CN101656215B - 横向双扩散金属氧化物半导体晶体管及其制造方法 - Google Patents
横向双扩散金属氧化物半导体晶体管及其制造方法 Download PDFInfo
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/288,836 US8119507B2 (en) | 2008-10-23 | 2008-10-23 | Lateral double-diffused metal oxide semiconductor (LDMOS) transistors |
US12/288,836 | 2008-10-23 |
Publications (2)
Publication Number | Publication Date |
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CN101656215A CN101656215A (zh) | 2010-02-24 |
CN101656215B true CN101656215B (zh) | 2012-10-31 |
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Application Number | Title | Priority Date | Filing Date |
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CN 200910159413 Active CN101656215B (zh) | 2008-10-23 | 2009-07-02 | 横向双扩散金属氧化物半导体晶体管及其制造方法 |
Country Status (2)
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US (2) | US8119507B2 (zh) |
CN (1) | CN101656215B (zh) |
Families Citing this family (59)
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JP5437602B2 (ja) * | 2008-07-29 | 2014-03-12 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
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US9330979B2 (en) * | 2008-10-29 | 2016-05-03 | Tower Semiconductor Ltd. | LDMOS transistor having elevated field oxide bumps and method of making same |
TWI503893B (zh) * | 2008-12-30 | 2015-10-11 | Vanguard Int Semiconduct Corp | 半導體結構及其製作方法 |
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CN102194860B (zh) * | 2010-03-05 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | 绿色晶体管 |
DE102010014370B4 (de) * | 2010-04-09 | 2021-12-02 | X-Fab Semiconductor Foundries Ag | LDMOS-Transistor und LDMOS - Bauteil |
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CN102971855B (zh) * | 2010-06-21 | 2016-02-24 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN101916777A (zh) * | 2010-07-16 | 2010-12-15 | 中颖电子有限公司 | 横向扩散金属氧化物晶体管及静电保护架构 |
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CN102386225B (zh) * | 2010-08-27 | 2013-07-31 | 旺宏电子股份有限公司 | 一种横向双扩散金属氧化物半导体装置及其制造方法 |
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CN103021852B (zh) * | 2011-09-22 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | 高压p型ldmos的制造方法 |
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CN102623354A (zh) * | 2012-04-17 | 2012-08-01 | 上海华力微电子有限公司 | P-ldmos的制造方法 |
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KR20130142789A (ko) | 2012-06-20 | 2013-12-30 | 삼성전자주식회사 | 전력 mos 트랜지스터를 포함하는 반도체 소자 |
CN102790087B (zh) * | 2012-07-18 | 2014-10-29 | 电子科技大学 | 一种具有ESD保护功能的nLDMOS器件 |
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CN111668186A (zh) | 2020-06-08 | 2020-09-15 | 矽力杰半导体技术(杭州)有限公司 | 半导体器件及其制造方法 |
CN111785633B (zh) * | 2020-06-11 | 2022-11-04 | 上海华虹宏力半导体制造有限公司 | Ldmos器件的制备方法和ldmos器件 |
CN112234094B (zh) | 2020-09-29 | 2022-07-29 | 矽力杰半导体技术(杭州)有限公司 | 金属氧化物半导体器件及其制造方法 |
JP2023007804A (ja) * | 2021-07-02 | 2023-01-19 | キヤノン株式会社 | 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、ウェアラブルデバイスおよび画像形成装置 |
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US5173436A (en) * | 1989-11-21 | 1992-12-22 | Texas Instruments Incorporated | Method of manufacturing an EEPROM with trench-isolated bitlines |
JP2981717B2 (ja) * | 1994-09-02 | 1999-11-22 | セイコーインスツルメンツ株式会社 | 半導体集積回路装置 |
US6897525B1 (en) * | 1998-11-26 | 2005-05-24 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP3448546B2 (ja) * | 2000-04-26 | 2003-09-22 | 三洋電機株式会社 | 半導体装置とその製造方法 |
US7163856B2 (en) | 2003-11-13 | 2007-01-16 | Volterra Semiconductor Corporation | Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor |
US7074659B2 (en) * | 2003-11-13 | 2006-07-11 | Volterra Semiconductor Corporation | Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor |
JP2005264270A (ja) * | 2004-03-19 | 2005-09-29 | Honda Motor Co Ltd | クランクシャフト |
US7192834B2 (en) * | 2005-02-23 | 2007-03-20 | Macronix International Co., Ltd | LDMOS device and method of fabrication of LDMOS device |
TW200741892A (en) * | 2006-03-02 | 2007-11-01 | Volterra Semiconductor Corp | A lateral double-diffused MOSFET (LDMOS) transistor and a method of fabricating |
US8138049B2 (en) | 2009-05-29 | 2012-03-20 | Silergy Technology | Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices |
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