CN101663737B - 用于晶片无电镀的方法和设备 - Google Patents

用于晶片无电镀的方法和设备 Download PDF

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Publication number
CN101663737B
CN101663737B CN2008800124223A CN200880012422A CN101663737B CN 101663737 B CN101663737 B CN 101663737B CN 2008800124223 A CN2008800124223 A CN 2008800124223A CN 200880012422 A CN200880012422 A CN 200880012422A CN 101663737 B CN101663737 B CN 101663737B
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wafer
platen
electroless plating
chamber
fluid
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English (en)
Chinese (zh)
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CN101663737A (zh
Inventor
威廉·蒂
约翰·M·博迪
弗里茨·C·雷德克
耶兹迪·多尔迪
约翰·帕克斯
蒂鲁吉拉伯利·阿鲁娜
亚历山大·奥夫恰茨
托德·巴力斯基
克林特·托马斯
雅各布·卫理
艾伦·M·舍普
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Lam Research Corp
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Lam Research Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54Contact plating, i.e. electroless electrochemical plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN2008800124223A 2007-04-16 2008-04-14 用于晶片无电镀的方法和设备 Active CN101663737B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/735,987 US8485120B2 (en) 2007-04-16 2007-04-16 Method and apparatus for wafer electroless plating
US11/735,987 2007-04-16
PCT/US2008/004769 WO2008130519A1 (en) 2007-04-16 2008-04-11 Method and apparatus for wafer electroless plating

Publications (2)

Publication Number Publication Date
CN101663737A CN101663737A (zh) 2010-03-03
CN101663737B true CN101663737B (zh) 2013-01-23

Family

ID=39853971

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800124223A Active CN101663737B (zh) 2007-04-16 2008-04-14 用于晶片无电镀的方法和设备

Country Status (6)

Country Link
US (2) US8485120B2 (enExample)
JP (1) JP5579054B2 (enExample)
KR (1) KR101519674B1 (enExample)
CN (1) CN101663737B (enExample)
TW (1) TWI435770B (enExample)
WO (1) WO2008130519A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7539652B2 (en) * 2003-11-28 2009-05-26 Manyworlds, Inc. Adaptive self-modifying and recombinant systems
EP3392351A1 (en) 2008-04-21 2018-10-24 Gen-Probe Incorporated Method for detecting chikungunya virus
US20140266219A1 (en) * 2013-03-14 2014-09-18 Applied Materials, Inc. Detecting electrolyte meniscus in electroplating processors
US20160149733A1 (en) * 2014-11-26 2016-05-26 Applied Materials, Inc. Control architecture for devices in an rf environment
US9872341B2 (en) 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
IT201800009071A1 (it) * 2018-10-01 2020-04-01 Rise Tech Srl Realizzazione di strutture multi-componente tramite menischi dinamici
CN116213191B (zh) * 2022-09-08 2025-08-12 江西安芯美科技有限公司 一种半导体晶圆点胶装置及其点胶方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1061157A1 (en) * 1998-03-02 2000-12-20 Ebara Corporation Substrate plating device

