JP5284918B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a semiconductor wafer or a glass substrate of a liquid crystal display device (hereinafter simply referred to as a substrate) with a processing liquid.

  Conventionally, this type of apparatus includes a processing tank that stores a processing liquid and accommodates a substrate, and a nozzle that surrounds the processing tank and supplies IPA (isopropyl alcohol) vapor to an upper space of the processing tank. Yes (see, for example, Patent Document 1).

  In this apparatus, cleaning is performed by immersing the substrate in pure water while pure water is stored in the treatment tank. Next, as the solvent vapor, for example, IPA vapor is supplied to the upper space to form a dry atmosphere, and the substrate is lifted from pure water to the dry atmosphere. Thereby, the pure water adhering to the substrate is replaced with water-soluble IPA vapor. Therefore, drying of pure water adhering to the substrate is promoted.

  Moreover, a solvent having a lower surface tension than IPA may be used as the solvent. Examples of this solvent include water-insoluble HFE (hydrofluoroether), and generally a solvent in which a small amount (for example, 5%) of water-soluble IPA is mixed is used.

Japanese Patent Laid-Open No. 10-22257

However, the conventional example having such a configuration has the following problems.
That is, in the conventional apparatus, even when a solvent having a low surface tension is used, the substrate lifts pure water when the substrate is moved from the treatment tank to the dry atmosphere. For example, if a fine pattern is formed on the surface of the substrate, the substrate is lifted to a dry atmosphere with pure water entering between the fine patterns. Therefore, even if pure water between fine patterns is replaced with solvent vapor in a dry atmosphere and drying is accelerated, a load is applied to the fine pattern of the substrate due to the surface tension of pure water. As a result, there is a problem that the fine pattern may collapse.

  When the fine pattern collapses as described above, the device formed on the substrate becomes defective, and the yield deteriorates.

  This invention is made in view of such a situation, Comprising: It aims at providing the substrate processing apparatus and substrate processing method which prevent the fine pattern fall by reducing the surface tension of a pure water. .

In order to achieve such an object, the present invention has the following configuration.
That is, the invention according to claim 1 is a substrate processing apparatus for processing a substrate with a processing liquid, and stores the processing liquid and can store the substrate, and holds the substrate, and corresponds to the inside of the processing tank. Holding mechanism movable across the processing position and the upper position corresponding to above the processing tank, a first supply means for supplying pure water to the processing tank, a fluorinated solvent, a hydrophilic solvent, and silylation Pure water is supplied from the first supply means to the treatment tank in a state where the substrate is moved to the treatment position by the holding mechanism. The substrate is subjected to pure water cleaning treatment, the hydrophobic solution is supplied from the second supply means to the treatment tank, the inside of the treatment tank is replaced with pure water, and the hydrophobic solution The substrate is reformed by the above, After rinsing the substrate by supplying pure water into the processing tank from first supply means, and it is characterized in that it comprises a control means for moving the holding mechanism in the upper position.

  [Operation / Effect] According to the first aspect of the present invention, the control means causes the pure water to be supplied from the first supply means to the treatment tank so as to perform the pure water cleaning process on the substrate. Then, the hydrophobizing solution is supplied from the second supply means to the processing tank to replace the pure water in the processing tank, and the substrate is modified by the hydrophobizing solution. Since the hydrophobizing solution contains a silylating agent, the substrate is hydrophobized by the modification treatment. The control means supplies pure water from the first supply means to the treatment tank and rinses the substrate, and then moves the holding mechanism to the upper position. However, since the substrate is hydrophobized, the remaining amount of pure water remains. In addition, the surface tension applied to the fine pattern of the substrate can be extremely reduced by pure water. Therefore, even if the substrate is lifted upward from pure water, the force that the fine pattern of the substrate receives due to the surface tension of the pure water can be reduced, and the fine pattern of the substrate can be prevented from falling.

  Here, examples of the “fluorinated solvent” include HFE (hydrofluoroether), HFC (hydrofluorocarbon), perfluorocarbon, and the like.

  The “silylating agent” used herein includes dimethylsilyldimethylamine, dimethylsilyldiethyleneamine, dimethylaminodimethyldisilazane, hexamethyldisilazane, tetramethyldisilazane, bis (dimethylamino) dimethylsilane, N, N. Examples include '-dimethylaminotrimethylsilane, trimethylchlorosilane, dimethylchlorosilane, triethylchlorosilane, diethylchlorosilane, triisopropylchlorosilane, t-butyldimethylchlorosilane, t-butyldiphenylchlorosilane, and the like.

  The “hydrophilic solvent” herein may be any hydrophilic solvent miscible with the fluorinated solvent, and examples thereof include alcohols, ketones, ethers, esters, carboxylic acids, and polar aprotic solvents. Examples of the “alcohol” include methanol, ethanol, isopropanol, and t-butanol. Examples of the “ketone” include acetone and methyl ethyl ketone. Examples of the “ether” include ethylene glycol monomethyl ether and diethylene glycol monobutyl ether. And cyclic ethers such as tetrahydrofuran and dioxane. Examples of the “ester” include ethyl acetate and ethyl lactate, examples of the carboxylic acid include acetic acid and lactic acid, and examples of the “polar aprotic solvent” include dimethyl sulfoxide (DMSO) and dimethylformaldehyde (DMF). ), Pyridine, N-methylpyrrolidone, N, N-dimethylacetamide (DMA) and the like.

  In the present invention, a third supply means for supplying diluted hydrofluoric acid as diluted hydrofluoric acid to the treatment tank and a fourth supply means for supplying diluted hydrochloric acid as diluted hydrochloric acid to the treatment tank are provided. The control means supplies dilute hydrofluoric acid from the third supply means to the treatment tank before the pure water cleaning treatment, and before the reforming treatment, from the fourth supply means to the treatment tank. It is preferable to supply dilute hydrochloric acid (Claim 2). By supplying dilute hydrofluoric acid through the third supply means, the control means can remove a natural oxide film or the like that may be formed on the substrate, and can perform a pure water cleaning process on the substrate itself. The subsequent pure water cleaning treatment can be appropriately performed. In addition, the control means can supply the diluted hydrochloric acid via the fourth supply means, so that the metal impurities and the like adhering to the substrate can be removed and cleaned, and the subsequent reforming process can be suitably performed. it can.

  In the present invention, the processing tank includes an inner tank that accommodates the substrate and an outer tank that collects the processing liquid overflowing from the inner tank, and the inner tank and the outer tank are connected to each other. It is preferable that the control means circulates the hydrophobized solution by operating the circulation pump during the reforming treatment (circulation pipe for performing the above-described operation). Claim 3). By circulating the hydrophobizing solution, the active hydrophobizing solution can be constantly supplied to the substrate, and therefore the hydrophobizing treatment can be suitably performed.

  Moreover, in this invention, it is preferable that a said 2nd supply means supplies the hydrophobization solution from the bottom part of the said processing tank (Claim 4). Since the hydrophobizing solution contains a fluorinated solvent, the specific gravity is larger than that of pure water. Therefore, by supplying a hydrophobic solution having a specific gravity greater than that of pure water from the bottom of the treatment tank, the hydrophobic solution can be supplied while maintaining the interface between the pure water and the hydrophobic solution. As a result, the replacement of pure water can be performed efficiently, and the hydrophobic treatment can be performed efficiently.

  In the present invention, the fifth supply means for supplying pure water to the treatment tank from above the treatment tank, the discharge means for discharging the treatment liquid from the bottom of the treatment tank, and the treatment discharged from the discharge means A recovery tank for recovering the liquid, and the control means supplies pure water from the fifth supply means when supplying pure water after the reforming process during the rinsing process. It is preferable that the hydrophobized solution is recovered from the discharge means into the recovery tank. When supplying pure water in the rinsing process after the reforming process, the control unit supplies pure water from the fifth supply unit, but supplies pure water having a lower specific gravity than the hydrophobic solution from above. Therefore, the hydrophobized solution can be efficiently recovered from the discharge means to the recovery tank.

  In the present invention, it further comprises a chamber surrounding the treatment tank and a sixth supply means for supplying solvent vapor into the chamber, and the control means moves the holding mechanism to an upper position after the rinsing process. It is preferable that a heated inert gas is supplied from the sixth supply unit to form a dry atmosphere in the chamber before the process is performed. By supplying the inert gas heated by the sixth supply means by the control means and forming a dry atmosphere in the chamber, drying of pure water adhering to the substrate pulled upward can be promoted.

  According to a seventh aspect of the present invention, in the substrate processing method for processing a substrate with a processing solution, pure water is supplied to the processing tank while the substrate is moved to a processing position in the processing tank. The process of cleaning with pure water and supplying a hydrophobizing solution containing a fluorinated solvent, a hydrophilic solvent, and a silylating agent to the processing tank, and replacing the inside of the processing tank with pure water And a process of modifying the substrate with the hydrophobizing solution and a process of rinsing the substrate by supplying pure water to the treatment tank and then moving the substrate to a position above the treatment tank. It is characterized by that.

  [Operation / Effect] According to the invention described in claim 7, after the pure water is supplied to the treatment tank and the substrate is subjected to the pure water cleaning treatment, the hydrophobic treatment solution is supplied to the treatment tank. The pure water in the treatment tank is replaced, and the substrate is modified by the hydrophobizing solution. Since the hydrophobizing solution contains a silylating agent, the substrate is hydrophobized by the modification treatment. Next, after supplying the pure water to the treatment tank and rinsing the substrate, the substrate is moved to the upper position. However, since the substrate is hydrophobized, the remaining amount of pure water can be reduced. The surface tension applied to the fine pattern of the substrate can be made extremely small by pure water. Therefore, even if the substrate is lifted upward from pure water, the force that the fine pattern of the substrate receives due to the surface tension of the pure water can be reduced, and the fine pattern of the substrate can be prevented from falling.

  Further, in the present invention, a process of supplying dilute hydrofluoric acid to the treatment tank before the pure water cleaning process and a process of supplying dilute hydrochloric acid to the process tank before the reforming process are provided. (Claim 8) Further, after the rinsing process, before the substrate is moved to a position above the processing tank, a heated inert gas is supplied to provide a dry atmosphere in the chamber surrounding the processing tank. Preferably, it is formed (claim 9).

  According to the substrate processing apparatus of the present invention, the control unit causes the pure water to be supplied from the first supply unit to the processing tank so that the substrate is subjected to the pure water cleaning process. Then, the hydrophobizing solution is supplied from the second supply means to the processing tank to replace the pure water in the processing tank, and the substrate is modified by the hydrophobizing solution. Since the hydrophobizing solution contains a silylating agent, the substrate is hydrophobized by the modification treatment. The control means supplies pure water from the first supply means to the treatment tank and rinses the substrate, and then moves the holding mechanism to the upper position. However, since the substrate is hydrophobized, the pure water The surface tension applied to the fine pattern is very small. Therefore, even if the substrate is lifted upward from pure water, the force that the fine pattern of the substrate receives due to the surface tension of the pure water can be reduced, and the fine pattern of the substrate can be prevented from falling.

It is a schematic diagram for demonstrating the mechanism concerning collapse of a fine pattern. It is a schematic diagram which shows the state to which this invention is applied. It is a block diagram which shows schematic structure of the substrate processing apparatus which concerns on an Example. It is a schematic diagram with which it uses for description of a process, (a) shows the state in which a holding mechanism exists in an upper position, (b) shows the state of a DHF rinse process. It is a schematic diagram with which it uses for description of a process, (a) shows the state which has substituted DHF with the pure water, (b) shows the state of the pure water rinse process. It is a schematic diagram with which it uses for description of a process, (a) shows the state which has substituted the pure water with the diluted hydrochloric acid, (b) shows the state of the diluted hydrochloric acid rinse process. It is a schematic diagram with which it uses for description of a process, (a) shows the state which has substituted the diluted hydrochloric acid with the pure water, (b) shows the state of the pure water rinse process. It is a schematic diagram used for description of a process, (a) shows the state which has substituted the pure water with the hydrophobization solution, (b) shows the state of the hydrophobization process. It is a schematic diagram with which it uses for description of a process, (a) shows the state which substituted the hydrophobization solution with the pure water, (b) shows the state of the pure water rinse process. It is a schematic diagram with which it uses for description of a process, (a) shows the state which has formed the dry atmosphere, (b) shows the state of a drying process.

An embodiment of the present invention will be described below with reference to the drawings.
First, the mechanism of the present invention will be described with reference to FIGS. FIG. 1 is a schematic diagram for explaining a mechanism related to collapse of a fine pattern, and FIG. 2 is a schematic diagram showing a state in which the present invention is applied.

  For example, as shown in FIG. 1, a certain fine pattern mp is formed on the substrate W. For example, the substrate W is immersed in pure water to perform a pure water cleaning process. Then, the state which pulled up the board | substrate W from the pure water is demonstrated to an example. When attention is paid to a certain fine pattern mp1, a symbol γ (γ1, γ2) in FIG. 1 is a surface tension acting on the fine pattern mp1. If the surface tensions γ1, γ2 acting on both sides of the fine pattern mp1 are different in magnitude or the point of action of the respective surface tensions γ1, γ2 is different, the total surface tension applied to the fine pattern mp1 is only on one side. As a result, the fine pattern mp1 collapses. In addition, the drying speed in all the fine patterns mp does not become uniform, and there is a certain degree of variation, so the speed at which the action point decreases is also different, which also causes the fine patterns mp to collapse.

The maximum force Σ _MAX acting on the collapse of the fine pattern mp1 can be expressed by the following equation. In addition, the meaning of each code | symbol in a type | formula is as follows.
D: Fine pattern interval, H: Fine pattern height, wd: Fine pattern width, θ: Contact angle, γ: Surface tension

The following three can be considered to reduce the force Σ _MAX .
(1): The surface tension is brought close to zero.
(2): The contact angle cos θ is brought close to zero.
(3): The time during which the force acts is brought close to zero.

  The above (1) and (3) are very difficult, but (2) is relatively easy. As a specific method for realizing this, the entire surface of the substrate W is made hydrophobic. It has been found that a hydrophobizing solution is used to make it (water repellent).

  Specifically, by making hydrophobic, as shown in FIG. 2, the direction of the surface tension acting on the fine pattern mp can be changed to the direction of antigravity. Thereby, the force which acts on a fine pattern can be made small and collapse can be prevented. In addition, when the substrate W is pulled up from the processing liquid, droplets remaining on the substrate W can be extremely reduced.

  Next, a substrate processing apparatus for cleaning and drying the substrate W will be described as an example of an apparatus for performing the above-described processing. FIG. 3 is a block diagram illustrating a schematic configuration of the substrate processing apparatus according to the embodiment.

  The processing tank 1 includes an inner tank 3 and an outer tank 5. The inner tank 3 is configured to accommodate the substrate W. A pair of injection tubes 7 are attached to the bottom of the inner tank 3. One end side of the circulation pipe 9 is connected to the pair of injection pipes 7 in communication. The other end of the circulation pipe 9 is connected to the bottom of the outer tank 5 for recovering the processing liquid overflowing from the inner tank 3.

  A branching portion 11, a circulation pump 13, an in-line heater 15, a filter 17, and a mixing valve 19 are attached to the circulation pipe 9 in this order from the upstream side. One end of a drainage pipe 21 is connected to the branch portion 11 in communication. An open / close valve 23 is attached to the drain pipe 21. The other end of the drainage pipe 21 is connected to a waste liquid facility (not shown). The circulation pump 13 circulates the processing liquid in the circulation pipe 9. The in-line heater 15 heats the processing liquid in the circulation pipe 9 to a predetermined temperature. The filter 17 removes particles and the like in the processing liquid.

  In the mixing valve 19, for example, one end sides of five supply pipes 25 to 29 are connected in communication. The other end side of the supply pipe 25 is connected to, for example, a pure water supply source (denoted as DIW supply source in the drawing), and the other end side of the supply pipe 26 is, for example, a hydrofluoric acid supply source (see FIG. The other end side of the supply pipe 27 is connected to an acid supply source that supplies an acid such as HCL, and the other end side of the supply pipe 28 is, for example, And a solvent supply source for supplying a solvent such as HFE. Further, the other end side of the supply pipe 29 is connected to, for example, a hydrophobizing solution unit 31. The hydrophobizing solution unit 31 is, for example, a hydrophobic containing HFE (hydrofluoroether) as a fluorinated solvent, IPA (isopropyl alcohol) as a hydrophilic solvent, and HMDS (hexamethyldisilazane) as a silylating agent. The chemical solution is stored. The proportion is, for example, 3% HMDS, 5% IPA, and 92% HFE. IPA is preferably about 5% to 3% from the viewpoint of explosion protection. The supply pipes 25 to 29 are provided with flow rate adjustment valves 33 to 37 that can adjust the flow rate. The solvent supply source stores, for example, IPA, which is a water-soluble solvent, and HFE, which is a water-insoluble solvent, as a solvent mixed at a ratio of, for example, 5:95.

  The supply pipe 25, the mixing valve 19, the circulation pipe 9, and the injection pipe 7 correspond to the “first supply means” in the present invention, and the supply pipe 29, the mixing valve 19, the circulation pipe 9, and the injection pipe 7 in the present invention. This corresponds to “second supply means”. The supply pipes 25 and 26, the mixing valve 19, the circulation pipe 9 and the injection pipe 7 correspond to the “third supply means” in the present invention, and the supply pipes 25 and 27, the mixing valve 19, the circulation pipe 9 and the injection pipe 7 are provided. Corresponds to the “fourth supply means” in the present invention.

  A holding mechanism 39 that moves in the vertical direction is provided with respect to the processing tank 1. The holding mechanism 39 holds a plurality of substrates W in an upright posture. The holding mechanism 39 extends over a “processing position” (shown by a solid line in FIG. 1) shown in the inner tank 3 and an “upward position” (shown by a two-dot chain line in FIG. 1) above the processing tank 1. It can be raised and lowered.

The processing tank 1 is entirely surrounded by a chamber 41. A pair of nozzles 43 are attached to both side walls near the ceiling of the chamber 41. A gas supply source is connected to the nozzle 43, and for example, dry hot N ₂ gas is supplied as an inert gas heated and dried.

  The nozzle 43 corresponds to the “sixth supply unit” in the present invention.

  A supply nozzle 45 for supplying pure water to the inner tank 3 is disposed above the inner tank 3. One end of a supply pipe 47 is connected to the supply nozzle 45 in communication. The other end of the supply pipe 47 is connected to a pure water supply source (denoted as DIW supply source in the figure). A flow regulating valve 49 capable of controlling the flow rate is attached to the supply pipe 47.

  The supply nozzle 45, the supply pipe 45, and the flow rate adjustment valve 49 correspond to the “fifth supply unit” in the present invention.

  A discharge port 51 is formed at the bottom center of the inner tank 3. One end side of the discharge pipe 53 communicates with the discharge port 51 and the other end side communicates with a waste liquid facility (not shown). An open / close valve 55 is attached to the discharge pipe 53. The connection destination of the discharge pipe 53 is appropriately switched between the waste liquid facility and the recovery tank 57 depending on the situation.

  The holding mechanism 39 described above is directly moved up and down by the lifting drive unit 57.

  The circulation pump 13, the inline heater 15, the on-off valve 23, the flow rate adjusting valves 33 to 37, the nozzle 43, the flow rate adjusting valve 49, the on-off valve 55, and the lifting / lowering drive unit 57 control the discharge destination of the discharge pipe 53. Controlled by the unit 59.

  The control unit 59 corresponds to the “control unit” in the present invention.

  Next, processing examples by the above-described apparatus will be described with reference to FIGS. 4 to 10 are schematic diagrams for explaining the processing. FIG. 4A shows a state where the holding mechanism is in the upper position, FIG. 4B shows a state of the DHF rinse processing, FIG. 5 (a) shows a state where DHF is replaced with pure water, FIG. 5 (b) shows a state of pure water rinse treatment, and FIG. 6 (a) shows a case where pure water is replaced with dilute sulfuric acid. 6 (b) shows the state of the dilute hydrochloric acid rinse treatment, FIG. 7 (a) shows the state where the dilute hydrochloric acid is replaced with pure water, and FIG. 7 (b) shows the state of the pure water rinse treatment. FIG. 8 (a) shows a state in which pure water is replaced with a hydrophobizing solution, FIG. 8 (b) shows a state of hydrophobizing treatment, and FIG. 9 (a) shows a state in which the hydrophobizing solution is purified. FIG. 9 (b) shows a state of pure water rinsing treatment, FIG. 10 (a) shows a state where a dry atmosphere is formed, and FIG. It shows the state of the drying process.

  First, the control unit 59 opens the flow rate adjusting valves 33 and 34 so as to obtain a predetermined flow rate in a state where the on-off valves 23 and 55 are closed. Thereby, dilute hydrofluoric acid (denoted as DHF in the drawing) of a predetermined concentration is supplied from the injection tube 7 into the inner tank 3 to store the dilute hydrofluoric acid in the inner tank 3 (FIG. 4A). In a state where dilute hydrofluoric acid is stored in the inner tank 3, the control unit 59 lowers the holding mechanism 39 holding the substrate W and waiting at the upper position to the processing position (FIG. 4B). This state is maintained for a predetermined time (for example, 5 minutes). Thereby, the natural oxide film etc. which may be formed in the board | substrate W can be removed, the process mentioned later can be given to the board | substrate W itself, and a subsequent process can be given appropriately.

  Next, the control unit 59 opens the on-off valve 23, closes the flow rate adjustment valve 34, and opens the flow rate adjustment valve 33 at a predetermined flow rate. As a result, only pure water is supplied from the injection pipe 7 to the inner tank 3 (FIG. 5A). Accordingly, dilute hydrofluoric acid in the inner tank 3 is drained through the drainage pipe 21, and finally the inner tank 3 is made pure water only (FIG. 5B). This is maintained for a predetermined time (for example, 15 minutes), and the substrate W is rinsed with pure water.

  Next, the control unit 59 opens the flow rate adjusting valves 33 and 35 so as to obtain a predetermined flow rate. Thus, dilute hydrochloric acid having a predetermined concentration is supplied from the injection pipe 7 into the inner tank 3, and the diluted hydrochloric acid is stored in the inner tank 3 while discharging pure water (FIG. 6A). This state is maintained for a predetermined time (for example, 5 minutes) (FIG. 6B). As a result, metal impurities or the like that may adhere to the substrate W can be removed and cleaned, and the subsequent modification treatment can be suitably performed.

  The control unit 59 closes the flow rate adjustment valve 35 and opens the flow rate adjustment valve 33 at a predetermined flow rate. Thereby, only pure water is supplied from the injection pipe 7 to the inner tank 3 (FIG. 7A). Accordingly, dilute hydrochloric acid in the inner tank 3 is drained through the outer tank 5, the circulation pipe 9 and the drain pipe 21, and finally the inner tank 3 is made pure water only (FIG. 7B). This is maintained for a predetermined time (for example, 15 minutes), and the substrate W is cleaned with pure water.

  Next, the control unit 59 closes the flow rate adjustment valve 33 and opens the flow rate adjustment valve 37 at a predetermined flow rate. Thereby, only the hydrophobization solution is supplied from the injection tube 7 to the inner tank 3 (FIG. 8A). At this time, the flow rate is preferably small so that the pure water can be lifted while the interface between the pure water and the hydrophobized solution in the inner tank 3 is maintained. By doing in this way, pure water can be efficiently discharged while avoiding mixing of the hydrophobized solution and pure water. After the pure water is discharged and the inner tank 3 becomes only the hydrophobized solution, the control unit 59 operates the circulation pump 13 and the inline heater 15. Thereby, it circulates in the state heated to predetermined temperature (it is the temperature below the boiling point of a hydrophobization solution, for example, 54 degrees C or less, or 45 degrees C or less) (FIG.8 (b)). This is maintained for a predetermined time (for example, 1 minute or more, preferably 5 minutes or more), and the hydrophobic modification process is performed on the substrate W.

  Next, the control unit 59 closes the flow rate adjustment valve 33 and opens the flow rate adjustment valve 49 to supply pure water from above the inner tank 3 at a predetermined flow rate. Further, the on-off valve 55 is opened to allow the drainage to communicate with the recovery unit 57 (FIG. 9A). As a result, the hydrophobized solution having a specific gravity heavier than that of pure water and having a high cost can be recovered by the recovery unit 57 and reused, so that the running cost can be reduced. After all the hydrophobized solution in the inner tank 3 has been discharged, the on-off valve 55 is closed and the overflowing pure water is drained through the outer tank 5. This state is maintained for a predetermined time (for example, 15 minutes), and a pure water cleaning process is performed on the substrate W (FIG. 9B).

Next, the control unit 59 closes the flow rate adjustment valve 49 and opens the flow rate adjustment valve 33 at a predetermined flow rate so that pure water is supplied from the injection pipe 7 to the inner tank 3. Further, nitrogen gas (N ₂ ) heated from the nozzle 43 is supplied to the chamber 41 to form a dry atmosphere in the upper space of the chamber 41 (FIG. 10A). Thereafter, the control unit 59 operates the elevation drive unit 57 to raise the substrate W in the processing position to the upper position together with the holding mechanism 39 (FIG. 10B). As a result, a drying process is performed on the substrate W. However, since the hydrophobic process is already performed on the substrate W, most of the pure water is detached from the substrate W when the substrate W is pulled up from the pure water. . Even if there is pure water remaining on the substrate W, the force acting on the fine pattern mp of the substrate W is made as small as possible, so that the collapse of the fine pattern mp can be prevented.

  According to the apparatus of the present embodiment, the control unit 59 supplies pure water to the processing tank 1, causes the substrate W to perform pure water cleaning processing, causes the processing tank 1 to supply a hydrophobized solution, The pure water in 1 is replaced, and the substrate W is modified with a hydrophobizing solution. Since the hydrophobizing solution contains HMDS as a silylating agent, the entire surface of the substrate W is hydrophobized by the modification treatment. The control unit 59 supplies pure water to the processing tank 1 and rinses the substrate W, and then moves the holding mechanism 39 to an upper position. However, since the substrate W is hydrophobized, the remaining amount of pure water remains. Can be reduced, and the surface tension applied to the fine pattern of the substrate W can be extremely reduced by pure water. Therefore, even if the substrate W is lifted upward from pure water, the force that the fine pattern of the substrate W receives due to the surface tension of the pure water can be reduced, and the fine pattern of the substrate W can be prevented from falling.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In the embodiment described above, when the substrate W is pulled up, it is immersed in pure water. Instead, the flow rate adjustment valve 36 is opened to store the mixed liquid of HFE and IPA, and the solvent is used as a solvent. You may make it soak. Since the surface tension of HFE is smaller than that of pure water, the influence of the surface tension can be further suppressed.

  (2) In the embodiment described above, heated nitrogen gas is used to form a dry atmosphere, but instead, a dry atmosphere may be formed by solvent vapor. As a result, the droplets adhering to the substrate W can be replaced to promote drying.

  (3) In the above-described embodiments, HFE is used as the fluorinated solvent, but HFC (hydrofluorocarbon), perfluorocarbon, or the like may be used instead.

  (4) In the above-described examples, HMDS is used as the silylating agent. Instead, dimethylsilyldimethylamine, dimethylsilyldiethyleneamine, dimethylaminodimethyldisilazane, hexamethyldisilazane, tetramethyldisilazane, Bis (dimethylamino) dimethylsilane, N, N′-dimethylaminotrimethylsilane, trimethylchlorosilane, dimethylchlorosilane, triethylchlorosilane, diethylchlorosilane, triisopropylchlorosilane, t-butyldimethylchlorosilane, t-butyldiphenylchlorosilane, etc. are used. May be.

  (5) In the above-described embodiments, IPA is used as the hydrophilic solvent, but the hydrophilic solvent may be any hydrophilic solvent that is miscible with the fluorinated solvent. For example, alcohol, ketone, ether, ester, carboxylic acid, polar aprotic solvent and the like can be mentioned. Examples of the “alcohol” include methanol, ethanol, isopropanol, and t-butanol. Examples of the “ketone” include acetone and methyl ethyl ketone. Examples of the “ether” include ethylene glycol monomethyl ether and diethylene glycol monobutyl ether. And cyclic ethers such as tetrahydrofuran and dioxane. Examples of the “ester” include ethyl acetate and ethyl lactate, examples of the carboxylic acid include acetic acid and lactic acid, and examples of the “polar aprotic solvent” include dimethyl sulfoxide (DMSO) and dimethylformaldehyde (DMF). ), Pyridine, N-methylpyrrolidone, N, N-dimethylacetamide (DMA) and the like.

  (6) In the embodiment described above, the treatment with diluted hydrofluoric acid is performed before the pure water cleaning treatment, but this may be omitted depending on the state of the substrate W. Further, although the treatment with dilute hydrochloric acid is performed before the reforming treatment, this may be omitted depending on the state of the substrate W. Thereby, the throughput can be improved and the apparatus configuration can be simplified.

W ... Substrate mp, mp1 ... Fine pattern γ, γ1, γ2 ... Surface tension 1 ... Treatment tank 3 ... Inner tank 5 ... Outer tank 7 ... Injection pipe 9 ... Circulation pipe 13 ... Circulation pump 15 ... Inline heater 19 ... Mixing valve 25 -29 ... Supply pipe 31 ... Hydrophobized solution unit 33-37 ... Flow rate adjusting valve 39 ... Holding mechanism 41 ... Chamber 43 ... Nozzle 45 ... Supply nozzle 51 ... Discharge port 57 ... Elevating drive unit 59 ... Control unit

Claims (9)

In a substrate processing apparatus for processing a substrate with a processing liquid,
A processing tank for storing the processing liquid and accommodating the substrate;
A holding mechanism that holds the substrate and is movable between a processing position corresponding to the inside of the processing tank and an upper position corresponding to the upper side of the processing tank;
First supply means for supplying pure water to the treatment tank;
A second supply means for supplying a hydrophobizing solution containing a fluorinated solvent, a hydrophilic solvent, and a silylating agent to the treatment tank;
In a state where the substrate is moved to the processing position by the holding mechanism, pure water is supplied from the first supply unit to the processing tank to perform a pure water cleaning process on the substrate, and the second supply unit supplies the pure water. A hydrophobizing solution is supplied to the processing tank so that the inside of the processing tank is replaced with pure water from the hydrophobizing solution, and the substrate is reformed by the hydrophobizing solution. Control means for moving the holding mechanism to an upper position after supplying pure water and rinsing the substrate;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
Third supply means for supplying diluted hydrofluoric acid, which is diluted hydrofluoric acid, to the treatment tank;
A fourth supply means for supplying diluted hydrochloric acid, which is diluted hydrochloric acid, to the treatment tank,
The control means supplies dilute hydrofluoric acid to the treatment tank from the third supply means before the pure water cleaning treatment, and dilute hydrochloric acid to the treatment tank from the fourth supply means before the reforming treatment. A substrate processing apparatus. The substrate processing apparatus according to claim 1 or 2,
The processing tank includes an inner tank that accommodates the substrate, and an outer tank that recovers the processing liquid overflowing from the inner tank,
A circulation pipe connecting the inner tank and the outer tank in communication with each other;
A circulation pump provided in the circulation exhaust pipe,
The substrate processing apparatus characterized in that the control means circulates the hydrophobized solution by operating the circulation pump during the reforming process. In the substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the second supply means supplies the hydrophobizing solution from the bottom of the processing tank. In the substrate processing apparatus according to claim 1,
A fifth supply means for supplying pure water to the treatment tank from above the treatment tank;
Discharging means for discharging the processing liquid from the bottom of the processing tank;
A recovery tank for recovering the processing liquid discharged from the discharge means,
When the pure water is supplied during the rinsing process after the reforming process, the control means supplies the pure water from the fifth supply means and collects the hydrophobized solution from the discharge means. A substrate processing apparatus which collects in a tank. In the substrate processing apparatus in any one of Claim 1 to 5,
A chamber surrounding the treatment tank;
Sixth supply means for supplying a heated inert gas into the chamber;
The control means supplies an inert gas from the sixth supply means to form a dry atmosphere in the chamber before moving the holding mechanism to an upper position after the rinsing process. Substrate processing equipment. In a substrate processing method for processing a substrate with a processing liquid,
In the state where the substrate is moved to the processing position in the processing tank, pure water is supplied to the processing tank and the substrate is subjected to pure water cleaning processing;
A hydrophobizing solution containing a fluorinated solvent, a hydrophilic solvent, and a silylating agent is supplied to the treatment tank, the inside of the treatment tank is replaced with pure water, and the substrate is modified by the hydrophobizing solution The process of processing,
A process of moving the substrate to a position above the processing tank after supplying pure water to the processing tank and rinsing the substrate,
A substrate processing method characterized by comprising: In the substrate processing method of Claim 7,
Before the pure water cleaning treatment, a process of supplying dilute hydrofluoric acid to the treatment tank;
Before the reforming treatment, supplying diluted hydrochloric acid to the treatment tank;
A substrate processing method characterized by comprising: The substrate processing method according to claim 7 or 8,
After the rinsing process, before moving the substrate to a position above the processing tank, heated inertness is supplied to form a dry atmosphere in the chamber surrounding the processing tank.

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