1262554 九、發明說明： 【發明所屬之技術領域】 …本發明與半導體晶圓處理相關 率的施加並由晶圓表面移除流體， 潔之成本的設備和技術相關。 【先前技術】 更具體來説，與為了更有效 同時減少污染物與降低晶圓清 就曰門處®。在母一個這類型式的操作過程中， 就曰曰囫刼作過程來說，需要有效地施加並移除流體。 舉例末α兒，在執行一製造操作過程並殘留不需要 ^ 〇 ^ ,_ s曰圓於一罪者滾動運送帶推動晶圓表面之支架 使用—由化學物質與研磨材料構成之泥漿以產生研 :。此擁容錢留泥漿粒子與殘餘物的聚積在晶圓表 你敝不t要的殘餘材料錄子如果被殘留在晶圓上，除了發生其 夕ί可此導致例如晶®表面上的擦痕與金屬化特徵部間 的父互作料問題。在某些健巾，這樣的缺陷可導致 t晶^的裝置變成不能操作。為了避免丟棄具有不能操作的裝 ^晶圓造成的過度的成本，因此在殘留不需要的殘餘物之製造 刼作過程後，需要充分卻有效地清潔晶圓。 生在一晶圓完成濕式清潔後，晶圓必須有效地乾燥以防止水或 it流體^殘餘殘留殘餘物在晶圓之上。如果允許晶圓表面上的 eg流體瘵發，如同慣常發生的，先前溶解於清潔流體中之小滴 形式、殘餘物或污染物在蒸發(例如··與形成水斑)後將餘留在晶圓 表面要防止蒸發發生，必須在晶圓表面上未形成小滴的情況下， 盡巧^除清潔流體。在嘗試要完成此項工作時，係利用幾種不同 的乾燥技術中的一種，例如··旋轉乾燥、異丙醇(IPA)或馬蘭哥尼 1262554 乾燥。/斤有這些乾燥技術利用某種在晶圓表面上移動液體/氣體介 面t形式，t果適#的維持此形式會導致關表面在不形成小滴 的扬況下乾燥。不幸地，如果移動液體/氣體介面失敗的話，如同 ^上速的所有乾燥方法—樣而經常發生的，小細彡成且蒸發發 術為今日_盛行的乾燥技 她圖ϋ!兒明1 一SRD乾燥過程期間’清潔流體在晶圓ι〇上之 中麵燥過程中’以旋轉14高速旋轉一濕晶圓。在SRD :^用離心力’用來清潔晶_水或清潔流體被由晶圓中 3=侧且最後離開晶圓，如流體方向箭頭16所示。當清 體/氣體介面;Γ產二圓%，更向/;圓，=動(亦即，由移動的液 繼續日r二動成的·;=卜二域，?清潔流體。因此，_ 加，而在移動的液畴分增 形成於晶圓上且污染物可目f失敗’清潔流體的小滴 制小滴的形成與隨後的蒸發是= 要的如此，限 =:功目前的乾燥方法在防止移動染 性的晶圓表面可表面具有難處。斥水 的(水的)清潔溶液。因此，當乾#過^=表面排斥水與以水為基 表面時，餘留的清潔流體(如為且清潔流體被拉離晶圓 斥。結果，該水的清潔流II將希望以7最小晶圓表面所排 圓表面接觸。同時，該水的、、主如、_取夕里的區域與斥水性的晶 面張力(亦即，導致分子向於與自身依附而導致表 Ό 1=7 口此，由於斥水性的交互作用 6 1262554 力’水的清潔流體之球狀體(或 形成在斥水性的晶圓表面上。此小 / 方式 前討論的S雜。SRD舰制在發與先 困難ΐίΐΐ具有在減少晶圓表面上形成之清潔流趙Ξ = 水性的晶圓表面時。某些部分的晶圓s1262554 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to the application of semiconductor wafer processing rate and the removal of fluid from the wafer surface, and the cost of the equipment and technology. [Prior Art] More specifically, in order to be more effective at the same time to reduce contaminants and reduce wafer clearing at the Tuen Mun®. In the case of this type of operation of the mother, it is necessary to effectively apply and remove the fluid in terms of the operation process. For example, the end α, in the implementation of a manufacturing process and residual does not need ^ 〇 ^, _ s 曰 曰 于 者 者 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动 滚动:. This accumulation of money keeps the accumulation of mud particles and residues on the wafer table. If you leave the residual material on the wafer, if it is left on the wafer, it will cause scratches on the surface of the crystal. A problem with the father of the metallization feature. In some wipes, such defects can cause the device to become inoperable. In order to avoid the excessive cost of discarding the inoperable wafer, it is necessary to sufficiently and efficiently clean the wafer after the manufacturing process of residual residue. After a wafer is wet cleaned, the wafer must be effectively dried to prevent residual residue of water or it fluid from remaining on the wafer. If the eg fluid is allowed to burst on the surface of the wafer, as is customary, the droplet form, residue or contaminant previously dissolved in the cleaning fluid will remain in the crystal after evaporation (eg, formation of water spots). To prevent evaporation from occurring on the round surface, the cleaning fluid must be removed as much as possible on the surface of the wafer without droplets. When attempting to do this, it utilizes one of several different drying techniques, such as spin drying, isopropyl alcohol (IPA) or Marangoni 1262554 drying. These drying techniques utilize some form of moving the liquid/gas interface t on the surface of the wafer. The maintenance of this form can result in the surface being dried without the formation of droplets. Unfortunately, if the mobile liquid/gas interface fails, as with all the drying methods of the speed up, it often happens, and the small fineness and evaporation of the hair is today's prevailing drying technique. During the SRD drying process, 'cleaning fluid during the surface drying process on the wafer '' rotates a wet wafer at a high speed by rotation 14. The SRD is used to clean the crystal water or the cleaning fluid is removed from the wafer by the 3 = side and finally exits the wafer, as indicated by the fluid direction arrow 16. When the clear body/gas interface; the yield of 二2%, more to /; circle, = move (that is, by the moving liquid to continue the day r = 2; = Bu domain, ? cleaning fluid. Therefore, _ Adding, while the moving liquid domain is formed on the wafer and the contaminant can fail. 'The formation of the droplets of the cleaning fluid and the subsequent evaporation are=this is the case, the limit =: the current drying of the work The method can prevent surface damage on the surface of the wafer which is resistant to mobile dyeing. The water-repellent (water) cleaning solution. Therefore, when the dry surface is repelled with water and the water-based surface, the remaining cleaning fluid ( If and the cleaning fluid is pulled away from the wafer repulsion, as a result, the cleaning stream II of the water will be desired to contact the rounded surface of the minimum wafer surface. At the same time, the water, the main, the area of the eve of the night and Water-repellent crystal plane tension (that is, causing the molecules to attach to themselves and causing the appearance of Ό 1 = 7 mouths, due to the interaction of water repellency 6 1262554 force 'water's cleaning fluid spheroids (or formed in the repulsion On the surface of the water-based wafer. This small / way discussed before the S-spin. SRD shipbuilding in the first and the first difficulty ΐ ΐΐ The clean flow formed on the surface of the wafer is less than the surface of the water-based wafer. Some parts of the wafer s
。部分20吸引水而在那個區域中積聚流體26'有部A ^，所以那個區域排斥水且因此在晶圓ω的那個部分上可^ ^ίΐ： l〇 =更。&可科不—朗晶K乾燥，且 度並因此降低晶圓生產良率。 犯日刀々木耘 曰曰 m本吾人需要—種方法與設備，其可藉由實現能減少在晶 0表f上之污染沉積物的最佳流體控制與施加於一晶圓上，而 免先岫技術的弊病。今日時常發生的此類沉積物降低可接 圓之良率且增加製造半導體晶圓的成本。 φ 【發明内容】 廣泛來說，本發明經由提供一能夠以一有效的方法在晶圓表 面上移除流體同時減少晶圓污染之基板處理設備來滿足這些需 要。須注意本發明可以為數眾多的方法實施，包括以一過程、一 設備、一系統、一元件或一方法。以下會敘述數個本發明的發明 實施例。 x $在一實施例中，提供一處理一基板的方法，其包括產生一流 體彎液面以處理該基板並施加該流體彎液面至該基板之一表面。 此方法更包括減少在基板處理環境中來自一表面之流體蒸發。 在另一實施例中，提供一基板的處理方法，其包括產生一流 7 1262554 體营液面以處理絲板並施加該流體彎液面至該基板之一表面。 Μ還實施Ϊ中，提供—處理基板之設備，其包括一能 ΐϋ’弓/夜面以處理—基板表面之近接頭與—配置來儲放該 k接頭之室’其巾亦配置該室以___環境控觀體供給予該室。 一、2施=]中，提供—處理基板之設備，其包括一能產生 广七液㈣處理-基板表面之近_與—設置於近接頭表面 導管以施加一環境控制氣體至—位於該近接頭 本發^之優點好。最制地，本發日种所描述之設備鱼方 地處理(例如那些需要趙之施加與 ^ =:乾燥等)半導體晶圓，而減少殘留於晶圓表:上Sii 染。因此’可以增加晶圓的處理與生產且由於有效的 曰曰圓處理，可達到較高的晶圓良率。 之、、古彎液面之產生與使用及聰明的控制來自晶圓 理ΐ域的晶圓處理致能。特別地是，可控制晶圓處 ΪΪ3Γ2目對溼度層級’所以，舉例來說，大氣相對溼 ;:當晶圓處理區域之相對澄度層級高 、:二01體療發為南度可控制的。整個晶圓處理室可I右- ΐ?:區5ΐ:ί相對層級之大氣。此外，-晶圓周圍之 之流體蒸====姆絲敎_縣自晶圓 由舉經 【實施方式】 了摇理基板之方法與_的發明。在下面的敘述中，A 了 k供對本發明徹底的了解，提出了許多特定細節。^中^ 8 1262554 特定細節之下將會^解本發明在不具有這些 中，為mi^稍障/兄下，仍為可實行的。在其他例子 程並未詳細敘^。㈣林必要的混淆’眾關知的處理操作過 令明2說明—示範的晶圓處理系統之實施例。明確地說，下圖 不之實施例中，該近接頭可由—晶圓之中心ίϋΐϊ n=r圓之一邊緣移動至另-位:==晶= #、繁他非線性鷄，例如，徑向運動、關運動、螺 軍動等。該運動亦可為任何如使用者要求Ϊ適ΐ 以ϋ方二？外’在一實施例中，晶圓可旋轉且近接頭 ^生方式移動’如此近翻可處理晶_有的部分 :7ΐίϊΐ可顧之實關巾，晶®無法 能夠處理晶圓所有部份之方式在晶圓上方移動。^接 ifrn近接頭與晶_理系統可_於清潔並乾燥任何形狀 j疋’―流體f液面可以近接頭支撐並移動(例如：在 1、 攸晶圓移開與越過晶圓）。 圖2A顯示一依照本發明一實施例之晶圓處理系、统觸。此系 ϋ〇〇包括如此處所討論可產生-流體彎、液面之近接頭娜&盥 H實施例中，近接頭_在晶圓上方極接近晶圓處； i接頭106b在晶圓下方極接近晶圓處。