TWI251511B - Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer - Google Patents

Abstract

Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Description

1251511 IX. Description of invention: _ [Technical field to which the invention belongs] 曰. The invention relates to semiconductor wafer processing, and more particularly to apparatus and techniques for more efficient application and removal of fluids from wafer surfaces in reducing contamination and reducing wafer cleaning costs. - [Prior Art] In the manufacturing process of the _β-body wafer, it is well known that there is a need to process wafers using, for example, f木木; in each of these types of operations, there is an effective addition and removal. The need for fluids for wafer handling processes. f has been manufactured to leave a useless residue on the surface of the Crystal®, which can be cleaned/this is the side of the manufacturing operation (eg, on the support, and), == mechanical grinding (cmp). In cmp*, the wafer is placed on the surface of the iii package wafer against rolling belts or rotating platforms. This skin is easy to “grind the abrasive material to make the grinding process. But unfortunately, the circle: And the residue, if it remains in the facet of the face: and ϊ = it r may cause defects in it, such as defects in the wafer type may cause mutual on the wafer:: In some cases, after this manufacturing operation And it is necessary for the branch to be in the Weng (4) residue in the day of the Japanese yen, fine} complex xm ΑΖ * : π, water or residual cleaning liquid will be the residue ^ j must effectively dry the crystal ® to prevent the 'previous dissolution In the cleaning liquid, if the cleaning liquid on the surface of the crystal 81 can prevent the volatilization from occurring, the cleaning liquid will always be in the condition of the rotary drying, IPA, and the dry work--for example, the dry process is performed on the wafer surface. If the interface is properly maintained, it will not be able to form droplets. Unfortunately, if the moving liquid/gas interface collapses, such as the surface. The condition that often occurs will form droplets and will occur if there is no method. Explain that in the wafer 1〇 process during the SRD process, wet wafer borrowing Rotation direction 14 and high speed == drying centrifugal force will be used to rinse the wafer fluid from wafer ^ to f SR =, Li Yuan J, mobile liquid / gas interface 12 is established on wafer j,; ==== When moving, it moves to the outside of the wafer (that is, it is increased by the mobile liquid/dry 秌 private order). In the example of Fig. 1A, the circular domain generated by the moving liquid/gas < 1 2 / kg has no fluid. Exist, but by moving the liquid/air interface U Qing internal zone fluid, so when the drying process continues, the moving liquid area is increased (dry area), while the internal area of the moving ship / gas boundary ^ is reduced. As described above, if the moving liquid/gas extinguishing & 1 〇 〇 邛 area (tidal area) is on the wafer, and the droplets may be volatilized, contamination may occur; the droplets form droplet formation and subsequent evaporation to make the wafer It is necessary for the mouth to restrict the drying method before the prevention of movement. "The surface of the circle is not easy to dry, so the surface is difficult. The center of the hydrophobic crystal 2 circle (here, the effect on the droplets on the droplets = the material is the current crystal drying force = ^ it is serious' therefore, some parts of 6 1251511 may have different hydrophobic properties. Figure 1B An exemplary wafer drying procedure 18 is illustrated. In this example, a portion 20 of the wafer 1 is a hydrophilic region, and a portion 22 is a hydrophobic region. This portion 20 attracts water' so that the ml body 26 is concentrated in the region; While the portion 22 is hydrophobic, the region will expel water and thus form a thin film of water in the portion of the wafer 1 .. Therefore, the hydrophobic portion of the wafer 10 is generally faster than the hydrophilic portion, which will result in an increase. Inconsistent levels of contamination, wafer drying, and thus reduced wafer yield. Because we need to avoid the disadvantages of the prior art by reducing the optimal wafer fluidization and application of wafer surface contamination deposits. Devices, such deposits that occur frequently today, reduce acceptable wafer yields and increase the manufacturing cost of semiconductor devices. [SUMMARY] In general, the present invention provides high speed utilization by providing A substrate processing device that processes the surface of the wafer while substantially reducing wafer contamination to meet these needs. It should be noted that the present invention can be implemented in a shirt form, including a process, apparatus, system, apparatus or method. Several embodiments of the invention are described below. In the embodiment, a method of processing a substrate is disclosed, which comprises generating a fluid layer on a surface of the substrate, the body layer forming a "fluid meniscus", which includes a proximity connection, Moving closer to the surface of the substrate; applying a fluid from the proximal joint to the surface of the substrate as the proximal joint approaches the surface of the substrate; and removing the fluid from the surface of the substrate by means of a vacuum device and through the fluid. The fluid is closer to the surface of the substrate as the proximal joint The speed of the deceleration increases t, and travels along the fluid layer close to the substrate. The device close to the processing base, the Wei contains the movable = the surface of the substrate produces a fluid phase on the surface of the substrate to form a nearer meniscus. & main two # into the claw body layer, and the outlet is used to bring the fluid from the base can not be close to the table close (four) increase speed edge is located close a fluid layer between the substrate and the substrate to move the fluid. 7 1251511 « In another embodiment, a substrate preparation system is provided which includes a proximal joint - a first conduit that is movable in operation to approximate the surface of the substrate And the first person can be used to transport fluid to the surface of the substrate through the proximal joint. The system further includes a second conduit for removing the surface of the substrate from the substrate, wherein the fluid forms a fluid layer above the surface of the operating substrate, and the fluid increases in shape as the proximal joint approaches the surface of the substrate. , along the job, the foundation, the face of the Zhao layer. The invention has many advantages. The most interesting thing is that the equipment and systems described herein utilize a fluid meniscus with a high velocity fluid layer to effectively operate (eg, clean, dry, etc.) the substrate, which involves reducing the residue. The fluid should be optimal for unnecessary fluids and impurities on the wafer $ and from the substrate removal embodiment 'by using a high velocity fluid to create a fluid meniscus, which does not require the use of surface tension to reduce the gas 曰 μ * Bow liquid level / large milk boundary, so the effective wafer processing can improve the quality and production of the round processing and obtain higher wafer yield. Other solid silk samples and advantages will be explained by the following detailed description, matching drawings, and hunting examples by the principles of the present invention. [Embodiment] A method for processing a substrate is described. In the following, in order to provide a thorough understanding of the present invention; however, it should be clear to the person skilled in the art that the invention lacks some or all of the details of the well-known process operations. . There is a good example of this. However, we should make it clear that the alternatives, additions, changes and examples of the examples of the 孰 ; : : 现 现 现 现 现 现 现 现 现 现 现 现 现 现 现 现The round processing system = head _ 胄 Wei body layer to produce the technical special eight - or society. In the example, (4) produces a fluid bend 8 1251511 = the positive body can be treated by the fluid f liquid surface f effect), the enemy fluid meniscus J is more than the Jing liquid surface contact other crystal Round area: = ίί: = liquid level ' without the use of the table "== joint reverse joints on the shell" as an example of the appropriate configuration type can also be used. In the illustrated embodiment, With the == ί:ΞΙΐ part moving to the edge of the wafer, we should understand: the embodiment of the near-moving to the other-diameter relative edge can also go, moving, zigzag movement, _ movement mode, etc.; Ϊ = ; ί any suitable specified motion profile. Moreover, in a real way, the ί head is moved in a straight line, so that the near connector can handle the wafers. Other embodiments that are not rotated but the proximal joint is moved over the circle in a processable manner can also be used as a substrate for the near-joint and wafer processing, such as the surface. Wafers, _ca wafers, flat sheets, etc. The dimensions of the iir members of the shape and the ruler are followed by the bend, the liquid level (or according to the actual For example, the size r of many bends === crystals r== can be smaller than the processed wafer processing technology (such as brushing, lithography, Bai Erqing, etc.). The surface can be close to the joint: the above mentioned lying close ^ forest only on the noisy, and here 9 1251511

Figure 2 shows a wafer processing system 1 according to an embodiment of the invention. The system 100 includes rollers 102a and 102b that can support and/or rotate wafers for processing wafer surfaces. The system 100 also includes proximal joints 106a and 106b that, in one embodiment, are attached to the upper arms respectively. In the embodiment, the proximal wrist and the strap 6b can be used to apply a high velocity fluid layer to the wafer, as described below with reference to Figures 5a-9; the proximal joints 106a and 106b can be any Suitable equipment for the fluid meniscus, such as the proximal joint described herein, in another embodiment, the proximal joint 1 such as and/or 10b can be any of the proximal joints described herein. The upper arm 1 〇乜 and the lower arm 牝 can be part of the assembly. The assembly can substantially linearly move the proximal joint 106a and the rim along the radius of the wafer. In another embodiment, the assembly can be used as appropriate. The movement is defined to move the proximal joint 1 such as l〇6b. In one example, the arm arm 1〇4 is used to support the proximal joint 1 above the wafer, such as the proximal joint l〇6b under the wafer, to be adjacent to the wafer. For example, in an exemplary embodiment = ', this can be done by moving the upper arm arm 104a and the lower arm i〇4b in a vertical manner, so that once the proximal joint is horizontally moved to a starter crystal In the position of the circle processing, the heads 106a and 106b can be vertically moved to a position close to the wafer; in the other two embodiments, the upper arm 104a and the lower arm 1〇4b can be used for processing. The front joint application surface is activated at the position where the bend and the liquid surface are generated, and the liquid surface which has been generated between the near joint theory and the l〇6b can be moved to be processed from one edge region of the wafer (10). On the surface, therefore, the upper arm 1〇4a and the lower arm 1〇4b can be configured in any suitable manner to initiate wafer processing of the proximal joint 1G6a and the surface as described herein. We should understand that the system can be configured in any suitable way. ~ The proximal connector can be moved to the immediate vicinity of the wafer to generate and control the meniscus. We also understand that the proximity can be the same as the self-wafer. Any suitable distance can be calculated as long as it is sufficient to maintain the liquid level. In the embodiment, the near joint inspection and secret (and here other 近1 other proximal joints) can be set at about 5 from the wafer. Micron to about 500 1⁄4 meters to create a fluid meniscus on the wafer surface; in a preferred embodiment, close proximity, l〇6a and l〇6b (and any other proximal connectors described herein) can be set At a distance of about 70 microns from the b曰 circle, a fluid meniscus is generated on the surface of the wafer. In addition, according to the sequence between the fluid surface of the 1251511 fluid and the surface of the crystal, the flow rate of the fluid constituting the fluid meniscus can be changed. In an embodiment, the system 100 and the lever arm 104 are used to move the proximal joints 106a and 106b from the processed portion of the wafer to the unprocessed portion. We should understand that the lever arm 1〇4 近 is the proximal joint 1G6a and 1G6b. Move to handle the desired wafer in a suitable embodiment 104 can be driven by a motor to move the splicing along the surface of the wafer. It should be understood that although the crystals shown are applied to the legs with a proximal joint, any suitable number of proximal joints are (5) 2' 3, 4, 5, 6, etc.; The near-connector r-wafer of the wafer processing system 100 describes that the different configurations will produce a superior level between the near-junction and the wafer. The liquid level can be applied to the wafer surface and can be cleaned from the surface t = , side, and / or electric mine. Because or other squeaking sound 6b can have any of the types of configuration, processing shown here: ^ =; bottom surface: the person should be aware of the different types of bottom surface, The system 100 can also process wafers by inputting and (for example, eclipse, , , , or finely using different configurations of meniscus, and using one type of process, the same process, drying, electro-mine, etc.) Side, and use the liquid level to remove (Wu can be used to process the edge of the wafer bevel, this can be achieved by bending the edge: near the edge of the wafer that handles the beveled edge. We are also close to the master. 106b can be the same type of equipment or different types of equipment, as long as you A uzb any suitable The position can be old. In the ":", the near-connector is expected to process the crystal in 108. (- Shao in the reverse clock, the roller 1G2aA1G2b can rotate in the clock direction, α / rotate the wafer 108, it should be clear The roller can be moved as desired, as long as the wheel 102& and 102b rotates in any suitable position and rotates the wafer of I251511 to rotate it clockwise or counterclockwise by one or two 'rollers 102a and 102b. In the area where the wafer 108 is rotated, the wafer area is moved to the area immediately adjacent to the joint application. J itself does not have a dry wafer or moves the surface of the wafer to the wafer side: the second = therefore 'in- (4) The wafer processing operation towel, the wafer is not in the position, the head and the leg are linearly moved, and the wafer (10) is rotated near the joints 106a and 106b. The wafer processing operation itself can be at least 1 , = - in the embodiment, the processed portion of the wafer ( 10 ) will be in the second embodiment - when the near connector 1 () 6a and then from the wafer (10) around the center of the circle 108 At this time, the processed portion of the wafer 1 〇 8 will be extended to the central region of the wafer 1 以 8 with the edge region of the spiral motion side = 108.曰曰® In the demonstration operation, we should understand the near joints 1〇6a and 1〇 dry, clean, side, and/or plated wafers (10); in an exemplary wafer processing implementation ^ to ^, the inlet can be used A treatment fluid is applied to the wafer surface, and the 丨, - exit can be used to remove the area between the circle and the particular proximal joint by applying a vacuum treatment (also known as a vacuum outlet). In an alternative embodiment, an additional inlet may be used to apply a surface tension reducing fluid (e.g., isopropanol vapor in nitrogen) to the fluid on the wafer surface; in a drying operation embodiment, to $2 Into deionized water can be applied to the wafer surface. In an exemplary cleaning embodiment, the DIW may be replaced by a cleaning fluid; the DIW may be replaced by an etchant and an exemplary side embodiment may be implemented; in an additional embodiment, the treatment fluid and plating are used as described herein. The configuration of the joint is used to complete the plating. In addition, we can inject other types of solutions into the fluid meniscus on the wafer surface and remove it from the fluid meniscus, depending on the desired processing operation. It should be noted that the inlet and outlet of the side of the proximal joint may be any suitable configuration, and the fluid meniscus as described herein may be utilized. In one embodiment, the inlet is adjacent to the at least one vacuum outlet to form a treatment fluid-vacuum orientation, wherein the at least one outlet at least partially surrounds the at least one inlet. ^应12 1251511 知知: According to the desired wafer process and the empty processing fluid position, the available 夹 知 古 古 认 认 L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L Can;; rj additional processing flow two: /= 卜出=所;; = bit ίί2 ΐ _ configuration can be changed according to the application method, for example, the distance between i and f1 fluid inlet position can be changed, S Distance = S-ii size 1G6a size, shape and configuration and the size of the flow)) The heart outlet and the 屮nfr option ^, in the embodiment, at least one Ν 2 / ΙΡΑ vapor inlet can be at least - straight * exit phase Adjacent, the at least one vacuum outlet is sequentially formed to form a crucible: the vacuum-treatment fluid is located adjacent to the inlet of the H-forced treatment body, n in the embodiment, the proximal joint leg and the secret can be set in the division And the bottom i®108 contact wafer handles the meniscus, which can handle the same time on the top surface of the wafer J 曰niff fluid applied to the wafer surface at the same time, can be tight at Zhengliyuan 1; at: The treatment fluid and some environmental gases and / / body parts are meniscus. We should be daring: the sputum used here is removed from the area between the wafer 108 and the specific proximal joint. " ° Wide refers to the input of the fluid to the area where the close (10) is close to the female" - 1(10)13/ The proximity vines J 3 to 4B that perform wafer processing operations in accordance with an embodiment of the present invention show a method and apparatus for generating a fluid meniscus using an IPA application without the need for an IPA application to create a fluid meniscus. In the case of -Bay %, the proximal connector 106 is very close to the top surface of the wafer 1 〇 8 13 1251511

(For example, the 81 processing operation, the thin joint 106 can also be used to process Si/Γ曰, ί, 电, 矿, etc.) the bottom surface of the wafer 108. On the "processed day I, ^ should be - turn", the near joint 106 can be connected to the top axis 1G8a through the inlet _ play along the proximity axis; by applying 1PA 31〇叩fi, such as ^·*, Vacuum 312 passes through outlet 304 and process fluid 314 through inlet port to face 116. It should be understood that the inlets, inlets/mountains shown in Figure 3 are not used, and any suitable example of a stable fluid meniscus may be used, such as those described herein. In one implementation, the meniscus 116 having a high velocity fluid layer, as explained further, the 'Benuli effect can be generated on the wafer 1〇8, thus reducing or draining the force to reduce the fluid (eg gas, matter, liquid, etc.) to the fluid bow / from IBJ 丨 _ [ (3, the boundary of the need. 曰 f f f 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 τ τ τ It should be understood that in the embodiment discussed with reference to Figure 6A, the application of the non-essential, the fluid meniscus 116 can still be produced without applying IPA. Although Figure 4 ... does not deal with the top surface l 8a, It should be understood that the underside 1 rib I of the wafer 1 8 is processed in the same manner as in the shell. In one embodiment, the inlet can be used to apply isopropyl alcohol (IpA) vapor toward the top surface of the wafer 108; , outlet 3〇4 = to add vacuum ~ to the area immediately adjacent to the wafer surface to remove fluid or vapor that may be at or near top surface 108a. As noted above, we should be aware of any suitable combination of inlet and outlet. Can be used as long as the meniscus 116 can be formed; IpA can be stored in the appropriate form For example, an IpA system in which vapor is present passes through the IPA vapor input using the gas; further, any suitable fluid (eg, cleaning fluid, drying fluid, etching) for processing the wafer and improving wafer processing quality may be employed. Fluid, plating fluid, etc.) In an embodiment, IPA inflow (infl〇w) is provided through inlet 302, vacuum 312 can be applied through outlet 314, and process fluid inflow 314 can be supplied through in 316, thus If a fluid film is present on the surface of the wafer 108, the first fluid pressure is applied to the wafer surface by the IpA inflow 31〇, and a second fluid pressure is applied to the wafer table by the processing fluid inflow 314. 14 1251511 The force of ΐ is applied by vacuum 312 to remove the ▲ body, IPA and fluid film on the wafer surface. Therefore, in a wafer processing example, when processing fluid inflow 314 and PA When the 310 is applied toward the surface of the wafer, the fluid on the surface of the wafer (if there is a mutual mixing; at this time, the treatment applied to the surface of the wafer is doubled, and the intrusive flow is encountered.) To be formed, face 18 (also known as helium/treatment fluid interface jig), together with vacuum, assists in the removal of process fluid inflow 314 and other liquids from the surface of wafer (10). ίirriIPA/Processing Fluid Interface 118 The surface of the bribe is lowered. The fluid is almost immediately removed by the vacuum applied by the exit code. (4) any of the treatment fluid and the rounded surface that stays in the area between the joint and the wafer surface. The fluids together form a meniscus 116, wherein the meniscus is the IPA/treatment fluid interface 118; therefore, the meniscus 116 is oriented toward the surface and is at the same time as any fluid f of the wafer fab. Was removed. After two, ri has completed its purpose according to the operation, the processing fluid from the wafer surface is immediately removed to avoid the formation of fluid droplets on the surface of the dried wafer, which reduces the wafer (10). The possibility of contamination; the pressure of the IpA down injection (which is caused by the flow of the IPA) also helps to control the meniscus 116. The flow rate of the N2 carrier gas can assist _ or push the treatment fluid out of the area between the in and inflow and exit the outlet (vacuum outlet), wherein the flow system 304 is output from the proximal joint; attention should be paid to the push treatment Fluid can be used to optimize meniscus boundary control. Therefore, when ☆ is absorbed and is sucked to the outlet 3〇4, since the gas (for example, air) is accompanied by the fluid non-tank exit 3〇4, the boundary constituting the ΙΡΑ/treatment fluid interface 118 is not a continuous boundary; In the case of the vacuum from the export program: 1,, and, when the fluid on the surface of the circle, the person entering the exit 304 is a non-continuous body, which is similar to the vacuum applied to the fluid and gas. The fluid and gas that is sucked up through the suction. Therefore, when the proximal joint wrist moves, the 15 1251511 meniscus is connected along the surface, and the silk-liquid-fluid or fluid-only fluid interface 118 has been used because of the desired equipment configuration and fluid level. Another 1 open = dry = = month with an appropriate number of entries 302, exits 304, and entries 3〇6.丄^Use any liquid flow rate and vacuum flow rate to enter the vacuum outlet (4), so there is no gas flow left in the sputum; it should be clear that our fluid flow, as long as it can maintain the understanding of the formation of the meniscus 116 The volume flow can be changed according to the size of the proximal joint. The wafer processing operation can be used to process the fluid according to the specific processing used to generate the wafer cleaning operation; in a similar ^ = Unlike the inlet and outlet configurations, it is the case that the wafer processing meniscus can also be used for liquid crystals, and the liquid crystals can be used for wafers. In another embodiment, it is possible to use two precursors such as copper sulfate and gold chloride. , silver sulfate, etc. with electrical input. 1 Figures 54 to 9 show an embodiment of a proximal joint 106 that can and rightly process the flow, apply it to the wafer and remove the treatment fluid by at least - sigma 2 an inlet. The preferred thinness discussed in paragraphs 5 to 9 can be produced - stable and liquid level without the need for application; in an exemplary embodiment, proximity: hunting by at least - human application - high speed Overlayer to the surface of the wafer, and through at least one outlet from the height The fluid layer removes the fluid to create a fluid meniscus, and applying a high velocity fluid layer between the proximal joint and the wafer surface creates a Cannino-type effect, which can be established on the surface area of the wafer in contact with the fluid and the liquid surface. Low downforce. In one embodiment, when a fluid is applied to the surface of the wafer, the combination of vacuum from the exit and a small gap between the joint and the surface of the wafer can result in a higher velocity composition 16 1251511 The fluid of the layer. Therefore, the fluid of the meniscus of the fluid passes over the surface of the wafer at a high speed, wherein the higher flow rate is generated by removing the vacuum of the fluid and the fluid flowing in a small gap between the rounded surfaces of the joints. When the gap between the proximal joint and the wafer surface f becomes smaller, the flow velocity of the fluid constituting the high-speed fluid layer increases. Therefore, the low-pressure region can actually drag the proximal joint and the wafer toward each other until the wafer surface and the proximal joint, the surface Achieving a balanced distance, the resulting fluid bends are applied in an adaptive manner and remove fluid from the wafer surface without leaving fluid droplets, but still A very low level of contamination is left on the wafer surface. / Figure shows a top view of a proximal joint 1 〇 6 according to an embodiment of the invention. The proximal joint 106' includes a processing region 320, which includes a An area having a plurality of inlets 306 and a plurality of outlets 304; in one embodiment, the plurality of inlets 306 are configured to apply a flow of a high velocity fluid layer on the surface of the wafer to apply a processing fluid to the surface of the wafer; In one embodiment, the plurality of outlets apply a vacuum to the edge of the fluid meniscus and remove a portion of the fluid input from the plurality of inlets 306 from the fluid meniscus. As described in more detail with respect to Figure 6A, the wafer The high velocity fluid on the surface is a fluid meniscus on the surface of the wafer that can produce any suitable type of wafer surface treatment depending on the processing fluid used; in addition, at the proximal joint 1〇6, above the wafer 108 In one embodiment, a high velocity fluid layer that is both surface tensioned and a whiteurly effect is supported below the processing region, so that a low pressure is created between the proximal joint and the crystal, because in the fluid meniscus The moving fluid moves extremely fast, and this low pressure causes the wafer 108 to attach to the proximal joint, while the fluid meniscus acts as a liquid bearing; in addition, the formation of a stable and extremely thin fluid meniscus precludes having another source The outlet is used to reduce the demand for liquids such as IPA vapor by applying surface tension. Figure 5B shows a perspective view of a proximal joint 1〇6 in accordance with an embodiment of the present invention. In one embodiment, the proximal joint 106' includes a row of inlets 306 that are substantially surrounded by a plurality of outlets 3〇4, so that when a process fluid is applied to the wafer surface from the column inlets 3〇6, the high velocity fluid is in the crystal The rounded surface forms a layer that creates a Cannino effect; it should be understood that the proximal joint 106 can have any suitable size and shape as long as a fluid meniscus having a high velocity fluid layer can be created. In an embodiment, the proximal joint 106, the small = crystal 17 1251511 = operatively operated; in another embodiment, the vehicle is directly adjacent to the length of the vehicle, in such an embodiment, For example, refer to a circle 矣 ^ ^! Near joint 1 〇 6 can be processed by scanning over the wafer once, for example, 3 head Μ 6, can be made of any suitable material, the remaining near joint part Can be made of plastic. For example, the rapid flow of the shibei stone--the embodiment produces a high-speed Ζΐ 306 speed application on the surface of the crystal®, thus forming a fluid layer that is fluid to the # dry·p body layer and moves at a south speed. The process flow system from the surface of the wafer 33f=i is traversed by the exit arrow 3 and by way of another embodiment, the vacuum 334 is only available for the source outlet 304 1 shown. The volume of the treatment fluid removed by the applied treatment fluid, which is removed by the outlet

Etc. In the only example, once the fluid meniscus 116 is essentially established; M 〇〇Lt:" f ηί ΪΛ the steady state of both can make the material surface stable; therefore, through the outlet

The flow rate of the treatment fluid applied by Hi plus through the inlet 306 can be adjusted and adjusted, so that the amount of fluid removed from the fluid meniscus 116 by the parent unit time input to the fluid meniscus 116 is the same. In the case of Beckham, the fluid flow on ϋϋ4 is proportional to the fluid velocity multiplied by the height of the space between the proximal joint and the space between '曰曰8VrT, and therefore, by increasing the volume of the body and increasing the removal from the source exit. The fluid, which generates a high-speed fluid between the wafers 1 and 8, thereby achieving a reduction in fluid velocity; in addition, the height can be set at a certain point and the flow rate can be kept constant, 18 1251511 by this = fluidization speed The near joint 1〇6 creates a low pressure zone between the wafers 1 and 8. Therefore, the smaller the twist, the greater the fluid velocity, and if the flow rate is assumed to remain fixed, the smaller the gap between the proximal joint and the surface of the wafer, the greater the fluid flow rate on the surface of the wafer. Thus: In a consistent embodiment, in the region between the inlet 306 and the outlet 304, the fluid flows at a high velocity in the relatively high velocity fluid region 348, so that a situation will occur above the surface of the wafer to be treated by the fluid bend 116. The low pressure zone; this low pressure zone can create an attractive force between the proximal joint 1〇6 and the wafer 1〇8 compared to the rolling zone surrounding this zone. - through the white Nuuli effect caused by the high-speed fluid layer and through the surface tension, the fluid meniscus is extremely stable and can move across the wafer surface without deteriorating the meniscus; in addition, it is generated on the wafer surface The upper white Nuo effect can create a force 346 between the proximal joint 106' and the wafer 108 that maintains the proximal joint 1〇6 proximate to the crystal 108. Thus, in an embodiment, the distance 382 between the proximal joint 116 and the crystal can be varied depending on the velocity of the fluid in the fluid layer constituting the fluid meniscus 116. The particular fluid velocity within the two particular paths can produce different types of low pressure zones, so by applying fluid into the fluid meniscus at an increasing flow rate, the low pressure zone can become a lower pressure zone, thereby increasing The attraction between the wafer 1〇8 and the near joint 1〇6. Therefore, by controlling the velocity of the fluid in the fluid meniscus 116, the low pressure value between the wafer 1〇8 and the proximal joint 1(10) can be φ^, thus, by a fluid flow meniscus = 116 at a specific flow rate. By applying a fluid, a certain level of low pressure can be achieved, so that the pressure against the back side of the wafer can be maintained constant, but the pressure on the front side (the side with the flow and the meniscus) becomes smaller. Therefore, the wafer on the back side of the wafer 108 pushes the wafer in the direction of the proximal joint 106'. ' Because the low pressure value and the proximal joint 1〇6 are related to the attractive force value between the fluid meniscus 116, the space between the proximal joint 1〇6 and the wafer 108 can be changed by the flow rate, in one In various embodiments, the distance 382 can be set and the process fluid velocity in the direction 4 can be utilized to produce an optimum fluid meniscus cohesion. Furthermore, by applying a high velocity fluid to create the fluid meniscus 116, the low pressure region created by the high velocity stream 19 1251511 can cause the wafer (10) to move, position and align the wafer (10). In addition to θ ^, by reducing the height to a very short distance, the flow becomes smaller and still slidable, so that a smaller amount of fluid can be used for wafer processing; this can save costs and improve wafer processing operations. Product f. It should be understood that: iu/iP# may use any suitable type of fluid to create fluid meniscus 116. With ί fluid, we may perform any appropriate type of wafer processing for the treatment, rinsing, drying, etc.; The proximal joint 106, the line configuration on the treated surface, the fluid meniscus 116 can handle dry or wet surfaces. In accordance with the desired wafer processing operation, the distance 382 can be any suitable I f 'as long as the fluid meniscus m with the fluid layer of the current velocity can be generated in the proximal joint == p:r embodiment, distance 382 In the embodiment, the distance 382 is between about 50 micrometers, and in a preferred embodiment, the distance 382 is about 70 micrometers. When the fluid is passed between the inlet and the outlet, the flow rate may be between 5 cm/sec and drain 3: in another embodiment, the proximal joint may be such that the fluid is between 10 cm'/sec /, 100 The speed between cinfsec moves from the inlet to the outlet along the surface of the wafer. The height of the fluid surface (for example, the near joint 1〇6, and the wafer 108 ----- -^ 1 speed = flow / 2 (LH) ~ ' ~ - one by one Ι 所示 所示, L is The length of the sap surface 116, and H is the fluid meniscus =. It should be understood that: according to the desired wafer processing operation, the fluid meniscus is of any suitable size; the size of the lower hull meniscus 116 is exemplified It should not be inferred that the fluid meniscus is limited to these dimensions. In one embodiment, the face 116 may have a length of 5 〇 coffee and a width of about 0.25 ft. By the equation of the Li Ricci m, If the height is 1.5, the flow rate is 1 coffee ml/min. The speed of the gate is 10 cm/sec; when the flow rate is 500 ml/min, the speed is 5 cm sec, and the flow rate is 1〇〇. In ml/rain, i _ Shen speed 20 1251511 degrees can be obtained. In another example, if the height of the fluid meniscus (for example, the gap between the proximal joint 1〇6 and the circle 108) is about 0.005 cm, then It can be 167 cm/sec at a flow rate of L/min, 83 cm/sec at a flow rate of 500 ml/min, and 17 cm at a flow rate of 1 〇〇ml/min. Speed of sec. demonstration The difference is for illustrative purposes only, and it should be understood that the above calculations may vary depending on the size of the fluid meniscus 116. Figure 6B shows an angle-degree tilt near the plane of the wafer 1〇8 in accordance with an embodiment of the present invention. Joint 106'. In one embodiment, the proximal joint 1〇6 is at an angle. 0452 tilted 'where the distance between the proximal joint 106' and the wafer 108 can vary depending on the desired configuration and process operation; Θ452 angle Any suitable angle may be used as long as the flow meniscus 6 can be formed on the surface of the wafer; in one embodiment, the angle is between 0 and 2 degrees; in another embodiment, 0 The angle of 452 can be between 2 and 2 degrees; and in a preferred embodiment, 0 452 is about 〇 3 degrees. Because of the angle Θ 452, the shape of the meniscus 116 can be varied. In the example, by including the angle Θ 452 and the proximal joint 1〇6, it can be optimized to operate in a special direction. For example, as shown in FIG. 6B, the proximal joint 1〇6 is raised to the right side. The left side of the proximal joint 106' is high, so the fluid bend = surface due to the proximal joint 1〇6 316 has a larger height on the right side than on the left side; in this embodiment, the fluid meniscus = 6 has an optimum movement mode to move to the left side (for example, the leeward surface of the fluid meniscus 316 φ is thin. The front end), and the surface of the wafer to be processed will first encounter the left side of the fluid meniscus 316. In this case, the right side of the fluid meniscus 316 will eventually leave the area. The fluid-air interaction at the boundary 374 on the right side of the meniscus 316 interacts with the treated area of the wafer surface as compared to if the right side of the fluid meniscus 316 is the last contact to the treated area. In a more efficient manner, it is kept dry; this =, in the configuration shown in FIG. 6B, when the front end of the fluid meniscus 316 is thinner, the proximal joint 106 can be moved in a faster manner, so More wafer areas can be processed in a special day. In one embodiment, the wafer 108 can be supported in a robust manner so that the distance between any portion of the proximal connector 1〇6' and the wafer 21

