G200880008344XD00092
优选通过式(IV)化合物,尤其式(IV_R10 acet)化合物,与金属盐的配合反应来制备,其中R9、R10、R11、R12及R13具有如上所述的相同含义,也包括所有其优选实施方案,
Figure G200880008344XD00093
Figure G200880008344XD00101
更尤其式(IV_11)化合物,
其中式(IV)化合物优选通过相应的重氮组分与相应的偶合剂的偶氮偶合反应来制备。
式(IV)化合物称为偶氮配体。
配合反应使用所需式(IV)化合物与金属盐之间的化学计量比来进行;反应物中的每一种可相对于其它反应物过量使用,优选使用1当量金属盐及2当量式(IV)化合物。
优选地,式(III_6)化合物通过1当量金属盐的溶液与2当量式(IV)化合物的沸腾溶液的配合反应来制备。
在本发明的一种优选实施方案中,金属盐的金属为三价金属。在本发明的另一优选实施方案中,金属盐的金属为二价金属,且在此情况下配合反应是在有氧条件下在相对于每当量配体优选2.5至4,更优选2.9至3.2,尤其3当量的三乙胺存在下进行。这确保二价金属原子在配合反应期间转化成三价金属原子,且确保金属原子结合入配合物中其四重配位中,从而在最终配合物上产生阴离子电荷。
可使用多于一种的金属盐,优选2种或3种金属盐的混合物,优选以所需相对于偶氮配体的化学计量量使用。
可将偶氮配体添加至金属盐中,或反之亦然。
在本发明的另一优选实施方案中,在配合反应期间已存在式(II_盐)化合物形式的Cat+
复分解反应优选通过将相应的式(III_6)化合物与相应的式(II_盐)化合物混合来进行。
配合反应及复分解反应可在悬浮液中或在溶液中进行,优选其在悬浮液中进行。
可用于配合反应中或用于复分解反应的溶剂为水、溶剂及其混合物。溶剂优选选自C1-8醇、腈(优选乙腈)、丙酮、芳族溶剂(例如甲苯或氯苯)、DMF、DMSO、NMP。
更优选溶剂为C1-8醇(尤其乙醇)及乙腈。
也可已在合成式(I)化合物或其前体的较早阶段,优选在偶氮偶合反应(其优选用于制备偶氮配体)之前、期间或之后,更优选在偶氮偶合反应之后,将金属盐添加至所得配体悬浮液或溶液中。
尤其优选地,在合成之后分离偶氮配体,且在单独的步骤中进行配合反应。
尤其优选地,在合成之后分离式(III_6)化合物,且在单独的步骤中进行复分解反应。
优选地,在配合反应中配体以悬浮液形式存在。
配合反应及复分解反应通常在20℃至200℃之间的温度下,优选在50℃至170℃之间的温度下,尤其优选在80℃至150℃之间的温度下进行,更尤其优选地,配合反应及复分解反应是在回流温度下在大气压下进行。
优选地,式(I)化合物是按照标准方法来分离,通常其形成沉淀物,优选将其通过过滤来分离且加以干燥。
优选地,配合反应是在有氧条件下,在三乙胺存在下,使用衍生自二价金属的金属盐来进行,该二价金属盐更优选为二价钴盐,甚至更优选为CoSO4*7H2O。
当制备式(I)化合物时,尤其当通过复分解反应制备它们时,且也取决于式(III_6)化合物与式(II_盐)化合物之间的摩尔比,式(III_6)化合物的阳离子可能不被式(II_盐)化合物的阳离子完全交换,从而产生包含式(III_6)化合物、(I)化合物及可能地式(II_盐)化合物的化合物混合物。
优选地,使用如表(AA)中所指定的式(10_6)或(11_6)的化合物来进行复分解反应。
Figure G200880008344XD00121
本发明的另一主题是一种式(11_6)化合物及该式(11_6)化合物用于制备式(I)化合物的用途。
式(10_6)化合物从WO 2006/106110A中是已知的。
Cat+的制备
本发明的另一主题是式(II_盐)化合物,尤其如表(A1)中所定义的式(1_I)、(2_I)、(3_I)、(4_I)、(1_C1)、(3_C1)、(5_C1)及(7_I)的化合物的制备,其是通过式(Vd)化合物与甲基碘或与硫酸二甲酯的烷基化反应进行,在式(Vd)化合物中R1a及R2a具有如上所述的相同含义,也包括所有其优选实施方案。
该烷基化反应是在非水性溶剂及在其混合物中进行。非水性溶剂优选选自芳族溶剂、醇、酮或乙腈;更优选选自酮或经取代的苯,甚至更优选使用乙基甲基酮或氯苯。
优选地,在烷基化反应之后,尤其在使用硫酸二甲酯作为烷基化剂的情况下,添加卤化钠,优选氯化钠。该添加的卤离子可取代由烷基化反应所产生的碘离子、甲基硫酸根或硫酸根。优选地,在使用硫酸二甲酯进行烷基化反应的情况下,在烷基化反应之后添加氯化钠,且硫酸根至少部分地被氯离子交换。
烷基化反应优选使用过量烷基化剂来进行,更优选地烷基化剂与式(Vd)化合物的摩尔比为5∶1。
烷基化反应优选在0℃至200℃,更优选20℃至100℃,甚至更优选30℃至90℃的温度下进行。
