CN101652867B - 光伏器件及其制造方法 - Google Patents

光伏器件及其制造方法 Download PDF

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Publication number
CN101652867B
CN101652867B CN2008800113623A CN200880011362A CN101652867B CN 101652867 B CN101652867 B CN 101652867B CN 2008800113623 A CN2008800113623 A CN 2008800113623A CN 200880011362 A CN200880011362 A CN 200880011362A CN 101652867 B CN101652867 B CN 101652867B
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substrate
single crystalline
semiconductor layer
semiconductor substrate
crystalline semiconductor
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CN101652867A (zh
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山崎舜平
荒井康行
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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CN2008800113623A 2007-04-06 2008-03-24 光伏器件及其制造方法 Active CN101652867B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007101182 2007-04-06
JP101182/2007 2007-04-06
PCT/JP2008/056254 WO2008126706A1 (en) 2007-04-06 2008-03-24 Photovoltaic device and method for manufacturing the same

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CN101652867A CN101652867A (zh) 2010-02-17
CN101652867B true CN101652867B (zh) 2012-08-08

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US (2) US20080245406A1 (enExample)
EP (1) EP2135295A4 (enExample)
JP (1) JP5070112B2 (enExample)
KR (1) KR101503675B1 (enExample)
CN (1) CN101652867B (enExample)
TW (1) TWI485864B (enExample)
WO (1) WO2008126706A1 (enExample)

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TWI493609B (zh) * 2007-10-23 2015-07-21 Semiconductor Energy Lab 半導體基板、顯示面板及顯示裝置的製造方法
CN101842910B (zh) * 2007-11-01 2013-03-27 株式会社半导体能源研究所 用于制造光电转换器件的方法
KR101608953B1 (ko) * 2007-11-09 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
JP5469851B2 (ja) 2007-11-27 2014-04-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5248995B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8017429B2 (en) 2008-02-19 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
SG159476A1 (en) * 2008-08-28 2010-03-30 Semiconductor Energy Lab Method for manufacturing semiconductor layer and semiconductor device
EP2161760B1 (en) * 2008-09-05 2017-04-12 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device
JP5611571B2 (ja) * 2008-11-27 2014-10-22 株式会社半導体エネルギー研究所 半導体基板の作製方法及び半導体装置の作製方法
TW201034207A (en) * 2009-01-29 2010-09-16 First Solar Inc Photovoltaic device with improved crystal orientation
US7893349B2 (en) * 2009-02-19 2011-02-22 Suncore, Inc. Photovoltaic multi-junction wavelength compensation system and method
JP2010283339A (ja) * 2009-05-02 2010-12-16 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
TWI504002B (zh) * 2009-06-05 2015-10-11 Semiconductor Energy Lab 光電轉換裝置
JP5706670B2 (ja) 2009-11-24 2015-04-22 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US8324084B2 (en) 2010-03-31 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
KR101705937B1 (ko) * 2011-01-25 2017-02-10 에베 그룹 에. 탈너 게엠베하 웨이퍼들의 영구적 결합을 위한 방법
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
US9640676B2 (en) * 2012-06-29 2017-05-02 Sunpower Corporation Methods and structures for improving the structural integrity of solar cells
JP6082294B2 (ja) * 2013-03-26 2017-02-15 ローム株式会社 有機薄膜太陽電池およびその製造方法、および電子機器
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
CN107227451B (zh) * 2017-06-26 2019-04-19 广东振华科技股份有限公司 一种贵金属防氧化膜的真空镀膜方法及贵金属镀膜制品

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Publication number Publication date
US20080245406A1 (en) 2008-10-09
JP5070112B2 (ja) 2012-11-07
JP2008277805A (ja) 2008-11-13
WO2008126706A1 (en) 2008-10-23
CN101652867A (zh) 2010-02-17
TW200849617A (en) 2008-12-16
EP2135295A1 (en) 2009-12-23
US8828789B2 (en) 2014-09-09
KR101503675B1 (ko) 2015-03-18
EP2135295A4 (en) 2014-05-21
US20110124151A1 (en) 2011-05-26
KR20100016263A (ko) 2010-02-12
TWI485864B (zh) 2015-05-21

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