亦須注意只要近接頭 動至極接近晶圓以產生並控制-彎液面，則系統廳可以任 當的方式配置。減了解只要可雜持—f液面，所謂極接近可 以疋任何始於晶圓之適當距離。在一實施例中，近接頭1〇如與 9 1262554 ι=(如同此處描述之任何其他的近接頭)可各自設置在始於晶圓 O.lmm至10mm間的距離以在晶圓表面上產生流體彎液 面二在-較佳實施例中，近接頭驗與_(如同此處描述之任 他的近接頭)可各自設置在始於晶圓且介於〇.5麵至4.5mm ί 在晶®表面上產生流體彎液面；且在—更佳的實施例 ，與祕(如同此處描述之任何其他的近接頭)可設 、⑽tirr系統卿、近接頭1G6a與議可由二處理 =i t 的部分。須注意近接頭腿與腿可以 月與職之移動如所要求的去處理晶圓之任何 °應了解雖然晶圓處理系統100係、顯示設有近接 頭106a與獅’但吾人可利用任何適當數量炫接頭，例如卜 106b SLY固ίί頭。晶圓處理系統1〇0之近接頭106a與/或 Z-f ίΐ/ 小或形狀’例如此處所示及描述之任何 Ϊ接處述之不同配置在近接頭與晶圓間產生—流體彎液 面。、左由施加流體至晶圓表面及由晶圓表面移除流體，％ 面可以移動遍及整個晶圓以處理該晶圓。在此種方^中二取= 所用之流體，可完成清潔、乾燥、侧與/或電㉟ = 此外’除了處理晶圓之上與/或下表面之外， 不同型式之流體或經由使用不同配置之面，亦可配^ ^出 使用相同型式或不同型式的程輸理摩另;卜-侧並 „或底面，亦可配置近接頭以處 :y ^下2完成：移動彎液面離開晶圓邊緣或3猎由 處理斜邊。吾人亦應了解近接頭106a盘 兔接上，以 備或不同型式的近接頭。 一 了為同铋型式的設 1262554 近接ΪΤτϋ的晶圓處理操作過程中，晶圓未處理的部分可經由 接頭106 之線性移動和經由晶圓108之旋轉出現在近 頭每彳-ara、 6刖。晶圓處理操作過程自身可經由至少一近接 108 區域。在另一每動由曰曰® 108之中央區域展開至邊緣 曰n 貝f中，㊣近接頭10如與106b由晶圓108之圓 d Ξ之^移動時，晶圓108已處理的部分會以螺旋運 動由曰曰® ϋ之邊緣區域展開至晶圓1G8之中央區域。 i〇6bi^ni理操作過程中，應了解可配置近接頭106a與 與;敍刻、與/或電鑛晶®娜。在一示範的乾燥 W配置至少—個第—人口以輸人去離子水(DIW)(亦稱 入口）’可配置至少一個第二入口以輸含 異丙醇_之氮氣㈣載體氣體(亦稱作IPA人‘ 實施真空以移除在晶圓與—特定的近接頭間之流體 、冉一二出口）。須注意雖然1PA蒸氣被使用在一些示範的實施 上1„其麵式的可與水聽之魏，修：氮氣、 任何> 虽的醇瘵氣、有，機化合物、揮發性化學物質等。須注咅任 ΐΪΐϊ醇可為任何適當的具有—絲依附於—飽和碳原子^碳 基礎化學物質。 在一示範的清潔實施例中，諸如SC4、SC-2等之清潔溶液可 代替fIW。此外，取決於所要求之處理操作過程，可輸又其他型 式的溶液至第一入口與第二入口。 須>主意只要可利用一如此處所述之穩定的彎液面，設置於近 接頭表面之入口與出口可為任何適當的配置。在一實施例中，至 少，個N2/IPA蒸氣人Π可與至少—個真空出σ相鄰，、而此真空出 口轉而與至少一個處理流體入口相鄰以形成一 ΙΡΑ _真空_處理流體 方向。須注意取決於所要求的晶圓處理與企圖增強何種型式之晶 圓處理機制，可利用其他型式的方向，如：ΙΡΑ_處理流體_真空、 處理流體-真空-ΙΡΑ、真空_ΙΡΑ_處理流體等。在另一實施例中，可 11 1262554 理流體之方向聰日纽有效地產生、㈣與移動位 晶圓_彎液面以處理晶圓。如果保持上述的2 安排。舉例來說，除了 Ν ρ :、：、工* : 了贿何適·的方式 口外，在一額外的洛乳入口、真空出口與處理流體入 有一組額外的IPA c，ί決於所要求之近接頭配置，可能 意確切的队直體人口與/或真” 口。須注 例來說，IPA/r$j方向配置會隨應用情形而不同。舉 離前後-致^雜二處理流體輸入位置間的距離可變化為距 r ί隨著近接頭i〇6a的尺寸、形狀與;置= 外2啊亦即’彎液面的形狀與大小)而不同。此 向。、 ν的彳田述中，可發現示範的ΙΡΑ-真空-處理流體方 卿ί Γί施例中’分別放置近接頭106a與106b於極接近晶圓 下表面，且利用1PA與㈣入口及真空二^ 理曰π _接觸之晶圓處輯液面，此晶®處理彎液面能夠處 描ΐΐ生。在面ί下ai=:該晶圓處理，彎液面可根據此處的 圓表面；間輸入IPA與處理流體，在極接近晶 ί工以移除1PA ·氣、處理流體與/或在晶圓表面上 主思雖然1PA被利用於示範的實施例中，仍可利用任 酮：Ξ式之可與水互溶之蒸氣’例如：任何適當的醇蒸氣、 本、、醇、乙基乙一醇、有機化合物等。這些流體亦可稱作 ^力減低流體。在介於近接頭與晶額之區域的處理流體之 為彎液面。須注意如此處姻之名詞「輸出」可歸類於一 二；=圓108與一特定的近接頭間之流體的移除；而名詞「輸入」 可為w於，圓108與該特定近接頭間的區域之流體引入。 一在一實施例中，系統100更包括一可供給及移除流體予近接 f 106a與l〇6b之流體源分配器12〇。須注意流體源分配器12〇可 為任何適當的、可供給並以有機方式接受流體之設備，例如一歧 12 1262554 I。在一實施例中，流體源分配器12〇由流體源丨22接受流體。 源122可經由一流體源控制器124控制並控制，而流體源控 制裔124可為任何適當的、可控制流體輸入至近接頭106a與l〇6b 之硬體/軟體。近接頭106&與106b可產生可處理晶圓1〇8之 面 104 〇 处在一示範的晶圓處理操作過程中，晶圓108中可具有不同的、 =同蒸發速率之部分。舉例來說，流體15〇可累積在與具 曰車發迷率之晶圓1〇8之其他部分相較具有較慢蒸發速率之 L曰圓ι〇8之部分。當晶圓108之部分為疏水的(排斥水分子)時，較 =的，發速率會發生且因此導致一與親水的(吸水)晶圓簡之部 =目較之下較薄的流體薄膜。因此，當流體薄膜，例如水，較薄 妹少的水分子層由表面蒸發，而由於未受控制之基發 V致暴鉻的、受污染的乾燥區域。 …、 产實施例中’流體感測器112可檢測具有較薄 ΐΐίΐι 經由在原處之度量衡，可檢測具有不同流 上ί之ΐ同晶圓位置。須注意任何適當的、可檢測晶圓108 f 薄膜厚度之原處之度量衡方式皆可利用。如參照圖2Β之 檢測之具有不同蒸發速率之部分。實施^境:= 乂減少由曰曰圓表面之不同流體蒸發速率的問題。 討論，晶圓處理區域的環境(亦即，彎液面綱正在 ίίίϋ處理之晶圓區域之接近其周_大氣壓力)(亦作基板 ί理割的方法㈣並操作㈣储高财。此外， ^理曰日0之至可以控制並控制以保持室内的高喊。因此，經由 ^明地控制晶_麵域之環境赌持最理想的 =曰 同部之—實如狀具林赌發速率之不 ° t貫施例中，當接頭應(如圖2a所示） 朝£或180移動日守，區域18〇包括接近近接頭廳之流體⑼。流 13 1262554 體150包括一顯示蒸發與往返於部分152之水分子再同化作 部分I52。部分1S2目此可包括蒸發液體分子2〇〇與再同化液 子202。在-實施例中，該液體分子為水分子。區域18〇亦顯示= 圓108沒有流體150的、具有較斥水性之區域範圍，且因此在^ 有流體150的範圍前已先行乾燥。在沒有流體15〇的區域中，^ 發分子200抗衡再同化分子2〇2，.因此，晶圓1〇8的該 g 持乾燥。 、圖3既明依照本發明之一實施例，在晶圓處理操作過程期 f近接頭106。在-實施例中，近接頭應可產生一流體彎液面以 ，理晶圓108。在-乾燥操作過程之實施例中，近接頭觸包括可 为別輸入IPA/N2與去離子水(DIW)之入口 3〇2與3〇6。一出口 3〇4 可產生能夠由晶圓108之表面移除ipa/n2與mw(和任何其他 =08上之流體)之真空。在這樣一個示範的實施例中，近接頭觸 y處理晶圓1G8，因此可乾燥―濕區域27〇以產生—乾區域25〇。 々j子中’ 一區域272為一經由近接頭觸處理之剛新近乾燥 區域’且一區域274為晶圓108之表面尚未處理的一部分。。 邱域274可具有包含具有不同乾_率之晶圓表面 不同的乾燥速率由晶圓表面差異而產生，例如斥 k 例子中’不_乾燥速率可由在區域 理1間’施加至晶圓108之1ΡΑ7Ν2而產生。在這樣的處 =私巾’被施加至晶U 108之區域272的ΙΡΑ/Ν2可創造一在區 中發生較高蒸發速率之條件。經由控制晶κ刚正被處理 力之_ ’可控制幾乎所有晶圓應之區域的蒸 ，逮^因此，由於晶圓⑽之受控制的乾燥， 可染的部分。 圖4顯TF-依照本發明之一實施例之晶圓處理室3〇〇。室3〇〇 包括=於臂，之近接頭1〇6 ;臂衞為晶圓處理操作過程，例 、乾無等’可移動近接頭廳至極接近晶圓108處。近 接頭祕可產生能夠處理晶®應之一表面之f液面勝示範的 14 1262554 彎液面可經由此處更進一步討論之設備與方法產生以處理晶圓 108 〇 在一實施例中，晶圓處理室300包括一可供給大體上已淨化 之大氣給室300之高效率粒子空氣(HEPA)濾器。在一實施例中， HEPA濾器302可經由輸入310淨化供給之空氣。在另一實施例 ^ ’ HEPA濾器302可淨化任何適當型式的大氣，例如：IpA/N2、 氬(&)、$、氧(〇2)、〇2 /N2、氦(He)、氖(Ne)、氙(Xe)等。須注意 名詞「大氣」可為任何適當的、可運送所要求的相對渥度量之氣 體。室300亦可包括可提供依據有受控制的溼度之大氣之輸入 306:在一實施例中，輸入3〇6可供給具有足夠高的相對溼度層級 之氣體以減少由晶圓1〇8之蒸發。須注意任何適當型式的惰性氣 體或瘵氣可利用為一運送高的相對溼度層級之載體氣體，例如： A/N2 N2、工氣(CDA)、Ar、〇2 /N2、〇2等。在另一實施例中， I以具有介於10%到約100%相對溼度之大氣，例如：空氣，供給 室300。、在一較佳實施例中，供給予室3〇〇之大氣可具有大於 ，相對溼度。因此，在一實施例中，一室3〇〇之受控制的環境 =包括一具有高層級之相對溼度之大氣與經由近接頭106產生之 二^，⑽日肢有效地親控制晶®表社蒸絲控制晶圓 慝理刼作過程。 每 >圖5顯示一依照本發明之一實施例之晶圓處理環境400。在一 =例中’ ^圓處理環境4GG包括-包目其相對溼度已受控制之 二15 4。4，俾於一實施例中，在該區域中的大氣具有高 墓二又ΐί。在一較佳實施例中，大氣可包含足夠溼氣，如此， ^ 大乳中的液體分子(例如··水分子)等同或少於由晶圓表面 上被同化回到液體中的液體分子。 相斜ί痒只中，可通過近接頭106之入口 402，施加一具有高 3可=適Λ的氣體產生控制範圍綱。在另—實施例中，入口 ΙΡΑ/Ν保持—特定的水中液體在某—濃度，例如： 2、-同、任何適當型式的醇等，包括共沸混合物。應了解 15 1262554 雖然在示範的實施例中討論IPA，其他型式 的' 包含碳與羥基之化學化合物。一共沸比率HJJ: 化學組成比率與來自^液體混合物之蒸氣之化學組成H 同。如此處所述，具有高相對溼度的氣體與可保持一特 J體:IPA)之某一濃度之蒸氣/氣體可稱作一環境二二中 ，1麗2蒸氣可通過入口401施加至晶圓表面之水 物:這樣可聰明並有效地減少晶圓表面不需要的峰 例中，入π搬可位在近接頭廳之前緣上且可施加 = 渥度之氣體到晶圓刚。當高相_度的氣體施加到“S3 31，蒸發速率降低從而減少不需要的晶圓乾燥。近=106 t緣t區域，在此區域近接頭遭遇未處理之日日日圓表面，如在 二内具f流體278之晶圓表面。須注意具有高層級相 對滢度之氣體可經由任何適當的設備，由任何適當的位置，以 何方式施加在控制範圍或接近控制範圍處。因此，入口 402 口 a 一可施加受控制的氣體以減少晶圓表面之流體蒸發之示範的g 例。以此方式，在特定區域開始晶圓處理前，晶圓區域概 保持在一受控制的蒸發狀態。 ^此外，在：實施例中，可以通過改變具有高層級之相對渔度 之氣體流虿或經由施加可保持一特定水中液體(例如·· IPA)在某一 濃度之氣體，包括共沸混合物，來控制在受控包層中的相對溼度。 在此類的實施财，可增加具有高相賴度之氣_流量從^增 加控制範圍404中的總液位。須注意任何可產生所要求之在晶圓 表面上的流體的蒸發速率程度之適當型式的氣體能夠被利用。在 一實施例中，當使用一具有高相對溼度的氣體，一高於5〇%之相 對溼度可以利用來控制晶圓處理環境以減少不需要的乾焊 晶圓上的污染程度。在另-實施例中，氣體的相賴度可藉於9〇% 至100%之間’且在一較佳的實施例中，使用具有相對溼度約1〇〇% 16 1262554 之氣體。 圖6說明一依照本發明之一實施例之晶圓處理環境4〇〇，。曰 L處理日環^術在—實施例中大體上包括所有的晶圓處理i曰 3〇〇。曰曰圓^理環境400,可經由輸入來自一晶圓處理環境產生器 500之具有咼相對屋度之氣體而產生。在另一晶圓處理環境產生器 5〇〇之實施例中，可輸入可保持一特定的水中液體在某一濃度之£ 體至晶圓處理環境400,中。在一特定的實施例中，可保持^水中 ^ IPA之一特定的濃度包含共沸濃度。須注意晶圓處理環境產生 态=〇可為任何適當的、能輸入氣體且能控制與控制在室3〇〇中 之流體蒸發速率之設備。應了解可利用任何適當的、 .級2對渔度之氣體，例如：清潔乾燥的空層 在一 ^施例中，晶圓處理環境產生器500可輸入一可具有由5〇% 相對溼度至約100%相對溼度之氣體。在另一實施例中，相對溼度 ^於約90%至、約100%，而較佳地是該氣體可具有約1〇〇%相^ 度。 在貝施例中’晶圓處理壤境產生器500為一至少部分填滿 流體504之起泡器502。須注意流體5〇4可為任何適當的液體或液 體的組合，當氣體通過流體5〇4時，該液體或液體組合可產生一 高相對溼度之氣體/蒸氣。在一實施例中，一輸入5〇6，例如： % =子，可施加一氣體508至流體504。須注意流體504可為任何 適當型式的液體，此液體可選擇性地包括任何適當的混合物，包 括共沸混合物，例如：DIW與氯化氫(HC1)、DIW與氫氟酸(HF)、 DIW與IPA等。在一實施例中，該液體可為DIW，而在另一實施 例中，液體504可為DIW與液態IPA。還有一個實施例中，液體 尸4 了為IPA。氣體508可通過液體504然後發出氣泡成為一可為 氣體或具有高相對溼度氣體之蒸氣510。在一實施例中，在發出氣 泡的過程期間，經由使氣體5〇8接觸到液體5〇4可使氣體5〇8充 滿，相對溼度之内容物以產生蒸氣51〇。然後，蒸氣51〇可以輸入 至室300中以產生晶圓處理環境400,。氣體508 —經輸入至室300 1262554 中的A氣溼度層級，從而降低在室300中 之I的』此’由彎液面104處理中之位於晶圓108 108之Γϋ有一低療發速率。換個方式來說，控制位於晶圓 膜之產減少在晶圓108之未處理部份中流體薄 H曰=;發進入大氣中的流體分子量大體上與碰撞晶圓表 =雜4表©之流體分子量鱗，從而減料需要的蒸發/乾 rC意ΐ此處描述之—實_中，其他例如朋溫度、大氣 t，座巧件可影響晶圓表面之流體之蒸發損耗的程度。因 产ιϋί二不同型式的大氣條件來說，需要不同等級的渔 又達到不^要的晶圓表面之流體蒸發損耗之受控制的減少。 沾曰具有可產生—流體彎液面之示範的近接頭之示範 任處&述之本發明之實施例可使用具有 统可、田&纽可產生液面之近接頭之任何適當型式的系 圖7顯示一依照本發明之一實施例之晶圓處理系統ιι〇〇。須 注思可使躲何適當的保持或移動晶圓之方法，例如：滾輪、插 U筒等。系統1100可包缝簡錢轉晶圓以使晶圓表面能 夠被處理之滾輪ll〇2a、1職、與聰c。系統·亦可包括在 一實施例中’能分別附加於上臂1104a與下臂11〇4b2近接頭1〇如 與勵。上臂ll〇4a與下臂1104b可為一能夠使近接职與嶋 大體上沿^著一晶圓半徑線性移動之近接頭載體組件11〇4之一部 刀在只施例中’可配置近接頭載體組件η〇4以保持近接頭1 〇如 在晶圓之上且近接頭l〇6b在晶圓之下之極接近晶圓處。此可經由 使上臂1104a與下臂ll〇4b以垂直方式移動來完成；所以，一旦 近接頭水平移動進入一位置以開始晶圓處理時，可垂直移動近接 頭、l〇6a與l〇6b至一極接近晶圓之位置。在另一實施例中，可在 兩近接頭104a與104b間形成流體彎液面並移動至晶圓的上與下 18 1262554 可以任何適當的方法配置上臂蘭& Ϊ = 動要近^^^咖使此處描述之晶_能夠實行。 圓矣Ιΐ要Z動接碩至極接近晶圓處以產生並控制一位於晶 在^ 面’近接頭系統1100可以任何適當的方法配置。 t另:不賴實施例中，近接頭廳可設置於-環繞—由該臂之 轉之f的第—端。因此，树樣的實施例中’ 姓入2在日日®表面上移動近接頭。還有另外一實施例中，可以 口 ^運動和線性運動來移動該臂。雖然在 頭觸，對晶圓之單一邊仍可使用一單一頭。二使 ^ 之邊上執行其他的表面表面製備過程，例如：晶圓 遍ΐίΓ魏例巾’ ·、統謂可包括—近婉塢站，該近接頭 Ϊ頭ΐ單—臂要求一只有—邊被處理，可_具有單一近 之-依5本發日i之—實施例執行晶圓處理操作過程 ϋ接士頭祕。在-實施例中，當位於極接近晶圓⑽之上表面 a處k，近接碩1〇6移動以實施晶圓處理操作 產t^^r8之流體型式，經由近接頭1〇6在晶圓表面= =之机體·讀面綱可為任何適當的晶圓處理操作過程 . ίί,ιί□ ；οί? ' T '° 106 f曰曰囫108之下表面108b。在一實施例中，晶圓1〇8可旋 此备流體彎液面處理上表面108a時，可移動近接頭1〇6。在 二實施例中’當近接頭撕在晶圓表面產生流體f液面時 湖可保持靜止不動。然後，近接頭可在晶圓表面上移動或掃描^ 因此沿者晶圓表面移動流體彎液面。還有一個實施例，製造 大的近接頭106㈣使流體彎液面包圍整個晶圓之表面區域 這樣的實施例中，經由施加流體彎液面至晶圓表面，可在不移動 19 1262554 近接頭的情況下處理整個晶圓表面。 在一實施例中，近接頭1〇6包括源入口 1302與1306及源出 口 1304。在這樣的實施例中，在氮氣體ipa/N2中之異丙醇蒸氣131〇 可通過一源入口 1302施加至晶圓表面，真空1312可通過一源出 口 1304施加至晶圓表面，且一處理流體1314可通過一源入口 13〇6 施加至晶圓表面。 在一實施例中，除了施加真空1312以由晶圓表面i〇8a移除 處理流體1314與IPA/N21310外，ipa/N21310與處理流體之施加 能產生流體彎液面104。流體彎液面1〇4可為一在近接頭1〇6與晶 ，表面間定義之流體層，且能夠以一穩定並受控制的方法穿過晶 圓表面108a而移動。在一實施例中，流體彎液面1〇4可經由不停 的施加並移除處理流體1314而定義。定義流體彎液面1〇4之流體 層可為任何適當的形狀與/或大小，取決於源入口 、源出口 1304與源入口 1302之大小、數量 '形狀、與/或型樣。 ，此外’取決於要求產生的流體彎液面之型式，可以使用任何 適當的真空、IPA/N2真空 '與處理流體之流量。還有一個實施例， ，決於介於近接頭1〇6與晶圓表面間的距離，當產生並利用流體 彎，面104時，可省略IPA/N2。在這樣的實施例中，近接頭1〇6 了月b不包括1302 ’且因此只有經由源入口 1306施加處理流體1314 與經由源出口 1304移除處理流體1314來產生流體彎液面1〇4。 、在另一近接頭106之實施例中，近接頭1〇6之處理表面(設置 源入口與源出口之近接頭區)取決於要產生的彎液面之配置，可具 有任何適當的地形。在一實施例中，近接頭之處理表面可為鋸^ 狀或突出於周圍的表面。 圖8B顯示依照本發明之一實施例之一近接頭1〇6之部分俯視 圖。須注意如參照圖8B所述之近接頭106之配置係示範性質。因 ，，只要處理流體能被施加至一晶圓表面並由晶圓表面蒋 ^晶圓表面上產生-穩定的越彎液面，則可其他近接頭配 以產生流體彎液面。此外，如上面所討論的，當配置近接頭1〇6 20 1262554 在不使用IVIPA的情況下產生流體f液 實施例不具有源入口 1302。 τ 〃他近接頭106的 在-實施例之俯視圖中，由左至右為—組源入口 13〇2、一祖 源出口 1304、一組源入口·、一組源出口 盘 口. Portion 20 attracts water and accumulates fluid 26' in that region with a portion A^, so that region repels water and thus can be on that portion of wafer ω: l〇 = more. & can not be - Calender K dry, and thus reduce wafer production yield. The Japanese knives are required by a method and apparatus that can be achieved by reducing the optimal fluid control of the contaminated deposits on the crystal table f and applying it to a wafer. First, the drawbacks of technology. Such deposits, which often occur today, reduce the yield of splicing and increase the cost of manufacturing semiconductor wafers. φ SUMMARY OF THE INVENTION Broadly speaking, the present invention satisfies these needs by providing a substrate processing apparatus that is capable of removing fluids on a wafer surface while reducing wafer contamination in an efficient manner. It should be noted that the invention can be implemented in numerous ways, including a process, a device, a system, an element or a method. Several embodiments of the invention of the invention are described below. In one embodiment, a method of processing a substrate is provided that includes creating a first-class body meniscus to process the substrate and applying the fluid meniscus to a surface of the substrate. The method further includes reducing evaporation of fluid from a surface in the substrate processing environment. In another embodiment, a method of processing a substrate is provided that includes producing a first level liquid level to treat a silk sheet and applying the fluid meniscus to a surface of the substrate. In addition, the apparatus for providing a substrate is provided, which comprises a device capable of processing a bow/night surface to handle a substrate and a configuration for storing the k-joint. ___Environmental control of the body for the room. In the application of the substrate, the apparatus for providing a substrate for processing includes a substrate capable of producing a liquid (four) treatment-substrate surface and a conduit disposed on the proximal surface to apply an environmental control gas to the vicinity The advantages of the connector are good. The most systematically, the equipment described in this issue is processed in a fish-like manner (for example, those that require Zhao to apply and ^ =: dry, etc.) semiconductor wafers, while reducing the residue on the wafer table: Sii dyeing. Therefore, wafer processing and production can be increased and high wafer yield can be achieved due to effective rounding. The generation and use of the ancient meniscus and the clever control of wafer processing from the wafer domain. In particular, it is possible to control the ΪΪ3Γ2 mesh to the humidity level at the wafer 'so, for example, the atmosphere is relatively wet; when the relative processing level of the wafer processing area is high, the: 01 01 body therapy is south-controllable . The entire wafer processing chamber can be I-right?: Area 5ΐ: ί Relative level atmosphere. In addition, the fluid around the wafer is steamed ====Mussian_County from the wafer. [Embodiment] The method of shaking the substrate and the invention of the substrate. In the following description, a is a thorough understanding of the present invention and numerous specific details are set forth. ^中^ 8 1262554 Under certain details, it will be possible to solve the present invention without these, and it is still practicable. In other examples, the process is not described in detail. (4) The necessary confusion of Lin's handling of the operations of the public. The description of the exemplary embodiment of the wafer processing system. Specifically, in the embodiment below, the proximal joint can be moved from one edge of the wafer to the other position: == crystal = #, the other non-linear chicken, for example, the diameter To the movement, off the movement, the snail movement and so on. The sport can also be suitable for any user request. Externally, in one embodiment, the wafer is rotatable and the proximal joint is moved in a manner that is so close to handle the crystal. _There are: 7ΐίϊΐ can be used to treat the towel, Crystal® cannot handle all parts of the wafer. The way moves over the wafer. ^ Ifrn near joint and crystal system can be used to clean and dry any shape j疋' - fluid f level can be supported and moved near the joint (for example: at 1, the wafer is removed and crossed the wafer). 2A shows a wafer processing system and system in accordance with an embodiment of the present invention. The system includes a fluid-to-fluid, liquid-to-surface joint, as described herein, in the embodiment, the proximal joint _ is in close proximity to the wafer above the wafer; the i-joint 106b is at the bottom of the wafer Close to the wafer. It should also be noted that the system hall can be configured in any way as long as the proximal joint moves very close to the wafer to create and control the meniscus. Less understanding can be done as long as it can be mixed with the liquid surface. The so-called extremely close can be any suitable distance from the wafer. In an embodiment, the proximal joint 1 such as 9 1 262 554 ι = (as with any other proximal joint described herein) may each be disposed at a distance from the wafer of 0.1 mm to 10 mm on the wafer surface. Generating a fluid meniscus 2 In a preferred embodiment, the proximal joint test and _ (as with any of the proximal joints described herein) can each be set at the beginning of the wafer and between 〇.5 faces to 4.5 mm ί Producing a fluid meniscus on the surface of the Crystal®; and in a preferred embodiment, the secret (as with any other proximal joint described herein) can be set, (10) the tirr system, the proximal joint 1G6a, and the two can be treated = The part of it. It should be noted that the proximal joint legs and legs can be moved monthly or as required to process any of the wafers. It should be understood that although the wafer processing system 100 is shown, it is provided with a proximal joint 106a and a lion' but we can use any suitable amount. Hyun joints, such as Bu 106b SLY solid ίί head. The wafer processing system 1 〇0 proximal joint 106a and/or Zf ΐ ΐ 小 小 小 小 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 例如 流体 流体 流体 流体 流体 流体 流体. Left, by applying fluid to the surface of the wafer and removing fluid from the surface of the wafer, the % face can be moved throughout the wafer to process the wafer. In this case, the fluid used can be cleaned, dried, side and/or electrically 35 = In addition, different types of fluids may be used or different depending on the top and/or lower surface of the wafer. The surface of the configuration can also be equipped with the same type or different types of the process to transport the other; Bu-side and „ or the bottom surface, can also be configured with the near joint: y ^ 2 completed: moving the meniscus to leave The edge of the wafer or the 3 hunting is processed by the bevel. We should also understand that the proximal connector 106a is connected to the different types of the proximal connector. The same is the same type of setting 1262554 in the vicinity of the wafer processing operation The unprocessed portion of the wafer can be present in the near-head-ara, 6刖 via linear movement of the joint 106 and rotation through the wafer 108. The wafer processing operation itself can be via at least one proximity 108 region. Each movement is unfolded from the central region of the 曰曰® 108 to the edge 贝n f, and when the proximal joint 10 is moved from the circle d of the wafer 108 by 106b, the processed portion of the wafer 108 is spirally moved. Expanded from the edge area of 曰曰® 至 to wafer 1G8 The central area. During the operation, it should be understood that the configurable proximal joints 106a and; the etched, and/or the electric mineral crystals. In an exemplary dry W configuration at least one - population to lose Human deionized water (DIW) (also known as inlet) can be configured with at least one second inlet to deliver isopropanol - nitrogen (four) carrier gas (also known as IPA person's vacuum to remove wafers and - specific The fluid between the joints, the first and second outlets.) It should be noted that although the 1PA vapor is used in some demonstrations, the surface can be used with water, repair: nitrogen, any > Gas, organic, organic compounds, volatile chemicals, etc. The sterol may be any suitable basic chemical having a silk attached to a saturated carbon atom. In an exemplary cleaning embodiment, a cleaning solution such as SC4, SC-2 or the like may be substituted for fIW. In addition, other types of solutions can be delivered to the first inlet and the second inlet depending on the desired processing operation. The > idea can be any suitable configuration for the inlet and outlet of the proximal surface as long as a stable meniscus as described herein can be utilized. In one embodiment, at least one N2/IPA vapor enthalpy may be adjacent to at least one vacuum sigma, and the vacuum outlet is in turn adjacent to at least one processing fluid inlet to form a _ _ vacuum _ treatment fluid direction. It should be noted that depending on the required wafer processing and what type of wafer processing mechanism is being attempted, other types of directions can be utilized, such as: ΙΡΑ_treatment fluid_vacuum, treatment fluid-vacuum-ΙΡΑ, vacuum_ΙΡΑ_treatment Fluid, etc. In another embodiment, the direction of the fluid can be effectively generated, (4) and moved to the wafer _ meniscus to process the wafer. If you keep the above 2 arrangements. For example, in addition to Ν ρ :, :, 工* : the way to pay a bribe, the extra milk inlet, the vacuum outlet and the treatment fluid have an additional set of IPA c, depending on the requirements. Near-joint configuration, may mean the exact team population and/or true port. For example, the IPA/r$j direction configuration will vary depending on the application. Before and after - the two processing fluid input The distance between the positions can be changed to be the distance r ί with the size and shape of the proximal joint i〇6a; the setting = outer 2, that is, the shape and size of the meniscus. This direction, ν 彳田述中It can be found that the exemplary ΙΡΑ-vacuum-treatment fluid Fang Qing ί Γ 施 'in the example, respectively, the proximal joints 106a and 106b are placed in close proximity to the lower surface of the wafer, and the use of 1PA and (4) inlet and vacuum ^ π _ contact At the wafer, the liquid level can be traced. The surface is treated with ai=: the wafer is processed, the meniscus can be based on the round surface here; the IPA and the treatment fluid are input. In close proximity to the crystal to remove 1PA · gas, process fluid and / or on the surface of the wafer, although 1PA In the exemplary embodiments, any ketone can be utilized: a water-miscible vapor that can be miscible with water, such as any suitable alcohol vapor, hydrazine, alcohol, ethyl ethoxylate, organic compound, etc. These fluids can also be used. It is called the force reduction fluid. The treatment fluid in the area between the near joint and the crystal grain is the meniscus. It should be noted that the term "output" as used herein can be classified as one or two; = circle 108 and a specific The removal of fluid between the joints; and the term "input" may be the introduction of fluid into the region between the circle 108 and the particular proximal joint. In one embodiment, system 100 further includes a fluid source distributor 12 that can supply and remove fluid to proximity f 106a and 106b. It should be noted that the fluid source dispenser 12A can be any suitable device that can supply and accept fluids in an organic manner, such as a manifold 12 1262554 I. In an embodiment, the fluid source dispenser 12 is receiving fluid from the fluid source port 22. Source 122 can be controlled and controlled via a fluid source controller 124, and fluid source controller 124 can be any suitable, controllable fluid input to the hardware/software of proximal connectors 106a and 106b. The proximal joints 106 & and 106b can produce a face