CN101663737B - 用于晶片无电镀的方法和设备 - Google Patents

用于晶片无电镀的方法和设备 Download PDF

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Publication number
CN101663737B
CN101663737B CN2008800124223A CN200880012422A CN101663737B CN 101663737 B CN101663737 B CN 101663737B CN 2008800124223 A CN2008800124223 A CN 2008800124223A CN 200880012422 A CN200880012422 A CN 200880012422A CN 101663737 B CN101663737 B CN 101663737B
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China
Prior art keywords
platen
wafer
electroless plating
bath
chamber
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CN2008800124223A
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English (en)
Chinese (zh)
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CN101663737A (zh
Inventor
威廉·蒂
约翰·M·博迪
弗里茨·C·雷德克
耶兹迪·多尔迪
约翰·帕克斯
蒂鲁吉拉伯利·阿鲁娜
亚历山大·奥夫恰茨
托德·巴力斯基
克林特·托马斯
雅各布·卫理
艾伦·M·舍普
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Lam Research Corp
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Lam Research Corp
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Publication of CN101663737A publication Critical patent/CN101663737A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemically Coating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008800124223A 2007-04-16 2008-04-14 用于晶片无电镀的方法和设备 Active CN101663737B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/735,987 2007-04-16
US11/735,987 US8485120B2 (en) 2007-04-16 2007-04-16 Method and apparatus for wafer electroless plating
PCT/US2008/004769 WO2008130519A1 (en) 2007-04-16 2008-04-11 Method and apparatus for wafer electroless plating

Publications (2)

Publication Number Publication Date
CN101663737A CN101663737A (zh) 2010-03-03
CN101663737B true CN101663737B (zh) 2013-01-23

Family

ID=39853971

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800124223A Active CN101663737B (zh) 2007-04-16 2008-04-14 用于晶片无电镀的方法和设备

Country Status (6)

Country Link
US (2) US8485120B2 (OSRAM)
JP (1) JP5579054B2 (OSRAM)
KR (1) KR101519674B1 (OSRAM)
CN (1) CN101663737B (OSRAM)
TW (1) TWI435770B (OSRAM)
WO (1) WO2008130519A1 (OSRAM)

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US20140266219A1 (en) * 2013-03-14 2014-09-18 Applied Materials, Inc. Detecting electrolyte meniscus in electroplating processors
US20160149733A1 (en) * 2014-11-26 2016-05-26 Applied Materials, Inc. Control architecture for devices in an rf environment
US9872341B2 (en) 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
IT201800009071A1 (it) * 2018-10-01 2020-04-01 Rise Tech Srl Realizzazione di strutture multi-componente tramite menischi dinamici
CN116213191B (zh) * 2022-09-08 2025-08-12 江西安芯美科技有限公司 一种半导体晶圆点胶装置及其点胶方法

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Also Published As

Publication number Publication date
US8485120B2 (en) 2013-07-16
US20130280917A1 (en) 2013-10-24
JP5579054B2 (ja) 2014-08-27
KR20100020944A (ko) 2010-02-23
CN101663737A (zh) 2010-03-03
TW200906499A (en) 2009-02-16
KR101519674B1 (ko) 2015-05-21
JP2010525166A (ja) 2010-07-22
WO2008130519A1 (en) 2008-10-30
TWI435770B (zh) 2014-05-01
US20080254225A1 (en) 2008-10-16
US9287110B2 (en) 2016-03-15

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