492053 A7 五、發明說明（） 發明領i或： =係關於一種乾燥晶片之方法’特別是關於能夠提 供-方式’可運用在半導體製程巾，晶片在經液體 方式處理或濕式清潔處理後’去除晶片表面上之去離子 濕氣。 發明背景： 一般而言，在液晶顯示螢幕(Liquid ciystal display; lcd) 或晶片製程中’係使用-晶片乾燥機台絲除去晶片在經液 體方式處理或濕式清織理後’晶片表面上之去離子水或渴 氣。 在-般的半導體製程中係使用旋乾機或㈤麵_ 機台(kim觸nd⑽乾燥晶片。而其中„種使雌乾機來乾燥 晶片的方式，係利用旋乾機中之旋轉盤經旋轉產生離心力。 然而，此種方法會因旋轉所產生之物理力量而傷害晶片本 身，此外，產生旋轉之旋轉盤亦會有微粒附著於晶二上。另 一種使用kimmon dryer機台，為形成氣態二異丙醇之裝置， 係加熱/揮發約1 2〇0°c之有機極性溶劑之二異丙醇㈣猜1 alcohol ’· IPA)，如此，氣態之二異丙醇(IpA)會取代晶片表面 上之去離子水或濕氣，接著，使用熱氮氣乾燥晶片。然而， kimmon dryer機台仍有使用間題存在，其使用時容易引起火 火，因二異丙醇(IPA)的燃點(igniti〇np〇int)約為22。〇。而且， 當晶片最上層係為光阻圖案時，其高溫氣態之二異丙醇(ίρΑ) 會知飿其光阻圖案，再者，其機台本身亦會有殘留前所述之492053 A7 V. Description of the invention () The invention or i = is related to a method for drying wafers, especially about the method of providing-methods, which can be applied to semiconductor process towels, and the wafers are processed by liquid or wet cleaning. Remove deionized moisture from the wafer surface. Background of the invention: Generally speaking, in a liquid crystal display (LCD) or wafer process, the wafers are 'removed using-wafer dryers, and the wafers are treated on the surface of the wafers by liquid processing or wet cleaning. Deionized water or thirst. In the general semiconductor process, spin dryers or wafers are used to dry wafers. Among them, „a way for a female dryer to dry wafers is to use a spinning disk in the spin dryer to rotate the wafers. Centrifugal force is generated. However, this method will damage the wafer itself due to the physical force generated by the rotation. In addition, the rotating disk that generates the rotation will also have particles attached to the crystal. The isopropanol device is a diisopropanol (IPA) which is an organic polar solvent that heats / evaporates at about 1200 ° C. In this way, the gaseous diisopropanol (IpA) will replace the surface of the wafer. The deionized water or moisture is then used, and then the wafer is dried using hot nitrogen. However, the Kimmon dryer still has a problem in use, which is easy to cause fire when used, because of the ignition point of diisopropanol (IPA) (igniti 〇np〇int) is about 22. 0. Moreover, when the top layer of the wafer is a photoresist pattern, its high temperature gaseous diisopropanol (ίρΑ) will know its photoresist pattern, and the machine itself There will also be residues
--------^訂 il.------線 j (請先閱讀背面之注意事項再填寫本頁) 1 _____ 2 2 $^張尺度適用t國國家標準(CNS)A4 χ 297公釐 492053 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（ 光阻圖案於内。 為解決上述之問題，CFM Technology Research-------- ^ Order il .------ line j (Please read the notes on the back before filling in this page) 1 _____ 2 2 $ ^ Zhang scale is applicable to National Standards (CNS) A4 χ 297 mm 492053 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Invention Description (Photoresist pattern is included. To solve the above problems, CFM Technology Research