for processing the wafer 1 104 104 在一 During an exemplary wafer processing operation, the wafer 108 can have different, = same evaporation rate portions. For example, the fluid 15 〇 can accumulate in the portion of the L 曰 circle 〇 8 having a slower evaporation rate than the other portions of the wafer 1 〇 8 having the rickshaw rate. When a portion of the wafer 108 is hydrophobic (rejecting water molecules), the rate of occurrence will occur and thus result in a thinner fluid film than the hydrophilic (absorbent) wafer. Thus, when a fluid film, such as water, a thinner layer of water molecules evaporates from the surface, the uncontaminated base V violently contaminates the contaminated dry area. In the embodiment, the fluid sensor 112 can detect that there is a thinner 度量ίΐι, which can detect the same wafer position on different streams via the weight measurement in the original. It should be noted that any suitable weight-measurement method for detecting the thickness of the wafer 108 f film thickness can be utilized. The portions having different evaporation rates as detected with reference to Fig. 2A. Implementation: = 乂 Reduces the problem of different fluid evaporation rates due to the rounded surface. Discuss, the environment of the wafer processing area (that is, the area of the wafer that is being processed by the meniscus is close to its weekly_atmospheric pressure) (also used as the method of substrate cutting (4) and operation (4) to save high wealth. In addition, The next day can be controlled and controlled to keep the room shouting. Therefore, the environment that controls the crystal_area is the most ideal = the same as the same - the actual gambling rate is not In the example, when the joint should (as shown in Figure 2a) move toward £ or 180, the area 18〇 includes the fluid close to the joint chamber (9). Flow 13 1262554 Body 150 includes a display of evaporation and round-trip The water molecules of 152 are re-synthesized as part I52. Part 1S2 may include evaporating liquid molecules 2〇〇 and re-synthesis liquid 202. In the embodiment, the liquid molecules are water molecules. Region 18〇 also shows = circle 108 There is no range of regions of fluid 150 that are more water repellent, and therefore have been dried prior to the range of fluid 150. In the absence of fluid 15 ,, the molecule 200 counteracts the reassimilation of the molecule 2〇2. The g of the wafer 1〇8 is dry. Figure 3 shows In accordance with an embodiment of the present invention, the wafer 106 is near the joint 106 during the wafer processing operation. In the embodiment, the proximal joint should produce a fluid meniscus to process the wafer 108. The implementation of the in-dry operation In the example, the proximal contact includes an inlet 3〇2 and 3〇6 for inputting IPA/N2 and deionized water (DIW). An outlet 3〇4 can generate ipa/n2 that can be removed from the surface of the wafer 108. With a vacuum of mw (and any other fluid at = 08). In such an exemplary embodiment, the proximal contact y processes the wafer 1G8 so that the "wet region 27" can be dried to create a dry region 25". In the j, a region 272 is a newly dried region treated by a proximity contact and a region 274 is a portion of the surface of the wafer 108 that has not been processed. The Qiu domain 274 can have wafers having different dry talities. The different drying rates of the surface are caused by the difference in the surface of the wafer. For example, in the example of k, the 'no drying rate can be generated by applying 1 to 7 in the area 1' to the wafer 108. In this case, the private towel is applied. ΙΡΑ/Ν2 in the region 272 of the crystal U 108 can create a The condition of higher evaporation rate. By controlling the crystal κ just being processed, the force can be controlled to control the evaporation of almost all areas of the wafer, so that due to the controlled drying of the wafer (10), the dyeable part. 4 display TF - wafer processing chamber 3 according to an embodiment of the present invention. Room 3 〇〇 includes = in the arm, the proximal joint 1 〇 6; arm guard is the wafer processing operation process, example, dry, etc. 'The movable proximal joint chamber is located very close to the wafer 108. The near joint is capable of producing a 14 1262554 meniscus that can handle the surface of one of the crystals. It can be produced by the equipment and methods discussed further herein. To process the wafer 108. In one embodiment, the wafer processing chamber 300 includes a high efficiency particle air (HEPA) filter that supplies a substantially purified atmosphere to the chamber 300. In an embodiment, HEPA filter 302 may purify the supplied air via input 310. In another embodiment, the HEPA filter 302 can purify any suitable type of atmosphere, such as: IpA/N2, argon (&), $, oxygen (〇2), 〇2/N2, 氦(He), 氖( Ne), 氙 (Xe), etc. It should be noted that the term "atmosphere" can be any suitable gas that can carry the required relative enthalpy. Chamber 300 can also include an input 306 that provides an atmosphere according to controlled humidity: in one embodiment, input 3〇6 can supply a gas having a sufficiently high relative humidity level to reduce evaporation from wafer 1〇8. . It should be noted that any suitable type of inert gas or helium may be utilized as a carrier gas for transporting a high relative humidity level, such as: A/N2 N2, process gas (CDA), Ar, 〇2/N2, 〇2, and the like. In another embodiment, I is supplied to chamber 300 in an atmosphere having a relative humidity of from 10% to about 100%, such as air. In a preferred embodiment, the atmosphere for the chamber 3 can have a greater than, relative humidity. Thus, in one embodiment, a controlled environment of one chamber 3 includes an atmosphere having a relative humidity of a higher level and a second generated by the proximal joint 106. (10) The prosthetic effective control crystal table The steaming wire controls the wafer processing process. Each > Figure 5 shows a wafer processing environment 400 in accordance with an embodiment of the present invention. In a = example, the 'circle processing environment 4GG includes - the second aspect of which the relative humidity has been controlled. In an embodiment, the atmosphere in the area has a high tomb. In a preferred embodiment, the atmosphere may contain sufficient moisture such that liquid molecules (e.g., water molecules) in the large emulsion are equal or less than liquid molecules that are assimilated back into the liquid on the surface of the wafer. In the case of the phase slanting, the control range of the gas having a height of 3 can be applied through the inlet 402 of the proximal joint 106. In another embodiment, the inlet Ν/Ν remains—the particular liquid in the water at a concentration, such as: 2, - the same, any suitable type of alcohol, etc., including the azeotrope. It should be appreciated that 15 1262554 although IPA is discussed in the exemplary embodiment, other versions of 'chemical compounds containing carbon and hydroxyl groups. Azeotropic ratio HJJ: The chemical composition ratio is the same as the chemical composition H of the vapor from the liquid mixture. As described herein, a gas having a high relative humidity and a vapor/gas at a concentration that can maintain a specific J body: IPA can be referred to as an environment 22, and a vapor can be applied to the wafer through the inlet 401. Water on the surface: This is a smart and effective way to reduce unwanted peaks on the wafer surface. The π-transport can be placed on the front edge of the near-joint chamber and can apply a gas of = 到 to the wafer. When a high phase _ degree gas is applied to "S3 31, the evaporation rate is reduced to reduce unwanted wafer drying. Near = 106 t edge t region, where the proximal joint encounters an untreated day surface, as in the second The surface of the wafer with f fluid 278. It should be noted that the gas having the higher relative humidity can be applied to the control range or near the control range by any suitable device, from any suitable location. Thus, the inlet 402 Port a. An example of a method in which a controlled gas can be applied to reduce fluid evaporation on the surface of the wafer. In this manner, the wafer area remains in a controlled evaporation state before wafer processing begins in a particular area. In addition, in an embodiment, the gas flow having a relative degree of fish at a high level or by applying a gas at a certain concentration (for example, IPA) at a certain concentration, including an azeotrope, may be Controlling the relative humidity in the controlled cladding. In this type of implementation, it is possible to increase the total liquid level in the control range 404 from the gas with a high degree of correlation. A suitable type of gas that requires the degree of evaporation of the fluid on the surface of the wafer can be utilized. In one embodiment, when a gas having a high relative humidity is used, a relative humidity of more than 5% can be utilized. To control the wafer processing environment to reduce the degree of contamination on unwanted dry solder wafers. In other embodiments, the gas can be used between 9〇% and 100%' and in a preferred In the embodiment, a gas having a relative humidity of about 1〇〇% 16 1262554 is used. Figure 6 illustrates a wafer processing environment in accordance with an embodiment of the present invention. In general, all wafer processing operations are included. The circular environment 400 can be generated by inputting a gas having a relative housing degree from a wafer processing environment generator 500. In another crystal In an embodiment of the circular processing environment generator 5, a liquid can be input to maintain a particular concentration of liquid in a certain concentration to the wafer processing environment 400. In a particular embodiment, the water can be maintained. ^ One of the specific concentrations of IPA contains azeotropic concentration It should be noted that the wafer processing environment generation state = 〇 can be any suitable device capable of inputting gas and capable of controlling and controlling the evaporation rate of the fluid in the chamber 3. It should be understood that any suitable, level 2 pair of fish can be utilized. Gas, for example, a clean dry empty layer. In one embodiment, the wafer processing environment generator 500 can input a gas that can have a relative humidity of from about 5% relative humidity to about 100% relative humidity. In another embodiment The relative humidity is about 90% to about 100%, and preferably the gas may have about 1%. In the example, the wafer processing soil generator 500 is at least one. The bubbler 502 is partially filled with fluid 504. It should be noted that the fluid 5〇4 can be any suitable liquid or liquid combination that produces a high relative humidity gas when the gas passes through the fluid 5〇4. /Vapor. In one embodiment, an input of 5 〇 6, for example: % = sub, a gas 508 can be applied to the fluid 504. It is noted that fluid 504 can be any suitable type of liquid, which can optionally include any suitable mixture, including azeotropes such as: DIW and hydrogen chloride (HC1), DIW and hydrofluoric acid (HF), DIW and IPA. Wait. In one embodiment, the liquid can be DIW, while in another embodiment, the liquid 504 can be DIW and liquid IPA. In still another embodiment, the liquid corpse 4 is IPA. Gas 508 can pass through liquid 504 and then bubble out into a vapor 510 which can be a gas or a gas having a high relative humidity. In one embodiment, during the process of initiating the bubble, the gas 5〇8 is filled by contacting the gas 5〇8 with the liquid 5〇4, the contents of the relative humidity to produce a vapor 51〇. Vapor 51 can then be input into chamber 300 to create wafer processing environment 400. Gas 508 - is input to the A gas humidity level in chamber 300 1262554, thereby reducing the rate of I in chamber 300 by a low therapeutic rate of wafer 108 108 in the treatment of meniscus 104. Alternatively, controlling the production of the wafer film reduces the thinness of the fluid in the untreated portion of the wafer 108. The molecular weight of the fluid that enters the atmosphere is substantially the same as the fluid that hits the wafer. The molecular weight scale, and thus the evaporation/dry rC required for the reduction, is described herein as the extent to which other components such as the temperature of the occupant, the atmosphere t, can affect the evaporation loss of the fluid at the surface of the wafer. Due to the different atmospheric conditions of the ιϋί, different levels of fishing are required to achieve a controlled reduction in the evaporation loss of the wafer surface. An exemplary embodiment of the present invention having an exemplary joint that can produce a fluid meniscus can be used in any suitable version of the present invention having a proximal joint that can produce a liquid surface. Figure 7 shows a wafer processing system in accordance with an embodiment of the present invention. It is important to think about ways to keep or move the wafer properly, such as rollers, U-tubes, etc. The system 1100 can be used to sew the money to the wafer so that the surface of the wafer can be processed by the wheel 〇 2a, 1 position, and Cong C. The system can also be included in an embodiment that can be attached to the upper arm 1104a and the lower arm 11〇4b2, respectively. The upper arm 11a and the lower arm 1104b may be a proximal connector carrier 11〇4 capable of linearly moving the proximal and the traverse substantially along a wafer radius. In the example only, the configurable proximal connector The carrier assembly n〇4 maintains the proximity 1 such as above the wafer and the proximal tab 16b is located very close to the wafer below the wafer. This can be done by moving the upper arm 1104a and the lower arm 11〇4b in a vertical manner; therefore, once the proximal joint is moved horizontally into a position to begin wafer processing, the proximal joints, l〇6a and l〇6b can be moved vertically to One pole is close to the wafer. In another embodiment, a fluid meniscus can be formed between the two proximal joints 104a and 104b and moved to the upper and lower sides of the wafer. 