CN101663737B - 用于晶片无电镀的方法和设备 - Google Patents
用于晶片无电镀的方法和设备 Download PDFInfo
- Publication number
- CN101663737B CN101663737B CN2008800124223A CN200880012422A CN101663737B CN 101663737 B CN101663737 B CN 101663737B CN 2008800124223 A CN2008800124223 A CN 2008800124223A CN 200880012422 A CN200880012422 A CN 200880012422A CN 101663737 B CN101663737 B CN 101663737B
- Authority
- CN
- China
- Prior art keywords
- wafer
- platen
- electroless plating
- chamber
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/735,987 US8485120B2 (en) | 2007-04-16 | 2007-04-16 | Method and apparatus for wafer electroless plating |
| US11/735,987 | 2007-04-16 | ||
| PCT/US2008/004769 WO2008130519A1 (en) | 2007-04-16 | 2008-04-11 | Method and apparatus for wafer electroless plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101663737A CN101663737A (zh) | 2010-03-03 |
| CN101663737B true CN101663737B (zh) | 2013-01-23 |
Family
ID=39853971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800124223A Active CN101663737B (zh) | 2007-04-16 | 2008-04-14 | 用于晶片无电镀的方法和设备 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8485120B2 (enExample) |
| JP (1) | JP5579054B2 (enExample) |
| KR (1) | KR101519674B1 (enExample) |
| CN (1) | CN101663737B (enExample) |
| TW (1) | TWI435770B (enExample) |
| WO (1) | WO2008130519A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7539652B2 (en) * | 2003-11-28 | 2009-05-26 | Manyworlds, Inc. | Adaptive self-modifying and recombinant systems |
| EP3392351A1 (en) | 2008-04-21 | 2018-10-24 | Gen-Probe Incorporated | Method for detecting chikungunya virus |
| US20140266219A1 (en) * | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Detecting electrolyte meniscus in electroplating processors |
| US20160149733A1 (en) * | 2014-11-26 | 2016-05-26 | Applied Materials, Inc. | Control architecture for devices in an rf environment |
| US9872341B2 (en) | 2014-11-26 | 2018-01-16 | Applied Materials, Inc. | Consolidated filter arrangement for devices in an RF environment |
| IT201800009071A1 (it) * | 2018-10-01 | 2020-04-01 | Rise Tech Srl | Realizzazione di strutture multi-componente tramite menischi dinamici |
| CN116213191B (zh) * | 2022-09-08 | 2025-08-12 | 江西安芯美科技有限公司 | 一种半导体晶圆点胶装置及其点胶方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1061157A1 (en) * | 1998-03-02 | 2000-12-20 | Ebara Corporation | Substrate plating device |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2941902A (en) | 1957-07-02 | 1960-06-21 | Gen Am Transport | Chemical nickel plating methods and systems |
| US3931790A (en) * | 1971-07-06 | 1976-01-13 | Ppg Industries, Inc. | Angled crossfire rinses |
| US4239732A (en) | 1979-04-13 | 1980-12-16 | The Martin Sweets Company, Inc. | High velocity mixing system |
| JPS5938304B2 (ja) | 1980-08-27 | 1984-09-14 | 富士電機株式会社 | 無電解メツキ装置 |
| DE3233602C1 (de) | 1982-09-10 | 1984-01-19 | Hoechst Ag, 6230 Frankfurt | Verfahren zur Reinigung von Corticosteroidphosphorsaeureester-Alkalisalzen und ihre Verwendung |
| BE1000670A5 (fr) | 1987-06-25 | 1989-03-07 | Baxter Travenol Lab | Dispositif de remplissage de poches a l'aide d'un liquide de perfusion. |
| JP3560652B2 (ja) | 1994-09-06 | 2004-09-02 | コニカミノルタホールディングス株式会社 | 混合方法 |
| US6060176A (en) | 1995-11-30 | 2000-05-09 | International Business Machines Corporation | Corrosion protection for metallic features |
| US5857589A (en) | 1996-11-20 | 1999-01-12 | Fluid Research Corporation | Method and apparatus for accurately dispensing liquids and solids |
| US6696449B2 (en) | 1997-03-04 | 2004-02-24 | Pharmacia Corporation | Sulfonyl aryl hydroxamates and their use as matrix metalloprotease inhibitors |
| TW402737B (en) | 1997-05-27 | 2000-08-21 | Tokyo Electron Ltd | Cleaning/drying device and method |
| US6171367B1 (en) | 1997-06-05 | 2001-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for delivering and recycling a bubble-free liquid chemical |
| JPH1192949A (ja) | 1997-09-16 | 1999-04-06 | Ebara Corp | 半導体ウエハーの配線メッキ装置 |
| KR100265286B1 (ko) | 1998-04-20 | 2000-10-02 | 윤종용 | 반도체장치 제조용 케미컬 순환공급장치 및 이의 구동방법 |
| US6192827B1 (en) | 1998-07-03 | 2001-02-27 | Applied Materials, Inc. | Double slit-valve doors for plasma processing |
| JP2000064087A (ja) | 1998-08-17 | 2000-02-29 | Dainippon Screen Mfg Co Ltd | 基板メッキ方法及び基板メッキ装置 |
| JP3639151B2 (ja) * | 1999-03-11 | 2005-04-20 | 株式会社荏原製作所 | めっき装置 |
| US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
| JP2001073157A (ja) | 1999-09-08 | 2001-03-21 | Sony Corp | 無電解めっき方法及びその装置 |
| JP3367655B2 (ja) | 1999-12-24 | 2003-01-14 | 島田理化工業株式会社 | めっき処理装置及びめっき処理方法 |
| WO2001048800A1 (en) | 1999-12-24 | 2001-07-05 | Ebara Corporation | Semiconductor wafer processing apparatus and processing method |