烷基化反应时间优选为10分钟至1周。
优选地,式(II_盐)化合物是按照标准方法来分离,在沉淀物的情况下优选通过过滤来分离,优选随后加以干燥。
式(Vd)化合物优选通过相应的式(Va)化合物(也称为偶合剂)与相应的式(Vb)化合物(也称为重氮组分)的偶氮偶合反应来制备;式(Vb)化合物优选通过相应的式(Vc)化合物(也称为胺化合物)的重氮化反应来制备;
Figure G200880008344XD00131
其中R1a及R2a具有如上所述的相同含义,也包括所有其优选实施方案。
重氮组分优选具有氯离子Cl-作为抗衡离子,因为胺化合物的重氮化反应优选在盐酸水溶液中进行。
胺化合物及偶合剂为已知物质且可根据或类似于已知的操作步骤来制备。
偶氮偶合反应是在水、非水性溶剂及在其混合物中进行。非水性溶剂优选选自由以下物质组成的组:醇,更优选甲醇、乙醇、丙醇、丁醇、戊醇;偶极非质子溶剂,优选二甲基甲酰胺(DMF)、DMSO、二甲基乙酰胺或N-甲基-吡咯烷酮(NMP)及吡啶;及水不可混溶性溶剂,优选甲苯或氯苯。更优选地,偶氮偶合反应是在水、甲醇或其混合物中进行。
偶氮偶合反应优选是采用偶合组分与重氮组分的化学计量比进行。偶氮偶合反通常在-30℃至100℃的温度下进行,优选-10℃至30℃的温度,且尤其优选-5℃至20℃的温度。
偶氮偶合反应可在酸性介质以及碱性介质中进行。优选pH<10,尤其选择pH为3至9。
优选地,偶氮配体是按照标准方法来分离,在沉淀物的情况下,优选是通过过滤来分离,优选随后加以干燥。
式(Vd)化合物的烷基化反应及可能的后续阴离子交换导致生成式(II_盐)化合物以及也生成具有相同的式(II)化合物但不同的阴离子(II)的式(II_盐)化合物的混合物。
本发明的另一主题是式(II_盐)化合物,其中式(II)化合物优选选自式(1)、(2)、(3)、(4)、(5)及(7)化合物,阴离子(II)优选选自卤离子、硫酸根及甲基硫酸根,优选为氯离子、碘离子、硫酸根及甲基硫酸根,甚至更优选为氯离子及碘离子;
尤其为如表(A1)中所定义的式(1_I)、(2_I)、(3_I)、(4_I)、(1_C1)、(3_C1)、(5_C1)及(7_I)的化合物,更尤其为式(2_I)化合物;
及式(II_盐)化合物(也包括如上所定义的所有其优选实施方案)用于制备式(I)化合物的用途。
本发明的另一主题是式(Vd)化合物,其中R1a及R2a具有如上所述的相同含义,也包括所有其优选实施方案,尤其为式(Vd_1)、(Vd_2)、(Vd_3)、(Vd_4)、(Vd_5)或(Vd_7)的化合物,更尤其为式(Vd_2)化合物;
Figure G200880008344XD00151
及式(Vd)化合物(也包括如上所定义的所有其优选实施方案)用于制备式(II_盐)化合物的用途。
式(IV)化合物的制备
R10不为NHCOCH3的情况下的式(IV)化合物为已知化合物且可根据或类似于例如如WO 2006/106110A或本申请中所述的已知操作步骤来制备。
R10为NHCOCH3的情况下的式(IV)化合物,尤其式(IV_R10 acet)化合物,更尤其式(IV_11)化合物,优选通过相应的式(IVa)化合物(也称为偶合剂)与相应的式(IVb)化合物(也称为重氮组分)的偶氮偶合反应来制备;式(IVb)化合物优选通过相应的(IVc)化合物(也称为胺化合物)的重氮化反应来制备;
Figure G200880008344XD00161
其中R9、R11、R12及R13具有如上所述的相同含义,也包括所有其优选实施方案;在制备式(IV_11)化合物的情况下,如式(IVa_11)、(IVb_11)及(IVc_11)中所示,R9为正丁基,R11及R13为H且R12为硝基。
重氮组分优选具有氯离子Cl-作为抗衡离子,因为胺化合物的重氮化反应优选在盐酸水溶液中进行。
胺化合物及偶合剂为已知物质且可根据或类似于已知操作步骤来制备。
偶氮偶合反应是在水、非水性溶剂及其混合物中进行。非水性溶剂优选选自由以下物质组成的组:醇,更优选甲醇、乙醇、丙醇、丁醇、戊醇;偶极非质子溶剂,优选二甲基甲酰胺(DMF)、DMSO、二甲基乙酰胺或N-甲基-吡咯烷酮(NMP)及吡啶;及水不可混溶性溶剂,优选甲苯或氯苯。更优选地,偶氮偶合反应是在水中进行。
偶氮偶合反应优选采用偶合组分与重氮组分的化学计量比进行。偶氮偶合反通常在-30℃至100℃的温度下进行,优选-10℃至30℃的温度,且尤其优选-5℃至20℃的温度。
偶氮偶合反应可在酸性介质以及碱性介质中进行。优选pH<10,尤其选择pH为3至9。
优选地,偶氮配体是按照标准方法来分离,在沉淀物的情况下优选通过过滤来分离,优选随后加以干燥。
本发明的另一主题是一种式(IV_R10 acet)化合物,尤其式(IV_11)化合物,及式(IV_R10 acet)化合物,尤其式(IV_11)化合物作为配体,优选作为偶氮金属配合物染料中的配体的用途。