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2941902A (en) 1957-07-02 1960-06-21 Gen Am Transport Chemical nickel plating methods and systems
US3931790A (en) * 1971-07-06 1976-01-13 Ppg Industries, Inc. Angled crossfire rinses
US4239732A (en) 1979-04-13 1980-12-16 The Martin Sweets Company, Inc. High velocity mixing system
JPS5938304B2 (ja) 1980-08-27 1984-09-14 富士電機株式会社 無電解メツキ装置
DE3233602C1 (de) 1982-09-10 1984-01-19 Hoechst Ag, 6230 Frankfurt Verfahren zur Reinigung von Corticosteroidphosphorsaeureester-Alkalisalzen und ihre Verwendung
BE1000670A5 (fr) 1987-06-25 1989-03-07 Baxter Travenol Lab Dispositif de remplissage de poches a l'aide d'un liquide de perfusion.
JP3560652B2 (ja) 1994-09-06 2004-09-02 コニカミノルタホールディングス株式会社 混合方法
US6060176A (en) 1995-11-30 2000-05-09 International Business Machines Corporation Corrosion protection for metallic features
US5857589A (en) 1996-11-20 1999-01-12 Fluid Research Corporation Method and apparatus for accurately dispensing liquids and solids
US6696449B2 (en) 1997-03-04 2004-02-24 Pharmacia Corporation Sulfonyl aryl hydroxamates and their use as matrix metalloprotease inhibitors
TW402737B (en) 1997-05-27 2000-08-21 Tokyo Electron Ltd Cleaning/drying device and method
US6171367B1 (en) 1997-06-05 2001-01-09 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for delivering and recycling a bubble-free liquid chemical
JPH1192949A (ja) 1997-09-16 1999-04-06 Ebara Corp 半導体ウエハーの配線メッキ装置
KR100265286B1 (ko) 1998-04-20 2000-10-02 윤종용 반도체장치 제조용 케미컬 순환공급장치 및 이의 구동방법
US6192827B1 (en) 1998-07-03 2001-02-27 Applied Materials, Inc. Double slit-valve doors for plasma processing
JP2000064087A (ja) 1998-08-17 2000-02-29 Dainippon Screen Mfg Co Ltd 基板メッキ方法及び基板メッキ装置
JP3639151B2 (ja) * 1999-03-11 2005-04-20 株式会社荏原製作所 めっき装置
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
JP2001073157A (ja) 1999-09-08 2001-03-21 Sony Corp 無電解めっき方法及びその装置
JP3367655B2 (ja) 1999-12-24 2003-01-14 島田理化工業株式会社 めっき処理装置及びめっき処理方法
WO2001048800A1 (en) 1999-12-24 2001-07-05 Ebara Corporation Semiconductor wafer processing apparatus and processing method
JP3866012B2 (ja) * 2000-06-02 2007-01-10 株式会社荏原製作所 無電解めっき方法及び装置
US6612915B1 (en) 1999-12-27 2003-09-02 Nutool Inc. Work piece carrier head for plating and polishing
JP2001192845A (ja) * 2000-01-13 2001-07-17 Tokyo Electron Ltd 無電解メッキ装置及び無電解メッキ方法
US6335104B1 (en) 2000-02-22 2002-01-01 International Business Machines Corporation Method for preparing a conductive pad for electrical connection and conductive pad formed
JP2001316834A (ja) 2000-04-28 2001-11-16 Sony Corp 無電解メッキ装置および導電膜の形成方法
US7905653B2 (en) 2001-07-31 2011-03-15 Mega Fluid Systems, Inc. Method and apparatus for blending process materials
JP3883802B2 (ja) * 2000-10-26 2007-02-21 株式会社荏原製作所 無電解めっき装置
US6953392B2 (en) 2001-01-05 2005-10-11 Asm Nutool, Inc. Integrated system for processing semiconductor wafers
JP3707394B2 (ja) * 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
JP2002332597A (ja) 2001-05-11 2002-11-22 Tokyo Electron Ltd 液処理装置及び液処理方法
JP2002367998A (ja) * 2001-06-11 2002-12-20 Ebara Corp 半導体装置及びその製造方法
US6889627B1 (en) 2001-08-08 2005-05-10 Lam Research Corporation Symmetrical semiconductor reactor
US6645567B2 (en) 2001-12-19 2003-11-11 Intel Corporation Electroless plating bath composition and method of using
US6824612B2 (en) * 2001-12-26 2004-11-30 Applied Materials, Inc. Electroless plating system
JP3886383B2 (ja) * 2002-01-11 2007-02-28 株式会社荏原製作所 めっき装置及びめっき方法
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US6814813B2 (en) 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US7223323B2 (en) 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
JP3985864B2 (ja) 2002-08-27 2007-10-03 株式会社荏原製作所 無電解めっき装置及び方法
US7341634B2 (en) 2002-08-27 2008-03-11 Ebara Corporation Apparatus for and method of processing substrate
JP3495033B1 (ja) 2002-09-19 2004-02-09 東京エレクトロン株式会社 無電解メッキ装置、および無電解メッキ方法
US7520285B2 (en) 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
TWI251511B (en) 2002-09-30 2006-03-21 Lam Res Corp Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7252097B2 (en) 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
US6699380B1 (en) 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
US7189146B2 (en) 2003-03-27 2007-03-13 Asm Nutool, Inc. Method for reduction of defects in wet processed layers
TWI247056B (en) 2003-04-23 2006-01-11 Air Liquide Method and apparatus for monitoring, dosing and distribution of chemical solutions
US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
JP2005068494A (ja) 2003-08-25 2005-03-17 Advanced Lcd Technologies Development Center Co Ltd 薄膜処理装置、薄膜処理方法、薄膜トランジスタおよび表示装置
US20050051437A1 (en) 2003-09-04 2005-03-10 Keiichi Kurashina Plating apparatus and plating method
US7335277B2 (en) 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7323058B2 (en) * 2004-01-26 2008-01-29 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US7597763B2 (en) 2004-01-22 2009-10-06 Intel Corporation Electroless plating systems and methods
US20050181226A1 (en) 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
JP2006111938A (ja) 2004-10-15 2006-04-27 Tokyo Electron Ltd 無電解めっき装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1061157A1 (en) * 1998-03-02 2000-12-20 Ebara Corporation Substrate plating device

Also Published As

Publication number Publication date
KR20100020944A (ko) 2010-02-23
WO2008130519A1 (en) 2008-10-30
US20080254225A1 (en) 2008-10-16
TWI435770B (zh) 2014-05-01
CN101663737A (zh) 2010-03-03
US9287110B2 (en) 2016-03-15
JP2010525166A (ja) 2010-07-22
KR101519674B1 (ko) 2015-05-21
JP5579054B2 (ja) 2014-08-27
TW200906499A (en) 2009-02-16
US20130280917A1 (en) 2013-10-24
US8485120B2 (en) 2013-07-16

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