JP2002231685A - Wafer-cleaning and drying device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer-cleaning and drying device for simply and easily executing manufacturing and drying processes with one device, during the manufacturing process of a semiconductor device. SOLUTION: The wafer-cleaning and drying device includes a cleaning zone 10 for cleaning a wafer, and a drying zone 20 that is moved horizontally by a gap rail 40, for separating and connecting the washing zone and has a spray module 22 at the upper section. The cleaning zone 10 comprises a high-flow module 12 and a one-way stream module 14 for supplying a cleaning liquid or demineralized water, and a paste drain module 16 for discharging the cleaning liquid or the demineralized water, thus cleaning and rising the wafer. Also, the dry zone 20 accommodates the vapor of a polar organic solvent supplied from the spray module 22 and an inert carrier gas for drying the wafer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for cleaning and drying a wafer, and more particularly to a method for cleaning and drying a wafer in a semiconductor device in a simple and easy manner. The present invention relates to an apparatus for cleaning and drying a wafer that can be implemented.

[0002]

2. Description of the Related Art In general, not only a semiconductor manufacturing process, but also a liquid crystal display (LCD) and a wafer substrate manufacturing process, a wafer cleaning process and a wafer drying process are essential processes. Usually, the wafer cleaning process is performed by a cleaning b
ath), and the wafer drying process uses a dryer.

In the wafer cleaning process, particles and metallic impurities generated during the transfer process are used.
mpurity), a process to remove contaminants such as native oxide, etc., after filling the cleaning solution with a cleaning solution, put the wafer in the cleaning solution to remove these contaminants, This is a step of rinsing using water or the like.

[0004] After the completion of the cleaning step, the wafer is transferred to a dryer in order to remove pure water and moisture existing in the wafer, and then a drying step is performed. As described above, in the existing method, the wafer cleaning step and the wafer drying step are performed by separate equipment.

Further, as a dryer for drying a wafer, there are a spin dryer and a Kimon dryer.
(kimmon dryer) is widely used. However, the method of drying a wafer using a rotary dryer uses centrifugal force due to the rotation of a rotating plate, but the physical force generated when the wafer rotates may only damage the wafer. In addition, there is a problem that the rotation of the rotating plate generates particles in the mechanical part and contaminates the wafer.

[0006] Further, a method of drying a wafer using a Kimon dryer is provided with a polar organic solvent (polar organic solvent) provided with a steam generator.
organic solvent) isopropyl alcohol (Isopropyl
Alcohol (IPA) is heated to about 200 ° C. or more to vaporize it, and pure water and moisture existing on the surface of the wafer are replaced with isopropyl alcohol vapor, and the wafer is dried using heated nitrogen (hot N ₂ ).

[0007]

However, the method of drying a wafer using this Kimon dryer has a high risk of fire because the ignition point of isopropyl alcohol is about 22 ° C. However, there is a problem that the dryer itself is contaminated by a photoresist pattern on the wafer due to the use of the photoresist pattern.

[0008] On the other hand, 'STEAG' is a US patent, NO. 55
6930, Oct. 29, 1996 ', a wafer dryer was introduced. This dryer was initially lifted using a blade with the carrier of the supporting device supporting the wafer, and the dried part was dried. Since the hood is detached from the supporting device, it is essential to install a guide for supporting the wafer detached by the blade in addition to the steam supply in the hood.

Therefore, the internal device becomes complicated, and if the carrier is not aligned with the guide, the wafer may be damaged when the blade is lifted by the blade.
It is actually occurring frequently.

[0010] In addition, since the dryer must use a blade to raise the wafer above the water surface, the wafer may be chipped.
Wafer flat zone or notch
Since the ch) portion must not touch, wafer alignment is always required.

Further, since the hood is positioned above the bathing hood through the vertical movement, it is difficult to maintain a predetermined interval between the bathing hood and the hood, and the support device and the guide in the hood are aligned. Is likely to change.