18 1262554. Any suitable method can be used to configure the upper arm blue & Ϊ = moving closer ^^^ The coffee allows the crystals described herein to be implemented. The 矣Ιΐ 矣Ιΐ Z 动 接 至 至 至 至 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 近 近t: In the embodiment, the proximal joint hall can be placed on the -around - the first end of the f which is rotated by the arm. Thus, in the tree-like embodiment, the surname of 2 moves the proximal joint on the surface of the day. In still another embodiment, the arm can be moved by motion and linear motion. Although at the head touch, a single head can be used for a single side of the wafer. Second, the other surface surface preparation process is performed on the side of ^, for example, the wafer is ΐ Γ Γ 例 例 ' 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉 婉It can be processed, and it can be singularly close to - according to the 5th day of the present invention - the embodiment performs the wafer processing operation process. In the embodiment, when it is located very close to the surface a of the wafer (10), k is moved to the wafer processing operation to produce a fluid pattern of the wafer processing operation, via the near junction 1〇6 in the wafer. The surface = = body can be any suitable wafer processing operation. ίί, ιί□ ; οί? 'T '° 106 f曰曰囫 108 lower surface 108b. In one embodiment, the wafer 1 〇 8 can be rotated to prepare the upper surface 108a of the fluid meniscus to move the proximal joint 1 〇 6. In the second embodiment, the lake can remain stationary when the proximal joint tears the surface of the wafer to create a fluid f level. The proximal joint can then be moved or scanned over the surface of the wafer to move the fluid meniscus along the surface of the wafer. In still another embodiment, the embodiment in which the large proximal joint 106 (4) is formed such that the fluid meniscus surrounds the surface area of the entire wafer, by applying a fluid meniscus to the wafer surface, does not move the 19 1262554 proximal joint. The entire wafer surface is processed. In one embodiment, the proximal joint 1〇6 includes source inlets 1302 and 1306 and source outlet 1304. In such an embodiment, the isopropanol vapor 131〇 in the nitrogen gas ipa/N2 can be applied to the wafer surface through a source inlet 1302, and the vacuum 1312 can be applied to the wafer surface through a source outlet 1304, and a treatment Fluid 1314 can be applied to the wafer surface through a source inlet 13〇6. In one embodiment, in addition to applying vacuum 1312 to remove process fluid 1314 from IPA/N 21310 from wafer surface i 8a, application of ipa/N 21310 and process fluid can create fluid meniscus 104. The fluid meniscus 1〇4 can be a fluid layer defined between the proximal joint 1〇6 and the crystal, and can be moved through the crystal surface 108a in a stable and controlled manner. In an embodiment, the fluid meniscus 1 〇 4 can be defined by the constant application and removal of the treatment fluid 1314. The fluid layer defining the fluid meniscus 1 〇 4 can be of any suitable shape and/or size, depending on the source inlet, the source outlet 1304 and the source inlet 1302, the size, shape, and/or pattern. In addition, depending on the type of fluid meniscus required to be produced, any suitable vacuum, IPA/N2 vacuum' and flow rate of the treatment fluid may be used. In still another embodiment, depending on the distance between the proximal joint 1〇6 and the wafer surface, IPA/N2 may be omitted when the fluid bend, face 104 is created and utilized. In such an embodiment, the proximal joint 1〇6 does not include 1302' and thus only the treatment fluid 1314 is applied via the source inlet 1306 and the treatment fluid 1314 is removed via the source outlet 1304 to create the fluid meniscus 1〇4. In another embodiment of the proximal joint 106, the treated surface of the proximal joint 1〇6 (the proximal joint region where the source inlet and the source outlet are disposed) may have any suitable topography depending on the configuration of the meniscus to be produced. In an embodiment, the treated surface of the proximal joint may be saw-like or protrude from the surrounding surface. Figure 8B shows a partial plan view of a proximal joint 1〇6 in accordance with one embodiment of the present invention. It should be noted that the configuration of the proximal joint 106 as described with reference to Figure 8B is exemplary. Because, as long as the process fluid can be applied to a wafer surface and a stable liquid meniscus is created on the surface of the wafer, other proximal joints can be used to create a fluid meniscus. Moreover, as discussed above, the configuration of the proximal joint 1〇6 20 1262554 produces fluid f fluid without the use of IVIPA. The embodiment does not have a source inlet 1302. In the top view of the embodiment of the τ 〃 proximal connector 106, from left to right is a group source inlet 13 〇 2, a ancestral source outlet 1304, a set of source inlets, and a set of source exit ports.
1302^,b ^ Ftt N2/IPA 兵曰曰圓應之間的區域中’真空移除叫聰與處理化學物質及任 何流體溥膜與/或可能存在於晶圓108上之污染物。此處所述之源 入口 1302、源入口 1306與源出口 1304亦可為任何適當型式的幾 何’例如：圓形開口、三角開口、方形開口等。在一實施例中， 源入口 1302與1306及源出口 1304具有圓形開口。須注意近接頭 106可為任何適當的大小、形狀與/或配置，取決於要求要產生之 流體彎液面104之大小與形狀。在-實_巾，近接頭可延伸小 於晶圓半徑。在另-實施例中，近接頭可延伸大於晶圓半徑。在 另一實施例中，近接頭可延伸大於晶圓直徑。因此，流體彎液面 的大小可為任何適當的大小，取決於在任何已知的時間點上要求 要處理之晶圓表面區域的大小。此外，須注意取決於晶圓處理操 作過程，可以任何適當的方向放置近接頭106,例如：水平、垂直、 或任何其他適當並介於兩者之間的位置。近接頭1〇6亦可被包含 在一實施一或多種型式之晶圓處理操作過程之晶圓處理系統。 圖8C說明一依照本發明之一實施例之近接頭1〇6之入口/出 口型樣。在這個實施例中，近接頭106包括源入口 1302與1306 及源出口 1304。在一實施例中，源出口 1304可圍繞源入口 1306 且源入口 1302可圍繞源出口 1304。 圖8D說明另一依照本發明之一實施例之近接頭1〇6之入口/ 出口型樣。在這個實施例中，近接頭106包括源入口 1302與1306 及源出口 1304。在一實施例中，源出口 1304可圍繞源入口 1306 且源入口 1302可至少部分地圍繞源出口 1304。 圖8E說明一更進一步的依照本發明之一實施例之近接頭1〇6 之入口/出口型樣。在這個實施例中，近接頭106包括源入口 1302 21 1262554 口' 13〇6 1304 °在一實施例中，源出口 1304可圍繞源入 -實一貝施例中，近接頭106不包括源入口 1302，因為在 •f液^ 能夠在不施加IPA/N2的情況下產生；《 生—穩定i受ί的3^出口型樣為示範性質，且只要能夠產 可使用。徑的體号液面，任何適當型式的入口 /出口型樣皆 其夂插沾織几貝刖面之專利說明書與研究附圖後將了解 ^ '附加、、置換與等效設計。因此，本發明中欲包含 等效設ί明之真正精神與範_所有此綱變化、附加、置換與 【圖式簡單說明】 根據下列詳細的敘述附圖，將更容易了解本發 明，以相關參考數字麵相_構造元件。 為了方便 在晶雜齡—咖麟(㈣清洗絲)過程期間， 圖1B說明一示範的晶圓乾燥過程。 圖2A顯示一依照本發明之一實施例之晶圓處理 圖2B顯示依照本發明之一實施例之具有 同部分之區域。 Μ讀速率之不 圖3說明在晶圓處理操作過程期間，一依照 例之近接頭。 今％明之一實施 圖4顯示一依照本發明之一實施例之晶圓處理室。 圖5顯示一依Κ?、本發明之一實施例之晶圓處理環产 圖6說明一依照本發明之一實施例之晶圓處理‘二°。 圖7顯示一依照本發明之一實施例之晶圓清潔 圖8Α說明〆依照本發明之一實施例之一執行一系統。 程之近接頭。 ^燥操作過 22 1262554 圖8B顯示一依照本發明之一實施例之近接頭之部分俯視圖。 圖8C說明一依照本發明之一實施例之一近接頭之入口/出口 型樣。 圖8D說明另一依照本發明之一實施例之一近接頭之入口/出 口型樣。 圖8E說明一更進一步的依照本發明之一實施例之一近接頭 之入口/出口型樣。 【主要元件符號說明】 10〜晶圓 Φ 12〜液體/氣體介面 14〜旋轉 16〜流體方向箭頭 18〜晶圓乾燥過程 20〜(親水性)部分 22〜(斥水性)部分 26〜流體 100〜晶圓處理系統 104〜流體彎液面 m 105〜臂 106〜近接頭 106a〜近接頭 106b〜近接頭 108〜晶圓 - 108a〜晶圓108之上表面 . l〇8b〜晶圓108之下表面 112〜流體感測器 120〜流體源分配器 122〜流體源 23 1262554 124〜流體源控制器 150〜流體 152〜部分 180〜區域 200〜蒸發分子 202〜再同化分子 250〜乾區域 270〜濕區域 272〜區域 274〜區域 • 278〜流體 300〜晶圓處理室 302〜入口 304〜出〇 306〜入口 / 310〜輸入 400〜晶圓處理壞境 400’〜晶圓處理境 402〜入口 404〜控制範圍 _ 406〜晶圓區域 500〜晶圓處理環境產生器 502〜起泡器 504〜流體 506〜輸入 . 508〜氣體 510〜蒸氣 1100〜晶圓處理系統 1102a〜滾輪 1262554 1102b〜滾輪 1102c〜滾輪 1104〜近接頭載體組件 1104a〜上臂 1104b〜下臂 1302〜源入口 1304〜源出口 1306〜源入口 1310〜在氮氣體IPA/N2中之異丙醇蒸氣 1312〜真空 •1302^, b ^ Ftt N2/IPA The area between the forces should be vacuum removed to remove chemicals and any fluid film and/or contaminants that may be present on the wafer 108. The source inlet 1302, source inlet 1306, and source outlet 1304 described herein can also be any suitable type of geometry, such as circular openings, triangular openings, square openings, and the like. In an embodiment, source inlets 1302 and 1306 and source outlet 1304 have circular openings. It should be noted that the proximal joint 106 can be of any suitable size, shape and/or configuration, depending on the size and shape of the fluid meniscus 104 to be produced. In the - _ towel, the near connector can extend less than the wafer radius. In another embodiment, the proximal joint can extend greater than the wafer radius. In another embodiment, the proximal joint can extend greater than the diameter of the wafer. Thus, the size of the fluid meniscus can be any suitable size depending on the size of the wafer surface area that is required to be processed at any known point in time. In addition, it should be noted that depending on the wafer processing operation, the proximal joint 106 can be placed in any suitable orientation, such as horizontal, vertical, or any other suitable and intervening position. The proximal connector 1〇6 can also be included in a wafer processing system that performs one or more types of wafer processing operations. Figure 8C illustrates an inlet/outlet pattern of a proximal joint 1〇6 in accordance with an embodiment of the present invention. In this embodiment, the proximal joint 106 includes source inlets 1302 and 1306 and a source outlet 1304. In an embodiment, source outlet 1304 can surround source inlet 1306 and source inlet 1302 can surround source outlet 1304. Figure 8D illustrates another inlet/outlet pattern of the proximal joint 1〇6 in accordance with an embodiment of the present invention. In this embodiment, the proximal joint 106 includes source inlets 1302 and 1306 and a source outlet 1304. In an embodiment, the source outlet 1304 can surround the source inlet 1306 and the source inlet 1302 can at least partially surround the source outlet 1304. Figure 8E illustrates a further inlet/outlet pattern of the proximal joint 1〇6 in accordance with an embodiment of the present invention. In this embodiment, the proximal joint 106 includes a source inlet 1302 21 1262554 port '13〇6 1304 °. In one embodiment, the source outlet 1304 can surround the source-in-one embodiment, and the proximal joint 106 does not include the source inlet. 1302, because the •f liquid ^ can be produced without applying IPA/N2; the "birth-stabilized i" is a model of the 3^ export type, and can be used as long as it can be produced. The volume of the body of the diameter, any appropriate type of inlet / outlet type will be known after the cutting of the patent specifications and research drawings of the several shells of the ^ ^ ^ 'Additional, replacement and equivalent design. Therefore, the present invention is intended to cover the true spirit and scope of the present invention. All such changes, additions, permutations, and [simplified descriptions of the drawings] will be more readily understood from the following detailed description. Digital phase _ construction component. For ease of use during the process of Crystal Age-Callin ((4) Cleaning Wire), Figure 1B illustrates an exemplary wafer drying process. 2A shows a wafer process in accordance with an embodiment of the present invention. FIG. 2B shows an area having the same portion in accordance with an embodiment of the present invention. The read rate is not shown in Figure 3. During the wafer processing operation, a near connector is used. One Embodiment of Present Embodiment FIG. 4 shows a wafer processing chamber in accordance with an embodiment of the present invention. Figure 5 shows a wafer processing cycle in accordance with an embodiment of the present invention. Figure 6 illustrates a wafer processing 'two in accordance with an embodiment of the present invention. Figure 7 shows a wafer cleaning in accordance with one embodiment of the present invention. Figure 8A illustrates the execution of a system in accordance with one of the embodiments of the present invention. Cheng Zhilian joint. ^Dry operation 22 1262554 Figure 8B shows a partial top view of a proximal joint in accordance with an embodiment of the present invention. Figure 8C illustrates an inlet/outlet pattern of a proximal joint in accordance with one embodiment of the present invention. Figure 8D illustrates another inlet/outlet pattern of a proximal joint in accordance with one embodiment of the present invention. Figure 8E illustrates a further inlet/outlet pattern of a proximal joint in accordance with an embodiment of the present invention. [Main component symbol description] 10~ Wafer Φ 12~Liquid/Gas interface 14~Rotate 16~ Fluid direction arrow 18~ Wafer drying process 20~(Hydrophilic) part 22~(Water repellent) part 26~ Fluid 100~ Wafer processing system 104 ~ fluid meniscus m 105 ~ arm 106 ~ near joint 106a ~ near joint 106b ~ near joint 108 ~ wafer - 108a ~ wafer 108 upper surface. l 〇 8b ~ wafer 108 lower surface 112~fluid sensor 120~fluid source distributor 122~fluid source 23 1262554 124~fluid source controller 150~fluid 152~part 180~region 200~evaporation molecule 202~re-synthesis molecule 250~dry zone 270~wet area 272~ Area 274~ Area• 278~ Fluid 300~ Wafer Processing Room 302~ Entry 304~ Out 〇306~ Entrance/310~ Input 400~ Wafer Processing Environment 400'~ Wafer Processing Environment 402~ Entry 404~ Control Range _ 406 ~ Wafer area 500 ~ Wafer processing environment generator 502 ~ Bubbler 504 ~ Fluid 506 ~ Input. 508 ~ Gas 510 ~ Vapor 1100 ~ Wafer Processing System 1102a ~ Roller 1262554 1102b ~ Roller 1102c ~ Roller 1104 ~ 1104a~ arm 1104b~ lower arm 1302~ source inlet 1304~ source inlet fitting outlet 1306~ source carrier assembly 1310~ isopropanol in nitrogen gas IPA / N2 vapor in the vacuum 1312~ •
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