1251511 will not change, so the processing environment can remain fixed. t ; 108 502 7〇si〇l^ Head I:, 8 books? In the embodiment of the present invention, a butterfly 106a, > ^106b, > 106a" 盥ιηκκ, ^^ inlet 6 is formed by applying a treatment fluid to create a high-speed fluid layer between the proximal joints 〇dR^^: 6b to form a fluid meniscus. Face 116, · 3:6 : ^?, : ί leg "separated, so ' can produce a height distance zone, thereby generating attraction 1 in the near joint position, and difficult, because of the i production test The fluid level f produced can be made relatively thin depending on the volume of the liquid that constitutes the liquid surface. Because the nip area, the fluid meniscus becomes extremely stable and movable between the proximal joint 106a" and the gallbladder'; in addition, the generated J liquid moves and the F leaves water droplets and can remain The six county floors are dry and free from fouling, thereby improving the quality of the wafer processing operation. Figure 9 shows a proximal joint 106"" having a first component and a second component in accordance with an embodiment of the present invention. In an embodiment, the proximal connector 1〇6, may include a first component 6〇〇 disposed adjacent to the wafer 108 and a second component 602 surrounding the first component 6〇〇; in this JT embodiment, The first component 600 can be a material having a robust resistance function, such as a stone, and the second component 602 can be a relatively easy to assemble material such as plastic, pet, etc., while the first component 600 and the second component 602 can be secured by an adhesive. Or glued together. In an embodiment, the first component 600 and the second component 6〇2 can be configured such that the first component 600 is closer to the wafer 1〇8 than the second component 602, in this manner, having the largest The portion of the proximal joint 106''' of the dimensional tolerance can be set to generate a flow In the treatment region of the meniscus 116. In an embodiment, the proximal joint 106"" can include at least one source inlet 306 and to 22 1251511 (10). The source = port 306 can apply processing fluid to the wafer face removal fluid. Thus ^^_^ can use vacuum to the surface of the wafer from the wafer (10), therefore, / / 22 is born in the wafer and the near joint to give the body's meniscus 116, and can be transparent Concentrate, should, in order to stabilize the flow of liquids ^ can be moved on the surface of the wafer without leaving ^ ^ to | fluid production and bending; (four) type of joints of the joint, from: face agent There is any suitable type of use that can produce a fluid meniscus. κ', 1 money can be combined with the embodiment of the invention described herein to Lu Ming = 10.10 The wafer processing system 1100 of an embodiment of the invention. Any suitable means of crystal 81 can be used, such as a roller, etc. System 1100 can include rollers 1102a, 11〇〇 and > and rotate the wafer to subject the wafer surface to processing; the system is attached to the upper body ϋ 接, a and 1〇6b' can be respectively attached in the embodiment, (4) and the upper arm 11〇4b' upper arm 11 The lever arm 1104b is a part of the carrier assembly 11G4, wherein the proximal connector carrier assembly ZZ, 〇6a and the biliary are moved in a substantially straight manner along the radius of the wafer: in the embodiment, the proximal connector The component 1104 can be used to support the proximal joint 〇6a above the 曰曰0 of the wafer and the proximal joint 1〇6b under the wafer, which can be achieved by vertically moving the upper arm 1104a and the lower arm·b. Therefore, once the proximal joint is horizontally moved into a position where the wafer processing is started, the proximal joint 1 and the 1 rib can be vertically moved to a position immediately adjacent to the wafer. In another embodiment, the fluid meniscus can be Formed between the two proximal joints l6a and 16b, and moved to the top and bottom surfaces of the wafer; the upper arm 41a and the lower arm 1104b may be configured in any suitable manner to enable the proximal joints 106a and l The crucible 6b can be moved to perform wafer processing as described herein. It should be understood that the system can be assembled in any suitable manner as long as the proximal joint can be moved to the immediate vicinity of the wafer to create and control the meniscus on the wafer surface. In another 23 1251511 above the wafer surface, in this embodiment, the proximal joint is rotatable and straight Jit ϊίϊ; and in another embodiment, the lever arm can be close to the joint 106 ^ 曰 round ^ The way to move. Although only one order can be displayed on the side of the wafer, it can be in the early-side. Other surface preparation steps / another: On the side of the master (10), for example, scrubbing the wafer. Close to ίίΖί Shi =' ^ delete can contain the conversion surface of the near-wafer surface of the Japanese, so that 'two Gan in this example, when the fluid meniscus in a controlled tubular bear

‘Use the earthen earth to convert between the surface of the crystal and the surface of the crystal; if only the wafer side is to be processed, Ϊ use a lever arm with a proximal joint. UWJ head 1 〇 mm hair, Ming - the implementation of the wafer processing operation of the proximity movement, with the middle joint 1 〇 6 in the immediate vicinity of the wafer 〇 8 top face hall ι ι λ joint (10) on the wafer surface The fluid generated on the _ is washed, dried, and subjected to proper wafer processing operations, such as cleaning and rinsing the bottom surface. In the embodiment, the wafer (10) is rotatable, so that the head (10) can be rotated when the liquid level is processed on the top surface 108a of the wafer; in another case, the fluid can be generated on the surface of the wafer at the near joint 1G6. The meniscus weave and the proximal joint (10) can be moved or scanned over the surface of the wafer, and the body test surface moves along the surface of the wafer; in another embodiment, the proximal joint = is made large enough, such that the fluid is bent The face may include the surface area of the entire wafer. In this consistent embodiment, by applying a fluid meniscus to the wafer surface, the entire wafer surface can be processed without the proximal joint moving. In one embodiment, the proximal joint 106 includes source inlets 1302 and 1306 and source = 1, 1304; in this embodiment, the isopropanol vapor IPA/% 1310 in the nitrogen is permeable, and the source inlet 1302 is applied to the crystal. The circular surface, vacuum 1312 can be applied to the wafer surface through source outlet 1304, and process fluid 1314 can be applied to wafer surface through source inlet 13〇6. 24 24 1515111 In one embodiment, except that vacuum 1312 is applied to the wafer. The circular surface l〇8a removes the treatment fluid 1314 and the IPA/% 1310, and the application of the IPA/% 1310 and the treatment fluid may also produce a fluid meniscus 116, which may be formed on the proximal joint 106 and the wafer. A fluid layer between the surfaces that can move across the wafer surface 10a in a stable and controllable manner. In one embodiment, the fluid meniscus ιβ can be formed by fixed application and removal of the treatment fluid 1314, depending on the size, number, shape, and/or size of the source inlet 13〇6, the source outlet 130^, and the source inlet 1302. The pattern, the fluid layer forming the fluid bend, level 116 can have any suitable shape and/or size. According to the desired type of fluid meniscus, we can use any suitable flow of vacuum, IPA; %, and treatment fluid; and in another embodiment, between the proximal joint 106 and the wafer surface. The distance, when generating and utilizing the fluid meniscus 116, may omit the use of IPA/N2. In this embodiment, the proximal joint 1〇6 may not include the source input=1312. Therefore, only the treatment fluid 1314 is applied by the source inlet 13〇6 and the treatment fluid 1314 is removed by the source outlet 1304 to generate a fluid bend. Liquid level 116. In other embodiments of the proximal joint 106, depending on the configuration of the fluid meniscus to be produced, the treated surface of the proximal joint 106 (the proximal joint region at which the source inlet and the source outlet are disposed) may have any suitable topography; in one embodiment The treatment surface of the proximal joint may be serrated or may protrude from the surrounding surface.

FIG. 11B shows a top view of a portion of the proximal joint 1〇6 according to an embodiment of the present invention. It should be understood that the configuration of the proximal joint 1〇6 described with reference to FIG. 8B is essentially a non-existent The proximal joint wire creates a fluid meniscus that is removed from the wafer surface to be produced on the wafer surface; in addition, as described above, when the proximal joint 106 is set = use Ν 2 / ΙΡΑ Other embodiments of the proximal joint (10) do not need to have a source inlet 1 continent 2 when a fluid meniscus can be created. In the top view of 屮mi, from left to right, respectively, the group source population, :, and the origin of the lame, the group source population, the group source σ deletion, and a group of source portals 13G2, therefore, When the Ν2 layer and the processing chemical are transferred to the region between the near junction 1〇6 25 1251511 and the wafer 108, the vacuum removes the pA and processes any fluid film that may be present on the wafer 1G8 and/or Or the source inlet 1302, the source inlet 1306, and the source outlet 13〇4 of the impurity== may also have a shape type 'for example, a circular opening, a triangular opening, a square shape: the second embodiment has a source inlet 1302. , source inlet 1 and source outlet 13 () 4 IS: ΪίΪ:: according to the desired fluid meniscus 116: size and shape, near _ (10) can be any suitable size # miscellaneous. In the example, the proximal joint can be extended to a radius smaller than the radius of the wafer. In the example, the 'near joint can extend to a radius larger than the wafer; in another case ^

The joint can extend beyond the diameter of the wafer. Therefore, depending on the wafer table size that is expected to be processed at any given time, the fluid meniscus can be of any suitable size; in addition, we should understand that the proximal joint (10) can be placed according to the wafer processing ^ The appropriate orientation, such as the horizontal direction, the vertical direction, or any other suitable orientation therebetween. The proximal joint 1 〇 β can also be included in a wafer processing system that can perform one or more types of 曰 processing operations. , s曰, nc show the inlet/outlet pattern of the proximal joint 106 in accordance with an embodiment of the present invention. In this embodiment, the proximal joint 106 includes source inlets 13〇2 and 13〇6 and a source outlet 1304; in one embodiment, the source outlet i3〇4 can surround the source inlet 13〇6, and the source inlet 1302 can surround the source Exit 1304. Figure 11D shows another inlet/outlet pattern of the proximal joint jog in accordance with an embodiment of the present invention. In this embodiment, the proximal joint 1〇β includes source inlets 13〇2 and 1306 and source outlet 1304; in one embodiment, source outlet 1304 can surround source inlet 1306, and source inlet 13〇2 can at least partially surround source Export 13〇4. Figure ΠΕ shows yet another inlet/outlet pattern of the proximal joint 〇6 in accordance with an embodiment of the present invention. In this embodiment, the proximal joint 106 includes source inlets 1302 and 1306 and a source outlet 1304; in one embodiment, the source outlet 13〇4 can surround the source inlet 1306, and the proximal joint 1 does not include the source inlet 13〇2 because In one embodiment, the proximal joint 106 can create a fluid meniscus without applying IPA/%. It should be understood that the above inlet/outlet patterns are exemplary in nature and that any suitable type of inlet/26 1251511 exit pattern can be used as long as a stable and controllable fluid meniscus is produced. Although the present invention has been described in terms of several preferred embodiments, it should be understood that those skilled in the art will be able to practice various modifications, changes, and equivalents. Therefore, the present invention is intended to cover all such modifications, additions, modifications, and equivalents of the present invention. The present invention will be described in conjunction with the accompanying drawings Make people more clear. For convenience of explanation, the same reference numerals denote the same structural elements. μ...

Mine Figure 1 shows the movement of the cleaning fluid on the wafer during the SRD drying process. Figure 1 shows the demonstration process for wafer drying. 2 shows a wafer processing system in accordance with an embodiment of the present invention. 3 shows a close-up of a wafer processing operation in accordance with an embodiment of the present invention. FIG. 4 shows a crystal processing operation that can be performed using a proximal joint in accordance with an embodiment of the present invention. Figure 5A shows a top view of a proximal joint in accordance with an embodiment of the present invention. Figure 5A shows a perspective view of a proximal joint in accordance with an embodiment of the present invention. Figure 6A is a side elevational view of a proximal joint for creating a fluid meniscus having a high fluid layer on a wafer surface in accordance with an embodiment of the present invention. ^ Back, Figure 6A shows a proximal joint that is inclined relative to the plane of the wafer in accordance with an embodiment of the present invention. Monthly Figure 7 shows the extension of the extension across the radius of the wafer in accordance with an embodiment of the present invention.

Figure 9 Near joint. A close-up display in a process on a wafer in accordance with an embodiment of the present invention is shown in FIG. 10 having a first component and a second component in accordance with an embodiment of the present invention. FIG. 10 shows a wafer processing system in accordance with an embodiment of the present invention. . Figure 11A shows a proximal joint for performing a drying operation in accordance with an embodiment of the present invention. A top view of a portion of a proximal joint in accordance with an embodiment of the present invention is shown. case. BRIEF DESCRIPTION OF THE DRAWINGS One of the inlet/outlet views of a proximal joint in accordance with an embodiment of the present invention is shown in FIG. Inlet/Outlet Figure 11E shows a near joint port pattern in accordance with an embodiment of the present invention. Another Inlet/Output [Major Component Symbol Description] 10 12 14 16 18 20 22 26 100 Wafer Liquid/Gas Interface Rotation Direction Fluid Direction Arrow Wafer Drying Program Hydrophilic Region Wafer Hydrophobic Region Fluid 106''' proximal joint wafer processing system 102a, l2b roller 104 arm 104a upper arm 104b lower arm 106, 106', 1〇6", 106a, 106b proximal 108 wafer l〇8a crystal Round top surface 108b bottom surface of the wafer 28 1251511 116 meniscus 118 IPA / treatment fluid interface 302 inlet 304 outlet 306 inlet

310 IPA 312 Vacuum 314 Process Fluid Inflow 316 Fluid Meniscus 320 Treatment Area

334 Vacuum 336 Process Fluid Application 344 Direction Arrow 346 Power 348 Higher Velocity Fluid Area 374 Boundary of Right Side of Fluid Manifold 382 Distance between Joint and Wafer 502 Direction of Handling Wafer 600 First Part of Near Joint

602 second part of the proximal joint 1100 wafer processing system 1102a, 1102b, 1102c roller 1104 proximal joint carrier assembly 1104a upper arm 1104b lower arm 1302 source inlet 1304 source outlet 1306 source inlet 1310 isopropanol vapor in nitrogen 29 1251511 1312 Vacuum 1314 treatment fluid

Claims (1)

1251511, the scope of the patent application: the fluid layer forms a fluid meniscus 1. A method for processing a substrate, comprising: generating a fluid layer on the surface of the substrate, the generation comprising: moving a proximal joint close to the surface; - applying a fluid to the surface from the vicinity of the joint when the ιι/Λΐ? county is near the county-shaped fluid layer of the substrate; and adding a vacuum from the heart to remove the fluid from the surface through the proximal joint; the "IL The body is shaped to move faster as the proximal joint approaches the surface, and the fluid layer between the proximal joint and the substrate travels. The method for processing a substrate according to item 1, wherein the head is produced at a distance of between about 5 μm and about _μm, and the velocity at the mouth is about 5 cm/ Between sec and 200 cm/sec. The processing method of the substrate of the second item of the Quantitative Range, wherein the fluid is in the claw/claw; about 50 ml/sec and about 5 〇〇mi/sec. The method of processing the substrate, the cleaning operation, the key operation or the drying operation of the liquid meniscus. 5. The processing method of the substrate according to the scope of the patent application, the fluid layer comprises - the fluid population is applied to the surface of the substrate and the fluid is removed from the surface of the substrate through a fluid outlet. The method of processing the substrate of the fifth item of the mt, mt range, Wherein the fluid is one of a worm-like body, a pen-plating fluid, a cleaning fluid, or a rinsing fluid. The method of processing a substrate according to claim 1, wherein the fluid layer is formed to reduce surface tension A small fluid is applied to the fluid meniscus. & The processing method of the substrate of the fifth item, wherein the bean body comprises applying the vacuum through the fluid outlet. The octagonal private machine 4 is a device for processing a substrate, comprising: a proximal joint capable of moving near the surface of the substrate And forming a fluid layer on the surface of the substrate to form a fluid meniscus, the proximal joint comprising: 31 1251511 哕 1 1#^"/ inlet for applying a fluid to the surface of the substrate, Forming at least one outlet for removing the fluid from the surface of the substrate; ί taking up the position to make the county body closer to the surface of the county, and then the speed of the stomach is large, along the proximal joint The fluid layer is moved between the substrates. The apparatus for processing a substrate according to claim 9 wherein the member is used to move to a volume of between about 5 microns and about 500 microns from the surface during operation. The first 5 3 patents of the processing of the substrate for the processing of the substrate, wherein the near-body is applied with a flow rate of about 5 〇 and the side of the heart, and the liquid is disposed of the substrate-like device of the ninth item. The flow of one night ^ bad operation, clean up The operation of the substrate, the electroplating operation, or the device for processing the substrate, wherein the speed between the cough inlet, the ^j^10 and the 100 CDl/SeC, the fluid is self-suppressed The surface of the substrate moves to the outlet. The body is a device for processing substrates for a total of (4), wherein the flow ..., / body = one of a plating fluid, a cleaning fluid, or a flushing fluid. 1. The equipment for processing substrates according to item 9 of the patent scope, and the edge-input port of the surface can be applied to the surface of the fluid meniscus, which is used for the 16-shaped new substrate. The equipment, which looks for the table 乂j / claw body is the isopropanol vapor in the rat gas. a substrate preparation system comprising: a connection = L which can be moved closer to the surface of the substrate during operation; a guide for transporting fluid through the proximal joint to the surface of the substrate 32 1251511; and π + a second conduit for removing the fluid from the surface of the substrate, the fluid forming a fluid layer on the surface of the substrate during operation, The flow system travels with the fluid layer between the proximal and lower surfaces of the substrate as the proximal joint is closer to the surface of the substrate. Suner applies the substrate preparation system of claim 18, wherein the proximal joint is moved between about 5 microns and about 500 microns from the surface. The substrate preparation system of the invention is in the range of 18, wherein the proximal joint has a flow rate of about 1 GWseC to apply the fluid: a substrate preparation system for performing side operation Wherein the fluid layer 22 is one of, for example, a crucible, a rhodium plating operation or a drying operation. The pipe application port is finely edited from the body; _, wherein the brother-guided etching fluid, the substrate preparation secret, the towel is the fluid, or the flushing fluid. An additional two, which can be a substrate preparation system of 8 items, further comprising: 25. The body of the patent application is applied to the surface of the substrate. The force reducing fluid is iso-alcohol = substrate preparation system in nitrogen, wherein the surface is 张 ^, pattern: 33