CN101546724B - 静电卡盘及其制造方法 - Google Patents

静电卡盘及其制造方法 Download PDF

Info

Publication number
CN101546724B
CN101546724B CN2009101270543A CN200910127054A CN101546724B CN 101546724 B CN101546724 B CN 101546724B CN 2009101270543 A CN2009101270543 A CN 2009101270543A CN 200910127054 A CN200910127054 A CN 200910127054A CN 101546724 B CN101546724 B CN 101546724B
Authority
CN
China
Prior art keywords
electrostatic chuck
layer
sprayed
metal layer
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009101270543A
Other languages
English (en)
Chinese (zh)
Other versions
CN101546724A (zh
Inventor
肥田刚
山本高志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101546724A publication Critical patent/CN101546724A/zh
Application granted granted Critical
Publication of CN101546724B publication Critical patent/CN101546724B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49982—Coating
    • Y10T29/49986—Subsequent to metal working

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Drying Of Semiconductors (AREA)
CN2009101270543A 2008-03-28 2009-03-23 静电卡盘及其制造方法 Active CN101546724B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-085417 2008-03-28
JP2008085417A JP5201527B2 (ja) 2008-03-28 2008-03-28 静電チャック、及びその製造方法
JP2008085417 2008-03-28

Publications (2)

Publication Number Publication Date
CN101546724A CN101546724A (zh) 2009-09-30
CN101546724B true CN101546724B (zh) 2011-08-03

Family

ID=41115938

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009101270543A Active CN101546724B (zh) 2008-03-28 2009-03-23 静电卡盘及其制造方法

Country Status (4)

Country Link
US (2) US8517392B2 (https=)
JP (1) JP5201527B2 (https=)
CN (1) CN101546724B (https=)
TW (1) TWI442501B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP5876992B2 (ja) * 2011-04-12 2016-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5982206B2 (ja) * 2012-07-17 2016-08-31 東京エレクトロン株式会社 下部電極、及びプラズマ処理装置
KR101372805B1 (ko) * 2012-11-30 2014-03-19 로체 시스템즈(주) 웨이퍼 식각 시스템 및 이를 이용한 웨이퍼 식각 공정
CN104241181B (zh) * 2013-06-08 2018-05-29 中微半导体设备(上海)有限公司 静电吸盘的制造方法，静电吸盘及等离子体处理装置
KR101385950B1 (ko) * 2013-09-16 2014-04-16 주식회사 펨빅스 정전척 및 정전척 제조 방법
CH708654A2 (fr) * 2013-10-01 2015-04-15 Rado Montres Sa Procédé de fabrication d'un élément céramique incrusté d'une pièce d'horlogerie et pièces d'horlogerie incluant de tels éléments.
JP6277015B2 (ja) * 2014-02-28 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2015153756A1 (en) 2014-04-01 2015-10-08 Entegris, Inc. Heated electrostatic chuck
TWI613753B (zh) 2015-02-16 2018-02-01 麥豐密封科技股份有限公司 靜電吸附承盤側壁之改良密封件
JP6937753B2 (ja) * 2015-12-07 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 融合されたカバーリング
CN106935529B (zh) * 2015-12-31 2020-03-24 中微半导体设备(上海)股份有限公司 一种基片支撑台及其制造方法
JP6971183B2 (ja) * 2018-03-23 2021-11-24 新光電気工業株式会社 基板固定装置
KR102463946B1 (ko) * 2018-05-28 2022-11-04 니뽄 도쿠슈 도교 가부시키가이샤 유지 장치, 및, 유지 장치의 제조 방법
JP6901547B2 (ja) * 2018-09-28 2021-07-14 日本特殊陶業株式会社 半導体製造用部品
JP7134826B2 (ja) * 2018-10-11 2022-09-12 東京エレクトロン株式会社 静電チャックの生産方法
KR102502299B1 (ko) * 2019-09-06 2023-02-23 토토 가부시키가이샤 정전 척
JP7438070B2 (ja) * 2020-09-11 2024-02-26 新光電気工業株式会社 静電チャック、基板固定装置及び基板固定装置の製造方法
JP7701149B2 (ja) * 2020-12-24 2025-07-01 新光電気工業株式会社 静電チャックの製造方法
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
US11410869B1 (en) * 2021-02-22 2022-08-09 Applied Materials, Inc. Electrostatic chuck with differentiated ceramics
JP7248182B1 (ja) 2022-08-30 2023-03-29 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP2025011893A (ja) * 2023-07-12 2025-01-24 新光電気工業株式会社 静電チャック、基板固定装置
CN116959948B (zh) * 2023-09-21 2023-12-08 江苏鲁汶仪器股份有限公司 一种静电吸盘以及等离子体刻蚀装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2984164B2 (ja) * 1993-03-26 1999-11-29 日本碍子株式会社 半導体製造用サセプター
US5986874A (en) * 1997-06-03 1999-11-16 Watkins-Johnson Company Electrostatic support assembly having an integral ion focus ring
JP3974226B2 (ja) 1997-07-15 2007-09-12 プレス工業株式会社 溶接部の強化方法及び溶接部の強化装置
JP4493251B2 (ja) * 2001-12-04 2010-06-30 Ｔｏｔｏ株式会社 静電チャックモジュールおよび基板処理装置
JP2003264223A (ja) * 2002-03-08 2003-09-19 Rasa Ind Ltd 静電チャック部品および静電チャック装置およびその製造方法
JP4066329B2 (ja) * 2002-09-05 2008-03-26 太平洋セメント株式会社 静電チャックの製造方法およびそれを用いて得られた静電チャック
JP2003321760A (ja) * 2003-05-19 2003-11-14 Tocalo Co Ltd プラズマ処理容器内部材およびその製造方法
JP5019811B2 (ja) 2006-07-20 2012-09-05 東京エレクトロン株式会社 静電吸着電極の補修方法
JP5160112B2 (ja) * 2007-03-19 2013-03-13 東京エレクトロン株式会社 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置

Also Published As

Publication number Publication date
JP5201527B2 (ja) 2013-06-05
TW200949980A (en) 2009-12-01
US20090243236A1 (en) 2009-10-01
TWI442501B (zh) 2014-06-21
JP2009235536A (ja) 2009-10-15
US8776356B2 (en) 2014-07-15
CN101546724A (zh) 2009-09-30
US20130306593A1 (en) 2013-11-21
US8517392B2 (en) 2013-08-27

Similar Documents

Publication Publication Date Title
CN101546724B (zh) 静电卡盘及其制造方法
KR101163825B1 (ko) 정전척 및 그 제조 방법
US10079167B2 (en) Electrostatic chucking device
US9984912B2 (en) Locally heated multi-zone substrate support
JP3567855B2 (ja) 半導体製造装置用ウェハ保持体
JP5174582B2 (ja) 接合構造体
CN101207945B (zh) 加热装置
US20110229837A1 (en) Wafer Heating Apparatus, Electrostatic Chuck, and Method for Manufacturing Wafer Heating Apparatus
JPH09172055A (ja) 静電チャック及びウエハの吸着方法
CN111480222A (zh) 静电卡盘装置及静电卡盘装置的制造方法
TW201330168A (zh) 靜電吸持裝置
CN101512749B (zh) 静电吸盘的馈电结构及其制造方法以及静电吸盘的馈电结构的再生方法
TWI437617B (zh) 靜電卡盤及其基板加工裝置
JP3763519B2 (ja) 静電吸着装置
JP2008305968A (ja) ウェハ保持体の電極接続構造
KR101585082B1 (ko) 히팅 유닛 및 그 제조방법 및 이를 이용한 온도 제어가 가능한 정전척
JP6597437B2 (ja) 静電チャック装置
TW202410287A (zh) 靜電卡盤和半導體製程設備
KR20230150707A (ko) 정전 척 장치
KR102230222B1 (ko) 정전척의 접착층 충진 방법
JP4811790B2 (ja) 静電チャック
JP4879771B2 (ja) 静電チャック
CN116313860B (zh) 键合头以及包括该键合头的键合装置
JP2022094466A (ja) 静電チャック装置
JP7742945B1 (ja) サセプタ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant