五、發明說明（/ ) 發明背景： 技術領域： 機’尤指一種可在半導體 式加工而將晶圓表面上的 本發明係有關於一種晶圓乾燥 裝置製造期間，藉由流體處理或濕 純水或水蒸氣移除的晶圓乾燥機。 相關習知技藝說明： 工在液晶顯示器（LCD)與 圓乾燥機已被使用於移除存 通常，當流體處理或濕式加 晶圓基板製程期間被進行後，晶 在於表面上的純水或水蒸氣。 t半導體製財’ 或輕（k_n)乾燥機 已被廣泛地使闕嶋圓。使用旋轉細_圓乾燥法 的問通為’不僅晶圓可能為晶κ旋轉而產生的物理力所損 傷，且該·亦可能因旋轉盤的旋轉而為機械中所產生的微 :’：!染：另一方面，使用奇蒙(k—)乾燥機的方法係 ，用紐產生設備，將極性有機溶劑的異丙醇（ipa)加教/ 療發至約超過2〇叱’而以異丙醇蒸汽將存在於晶圓表面上 的純水或水减取代，ϋ接著仙減驗晶圓乾燥。然而， 使用^蒙（klmmGn)乾燥機所具有的_為，其具有產生火 災的高可能性’因為異丙醇的迦约22t，若有光阻圖案存 在於晶圓表面上，則該光阻圖案可能被做，因為該方法使 用f溫蒸汽，域_本射Μ驗舰触關案而被 2 472292 經濟部智慧財產局員工消費合作社印製 A7 發明說明（/) 為了解决這些問題，CFM Technologies Research Assodates，Inc.(美國專利第 4,911，761 號，McC_el 等人） 已經提出用於將表面乾燥的製程與設備。使用該乾燥設備的 乾煉方法包含有將異丙醇在5〇至7(rc的溫度蒸發，將晶圓 表面上的水或水蒸氣以向氣性（aer〇tr()pic)混合物取代，而 在未移動晶_情況下將轉&，並融水的溫度將向氣性 (aerotropic)混合物移除，而將晶圓乾燥。然而，在本方法 T ’必須維持穩定的晶圓表面，因為該晶圓係於水面上被乾 餘。因此’其具有無法充分進行乾燥關題，因為基於水的 排出而报難避免水的波動，或者可能產生許多的微粒。再者， 雖然本方法使肖低於奇蒙（ki_Gn)賴機的溫度，但仍有 叙生火災的危險，因為異丙醇的燃點約為22它。 發明之概要： 本發明係⑨法解決上述問題，且本發明之—目的在於提 供-種可在半導體㈣製造_，藉由流體處理或濕式加工 而將晶圓表面上的純水或水蒸氣移除的晶圓乾燥機。 a為了完成上述目的，根據本發明之一種晶圓乾燥機，特 徵在於其包含有—個腔室’該腔室包含—個容納極性有 機溶劑蒸汽與惰性傳輪氣體的取代/乾龍，—個位於該取代 /乾燥區與該洗顏邊界之用於將去離子水排出的溢流單 广，與-細於容納晶圓之上、下移_晶座；—個安裝於 ^ =端的龍區，將極財_!蒸汽與惰性傳輸 ” 、、、5至雜代/乾舰’—個位於該取代/乾燥區；以及一 Μ氏張尺度適用中國^家標準（CNS)A4規格（21Q χ挪公楚丁 ---------1----I -------訂 ----1---線 (請先閱讀背面之注意事項再填寫本頁) 292 292 經濟部智慧財產局員工消費合作社印製 4 A7 _B7__ 五、發明說明（}) 個安裝於該腔室底部之高流量去離子水管件，用於將去離子 水供給至該洗滌區。 圖式之簡要說明： 本發明之上述特性及其他特徵將配合附圖而被說明於下 列說明中，其中： 第1圖為根據本發明之一實施例之晶圓乾燥機構造，其 中第1A圖為水平切過該晶圓乾燥機的剖面圖，而第1B圖為 縱向切過該晶圓乾燥機的剖面圖。 第2A圖至第2D圖為用於說明使用晶圓乾燥機將晶圓乾 燥之方法的剖面圖。 圖號說明： 10-贺灑區 20-腔室 21-取代/乾燥區 22-洗%条區 23-溢流單元 24-晶座 2 5-安裝單向流模組 30-高流量去離子水供給管 50-去離子水 40-晶圓 較佳實施例之細節說明： 本發明現將藉由參考附圖的較佳實施例而被詳細地說 明。 、 第1圖為根據本發明之一實施例之晶圓乾燥機構造，其 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----I--------- --------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 472292 A7 五、發明說明（ 中第1A圖為水平切過該晶圓乾 縱向切過該晶圓乾燥機的剖面圖。/弟1B圖為 II---------a--- (請先閲讀背面之注意事項再填寫本頁) 心ΐ在ιί考第/ 根據本發明的晶圓乾燥機包含有-個 3q〇 " 目腔至2Q ’以及—個高流量去離子水供給管 喷擺區1〇被安裝於腔室20的上方，並用於將極性有機 溶劑f性傳輪供給_ %。再者，倾㈣^ 開啟與_，並可將晶圓4〇裝載於/卸載_空室。 至係由個取代/乾燥區21以及一個洗條區22 所組成。取代/乾燥區21包含由喷灑區10所供給的極性有 機溶劑蒸汽’⑽惰轉輸氣體。洗顏22包含由高流量去 離子水供給管30所供給的去離子水5G。取代/乾燥區21 與洗條區22係以溢流單元23 (去離子水s〇由此溢流至腔室 20外面）為界。 •線· 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 腔室20包含一個用於使晶目4〇在取代/乾燥區21與洗 滌區22之間移動的晶圓傳輪器24。再者，該腔室2〇包含單 向流模組25，其被安裝於溢流單元23下方，亦即位於被填 入洗;條區22之去離子水50表面下方5至30 mm，用於將容 納於洗滌區22中之去離子水5〇進行單向流動。單向流模組 25包含一個可在一固定角度被上、下控制的喷嘴％，以使得 去離子水50可在一固定角度上、下以及水平地單向流動。 高流量去離子水供給管30被安裝於腔室20底部，並用 於供給去離子水50至腔室20的洗滌區22。其亦以30至70公 升/分鐘的高流量供給去離子水50，以便在洗滌區22中加速 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 472292 A7V. Description of the Invention (/) Background of the Invention: Technical Field: The present invention relates to a method for processing wafers on a wafer surface during semiconductor processing. Wafer dryer with water or water vapor removed. Description of related know-how: Liquid crystal display (LCD) and circular dryers have been used for removal and storage. Generally, after the fluid treatment or wet-wafer substrate process is performed, the crystals are on the surface of pure water or water vapor. t Semiconductor Manufacturing 'or light (k_n) dryers have been widely rounded. The problem of using the spinning thin-circle drying method is that 'not only the wafer may be damaged by the physical force caused by the rotation of the crystal κ, but also the micro generated in the machine due to the rotation of the rotating disk:' :! Dyeing: On the other hand, the method of using a Kimon dryer is to use a button generating device to add isopropyl alcohol (ipa), which is a polar organic solvent, to a hairdressing / treatment to a value of more than about 20%. The propanol vapor replaces the pure water or water present on the wafer surface, and then the wafer is dried for inspection. However, the use of a klmmGn dryer has a high probability of causing fire. 'Because of approximately 22t of isopropyl alcohol, if a photoresist pattern exists on the wafer surface, the photoresist The pattern may be made, because this method uses f-temperature steam, and the field _ this shot M inspection ship was touched off the case and was printed by 2 472292 Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumer Cooperative A7 Description of invention (/) In order to solve these problems, CFM Technologies Research Assodates, Inc. (U.S. Patent No. 4,911,761, McCel, et al.) Has proposed processes and equipment for drying surfaces. The dry refining method using the drying equipment includes evaporating isopropyl alcohol at a temperature of 50 to 7 (rc), and replacing water or water vapor on the surface of the wafer with an aerotr () pic mixture, In the case where the crystal is not moved, the temperature of the molten water will be removed to the aerotropic mixture and the wafer will be dried. However, in this method T ', a stable wafer surface must be maintained. Because the wafer is dried on the water surface, it has a problem of insufficient drying, because it is difficult to avoid water fluctuations based on the discharge of water, or many particles may be generated. Furthermore, although this method makes The temperature of Shaw is lower than the temperature of Kimon (ki_Gn), but there is still a danger of fire because the ignition point of isopropanol is about 22. Summary of the invention: The present invention does not solve the above problems, and the invention —The purpose is to provide a wafer dryer that can be manufactured in semiconductor wafers and removes pure water or water vapor from the surface of the wafer by fluid processing or wet processing. A. In order to accomplish the above object, according to the present invention A wafer dryer, features It contains a cavity ', which contains a substitution / dry dragon which contains polar organic solvent vapor and inert wheel gas, and a substitution / drying chamber located at the boundary between the substitution / drying zone and the face wash. The overflow from the water discharge is wide, and it is thinner than the containing wafer, and moves down the wafer seat; a dragon area installed at the ^ = end, which transfers the very wealth _! Steam and inertia. Generation / dry ship'—one located in the replacement / drying area; and one M's scale is applicable to China Standard (CNS) A4 specification (21Q χ Norwegian Gong Chuding --------- 1 --- -I ------- Order ---- 1 --- Line (Please read the notes on the back before filling this page) 292 292 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 A7 _B7__ V. Invention Explanation (}) A high-flow deionized water pipe fitting installed at the bottom of the chamber is used to supply deionized water to the washing zone. Brief description of the drawings: The above characteristics and other characteristics of the present invention will be matched with the drawings. It is illustrated in the following description, wherein: FIG. 1 is a structure of a wafer dryer according to an embodiment of the present invention, and FIG. 1A is a horizontal cut-through A cross-sectional view of a wafer dryer, and FIG. 1B is a cross-sectional view cut through the wafer dryer in a longitudinal direction. FIGS. 2A to 2D are cross-sectional views illustrating a method for drying a wafer using a wafer dryer. Description of drawing number: 10-Hearting area 20-Cavity 21-Replacement / Drying area 22-Washing area 23-Overflow unit 24-Crystal 2 5-Installing unidirectional flow module 30-High flow deionization Detailed description of the preferred embodiment of the water supply pipe 50-deionized water 40-wafer: The present invention will now be described in detail by referring to the preferred embodiment of the accompanying drawings. The wafer dryer structure of the embodiment, the 4 paper sizes of which are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ---- I --------- ------ --Order --------- Line · (Please read the precautions on the back before filling this page) 472292 A7 V. Description of the invention (Figure 1A in the figure shows the horizontal cut through the wafer and the vertical cut through the wafer. Sectional view of a wafer dryer. / Brother 1B picture is II --------- a --- (Please read the precautions on the back before filling out this page) My heart is in ιί the first / The wafer dryer according to the present invention contains- A 3q〇 " mesh cavity to 2Q 'and a high-flow deionized water supply pipe spray area 10 are installed above the chamber 20, and are used to supply a polar organic solvent f sex wheel by _%. In addition, it is possible to load and unload wafers 40 into and out of the empty chamber. The system consists of a replacement / drying zone 21 and a strip washing zone 22. The replacement / drying zone 21 contains a polar organic solvent vapor ' The face wash 22 includes 5G of deionized water supplied from a high-flow deionized water supply pipe 30. The replacement / drying zone 21 and the strip washing zone 22 are bounded by an overflow unit 23 (from which the deionized water so overflows to the outside of the chamber 20). • Line • Printed by the Intellectual Property Office of the Ministry of Economic Affairs and Consumer Affairs Co. The chamber 20 contains a wafer transfer wheel 24 for moving the crystals 40 between the replacement / drying zone 21 and the washing zone 22. Furthermore, the chamber 20 includes a one-way flow module 25, which is installed below the overflow unit 23, that is, 5-30 mm below the surface of the deionized water 50 in the strip area 22, The deionized water 50 contained in the washing zone 22 was unidirectionally flowed. The unidirectional flow module 25 includes a nozzle% that can be controlled up and down at a fixed angle, so that the deionized water 50 can flow unidirectionally at a fixed angle up, down, and horizontally. A high-flow deionized water supply pipe 30 is installed at the bottom of the chamber 20 and is used to supply deionized water 50 to the washing zone 22 of the chamber 20. It also supplies deionized water 50 at a high flow rate of 30 to 70 liters / minute to accelerate in the washing zone 22. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 472292 A7
訂 I 請 先 閱 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 袭 472292 A7 B7 五、發明説明（“）--- 子水5〇係以約低於5〇公升/分鐘的流速，穿經單向流模組b 而被供給。 如上所述’雜性有機溶劑為含有大陰電性之功能基的 材料’其彿點低於9〇°C且比重低於i，諸如甲醇、乙醇、里 丙醇' _ '氰甲烧 ' ⑴‘三氣乙絲，其中該功能基包含 風氧基(-0H)、羰基(_CK))、氰基⑽）、齒素基(-F、_α、 -Br、-I)、方香確基(_Ν〇2)、#氮基⑽。該極性有機溶劑 層5〇〇被形成於水面±，因為所供給的該極性有機溶劑蒸汽 具有較去離子水為低的表面張力。 現在參考第2Β圖，晶圓4〇因晶座％上生而浮置於水面 上。在该水面上，去離子水5〇將穿經溢流單元23而被溢流 排出月工至20外’以便造成去離子水5〇的流動’而將諸如微 粒等〉可染物移除。同時，單向流在單向流模組25中進行，而 將存在於晶® 40表面上之諸如微粒特祕微。由於晶座 2不斷地上升，所以晶圓4〇將穿經極性有機溶劑層500。此 日'’存在於晶® 4Q表社之去離子水或水蒸氣開始為極性有 機溶，蒸汽所取代。由於晶圓4Q進人極性有機溶劑蒸汽為飽 和狀態的該取代/乾燥區21，所以存在於晶圓40表面上之 去離子水或水蒸氣為極性有機溶劑蒸汽所取代。 #在上述中，晶圓40的洗滌效果將因去離子水50的排出 及單向流而被增加。 現在參考第2C圖，晶座24不斷地上升，以使得晶圓4〇 可存在於該取代/乾燥區21中。在此時，晶圓4〇完全為極 I1有枚’谷训蒸Ά及惰性傳輪氣體所環繞。該極性有機溶劑蒸 本紙張尺度^__ (請先聞讀背面之注意事項再填寫本頁) 'π 綵 經濟部智慧財產局員工消費合作社印製 472292 A7 _____B7 五、發明説明（” "'~~ 汽及惰性傳輸氣體不斷地由喷灑區10供給，以使得存在於曰 圓40表面上之去離子水或水蒸氣完全為極性有機溶劑蒸= 所取代。因此，極性有機溶劑蒸汽的吸附至/解吸附自晶圓4〇 被維持在一平衡狀態。極性有機溶劑蒸汽及惰性傳輸氣體為 維持平衡狀態的要素。該取代/乾燥區21在;^代完成為1 I前皆因極性有機溶劑蒸汽而總是維持在飽和狀態。在取代完 成後，在極性有機溶劑蒸汽吸附於其上之晶圓4〇的周圍區= 中，存在有水氣與向氣性Uerotropic)混合物的蒸汽。 現在參考第ZD圖，藉由極性有機溶劑蒸汽在平衡狀態的 吸附至/解吸附自晶圓4〇，來自噴麗區1〇的極性有機溶劑蒸 汽供給被終止，而僅有惰性傳輪氣體被供給至該取代/乾燥 區21中。因此，該平衡狀態傾向解吸附（Le，Chateiw定律）， 贿得當謂在晶圓4〇上的極性有機溶劑蒸汽被移除時，晶 圓40完全乾燥。此時，若所供給的惰性傳輸氣體溫度太高， 則由於洗滌區22中的去離子水50可被蒸發並可再次被凝固 於晶圓40上，所以該惰性傳輸氣體的溫度偏好低於8〇艽， 偏好為20至80。(：。 其次，藉由開啟喷灑區1 〇，而將完成乾燥的晶圓4〇卸載。 如上所述’本發明的晶圓乾燥機並無晶圓損傷或在機械 中產生微粒的問題，因為相較於慣用的旋轉乾燥機，其並不 含有轉盤。再者’由於本發明並不使用轉盤，所以其可縮小 該設備的尺寸，因而當其在未來用以組成3〇〇咖尺寸之晶 圓用的設備時，將可解決空間的難題。 此外’相較於慣用的奇蒙（kimm〇n)乾燥機，本發明的 _ 8 氏 ^ )A4im --—-- (請先閱讀背面之注意事項再填寫本頁) 訂 —笨------ 472292 經濟、部中央標準局員工消費合作社印製 A7 '—*-----Β7 五、發明説明（f ) " ~ ' 晶圓乾燥機將在室溫下產生極性有機溶劑蒸汽，❿無須使用 、'、勺H 200 C的向溫蒸汽產生設備。'因此，本發明將排除火 火的危險再者’在本發明中，由於該極性有機溶劑蒸汽係 由上半部供給’而非由下半部供給，所以可藉由重力而輕易 地進行微粒的移除。再者，本發明的乾燥機係於室溫下使用 極性有機輔蒸汽，所以其可被顧麟如雜劑存在 圓中的BOE濕式蝕刻製程。 、 同時’慣用的乾燥機（CFM公司製造）係於晶圓未移動 的情況下，藉由排放去離子水，而以向紐（ae她叩⑹混 合物取代存在於晶®表面上的去離子水。此時，由晶圓、去 離子水以及異丙醇（IPA)所組成的管月_在乾燥條件中擔 當重要时。若去離子水被·，動於水表面將變得不釋 定而無法職理想的彎月面，_不會產生贿的可紐極 尚。然而，由於本發明的乾燥機採用在水面上洗條晶圓的方 法’所以可能產生更穩定的乾燥。雖然使用向氣性(_廿响） 混合物的乾燥具有較去離子水沸點更高的彿點，但是本發明 可有效地將吸附於晶圓表面上的極性有機溶劑蒸汽乾燥，因 為係使用Le’Chatelier的平衡定律，而非使用加熱的方法。再 者，由於本發明並不加熱，所以並無發生火災危險或光阻圖 案遭侵韻之問題。此外，考慮本發明之乾燥機與慣用之乾燥 機（CFM公司所製造之侧的乾燥機）之間的差異，由於去 離子水較低，所以所暴露的晶圓僅為經乾燥的蒸汽所園繞。 然而’在根據本發明之乾燥機的狀況中，經乾燥麟汽了 性傳輸氣體以及去離水的蒸汽共存於被暴露的部位;因^ _______9 本紙張尺( CNS ) Λ4祕 -------4衣— (請先閱讀背面之注意事項再填寫本頁)Order I Please read the precautions on the back before filling out this page. 472292 A7 B7 V. Description of the invention (")-Zishui 50 is passed through a unidirectional flow mold at a flow rate of less than 50 liters per minute. Group b is supplied. As described above, 'a heterogeneous organic solvent is a material containing a large cathodic functional group' whose Buddha point is lower than 90 ° C and the specific gravity is lower than i, such as methanol, ethanol, propylene glycol ' _ 'Cyanomethan' ⑴ 'Sanqi Yisi, where the functional group includes wind oxy (-0H), carbonyl (_CK), cyano fluorene), haloyl (-F, _α, -Br,- I), Fang Xiangji (_NO2), #nitrogen radical. The polar organic solvent layer 500 is formed on the water surface ± because the supplied polar organic solvent vapor has a lower surface than deionized water Tension. Now referring to FIG. 2B, the wafer 40 floats on the water surface due to the epitope of the wafer. On this water surface, the deionized water 50 will pass through the overflow unit 23 and be discharged by the overflow to the monthly work. 20 outside 'in order to cause the flow of deionized water 50' to remove dyeable materials such as particles, etc. At the same time, unidirectional flow is performed in the unidirectional flow module 25, and There will be special particles such as particles on the surface of Crystal® 40. As the wafer 2 continues to rise, the wafer 40 will pass through the polar organic solvent layer 500. Today `` exists in Crystal® 4Q Watch Co. Ionic water or water vapor begins to be polar organic solvents, and the steam is replaced. Since the wafer 4Q enters the replacement / drying zone 21 where the polar organic solvent vapor is saturated, the deionized water or water existing on the surface of the wafer 40 The vapor is replaced by a polar organic solvent vapor. # In the above, the cleaning effect of the wafer 40 will be increased by the discharge of the deionized water 50 and the unidirectional flow. Now referring to FIG. 2C, the wafer seat 24 is continuously raised to So that the wafer 40 can exist in the replacement / drying zone 21. At this time, the wafer 40 is completely surrounded by the pole I1 and the inert transfer gas. The polar organic solvent steams the paper Dimensions ^ __ (Please read the notes on the back before filling out this page) 'π Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 472292 A7 _____B7 V. Description of the invention (""' ~~ Steam and inert transmission gas continue The ground is supplied by the spraying area 10 so that The deionized water or water vapor existing on the surface of the circle 40 is completely replaced by the polar organic solvent vaporization. Therefore, the adsorption / desorption of the polar organic solvent vapor from the wafer 40 is maintained in an equilibrium state. The polar organic The solvent vapor and the inert transport gas are the elements for maintaining the equilibrium state. The substitution / drying zone 21 is always maintained in a saturated state due to the polar organic solvent vapor before the ^ generation is completed. After the substitution is completed, the polar organic Solvent vapor is adsorbed on the surrounding area of the wafer 40, and there is a vapor of a mixture of water vapor and gaseous Uerotropic. Referring now to Figure ZD, the polar organic solvent vapor is absorbed / desorbed from the wafer 40 in the equilibrium state, and the supply of the polar organic solvent vapor from the spray area 10 is terminated, and only the inert transfer gas is removed. It is supplied to the replacement / drying zone 21. Therefore, this equilibrium state tends to desorption (Le, Chateiw's law), and when the polar organic solvent vapor on the wafer 40 is removed, the crystal circle 40 is completely dried. At this time, if the temperature of the supplied inert transport gas is too high, since the deionized water 50 in the washing zone 22 can be evaporated and can be solidified on the wafer 40 again, the temperature preference of the inert transport gas is lower than 8 〇 艽, preference is 20 to 80. (:. Secondly, by opening the spraying area 10, the dried wafer 40 is unloaded. As described above, 'the wafer dryer of the present invention does not have the problem of wafer damage or generation of particles in the machine, Compared with the conventional rotary dryer, it does not contain a turntable. Furthermore, since the present invention does not use a turntable, it can reduce the size of the device, so when it is used to form a 300-cab size in the future When it comes to equipment for wafers, it can solve the space problem. In addition, compared with the conventional Kimmon dryer, the _ 8's of the present invention ^) A4im ----- (Please read the back first Please pay attention to this page and fill in this page again) Order—Stupid ------ 472292 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economy and Labor A7 '— * ----- Β7 V. Description of Invention (f) " ~' Wafer dryers will generate polar organic solvent vapors at room temperature, so there is no need to use, 'H 200 C's directional steam generation equipment. 'Thus, the present invention will eliminate the danger of fire and fire again' In the present invention, since the polar organic solvent vapor is supplied from the upper half 'rather than the lower half, the particles can be easily carried out by gravity 'S removal. Furthermore, the dryer of the present invention uses polar organic auxiliary steam at room temperature, so it can be used in the BOE wet-etching process where Gu Lin, a miscellaneous agent, is present. At the same time, the conventional dryer (manufactured by CFM) is used to replace the deionized water existing on the surface of the crystal by replacing the deionized water with a deaerator mixture when the wafer is not moving. At this time, the tube composed of wafers, deionized water, and isopropyl alcohol (IPA) _ plays an important role in dry conditions. If deionized water is used, it will become indeterminate when moving on the water surface. The ideal meniscus can not be bribed. However, since the dryer of the present invention uses a method of washing wafers on the water surface, it may produce more stable drying. (_ 廿 响) Drying of the mixture has a higher boiling point than the deionized water boiling point, but the present invention can effectively dry the polar organic solvent vapor adsorbed on the wafer surface, because it uses Le'Chatelier's equilibrium law Instead of using a heating method. Furthermore, since the invention does not heat, there is no problem of fire danger or photoresist pattern intrusion. In addition, consider the dryer of the invention and the conventional dryer (CFM Corporation) All Due to the low deionized water, the exposed wafers are only wound by the dried steam. However, in the condition of the dryer according to the present invention, the dried Linqi co-existed gas and steam from the water coexisted in the exposed parts; ^ _______9 This paper ruler (CNS) Λ4 secret ------- 4 clothing-(Please read the precautions on the back before filling in this page)
、1T ~! ---- ---- -- I...... 472292 A7 ----— _ B7 五、發明説明。)~~~ '~~ - 晶圓被因此’為了維持經乾燥氣體被吸附的平衡態， δ玄經乾燥秦汽被連續地由喷麗區供給。 本發明已經參考-配合特定應用的特定實施例而被說 明。具有本技藝之—般技術並接觸本發明之教導的人士將可 辨別落於其範疇中的其他改良與應用。 因此，所附申請專利範圍希冀涵蓋落於本發明之範疇中 的任何及其他該應用、改良與實施例。 -------,---攻------訂------I (請先閱讀背面之注意事項再填寫本頁j 經濟部中央標準局員工消費合作社印袋 本紙張尺度適用中國國家榡準（CNS ) A4規格（210X 297公釐）、 1T ~! ---- -----I ...... 472292 A7 ------ _ B7 5. Description of the invention. ) ~~~ '~~-To maintain the equilibrium state where the dried gas is adsorbed, δ Xuan dried Qin steam is continuously supplied from the spray area. The invention has been described with reference to specific embodiments for specific applications. Those skilled in the art and familiar with the teachings of the present invention will be able to discern other improvements and applications that fall within their scope. Accordingly, the scope of the appended patents is intended to cover any and all such applications, improvements, and embodiments that fall within the scope of the invention. -------, --- Attack ------ Order ------ I (Please read the notes on the back before filling out this page. Paper size applies to China National Standard (CNS) A4 (210X 297 mm)