If the wafers are not aligned as described above, there is a problem that the wafer is damaged. Further, in this dryer, since pure water is supplied from a pipe located at the central portion at the lowermost end of the bath, a vortex is generated, and a portion interfered by the blade is generated, so that rinsing is not efficient.

Further, in this dryer, the distance between the hood and the container is wide at 2-3 mm, so that a large amount of IPA vapor is discharged to the outside of the equipment, and at the same time, carrier gas or IPA is discharged from the hood.
When no steam is emitted, external particles flow into the container,
It is likely to be attached to the wafer.

Further, since the dryer of 'STEAG' is composed of a supporting device for fixing the wafer and a blade for drying the wafer, its structure becomes complicated, the maintenance and management of the equipment becomes complicated, and after the drying of the wafer, Since the blade and the supporting device are in pure water, if the slow drain is not performed while additionally supplying IPA vapor, the process time is 10 minutes because the blade and the supporting device are not completely dried. It is inevitable.

Accordingly, it is an object of the present invention to provide a wafer cleaning and drying apparatus in which a wafer cleaning step and a drying step can be easily and easily performed by one apparatus during a semiconductor device manufacturing process. .

[0016]

According to the present invention, there is provided a wafer and cleaning apparatus for cleaning a wafer, comprising: a cleaning zone for cleaning a wafer; A drying zone provided with, separating these zones between said drying zones,
It is characterized by including a gap rail to be connected.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a configuration diagram of a wafer cleaning and drying apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a wafer cleaning and drying apparatus according to the present invention includes a cleaning zone for cleaning a wafer (50).
(10), which is horizontally moved by the gap rail (40) to be separated and combined with the washing zone (10), and includes a drying zone (20) provided with a spray module (22) on the upper side. .

The washing zone (10) includes a high flow module (12) for supplying a washing liquid or pure water and a one-way module.
It comprises a stream module (14) and a paste drain module (16) for quickly draining a cleaning liquid or pure water, and has a function of cleaning and rinsing the wafer (50).

In the cleaning zone (10), when cleaning the wafer (50), the conductivity of pure water is measured, and if a non-resistance value equal to or higher than a predetermined value is maintained for a predetermined time, the cleaning zone is automatically set. A conduit (18) is provided to allow a change to the replacement and drying stage.

The high flow module (12) is provided at the bottom of the cleaning zone (10) and serves to supply a cleaning solution or pure water to the cleaning zone (10).
In order to activate the washing and rinsing action of (50), a washing solution or pure water is supplied to the high flow module at 30 to 70 / min.

[0023] One-way stream module (14)
Is located 5 to 30 mm below the upper end of the cleaning zone (10), and allows the cleaning liquid or pure water filled in the cleaning zone (10) to flow in one direction to one side. In addition, the one-way stream module (14) allows the stream nozzle to be adjusted up and down at a fixed angle, so that the cleaning liquid or pure water does not flow in one direction only in the horizontal direction.

The paste drain module (16)
The cleaning zone (10) is provided at the lower end of the cleaning zone (10), and when the wafer cleaning process is completed, the cleaning solution is quickly removed within about 30 seconds.
Drained completely from, and when the wafer drying process is completed,
The pure water is quickly dried completely from the washing zone (10) within about 30 seconds.

When the wafer cleaning step is first completed in the cleaning zone (10) with the cleaning liquid, the wafer rinsing step with the pure water proceeds secondarily. The conductivity of the pure water is measured, the non-resistance value of pure water is 15 MΩ or more, preferably 15 to 50 MΩ, more preferably 15 to 30 MΩ is maintained for 5 seconds or more, preferably 5 to 60 seconds.
More preferably, if it is maintained for 15 to 30 seconds, it will change to the automatic replacement and drying stage.

The slotter (30) contains a number of wafers (50) and moves up and down between the cleaning zone (10) and the drying zone (20). The slotter (30) containing the wafers (50) that need to be cleaned and dried is located in the cleaning zone (10), and a signal indicating that the wafer rinsing process has been completed is sent from the conductor (18) of the cleaning zone (10). Receiving the drying zone (2
(0) and start moving up and down in the drying zone (20).
When the drying process is completed, the robot returns to the initial position by descending.

The drying zone (20) comprises a first washing zone (10).
When the cleaning liquid is drained and the pure water is supplied to the cleaning zone (10), the cleaning liquid moves horizontally along the gap rail (40) and joins with the cleaning zone (10).

If the cleaning zone (10) is filled with pure water and the wafer rinsing process proceeds, the spray module
(12) supplies the vapor of the polar organic solvent and the inert carrier gas to the drying zone (20) so that the drying zone (20) is saturated with the vapor of the polar organic solvent.

Wafer (50) stored in slotter (30)
However, pure water and moisture existing on the surface of the wafer (50) from the moment of entering the drying zone (20) are removed from the wafer by replacing the organic solvent with vapor of polar organic solvent, and in the last step, the spray module From (12), only the inert carrier gas is supplied, and the wafer is completely dried.

On the other hand, the gap rail (40) has a gap between the washing zone (10) and the drying zone (20) of 0.5 mm or less,
Desirably control it to be 0.1 to 0.5 mm,
Pure water supplied to the washing zone (10) overflows (ove
r flow).

FIGS. 2A to 2D are cross-sectional views of the apparatus for explaining a wafer cleaning and drying method using the apparatus of FIG.

Referring to FIG. 2a, with the washing zone (10) and the drying zone (20) separated, particles generated during the transfer process, metallic impurities (metallic impurit).
y), multiple wafers (50) in slotter (30) to remove contaminants such as native oxide
Containing the washing liquid through the high flow module (12).
(60) is supplied to the cleaning agent.

In the above, the high flow module (1
2) Cleaning solution (60) to the extent that alignment of wafer (50) is not lost
Is continuously supplied at a rate of 30 to 70 L / min to maximize the effect of removing contaminants present on the surface of the wafer (50).

On the other hand, the cleaning liquid (60) is supplied at a flow rate of about 50 L / min or less even through the one-way stream module (14). Maximize the effect of pollutant removal together with the module (12). The one-way stream module (14) allows the stream nozzle to be adjusted up and down at a certain angle, eliminating the flow of cleaning liquid and pure water in one direction only in the horizontal direction, and maximizing the effect of removing contaminants. I do.

Further, the cleaning liquid (60) continuously supplied to the cleaning zone (10) is drained to the overflow through the upper end of the cleaning zone (10). The contaminants away from the chamber will exit the cleaning zone (10) together with the cleaning liquid (60).

Referring to FIG. 2b, when the wafer cleaning step with the cleaning liquid (60) is completed, the cleaning liquid (60) is quickly drained from the cleaning zone (10) through the paste drain module (16), and Pure water is supplied to the cleaning solution through the high flow module (12), and the wafer rinsing process proceeds.

The drying zone (20) comprises a first washing zone (10).
Cleaning water (60) is drained from pure water (70)
Is supplied to the washing zone (10), the gap rail (4
It moves horizontally along 0) and joins the washing zone (10).

When the cleaning zone (10) is filled with the pure water (70) and the wafer rinsing process is performed, the spray module (12) is heated with the vapor of the polar organic solvent (80) and the inert carrier.
The gas (90) is supplied to the drying zone (20) so that the drying zone (20) is saturated with the vapor of the polar organic solvent (80).

The polar organic solvent (80) dissolves in the pure water (70) and forms a polar organic solvent layer (82) on the water surface.

The vapor of the polar organic solvent (80) and the inert carrier gas (90) are continuously supplied so that the drying zone (20) remains saturated.

In the above, the high flow module (1
2) Use pure water (70) to the extent that the alignment of the wafer (50) is not lost.
Supply continuously at 30 to 70 L / min to maximize the effect of removing contaminants present on the surface of the wafer (50).

On the other hand, the cleaning liquid (60) is supplied at a flow rate of about 50 L / min or less even through the one-way stream module (14). Maximize the effect of pollutant removal together with the module (12). The one-way stream module (14) allows the stream nozzle to be adjusted up and down at a fixed angle, eliminating the flow of cleaning liquid and pure water in one direction only in the horizontal direction, and maximizing the effect of removing pollutants. Become

The pure water (70) continuously supplied to the washing zone (10) overflows through a gap formed by a gap rail (40) between the washing zone (10) and the drying zone (20). The contaminants away from the wafer (50), along with the pure water (70), exit the cleaning zone (10).

The polar organic solvent (80) has a boiling point of less than 90 ° C. and a specific gravity of 1 or less.
Are substances containing large functional groups, such as methanol, ethanol, isopropyl alcohol,
Acetone, acetonitrile, 1,1,1-trichloroethane and the like. Here, the functional group includes a hydroxyl group, a carbonyl group, a cyano group, a helide group, a nitro group, an azide group, and the like.

The polar organic solvent layer (82) is formed on the water surface because the vapor of the supplied polar organic solvent (80) has a lower surface tension than pure water (70).

Referring to FIG. 2 c, the conduct (18) provided in the cleaning zone (10) measures the conductivity of the pure water (70) during the wafer rinsing process, and determines whether the pure water Resistance value is 15M
Ω or more, preferably 15-50MΩ, more preferably 15-30M
If Ω is maintained for more than 5 seconds, preferably for 5 to 60 seconds, more preferably for 5 to 30 seconds, it will automatically switch to the replacement and drying stage. That is, the slotter (30) receives a signal from the conduct (18) that the wafer rinsing process is completed, and the wafer (50) floats above the water surface for the first time after ascending movement. At the water surface, pure water overflows outside the washing zone (10) through the gap of the gap rail (40).
While being drained, not only the flow of pure water (70) is induced, but also a one-way flow occurs on the wafer (50), which eventually removes contaminants present on the surface of the wafer (50). Will be.

Further, as the slotter (30) continues to rise, the wafer (50) passes through the polar organic solvent layer (82). At this time, pure water or the like existing on the surface of the wafer (50) is removed. The moisture is replaced by the vapor of the polar organic solvent (80). The wafer (50) enters the drying zone (20) where the vapor of the polar organic solvent (80) is saturated, and pure water and moisture existing on the surface of the wafer (50) are removed from the polar organic solvent (80). Replaced by steam.

The slotter (30) continues to rise to allow the wafer (50) to be in the drying zone (20), where the wafer (50) is vaporized with the polar organic solvent (80) and the inert carrier. Becomes tightly surrounded by gas (90). In order to completely replace pure water and moisture present on the surface of the wafer (50) with vapor of the polar organic solvent (80), the vapor of the polar organic solvent (80) is continuously supplied from the spray module (22). At this time, the inert carrier gas (90) is also continuously supplied, and the vapor of the polar organic solvent (80) is increased and the wafer (5) is supplied.
The absorption and desorption at 0) are maintained in parallel. The vapor of the polar organic solvent (80) and the inert carrier gas (90) are elements that maintain the parallel state. The drying zone (20) is always saturated with the vapor of the polar organic solvent (80) until the replacement is completed, and the wafer (50) in which the replacement is completed and the vapor of the polar organic solvent (80) is adsorbed is completed. In the surrounding area, vapors of the polar organic solvent (80), water vapor, and vapors of an azeotropic mixture thereof will be present.

Referring to FIG. 2d, the polar organic solvent (80) is sprayed from the spray module (22) with the adsorption and desorption mechanisms of the vapor and the organic solvent (80) parallel to the wafer (50). ), The inert gas (90) is supplied to the drying zone (20), and the parallel state moves to the separation direction (Le'Chatelier's law) and is adsorbed on the wafer (50). While removing the vapor of the polar organic solvent (80), the wafer (50) is completely dried. At this time, if the temperature of the inert carrier gas (90) supplied is too high, the pure water (70) in the cleaning zone (10) can evaporate and condense again on the wafer (50). The temperature of the carrier gas (90) is
A temperature range of 80 ° C or lower, preferably 20 to 80 ° C, is appropriate. Thereafter, when the wafer drying process is completed in the drying zone (20), the pure water is completely drained through the paste drain module (16), and the slotter (30) containing the dried wafer (50) is stored. ) Is lowered, and the drying zone (20) is moved horizontally by the gap rail (40) to move the washing zone (1).
0).

[0050]

As described above, the wafer cleaning and drying apparatus according to the present invention enables the wafer cleaning step and the drying step to be performed easily and easily by one apparatus during the manufacturing process of the semiconductor device, and And the yield can be increased.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a wafer cleaning and drying apparatus according to a first embodiment of the present invention.

FIGS. 2A to 2D are cross-sectional views of an apparatus for describing a method of cleaning and drying a wafer using the apparatus of FIG. 1;

[Explanation of symbols]

10; cleaning zone 12; high flow module 14; one-way stream module 16; paste drain module 18; conduct 20; drying zone 22; spray module 30; slotter 40; gap rail 50; wafer 60; Pure water 80; polar organic solvent 82; polar organic solvent layer 90; inert gas

Continuation of the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) F26B 15/12 F26B 15/12 C 21/14 21/14 (72) Inventor Kim Kei-jin Jonggong Apartment 102-208 35-gu, Dongcheon-gu-gu (72) Inventor Kim Deok-ho South Korea Gyeonggi-do Yongin-e, Fengdeok-ri 5-1 Block, Sangro-ku Apartment 612-1403 (72) Inventor Jongpak An An Gwangju-gun, Gyeonggi-do, Republic of Korea Gwangju-eup Mok-e-ri 26-4 Hyundai Gum Tap Naddong 201 F-term (reference) 3L113 AA01 AB02 AC28 AC43 AC45 AC46 AC48 AC54 AC64 AC74 AC76 BA34 CA20 CB25 DA04 DA24

Claims (8)

[Claims] 1. A cleaning zone for cleaning a wafer; a drying zone separated and combined with the cleaning zone and provided with a spray module on the top; a slotter for containing a wafer and moving up and down between the zones; Separating these zones between the washing zone and the drying zone;
A wafer cleaning and drying apparatus comprising a gap rail to be joined. 2. The cleaning zone includes a high flow module and a one-way stream module for supplying a cleaning liquid or pure water; a paste drain module for draining the cleaning liquid or pure water; and a conductivity of the pure water. The wafer cleaning and drying apparatus according to claim 1, wherein the apparatus comprises a conductor. 3. The high flow module is provided on a bottom surface of the cleaning zone, and is provided with a cleaning liquid or pure water at a rate of 30 to 70 / m.
The wafer cleaning and drying apparatus according to claim 2, wherein the wafer is supplied to the cleaning zone in high flow. 4. The one-way stream module is located 5 to 30 mm below the cleaning zone, and allows the cleaning liquid or pure water filled in the cleaning zone to flow in one direction in one direction. The wafer cleaning and drying apparatus according to claim 2. 5. The conduit measures conductivity of pure water during a wafer rinsing process in the cleaning zone, and if a non-resistance value of pure water is maintained in a range of 15 to 50 MΩ for 5 to 60 seconds. ,
3. The wafer cleaning and drying apparatus according to claim 2, wherein a signal is sent to the slotter so that the slotter moves up and down. 6. The drying zone moves along the gap rail when the cleaning liquid is drained from the cleaning zone and pure water is supplied. The wafer cleaning and drying apparatus according to claim 1, wherein the apparatus is combined with the cleaning zone. 7. The spray module according to claim 1, wherein the cleaning zone is filled with pure water, and when a wafer rinsing process is performed, a polar organic solvent vapor and an inert carrier gas are supplied to the drying zone. The wafer cleaning and drying apparatus according to claim 1, wherein 8. The wafer cleaning and drying method according to claim 1, wherein the gap rail has a gap between the cleaning zone and the drying zone in a range of 0.5 to 0.1 mm. apparatus.