Associate’s Inc. (U.S· Patent Νο··4,911，761，McConeel et al.)曾 提出方法與裝置欲解決，其乾燥方式係使用一加熱裝置可在 溫度介於50至70°C之間蒸發二異丙醇(IPA)，並用共沸混合 物方式取代晶片表面上之去離子水或濕氣 ，如此可在不需移 動晶片的狀況下除水，最後，除去二異丙醇(IPA)與水所形成 之共沸混合物以乾燥晶片。在此方式中，需有一平穩的晶片 表面存在，因晶片表面上的水可幫助乾燥晶片。此種方式仍 存在著問題，由於難以防止晶片表面上水的波動或大量微粒 之產生。再者’雖此方式使用比機台較低之溫 度，但仍有引起火災之危險性，因二異丙醇(IPA)的燃點約為 22〇C。 發明之概述： 本發明之主要目的是提供一種乾燥晶片之方法，容易除 去在半導體製程中，晶片在經液體方式處理或濕式清潔處理 後，晶片表面上之去離子水或濕氣，而不會有在發明背景說 明中所述之問題產生。 本發明係使用下列步驟來達到上述之各項目的··第一步 驟係先使用去離子水沖洗晶片，其中所述去離子水係以一高 流量去離子水供應管提供所述去離子水至沖洗室中，接續， 進行第二步驟係抬升所述晶片至所述去離子水之液面並再 次沖洗所述晶片且所述去離子水的排出係經溢流裝置，如 --------^訂 iL--'----線 (請先閱讀背面之注意事項再填寫本頁)Associate's Inc. (US Patent No. 4,911,761, McConeel et al.) Has proposed methods and devices to solve the problem. The drying method is to use a heating device to evaporate the diisocyanate at a temperature between 50 and 70 ° C. Propanol (IPA), and replace the deionized water or moisture on the surface of the wafer with an azeotropic mixture, so that the water can be removed without moving the wafer. Finally, the formation of diisopropanol (IPA) and water is removed. An azeotropic mixture to dry the wafer. In this method, a smooth wafer surface is required because water on the wafer surface can help dry the wafer. This method still has problems, because it is difficult to prevent the fluctuation of water on the wafer surface or the generation of a large number of particles. Furthermore, although this method uses a lower temperature than the machine, there is still a risk of fire. The ignition point of diisopropanol (IPA) is about 22 ° C. Summary of the invention: The main object of the present invention is to provide a method for drying wafers, which is easy to remove the deionized water or moisture on the wafer surface after the wafers are processed by liquid or wet cleaning in the semiconductor process without The problems described in the background of the invention arise. The present invention uses the following steps to achieve the above-mentioned items ... The first step is to rinse the wafer with deionized water, wherein the deionized water is provided by a high-flow deionized water supply pipe to the deionized water to In the rinsing room, the second step is to lift the wafer to the level of the deionized water and rinse the wafer again, and the discharge of the deionized water is through an overflow device, such as ----- --- ^ Order iL --'---- line (Please read the precautions on the back before filling this page)
492053 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（） 此，所述去離子水單向流動至單向流動裝置，再接續，第三 步驟係抬升原在所述去離子水液面之所述晶片至取代/乾燥 區，如此在所述取代/乾燥區中之有機極性溶劑氣體可取代所 述晶片上之去離子水和濕氣，其中所述之噴霧室係供給所述 有機極性溶劑氣體和鈍性氣體，最後，第四步驟乾燥所述晶 片，係於所述喷霧室僅提供所述鈍性氣體於取代/乾燥區中， 用以除去在所述晶片上所吸附之有機極性溶劑氣體。 圖式簡要說明： 圖一 A為本實施例中於乾燥機使用去離子水沖洗晶片 及形成有機極性溶劑氣體於取代/乾燥區21的剖面示意圖。 、圖-B為本實施例帽晶片移至去離子水液面去除污 染源之剖面示意圖。 圖—C為本實施例中將晶片移至取代/乾燥區中，使有 機極! 生岭劑洛氣取代晶片表面之水氣和濕氣之剖面示奇圖。 D林實關巾之取峨馳做贱絲體以 表^木日日片表面之剖面示意圖。 圖號說明： io-喷霧區 21-取代/乾燥區 23-溢流裝置 25-單向流動裝置 3〇-去離子水供應管 20_反應腔 22_沖洗區 24_置晶器 26_噴霧嘴 40-晶片 I I —fr n —l> H I 1 I I I I C請先閱讀背面之注意事項再填寫本頁) — I-訂-ί —」----線·--- 本',、氏張尺度賴中國jg家標準（cns)a4規格（21〇 X 297 公 492053 Α7 Β7 500-有機極性溶劑層 五、發明說明（） 50-去離子水 名务明詳細說明： 本發明將提供一實施例並配合圖示說明之。 圖一 A〜一 D係為本發明實施例中乾燥晶片方法之剖面 示意圖。 首先，先參考圖一所示，本發明之實施例中之乾燥晶片 機台係包含有一喷霧區1〇、一反應腔20和一高流量之去離 子水供應管30。 其喷霧區10係位於反應腔20之上方，其作用在於供應 有機極性溶劑和惰性氣體至反應腔2〇中。此外，噴霧區1〇 中有開關之控制，而反應腔亦可置入/退出晶片40。 其反應腔20係由一取代/乾燥區21和一沖洗區22所組 成。其中取代/乾無區21中含有有機極性溶劑之蒸氣和惰性 氣體，其中有機極性溶劑之蒸氣係從噴霧區1〇取得。沖洗 區22可從去離子水供應管30供給去離子水5〇。其取代/乾 燥區21和一沖洗區22區間以一溢流裝置23定義之，其溢 流裝置23可容納溢出反應腔2〇之去離子水5〇。 反應腔20包含了在取代/乾燥區21和沖洗區22間的放 置反應晶片之置晶器24。此外，反應腔2〇亦包含有單向流 動裝置25係位於溢流裝置23之下，離去離子水5〇在充滿 冲洗區22時之液面約5〜3〇腿，可提供在沖洗區22中一去 離子水50之單向之流動。其單向流動裝置25中含有一喷霧 嘴26,可控制喷霧嘴在—定肖度下之上升與下降，因此 ----Γ;---^--------------:訂 il.------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 5 492053 經濟部智慧財產局員工消費合作社印製 A7 五、~r~ ~ —— - 疋角度下之上升與下降的單向流動可控制去離子太50之 水平。 ^ 其高流量之絲子水供鮮3G餘贼舰20之底 部，其_在於供應去離子水5〇至反應腔20之沖洗區22 中二其高流量之去離子水供應管30可提供介於30〜70L/min 之高流量來清洗沖洗區22中之晶片40。 、續仍請參考圖一 A〜一 D所示，使用乾燥機台來乾燥晶 片之方法。 如圖A所tf ’ -⑧流量去離子水供應管％係提供一 去離子水兄至反應腔20中。在去離子水5〇充滿沖洗區2〇 狀況下，喷霧區10會先行打開，使置晶器24置入晶片4〇， 接續，喷霧區10才關上。續降低置晶器24，如此，晶片4〇 才能完全浸在沖洗區22之去離子水50中。接著，於喷霧區 1〇中提供有機極性溶劑之蒸氣和惰性氣體至反應腔2〇的取 代/乾燥區21巾。其取代戦區w巾充滿著飽和的有機極 性溶劑之蒸氣和惰性氣體，且有機極性溶劑之墓氣和情性氣 體會溶解於沖洗區22之去離子水％中而形成有機極性溶劑 層5〇0於水面上。持續提供有機極性溶劑之蒸氣和惰 體，如此，取代/乾燥區21 一直處於蒸氣飽和狀態。在持續 經由去離子水供應管30所提供不傷害晶片4〇介於3〇〜7〇 L/min的高歸去軒水下，去軒水％可除去污染物如存 在於晶片40表面之微粒等。另單向流動裝置乃提供約低於 50 L/min之去離子水50。 前所述之有機極性溶劑係含有電子排斥力，其沸點小於 —Γ.—^--------------:訂---------線 (請先閱讀背面之注意事項再填寫本頁) 6 經濟部智慧財產局員工消費合作社印製 492053 A7 --------BZ______ 五、發明說明（） 9〇C且比重小於1，如··曱醇㈣han〇1)、乙醇㈣肪吨、二 異丙醇(isopr叩yl alC0h0l)、丙酮(acet〇ne)、乙鉢(acet〇niiride)、 I’l’l二氯乙烧（l，l，l_trichi〇roethane)等，其具有氡氧美 GOH)、碳氧基(〇0)、鉢基(_CN)、鹵素(_F，_α，七r，$ 基(-Ν〇2)、疊氮基(Ν3)等之官能基存在。其中所述之有機極 性溶劑層5GG形成於去軒水之表層，因所提供的有機極性 溶劑之蒸氣的·表面張力低於去離子水。 接續參考圖一 Β所示，晶片40因升高置晶器％而升至 去#子水液面。在水表面，由於提供過量的去離子水％由 ,反應腔2{)溢流至溢流裝置23中，如此，藉由去離子水5〇 的机動將污染源如微粒等帶走；同時，單向流動裝置％提 ，單向流動以去除存在晶片4G表面最終之污染源如：微粒 等。當持績升南置晶器24時，晶片40會通過有機極性溶劑 層500,在此時，有機極性溶劑的蒸氣會取代晶片4〇表面之 去離子水或濕氣。而當晶片進入具飽和有機極性溶劑的 瘵氣之取代/乾燥區21時，有機極性溶劑的蒸氣取代晶片4〇 表面之去離子水或濕氣。 以上所述之晶片40的沖洗效果之極限取決於去離子水 50之排水和單向流動。 接續，請參考圖一 C所示，因置晶器24持續上升，如 此：晶片40仍在取代/乾燥區21中，此時晶片4〇完全處於 1機極性溶_蒸氣和純性氣體的環境巾。喷_ 1〇持續 提，飽和之有機極性溶劑的蒸氣和鈍性氣體，所以，有機極 的洛氣可完全取代晶片4〇表面之去離子水或濕氣。 __— —_ 7 本紙張尺度適財關家蘇（CNS)A4規----— —"·「—.-------------「訂；--------^9— (請先閱讀背面之注音？事項再填寫本頁}492053 Printed A7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () So, the deionized water flows unidirectionally to the unidirectional flow device, and then continues. The third step is to lift the original deionized water solution. The wafer to the replacement / drying area, so that the organic polar solvent gas in the replacement / drying area can replace the deionized water and moisture on the wafer, wherein the spray chamber is for the organic Polar solvent gas and inert gas. Finally, the fourth step is to dry the wafer. The spray chamber only supplies the inert gas in the replacement / drying zone to remove the adsorbed gas on the wafer. Organic polar solvent gas. Brief description of the drawings: FIG. 1A is a schematic cross-sectional view of washing the wafer with deionized water in a dryer and forming an organic polar solvent gas in the replacement / drying zone 21 in the embodiment. Fig.-B is a schematic cross-sectional view of the cap wafer moved to the level of deionized water to remove the pollution source in this embodiment. Figure-C is a singular view of the cross section of the example where the wafer is moved to the replacement / drying area so that the organic poles! D Lin Shiguan towel was taken from Echi as a base silk body to show the cross-sectional schematic diagram of the surface of the wooden sunscreen. Description of drawing number: io-spraying area 21-replacement / drying area 23-overflow device 25-unidirectional flow device 30-deionized water supply pipe 20_reaction chamber 22_rinsing area 24_crystal setting device 26_spray Mouth 40-chip II —fr n —l > HI 1 IIIIC Please read the precautions on the back before filling out this page) — I-Order-ί — ”---- Line · --- This', Zhang scale Lai China jg standard (cns) a4 specifications (21〇X 297 public 492053 Α7 Β7 500-organic polar solvent layer V. Description of the invention) (50) Deionized water name detailed description: The present invention will provide an example and Figures A through D are cross-sectional schematic diagrams of the method for drying wafers in the embodiment of the present invention. First, referring to FIG. 1, the drying wafer machine in the embodiment of the present invention includes a spray gun. The mist zone 10, a reaction chamber 20 and a high-flow deionized water supply pipe 30. The spray zone 10 is located above the reaction chamber 20, and its role is to supply organic polar solvents and inert gases to the reaction chamber 20 In addition, there is a switch control in the spray area 10, and the reaction chamber can also be put into / out of the wafer 40. The reaction chamber 20 is composed of a substitution / drying zone 21 and a flushing zone 22. The substitution / drying zone 21 contains vapors of organic polar solvents and inert gases, and the vapors of organic polar solvents are from the spraying zone 10. The flushing zone 22 can supply deionized water 50 from the deionized water supply pipe 30. The replacement / drying zone 21 and a flushing zone 22 are defined by an overflow device 23, and the overflow device 23 can accommodate an overflow reaction. Deionized water 50 in the chamber 20. The reaction chamber 20 includes a crystallizer 24 for placing a reaction wafer between the replacement / drying zone 21 and the washing zone 22. In addition, the reaction chamber 20 also includes a unidirectional flow device 25 It is located under the overflow device 23, and the deionized water 50 has a liquid level of about 5 to 30 legs when it fills the washing area 22, and can provide a one-way flow of deionized water 50 in the washing area 22. The one-way flow device 25 contains a spray nozzle 26, which can control the rise and fall of the spray nozzle under the definite angle, so ---- Γ; --- ^ ---------- ----: Order il .------ line (please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 492053 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 Five, ~ r ~ ~ ——-The unidirectional flow of rising and falling under the angle of 疋 can control the level of deionization too 50. ^ Its high-flow silk water supply At the bottom of the fresh 3G Yu Zei Ship 20, it is to supply deionized water 50 to the flushing zone 22 of the reaction chamber 20. The high flow rate of the deionized water supply pipe 30 can provide a high flow rate between 30 and 70 L / min. To clean the wafer 40 in the rinse zone 22. Continued, please refer to Figures A to D, and use a dryer to dry the wafer. As shown in FIG. A, the tf'-⑧ flow rate deionized water supply pipe% provides a deionized water brother to the reaction chamber 20. When the deionized water 50 fills the rinse area 20, the spray area 10 will be opened first, and the wafer setter 24 will be placed in the wafer 40. Then, the spray area 10 is closed. Continue to lower the setter 24 so that the wafer 40 can be completely immersed in the deionized water 50 of the rinse zone 22. Next, in the spraying zone 10, steam and an inert gas of an organic polar solvent are provided to the replacement / drying zone 21 of the reaction chamber 20. It replaces the towels in the water area, filled with saturated organic polar solvent vapor and inert gas, and the organic polar solvent grave gas and emotional gas will be dissolved in the deionized water% of the washing area 22 to form an organic polar solvent layer. 