| JP3866012B2 (ja) * | 2000-06-02 | 2007-01-10 | 株式会社荏原製作所 | 無電解めっき方法及び装置 |
| US6612915B1 (en) | 1999-12-27 | 2003-09-02 | Nutool Inc. | Work piece carrier head for plating and polishing |
| JP2001192845A (ja) * | 2000-01-13 | 2001-07-17 | Tokyo Electron Ltd | 無電解メッキ装置及び無電解メッキ方法 |
| US6335104B1 (en) | 2000-02-22 | 2002-01-01 | International Business Machines Corporation | Method for preparing a conductive pad for electrical connection and conductive pad formed |
| JP2001316834A (ja) | 2000-04-28 | 2001-11-16 | Sony Corp | 無電解メッキ装置および導電膜の形成方法 |
| US7905653B2 (en) | 2001-07-31 | 2011-03-15 | Mega Fluid Systems, Inc. | Method and apparatus for blending process materials |
| JP3883802B2 (ja) * | 2000-10-26 | 2007-02-21 | 株式会社荏原製作所 | 無電解めっき装置 |
| US6953392B2 (en) | 2001-01-05 | 2005-10-11 | Asm Nutool, Inc. | Integrated system for processing semiconductor wafers |
| JP3707394B2 (ja) * | 2001-04-06 | 2005-10-19 | ソニー株式会社 | 無電解メッキ方法 |
| JP2002332597A (ja) | 2001-05-11 | 2002-11-22 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
| JP2002367998A (ja) * | 2001-06-11 | 2002-12-20 | Ebara Corp | 半導体装置及びその製造方法 |
| US6889627B1 (en) | 2001-08-08 | 2005-05-10 | Lam Research Corporation | Symmetrical semiconductor reactor |
| US6645567B2 (en) | 2001-12-19 | 2003-11-11 | Intel Corporation | Electroless plating bath composition and method of using |
| US6824612B2 (en) * | 2001-12-26 | 2004-11-30 | Applied Materials, Inc. | Electroless plating system |
| JP3886383B2 (ja) * | 2002-01-11 | 2007-02-28 | 株式会社荏原製作所 | めっき装置及びめっき方法 |
| US6913651B2 (en) | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
| US6814813B2 (en) | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
| US7223323B2 (en) | 2002-07-24 | 2007-05-29 | Applied Materials, Inc. | Multi-chemistry plating system |
| JP3985864B2 (ja) | 2002-08-27 | 2007-10-03 | 株式会社荏原製作所 | 無電解めっき装置及び方法 |
| US7341634B2 (en) | 2002-08-27 | 2008-03-11 | Ebara Corporation | Apparatus for and method of processing substrate |
| JP3495033B1 (ja) | 2002-09-19 | 2004-02-09 | 東京エレクトロン株式会社 | 無電解メッキ装置、および無電解メッキ方法 |
| US7520285B2 (en) | 2002-09-30 | 2009-04-21 | Lam Research Corporation | Apparatus and method for processing a substrate |
| TWI251511B (en) | 2002-09-30 | 2006-03-21 | Lam Res Corp | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
| US7252097B2 (en) | 2002-09-30 | 2007-08-07 | Lam Research Corporation | System and method for integrating in-situ metrology within a wafer process |
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| JP2005068494A (ja) | 2003-08-25 | 2005-03-17 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜処理装置、薄膜処理方法、薄膜トランジスタおよび表示装置 |
| US20050051437A1 (en) | 2003-09-04 | 2005-03-10 | Keiichi Kurashina | Plating apparatus and plating method |
| US7335277B2 (en) | 2003-09-08 | 2008-02-26 | Hitachi High-Technologies Corporation | Vacuum processing apparatus |
| US7323058B2 (en) * | 2004-01-26 | 2008-01-29 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
| US7465358B2 (en) | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
| US7597763B2 (en) | 2004-01-22 | 2009-10-06 | Intel Corporation | Electroless plating systems and methods |
| US20050181226A1 (en) | 2004-01-26 | 2005-08-18 | Applied Materials, Inc. | Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber |
| JP2006111938A (ja) | 2004-10-15 | 2006-04-27 | Tokyo Electron Ltd | 無電解めっき装置 |
-
2007
- 2007-04-16 US US11/735,987 patent/US8485120B2/en not_active Expired - Fee Related
-
2008
- 2008-04-11 JP JP2010504056A patent/JP5579054B2/ja not_active Expired - Fee Related
- 2008-04-11 WO PCT/US2008/004769 patent/WO2008130519A1/en not_active Ceased
- 2008-04-11 KR KR1020097023794A patent/KR101519674B1/ko active Active
- 2008-04-14 CN CN2008800124223A patent/CN101663737B/zh active Active
- 2008-04-15 TW TW097113599A patent/TWI435770B/zh not_active IP Right Cessation
-
2013
- 2013-06-14 US US13/918,616 patent/US9287110B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1061157A1 (en) * | 1998-03-02 | 2000-12-20 | Ebara Corporation | Substrate plating device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100020944A (ko) | 2010-02-23 |
| WO2008130519A1 (en) | 2008-10-30 |
| US20080254225A1 (en) | 2008-10-16 |
| TWI435770B (zh) | 2014-05-01 |
| CN101663737A (zh) | 2010-03-03 |
| US9287110B2 (en) | 2016-03-15 |
| JP2010525166A (ja) | 2010-07-22 |
| KR101519674B1 (ko) | 2015-05-21 |
| JP5579054B2 (ja) | 2014-08-27 |
| TW200906499A (en) | 2009-02-16 |
| US20130280917A1 (en) | 2013-10-24 |
| US8485120B2 (en) | 2013-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |