KR101519674B1 - 웨이퍼 무전해 도금을 위한 방법 및 장치 - Google Patents

웨이퍼 무전해 도금을 위한 방법 및 장치 Download PDF

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KR101519674B1
KR101519674B1 KR1020097023794A KR20097023794A KR101519674B1 KR 101519674 B1 KR101519674 B1 KR 101519674B1 KR 1020097023794 A KR1020097023794 A KR 1020097023794A KR 20097023794 A KR20097023794 A KR 20097023794A KR 101519674 B1 KR101519674 B1 KR 101519674B1
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South Korea
Prior art keywords
platen
wafer
fluid
electroless plating
seal
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Korean (ko)
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KR20100020944A (ko
Inventor
윌리엄 티
존 엠 보이드
프리츠 씨 레데커
예즈디 도르디
존 파크스
티루히라팔리 아루나기리
알렉산더 오윅자르즈
토드 발리스키
클린트 토마스
자콥 와일리
앨런 엠 쇠프
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020097023794A 2007-04-16 2008-04-11 웨이퍼 무전해 도금을 위한 방법 및 장치 Active KR101519674B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/735,987 US8485120B2 (en) 2007-04-16 2007-04-16 Method and apparatus for wafer electroless plating
US11/735,987 2007-04-16
PCT/US2008/004769 WO2008130519A1 (en) 2007-04-16 2008-04-11 Method and apparatus for wafer electroless plating

Publications (2)

Publication Number Publication Date
KR20100020944A KR20100020944A (ko) 2010-02-23
KR101519674B1 true KR101519674B1 (ko) 2015-05-21

Family

ID=39853971

Family Applications (1)

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KR1020097023794A Active KR101519674B1 (ko) 2007-04-16 2008-04-11 웨이퍼 무전해 도금을 위한 방법 및 장치

Country Status (6)

Country Link
US (2) US8485120B2 (enExample)
JP (1) JP5579054B2 (enExample)
KR (1) KR101519674B1 (enExample)
CN (1) CN101663737B (enExample)
TW (1) TWI435770B (enExample)
WO (1) WO2008130519A1 (enExample)

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US20140266219A1 (en) * 2013-03-14 2014-09-18 Applied Materials, Inc. Detecting electrolyte meniscus in electroplating processors
US20160149733A1 (en) * 2014-11-26 2016-05-26 Applied Materials, Inc. Control architecture for devices in an rf environment
US9872341B2 (en) 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
IT201800009071A1 (it) * 2018-10-01 2020-04-01 Rise Tech Srl Realizzazione di strutture multi-componente tramite menischi dinamici
CN116213191B (zh) * 2022-09-08 2025-08-12 江西安芯美科技有限公司 一种半导体晶圆点胶装置及其点胶方法

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Also Published As

Publication number Publication date
TW200906499A (en) 2009-02-16
WO2008130519A1 (en) 2008-10-30
CN101663737B (zh) 2013-01-23
US9287110B2 (en) 2016-03-15
JP2010525166A (ja) 2010-07-22
US8485120B2 (en) 2013-07-16
JP5579054B2 (ja) 2014-08-27
US20130280917A1 (en) 2013-10-24
US20080254225A1 (en) 2008-10-16
KR20100020944A (ko) 2010-02-23
CN101663737A (zh) 2010-03-03
TWI435770B (zh) 2014-05-01

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