0 on the water. The vapor and inerts of the organic polar solvent are continuously supplied, so that the replacement / drying zone 21 is always in a vapor-saturated state. Under the condition that the water supplied by the deionized water supply pipe 30 does not damage the wafer 40, which is between 30 and 70 L / min, the water can remove contaminants such as particles existing on the surface of the wafer 40. Wait. Another one-way flow device provides deionized water 50 below about 50 L / min. The organic polar solvents mentioned above contain electron repulsive force, and their boiling point is less than -Γ.-^ --------------: order --------- line (please first Read the notes on the back and fill out this page) 6 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 492053 A7 -------- BZ______ V. Description of the invention () 90 ° C and the proportion is less than 1, such as ... Alcohol (1), ethanol (1%), ethanol (1%), diisopropanol (isopr) (AlCl0h0l), acetone (aceton), aceton (iron), 1'l'l dichloroethane (l, l , L_trichioroethane), etc., which has gadoxol (GOH), carboxy (〇0), hydrazone (_CN), halogen (_F, _α, hepta, $ group (-N〇2), azide (N3) and other functional groups exist. The organic polar solvent layer 5GG is formed on the surface layer of dexuan water, and the surface tension of the vapor of the organic polar solvent provided is lower than that of deionized water. As shown, the wafer 40 rises to the de-water level due to the increase of the crystallizer percentage. On the water surface, due to the excess of deionized water, the reaction chamber 2 {) overflows into the overflow device 23, In this way, by manipulating 50 Transfection source such as fine particles away; the same time, unidirectional flow means mention%, unidirectional flow to remove the present pollution of the final surface of the wafer, such as 4G: fine particles. When the performance rises to the south, the wafer 40 will pass through the organic polar solvent layer 500. At this time, the vapor of the organic polar solvent will replace the deionized water or moisture on the surface of the wafer 40. When the wafer enters the substitution / drying zone 21 of the radon gas with a saturated organic polar solvent, the vapor of the organic polar solvent replaces the deionized water or moisture on the surface of the wafer 40. The limit of the washing effect of the wafer 40 described above depends on the drainage and unidirectional flow of the deionized water 50. Continuing, please refer to FIG. 1C, because the setter 24 continues to rise, so: the wafer 40 is still in the replacement / drying zone 21, and at this time the wafer 40 is completely in the environment of a polar solvent, vapor and pure gas. towel. Spraying_10 continues to lift, saturated organic polar solvent vapor and inert gas, so the organic pole can completely replace the deionized water or moisture on the surface of the wafer 40. __— —_ 7 This paper is compliant with CNS A4 Regulations —————— " · "—.-------------" Order; ---- ---- ^ 9— (Please read the Zhuyin on the back? Matters before filling out this page}
49205J 經濟部智慧財產局員工消費合作社印製 A7 —---------------Β7__ 五、發明說明（） "~ '一— 而在境中，晶片4〇上有機極性溶劑的蒸氣吸附和脫附 ^著平雜_。其有機極性溶綱蒸氣和離氣體亦維持 分子數量上之平衡。而取代/乾燥區21 一直維持飽和之有機 極性溶劑的蒸氣直至所述取代完成。如此，在I氣存在下完 成取代後，有機極性溶劑的蒸氣中，晶片4〇 :周的面積: 吸附了共彿混和物。 、 茶考圖- D所示，隨著有機極性溶躺蒸氣的吸附和脫 附，，達到平衡狀悲，喷霧室1Q便停止供應有機極性溶劑 的瘵氣且取代/乾燥區21僅有鈍性氣體之供給。此時，因平 衡傾向於脫附(1^0^細3 1^)，如此，由於有機極性溶劑 的蒸氣完全吸附於晶片40上時，所以，·晶片4〇便可完全乾 燥。由於，在此時所提供的鈍性氣體的溫度太高，而在沖洗 區22中之去離子水50會先形成蒸氣後，再凝結至晶片40 上，因此，在此其鈍性氣體之溫度需低於骱它，最好介於 20至80°C之間。 、 接繽，在晶片40乾燥後，將喷霧室1〇打開退出晶片。 刚所述本發明的乾燥晶片之方法不會有晶片造成傷害 之問題或是機器本身產生之微粒，因在本發明實施例中之乾 燥器中不使用習知技術中之旋轉盤。 更詳細的說，本發明中乾燥晶片之方法係在室溫下產生 有機極性軋體而非如傳統之kimmon dryer機台使用溫度超 過、、、勺200 C形成南溫氣體產生器，因此，本發明不會有火災 的危險。而且在本發明中係從機器上方而非機器下方提供有 機極性溶劑的蒸氣，如此，微粒因重力的關係更容易去除。 本纸張尺度適用中國國家標準（CNS)A4規格咖χ 297公髮1-------- .!*^ --------:訂 i'l·------ (請先閱讀背面之注意事項再填寫本頁) A7 A7 經濟部智慧財產局員工消費合作社印製 發明說明（ =發明中乾燥⑼之方法在室溫下形成有機極性氣體，亦 於如：去除晶片上光阻之B〇E濕式_製程中。 ^時，乾料狀方法仙CFM Ine //>s1雜之傳統乾 _在不義晶片情況下除水，係戦絲混合物以取代存 f於^表面之去離子水。此時，在乾燥情況中其晶片表 2、去離子水和二異丙醇(IPA)為關鍵因素。當晶片表面無法 j供依理想表面而呈現不穩定情科，去離子水將無法除 去。但本發明中乾燥晶片之方法可提供一可靠的乾燥方式。 雖然乾燥方法所形成之共沸混合物的沸點高於去離子水在 共沸混合物中之沸點，但本發明能可有效的除去吸附在晶片 表面的有機極性溶劑蒸氣，因本發明係依Le，Chatdier平衡 定律而非加熱方式除去所述蒸氣。依上所述，本實施例步驟 中，需加熱’因此’便不會有防火的考量或侵钱光阻圖案的 門題此外’其本貝施例之乾餘機與習知技術中所使用CFM Inc.公司製作之乾職之不同點在於，其去離子水位於晶片 下方且晶片四周僅有乾燥氣體的存在。本中 片的，中，當抬升晶片時，乾燥之蒸氣、鈍性氣體 子水療氣會同畴在環境巾。目此，為轉其乾縣體吸附 之平衡狀態，噴霧室10需持續提供乾燥氣體。 本發明所述之參考例子係在特定領域中之特定實施 例，因此熟知此技藝的人士應能明瞭本發明要義所在，進行 適當、些微的調整和應用，仍將不失本發明之要義所在。 接縯的申請專利範圍中係包含在本發明中所有此類的 應用、調整。 、 -------: — ^--------------:訂 i、------線 (請先閱讀背面之注意事項再填寫本頁) 度適用中國國家&㈣)A4i (210 x 297 公釐）49205J Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 —--------------- Β7__ 5. Description of the invention () " ~ '一 — And in the realm, on the chip 40 Vapor adsorption and desorption of organic polar solvents. Its organic polar solvent vapor and ionizing gas also maintain a balance in the number of molecules. The substitution / drying zone 21 maintains the vapor of the saturated organic polar solvent until the substitution is completed. In this way, after the substitution is completed in the presence of I gas, in the vapor of the organic polar solvent, the area of the wafer 40: week: the co-fossil mixture is adsorbed. As shown in Figure D of the tea, as the adsorption and desorption of organic polar dissolved vapors reaches equilibrium, the spray chamber 1Q stops supplying radon gas from organic polar solvents and the replacement / drying zone 21 is only dull. Supply of sexual gases. At this time, the balance tends to be desorbed (1 ^ 0 ^ fine 3 1 ^), so that when the vapor of the organic polar solvent is completely adsorbed on the wafer 40, the wafer 40 can be completely dried. Because the temperature of the inert gas provided at this time is too high, and the deionized water 50 in the rinse zone 22 will first form a vapor and then condense to the wafer 40, the temperature of the inert gas is here It should be lower than that, preferably between 20 and 80 ° C. Then, after the wafer 40 is dried, the spray chamber 10 is opened to eject the wafer. The method for drying wafers of the present invention just mentioned does not have the problem of damage caused by the wafers or particles generated by the machine itself. Because the dryer in the embodiment of the present invention does not use the rotating disk in the conventional technology. In more detail, the method for drying wafers in the present invention is to produce an organic polar rolling body at room temperature instead of using a conventional kimmon dryer machine at a temperature exceeding 200 ° C to form a South Temperature gas generator. Therefore, the present invention There is no danger of fire. Moreover, in the present invention, the vapor of the organic polar solvent is provided from above the machine rather than below the machine, so that the particles are more easily removed due to the relationship of gravity. This paper size applies to China National Standard (CNS) A4 size coffee 297 publish 1 --------.! * ^ --------: Order i'l · ----- -(Please read the precautions on the back before filling out this page) A7 A7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed a description of the invention (= The method of drying and drying in the invention forms organic polar gases at room temperature, and also removes: BOE wet-type photoresist on the wafer _ in the process. At the time, the dry material method CFM Ine // &s; s1 mixed traditional dry _ in the case of unjust wafers, remove the water and replace the f Deionized water on the surface. At this time, the wafer table 2, deionized water, and diisopropanol (IPA) are the key factors in the dry condition. When the wafer surface cannot be provided according to the ideal surface, it appears unstable. Deionized water cannot be removed. However, the method for drying wafers in the present invention can provide a reliable drying method. Although the boiling point of the azeotrope formed by the drying method is higher than the boiling point of deionized water in the azeotrope, The invention can effectively remove the organic polar solvent vapor adsorbed on the surface of the wafer, because the present invention is based on Le, Chatdi er balance law instead of heating to remove the steam. According to the above, in the step of this embodiment, heating is needed, so there will be no fire prevention considerations or the invasion of the photoresist pattern. In addition, its bebesch The difference between the dry machine of the example and the work done by the CFM Inc. company used in the conventional technology is that the deionized water is located below the wafer and only the dry gas is present around the wafer. When the wafer is lifted, the dry steam and the inactive gas will be in the same environment towel. For this reason, in order to transfer the equilibrium state of the dry body adsorption, the spraying chamber 10 needs to continuously provide the dry gas. Reference examples described in the present invention It is a specific embodiment in a specific field, so those skilled in the art should be able to understand the essence of the present invention, and make appropriate and slight adjustments and applications without losing the essence of the present invention. All such applications and adjustments included in the present invention. -------:-^ --------------: Order i, ------ line (Please read the notes on the back before filling this page) Home & ㈣) A4i (210 x 297 mm)