本发明的另一主题是一种优选用于光学数据记录的光学层,其包含至少一种式(I)化合物(该式(I)化合物也在所有其所述实施方案中),尤其至少一种式(10_1)、(10_2)、(10_3)、(10_4)、(10_5)、(11_1)或(11_2)的化合物;及该光学层用于光学数据记录介质的用途。本发明的光学层也可包含两种或更多种,优选两种或三种,更优选两种式(I)化合物的混合物。因此,本发明的另一主题是一种光学数据记录介质,其包含含至少一种式(I)化合物的光学层。
此外,本发明涉及一种制造优选用于光学数据记录的光学层的方法,其包含以下步骤:
(a)提供基材,
(b)将至少一种式(I)化合物,尤其至少一种式(10_1)、(10_2)、(10_3)、(10_4)、(10_5)、(11_1)或(11_2)的化合物溶解于有机溶剂中以形成溶液,
(c)将溶液(b)涂布于基材(a)上,
(d)蒸发溶剂以形成光学层。
(a)基材
充当施加至其上的各层的载体的基材有利地为半透明的(透射率T>10%)或优选为透明的(透射率T>90%)。载体可具有0.01至10mm,优选0.1至5mm的厚度。
合适基材为例如玻璃、矿物、陶瓷及热固性或热塑性塑料。优选载体为玻璃及均聚物或共聚物塑料。合适塑料为例如热塑性聚碳酸酯、聚酰胺、聚酯、聚丙烯酸酯及聚甲基丙烯酸酯、聚氨酯、聚烯烃、聚氯乙烯、聚偏二氟乙烯、聚酰亚胺、热固性聚酯及环氧树脂。最优选基材为聚碳酸酯(PC)或聚甲基丙烯酸甲酯(PMMA)。
基材可为纯物质形式或也可包含常规添加剂,例如UV吸收剂作为光学层的光稳定剂。
基材有利地在350nm至500nm范围的至少一部分上为透明的,从而其可透过至少90%的写入或读出波长的入射光。
(b)有机溶剂
有机溶剂选自C1-8醇、经卤素取代的C1-8醇、C1-8酮、C1-8醚、经卤素取代的C1-4烷烃、腈(优选为乙腈)或酰胺或其混合物。
优选C1-8醇或经卤素取代的C1-8醇为例如甲醇、乙醇、异丙醇、双丙酮醇(DAA)、2,2,3,3-四氟丙-1-醇、三氯乙醇、2-氯乙醇、八氟戊醇或六氟丁醇,更优选为2,2,3,3-四氟丙-1-醇。
优选C1-8酮为例如丙醇、甲基异丁基酮、甲基乙基酮或3-羟基-3-甲基-2-丁酮。
优选经卤素取代的C1-4烷烃为例如氯仿、二氯甲烷或1-氯丁烷。
优选酰胺为例如DMF、二甲基乙酰胺或NMP。
(c)涂布方法
合适涂布方法为例如浸渍、浇注、刷涂、刮涂及旋涂以及在高真空下进行的气相沉积法。当使用浇注法时,通常使用于有机溶剂中的溶液。当使用溶剂时,应注意所用载体对所述溶剂不敏感。优选通过采用染料溶液旋涂来施加光学层。
(d)光学层
光学层优选布置于透明基材与反射层之间。记录层的厚度为10nm至1000nm,优选为30nm至300nm,更优选为70nm至250nm,尤其为约80nm,例如60hm至120hm。
光学层包含式(I)化合物,其量优选足以对折射率产生实质影响,例如为光学层总重量的至少30重量%,更优选为至少60重量%,最优选为至少80重量%。
另外的常规组分为稳定剂(例如1O2-、三线态或发光猝灭剂)、熔点降低剂、分解促进剂或光学数据记录介质中已描述的任何其他添加剂。优选根据需要添加稳定剂或荧光猝灭剂。
稳定剂(1O2-、三线态或发光猝灭剂)为例如含N或S的烯醇盐、酚盐、双酚盐、硫醇盐或双硫醇盐的金属配合物;受阻酚及其衍生物,例如邻羟基苯基-三唑或邻羟基苯基-三嗪,或其他UV吸收剂,例如位阻胺(TEMPO或HALS,以及氮氧化物或NOR-HALS);且也如阳离子二亚铵,ParaquatTM或Orthoquat盐,例如
Figure G200880008344XD00191
IRG 022、
Figure G200880008344XD00192
IRG 040;视情况也如自由基离子,例如N,N,N′,N′-四(4-二丁基氨基苯基)-对亚苯基胺-六氟磷酸铵、六氟锑酸铵或高氯酸铵。后者可自Organica(Wolfen/DE)购得;牌号可自Nippon Kayaku Co.Ltd.购得。
在一个优选方面中,本发明提供一种适用于在350-450nm,优选405nm附近的激光波长范围内,例如WORM光盘格式的高密度记录材料的光学层。
光学数据记录介质的制备
制造包含本发明的光学层的光学数据记录介质的方法通常包含以下附加步骤:
(e)将金属层(也称为反射层)施加至光学层上,
(f)施加基于聚合物的第二层(也称为覆盖层或保护层)以完成光盘。
(e)反射层
金属反射层的施加优选通过溅射、真空气相沉积或通过化学气相沉积(CVD)来实现。溅射技术对于金属反射层的施加尤其优选。
适用于反射层的反射材料尤其包括提供对用于记录及重放的激光器辐射的良好反射的金属,例如元素周期表的第III、IV及V主族的金属及副族的金属。Al、In、Sn、Pb、Sb、Bi、Cu、Ag、Au、Zn、Cd、Hg、Sc、Y、La、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Fe、Co、Ni、Ru、Rh、Pd、Os、Ir、Pt、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及Lu及其合金尤其合适。由于其高反射率及易于制造而优选铝、银、铜、金或其合金的反射层。
(f)覆盖层
适用于覆盖层的材料包括塑料,其是以薄层形式直接地或借助于粘接层施加至载体或最上层上。覆盖层的材料可例如与基材的材料相同。选择可进一步改性的具有良好表面性能的机械及热稳定性塑料是有利的。
塑料可为热固性塑料及热塑性塑料。优选经辐射固化(例如,使用UV辐射)的保护层,其制造尤其简单且经济。已知许多种辐射可固化材料。辐射可固化单体及低聚物的实例为二醇、三醇及四醇的丙烯酸酯及甲基丙烯酸酯,芳族四羧酸与在氨基的至少两个邻位上具有C1-C4烷基的芳族二胺的聚酰亚胺,及具有二烷基马来酰亚胺基(例如,二甲基马来酰亚胺基)的低聚物。
本发明的高密度光学数据记录介质因此优选为可记录光盘,其包含:第一基材,其为具有凹槽的透明基材;光学层(记录层),其使用式(I)化合物形成于第一基材表面上;反射层,其形成于光学层上;第二基材,其为采用连接层连接至反射层的透明基材。
本发明的光学数据记录介质优选为WORM型可记录光盘。其可用作例如可播放式HD-DVD(高密度数字通用光盘)或
Figure G200880008344XD00201
光盘,用作计算机的储存介质或用作识别及安全卡或用于制造衍射光学元件(例如全息图)。
本发明的光学数据记录介质也可具有另外的层,例如干涉层。也可构造具有多个(例如两个)记录层的光学数据记录介质。这些材料的结构及使用为本领域技术人员所已知。如果存在,则优选布置于记录层与反射层之间和/或记录层与基材之间且由TiO2、Si3N4、ZnS或有机硅树脂的介电材料组成的干涉层。
本发明的这些光学数据记录介质可通过本领域中已知的方法制造。
读出方法
本发明的光学数据记录介质的结构主要由读出方法决定;已知的功能原理包括测量透射率或优选反射率的变化,但也已知测量例如荧光,代替透射率或反射率。
当为了反射率变化而构造光学数据记录介质时,可使用以下结构:透明载体/记录层(任选地为多层的)/反射层及(如果适宜)保护层(不必须为透明的);或载体(不必须为透明的)/反射层/记录层及(如果适宜)透明保护层。在第一种情况中,光自载体侧入射,而在后者情况中,辐射自记录层侧或当适用时自保护层侧入射。在两种情况中,光检测器均位于与光源相同的一侧。根据本发明可使用的记录材料的首先提及的结构通常为优选的。
当为了光透射率改变而构造光学数据记录介质时,考虑以下不同结构:透明载体/记录层(任选地为多层的)及(如果适宜)透明保护层。用于记录及用于读出的光可自载体侧或自记录层侧或当适用时自保护层侧入射,在此情况下光检测器总是位于相对侧。
合适激光器为具有330-500nm波长的那些激光器,例如具有405至414nm波长的市售激光器,尤其为半导体激光器。例如精确地通过根据标记长度调制激光器及将其辐射聚焦于记录层上来进行记录。由专业文献已知,目前正在研发也可能适合于使用的其他方法。
本发明的方法允许以很大可靠性及稳定性储存信息,其突出之处在于非常好的机械及热稳定性及高光稳定性及信息坑的清晰边界区。特别的优点包括高对比度、低抖动及意外地高的信/噪比,以使得实现优异读出。
信息的读出根据本领域已知的方法通过使用激光器辐射记录吸收率或反射率的变化来进行。
本发明相应地也涉及一种光学数据记录、储存及重放信息的方法,其中使用本发明的光学数据记录介质。记录及重放有利地在330至500nm的波长范围中进行。
式(I)化合物在用于本发明的光学数据记录介质的光学层中时提供尤其优选的性能。他们具有当以固态薄膜形式使用时所证实的所需光学特性:
·有利地均匀、无定形及低散射性光学层,
·在吸收谱带的较长波长侧翼下的高折射率,其优选在330至500nm范围内实现1.0至3.0的折射率的n值,
·在高功率密度的激光器辐射下的高敏感性及在所需光谱范围内的良好重放特性,
·与本领域中已知的染料相比增强的光敏感性及稳定性(在日光中及在低功率密度的激光器辐射下),
·均一指令码宽度及高对比度,
·在如对于蓝光激光器应用而言优选的330nm与500nm之间、更确切而言400至500nm的优选范围内的吸收最大值(λmax)
·在180℃与300℃、更确切而言250℃至300℃之间的优选温度范围内的分解点(DP),
·充分放热(HR)。
化合物的记录效能与对于光盘所测量的特定参数有关,如:
·低仿真位错误率(SbER)
·低内部奇偶校验错误率(PI错误)
·高反射率(R)
·低激光器记录功率(Pw:功率,或OPC:最佳功率控制):越低越好
·不同激光器读出功率下的良好读出稳定性
·适当的局部响应信噪比(PRSNR):越高越好
吸收边缘甚至在固相中意外地为陡峭的。
式(I)化合物也显示符合热要求的180℃至350℃的窄分解温度。另外,这些化合物在有机溶剂中显示高溶解度,这对于制造光学层的旋涂法而言为理想的。
由于使用本发明的染料,本发明的记录介质有利地具有均匀、无定形及低散射的记录层。另外的优点为日光中及在0.4mW激光器辐射下的光稳定性,结合在中等激光器辐射下的高敏感性,这意谓着尽可能低的功率密度(OPC对于1倍速优选小于8.0mW且对于2倍速优选小于11mW),良好的热及储存稳定性。尤其在以较高速度记录的情况下,所需OPC应尽可能低。
具体实施方式
实施例
UV-vis
对于UV-vis光谱,化合物的λmax及ε值是通过使用UV-vis分光光度计来测定,将化合物溶解于CH2Cl2、DMSO或tfp中。通过平衡对于三种不同浓度的化合物溶液进行的测量来获得所述值。
熔点(MP)
对于熔点的测定,将化合物或组合物引入玻璃毛细管中。使用以下概况来加热毛细管:20℃至350℃的温度范围,2℃/分钟的加热速率。
热分解:分解点(DP)及放热(HR)
对于DP及HR的测定,将化合物引入密封铝盘中。分析条件如下:25℃至400℃的温度范围,10℃/分钟的加热速率,50毫升/分钟的氮气流速。数值通过单次测量来测定。另外,在测量熔点的同时也观察热分解。
局部响应信噪比(PRSNR)
PRSNR的定义及测量技术描述于可购自DVD Format LogoLicensing Co.,Ltd.的书中,例如Annex H of Version 0.9,PART 1Physical Specifications,DVD Specifications for High DensityRead-Only Disk。PRSNR越高越好。
仿真位错误率(SbER)
SbER的定义及测量技术描述于可购自DVD Format Logo LicensingCo.,Ltd.的书中,例如Annex H of Version 0.9,PART 1 PhysicalSpecifications,DVD Specifications for High Density Read-OnlyDisk。SbER越低越好。
PRSNR及SbER在信息已记录于相邻磁道中的状态下测量。
反射率(R)
光反射率(R)的定义及测量技术描述于可购自DVD Format LogoLicensing Co.,Ltd.的书中,例如Annex D of Version 0.9,PART 1Physical Specifications,DVD Specifications for High DensityRead-Only Disk。R越高越好。
循环数目
测量各种参数,例如PRSNR及SbER的由于重复读出的降级程度。直至达到最低规格或相当效能之前的循环数目越高越好。
“Ex.”意指实施例,“Comp.Ex.”意指比较实施例。
“nd”意指未测定。
实施例1
重氮化反应及偶氮偶合反应
将32.2g浓HCl水溶液逐滴添加至由在100ml水中的12.4g 2-甲氧基苯胺组成的溶液中。使用冰浴将温度降低至0℃且逐滴添加20.8ml亚硝酸钠水溶液(33.3重量%),同时将温度维持在低于5℃。将所得溶液在0℃下搅拌1小时且在10℃下将其逐滴添加至由17.6g 1,3,3-三甲基-2-甲基-二氢吲哚、31.8g Na2CO3、100ml甲醇及30ml水组成的混合物中。
在完全添加之后,将所得混合物在10℃下搅拌1小时。接着添加浓HCl水溶液直至pH=7。过滤所得沉淀物,用1000ml水洗涤且风干以得到28.3g黄色中间体,也即式(Vd_1)化合物。
烷基化方法A
将28.3g所得式(Vd_1)化合物吸收于200ml甲基乙基酮中,添加47g甲基碘且在大气压下使所得混合物回流48小时。将温度冷却至室温且过滤所形成的沉淀物,每次用15ml甲基乙基酮洗涤3次且在60℃下真空下干燥24小时。获得22.4g橙色固体形式的式(1_I)化合物。
实施例2至8:重氮化及偶合反应
使用相应的苯胺化合物来进行根据实施例1的重氮化及偶合反应以经由式(Vd_2)、(Vd_3)、(Vd_4)、(Vd_5)及(Vd_7)的中间体化合物得到式(2_I)、(3_I)、(4_I)、(1_Cl)、(3_Cl)、(5_Cl)及(7_I)的化合物。
实施例2至4及8:烷基化方法A
使用相应的中间体来进行根据实施例1的烷基化反应。在所需最终化合物不沉淀的情况下,将反应混合物蒸干且该化合物不经进一步纯化而使用,这例如为实施例4的情形。
实施例5:烷基化方法B
将自实施例5的重氮化及偶合反应获得的固体吸收于120ml氯苯中且将混合物加热至80℃。逐滴添加3.18g N-乙基二异丙基胺,随后添加14.9g硫酸二甲酯。将所得混合物于85℃下搅拌10小时。蒸汽蒸馏氯苯。向所得混合物中添加45g NaCl且将所得混合物蒸干。在60℃下在真空下干燥所得固体24小时。获得71g含有式(1_Cl)化合物的物质。
实施例6及7:烷基化方法B
使用相应的中间体来进行根据实施例5的烷基化反应,产生式(3_Cl)及(5_Cl)的化合物。
组合及细节在表(A2)及(A3)中给出。
Figure G200880008344XD00261
Figure G200880008344XD00262
表(A4)显示式(1_I)至(5_Cl)的化合物的物理-化学性能。
Figure G200880008344XD00263
实施例9
将23.6g 2-氨基-4-硝基-6-乙酰氨基苯酚添加至190ml水中,随后逐滴添加36g浓HCl水溶液。将温度冷却至0℃且逐滴添加25.5ml亚硝酸钠水溶液(33.3重量%),同时将温度保持在低于5℃。在此温度下搅拌黄色混合物1小时。接着将混合物转移至于210ml水中含有23.1g式(IVa_丁基)化合物、45.9g乙酸钠的混合物上。
Figure G200880008344XD00271
在完全添加之后,将所得混合物在室温下搅拌1小时。过滤所得棕黄色沉淀物,用800ml水洗涤且在60℃下在真空下干燥24小时。获得37.5g黄色固体形式的式(IV_11)化合物。
实施例10
将22.9g根据实施例9制备的式(IV_11)化合物、15.0g CoSO4*7H2O及1000ml乙腈在大气压下回流20分钟。逐滴添加16.3g三乙胺且将所得混合物在大气压下回流1小时30分钟。在冷却至室温之后,过滤溶液且通过蒸馏移除大部分溶剂。向所得紫色浆料中逐滴添加160ml乙醇且将混合物在大气压下回流1小时。在冷却至室温之后,过滤绿棕色沉淀物,用60ml乙醇洗涤且接着用180ml水洗涤且在60℃下在真空下干燥24小时。获得24.2g棕黑色固体形式的式(11_6)化合物。表(A5)显示式(IV_11)及(11_6)的化合物的物理-化学性能。
实施例11
将71.0g根据实施例5制备的含有式(1_Cl)化合物的固体在700ml乙醇中搅拌1小时。过滤所得混合物。接着将滤液逐滴添加至在大气压下回流的由64.4g式(10_6)化合物及640ml乙醇组成的混合物中。在完全添加之后,将混合物在大气压下回流4h。在冷却至室温之后,过滤沉淀物,用750ml乙醇且接着用5000ml水洗涤且在65℃下在真空下干燥24小时。获得72.0g橙棕色固体形式的式(10_1)化合物。
实施例12至17
使用包含式(1)至(5)的化合物的相应的前体,包含式(10)及(11)的化合物的相应的前体来进行根据实施例11的制备。
组合及细节在表(A6)中给出。
Figure G200880008344XD00281
表(A7)显示式(10_1)、(10_2)、(10_3)、(10_4)、(10_5)、(11_1)及(11_2)的化合物的物理-化学性能。
应用实施例1
研究式(I)化合物的光学及热性能。式(I)化合物在所需波长下显示高吸收。另外,仍对光盘反射率及清晰标记边缘的形成具有关键性的吸收光谱形状由一个包含于330至500nm范围内的主谱带组成。
更确切而言,折射率的n值经评价介于1.0与2.7之间。发现光稳定性与商业染料相当,这些商业染料已经采用猝灭剂稳定化用于光学数据记录。
在所需温度范围内的热分解的清晰阈值是希望应用于光学数据记录的光学层中的式(I)化合物的特征。
应用实施例2-光学层及光学数据记录介质
将基于溶剂重量计1.4重量%的根据实施例11制备的式(10_1)化合物溶解于2,2,3,3-四氟丙-1-醇中且将溶液经由孔尺寸为0.2微米的聚四氟乙烯(Teflon)过滤器过滤,且通过以1000r pm旋涂施加至120mm直径的0.6mm厚的有槽聚碳酸酯光盘的表面。过量溶液是通过增加旋转速度而旋脱。在溶剂蒸发时,染料以均一、无定形固体层(光学层)的形式保留下来。
在真空涂布设备中将光学层于70℃下(10min)的循环空气烘箱中干燥之后,接着将100μm厚的银层通过雾化施加至记录层上。接着将6μm厚的UV可固化感光聚合物(650-020,DSM)的保护层通过旋涂方式施加至其上。最后,提供第二基材,以使用连接层与树脂保护层结合。这完成高密度可记录光盘(光学数据记录介质)的制造。
评价测试使用可自Pulse Tech Co.,Ltd.购得的光盘评价设备来进行。
测试条件如下:
·光学头的数值孔径(NA):0.65
·用于记录及再现的激光波长:405nm
·恒定线速度(CLV):6.61m/sec.
·磁道间距:400nm
·凹槽磁道的摆动幅度:14nm
·凹槽深度:90nm。
比较实施例1
使用根据WO 2006/106110A制备的式(d6CoBY28)化合物进行应用实施例2。
Figure G200880008344XD00301
采用多种化合物根据应用实施例2的测试的结果概括于表(D)中。
Figure G200880008344XD00302
对于所述记录层制造的一次写入式光盘中的每种进行测试以评价因重复再现而降级的程度。在O.4mW的读出激光器功率下进行读出且接着测量PRSNR及SbER的降级程度。发现最大循环数目在规格之内。

Claims (29)

1.式(I)化合物在用于光学数据记录的光学层中的用途,
An-*Cat+(I)
Cat+为式(II)化合物;
Figure A2008800083440002C1
An-为式(III)化合物;
Figure A2008800083440002C2
M代表三价金属原子,优选选自化学元素周期表第3、4、5、6、7、8、9、10、11及12族;
R9为C1-4烷基或NH-苯基;
R1a选自H、O-C1-4烷基、CO-苯基、O-苯基及S-苯基;
R2a选自H、正丙基、异丙基、O-C1-4烷基、CO-苯基、O-苯基及S-苯基;
前提条件是,如果R2a为甲氧基或H,则R1a不为H;
R10、R11、R12及R13相同或不同,且彼此独立地选自由以下基团组成的组:H、CN、CF3、卤素、NO2、OH、SH、SO2-NR21R22、CO-R20、SO2R20、CO-NR21R22
C1-10烷基、C3-10环烷基,该C1-10烷基及该C3-10环烷基彼此独立地未经取代或经1至4个相同或不同的取代基取代,这些取代基彼此独立地选自C1-10烷基、卤素、OH、CN、CF3、C6-12芳基及NR21R22
C6-C12芳基、O-C6-12芳基、S-C6-12芳基,该C6-12芳基及该O-C6-12芳基及该S-C6-12芳基未经取代或经1至4个相同或不同的取代基取代,这些取代基彼此独立地选自C1-10烷基、C3-10环烷基、OH、NO2、CN、卤素、CF3、C6-12芳基、O-C1-10烷基、S-C1-10烷基及NR21R22,O-C1-10烷基、S-C1-10烷基、O-C3-10环烷基、S-C3-10环烷基、NHCOR20及NR21R22
所述R21及R22残基相同或不同,且彼此独立地选自H、C1-10烷基、C6-12芳基及C1-12烷基-NR23R24
所述R23及R24残基相同或不同,且彼此独立地选自H、C1-10烷基及C6-12芳基;
所述R20残基相同或不同,且彼此独立地选自OH、C1-6烷基、C6-10芳基及O-C1-6烷基。
2.根据权利要求1的式(I)化合物的用途,其中
M 选自Co、Cr、Fe及Al;
R9为C1-4烷基;
R1a选自H、甲氧基、CO-苯基、O-苯基及S-苯基;
R2a选自H、异丙基、甲氧基、CO-苯基、O-苯基及S-苯基;
前提条件是,如果R2a为甲氧基或H,则R1a不为H;
R12为NO2
R11为H或NO2
R10为H或NHCOCH3
R13为H。
3.根据权利要求1或2的式(I)化合物的用途,其中
M选自Co、Fe及Al;
R9为正丁基;
R1a选自H、甲氧基、CO-苯基、O-苯基及S-苯基;
R2a选自H、异丙基及甲氧基;
前提条件是,如果R2a为甲氧基或H,则R1a不为H;
R12为NO2
R10为H或NHCOCH3
R11及R13为H。
4.根据权利要求1-3中一项或多项的式(I)化合物的用途,其中Cat+选自式(1)、(2)、(3)、(4)、(5)及(7)的化合物;
Figure A2008800083440004C1
以及An-为式(10)化合物或(11)化合物
Figure A2008800083440005C1
5.根据权利要求1-4中一项或多项的式(I)化合物的用途,其中该式(I)化合物选自式(10_1)、(10_2)、(10_3)、(10_4)、(10_5)、(11_1)及(11_2)的化合物,这些化学式如表(A)中限定,
其中该表(A)中的该An-及该Cat+如权利要求4中所限定。
6.式(I)化合物,其如权利要求1中所限定。
7.根据权利要求6的式(I)化合物,其中
M、R9、R1a、R2a、R10、R11、R12及R13如权利要求2中所限定。
8.根据权利要求6或7的式(I)化合物,其中
M、R9、R1a、R2a、R10、R11、R12及R13如权利要求3中所限定。
9.根据权利要求6-8中一项或多项的式(I)化合物,其中
Cat+如权利要求4中所限定;且
An-如权利要求4中所限定。
10.根据权利要求6或9中一项或多项的式(I)化合物,其中该化合物选自如权利要求5中所限定的化合物。
11.制备如权利要求6至10中一项或多项中所限定的式(I)化合物的方法,其是通过相应的式(III_6)化合物与相应的式(II_盐)化合物之间的复分解反应而进行,
式(III)化合物 *式(6)化合物    (III_6)
Figure A2008800083440006C2
该式(III)化合物如权利要求1中所限定,
式(II)化合物 *阴离子(II) (II_盐)
该式(II)化合物如权利要求1中所限定,且该阴离子(II)选自卤离子、硫酸根及甲基硫酸根。
12.式(11_6)化合物,
式(11)化合物 *式(6)化合物 (11_6)
该式(6)化合物如权利要求11中所限定且该式(11)化合物如权利要求4中所限定。
13.根据权利要求12的式(11_6)化合物用于制备如权利要求6至10中一项或多项中所限定的式(I)化合物的用途。
14.制备根据权利要求12的式(11_6)化合物的方法,其是通过式(IV_11)化合物与二价钴盐在三乙胺存在下的配合反应而进行,
15.式(IV_11)化合物,其如权利要求14中所限定。
16.如权利要求14中所限定的式(IV_11)化合物用于制备如权利要求12中所限定的式(11_6)化合物的用途。
17.制备如权利要求14中所限定的(IV_11)化合物的方法,其是由式(IVa_11)与式(IVb_11)化合物的偶氮偶合反应而进行,
Figure A2008800083440007C2
18.式(II_盐)化合物,其如权利要求11中所限定。
19.根据权利要求18的式(II_盐)化合物,其中该式(II)化合物选自如权利要求4中所限定的式(1)、(2)、(3)、(4)、(5)及(7)的化合物,且该阴离子(II)如权利要求11中所限定。
20.根据权利要求18或19的式(II_盐)化合物,其中该化合物选自如表(A1)中所限定的式(1_I)、(2_I)、(3_I)、(4_I)、(1_C1)、(3_C1)、(5_C1)及(7_I)化合物,
Figure A2008800083440008C1
该表(A1)中的该式(II)化合物如权利要求4中所限定。
21.根据权利要求18至20中一项或多项的式(II_盐)化合物用于制备根据权利要求6至10中一项或多项的式(I)化合物的用途。
22.制备根据权利要求18至20中一项或多项的式(II_盐)化合物的方法,其是通过式(Vd)化合物与甲基碘或与硫酸二甲酯的烷基化反应而进行,
Figure A2008800083440008C2
该R1a及R2a如权利要求6至10中一项或多项中所限定。
23.如权利要求22中所限定的式(Vd)化合物。
24.根据权利要求23的式(Vd)化合物,其中该化合物选自式(Vd_1)、(Vd_2)、(Vd_3)、(Vd_4)、(Vd_5)或(Vd_7)化合物,
Figure A2008800083440009C1
25.根据权利要求23或24的式(Vd)化合物用于制备如权利要求18至20中一项或多项的式(II_盐)化合物的用途。
26.制备如权利要求23或24的式(Vd)化合物的方法,其是通过相应的式(Va)化合物与相应的式(Vb)化合物的偶氮偶合反应而进行,
Figure A2008800083440010C1
该R1a及R2a如权利要求6至10中一项或多项中所限定。
27.光学层,其包含如权利要求6至10中一项或多项中所限定的式(I)化合物。
28.制造根据权利要求27的光学层的方法,其包括以下步骤:
(a)提供基材,
(b)将至少一种如权利要求6至10中一项或多项中所限定的式(I)化合物溶解于有机溶剂中,以形成溶液,
(c)将该溶液(b)涂布于该基材(a)上,
(d)蒸发该溶剂,以形成光学层。
29.光学数据记录介质,其包含根据权利要求27的光学层。
CN200880008344A 2007-05-09 2008-05-07 二氢吲哚二氮杂次甲基阳离子用于光学数据记录的用途 Pending CN101681650A (zh)

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CN102732062B (zh) * 2011-03-31 2015-09-02 住友化学株式会社 染料用盐

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